Abstract: A glass block is formed by stacking, fixing, and integrating a plurality of thin glass plates having a predetermined thickness. An annular glass block is formed by coring the glass block. Surfaces of an inside circumference and an outside circumference of the annular glass block are ground. The annular glass block of which the surfaces of the inside circumference and the outside circumference are ground are separated into individual annular glass substrates, and separated annular glass substrates are cleaned. Then, edge portions of the inside circumference and the outside circumference of a cleaned annular glass substrate are chamfered.

Abstract: A plurality of openings are formed in a resin insulation layer on a top surface side of a wiring laminate portion, and a plurality of openings are formed in a resin insulation layer on a bottom surface side thereof. A plurality of connection terminals are disposed to correspond to the openings. Peripheral portions of terminal outer surfaces of the connection terminals are covered by the resin insulation layer on the top surface side, and peripheral portions of terminal outer surfaces of the connection terminals are covered by the resin insulation layer on the bottom surface side. Each of the second-main-surface-side connection terminals has a concave portion at the center of the terminal outer surface, and the deepest portion of the concave portion is located on the interior side in relation to the peripheral portion of the terminal outer surface.

Abstract: A plurality of openings are formed in a resin insulation layer on a bottom surface side of a wiring laminate portion which constitutes a multilayer wiring substrate. A plurality of motherboard connection terminals are disposed to correspond to the openings. The motherboard connection terminals are primarily comprised of a copper layer, and peripheral portions of terminal outer surfaces thereof are covered by the outermost resin insulation layer. A dissimilar metal layer made of at least one metal which is lower in etching rate than copper is formed between an inner main surface of the outermost resin insulation layer and peripheral portions of the terminal outer surfaces.

Abstract: A multilayered wiring substrate, comprising: a plurality of first main surface side connecting terminals arranged in a first main surface of a stack structure; and a plurality of second main surface side connecting terminals being arranged in a second main surface of the stack structure; wherein a plurality of conductor layers are alternately formed in a plurality of stacked resin insulation layers and are operably connected to each other through via conductors tapered such that diameters thereof are widened toward the first or the second main surface, wherein a plurality of openings are formed in an exposed outermost resin insulation layer in the second main surface, and terminal outer surfaces of the second main surface side connecting terminals arranged to match with the plurality of the openings are positioned inwardly from an outer main surface of the exposed outermost resin insulation layer, and edges of terminal inner surfaces are rounded.

Abstract: In a build-up step, a plurality of resin insulation layers and a plurality of conductive layers are alternately laminated in multilayer arrangement on a metal foil separably laminated on a side of a base material, thereby forming a wiring laminate portion. In a drilling step, a plurality of openings are formed in an outermost resin insulation layer through laser drilling so as to expose connection terminals. Subsequently, in a desmear step, smears from inside the openings are removed. In a base-material removing step performed after the build-up step, the base material is removed and the metal foil is exposed.

Abstract: A multilayer wiring substrate has a multilayer wiring laminate portion in which a plurality of resin insulation layers made primarily of the same resin insulation material, and a plurality of conductive layers are laminated alternately. A plurality of first-main-surface-side connection terminals are disposed on one side of the laminate structure where a first main surface thereof is present, and a plurality of second-main-surface-side connection terminals being disposed on an other side of the laminate structure where a second main surface thereof is present. The plurality of conductive layers are formed in the plurality of resin insulation layers and interconnected by means of via conductors whose diameters increase toward the first main surface or the second main surface. The plurality of first-main-surface-side connection terminals comprising at least two types of terminals for connection of different articles-to-be-connected.

Abstract: A chamfering apparatus is used to chamfer a peripheral edge of a glass substrate. The chamfering apparatus includes a grindstone having a cylindrical hollow end portion; a grindstone driving unit that rotates the grindstone around an axis of the cylindrical hollow end portion; a substrate rotation-driving unit that rotates the glass substrate around either one of an axis of the outer periphery and an axis of the center circular hole; and a pressing unit that presses the grindstone to the glass substrate such that an annular end surface of the grindstone contacts with an edge of either one of the outer periphery and the inner periphery of the glass substrate while the cylindrical hollow end portion of the grindstone faces with one of the outer periphery and the inner periphery of the glass substrate.

Abstract: A method of manufacturing a disk substrate includes a disk substrate forming step of forming a disk substrate; and an outer chamfering step of chamfering an outer edge of the disk substrate. The outer chamfering step includes chamfering the outer edge by bringing an end surface of a cylindrical-shaped outer chamfering grindstone having a hollow portion on its end into contact with the outer edge such that the hollow portion faces the outer edge while rotating each of the outer chamfering grindstone and the disk substrate.

Abstract: A chamfering apparatus is used to chamfer a peripheral edge of a glass substrate. The chamfering apparatus includes a grindstone having a cylindrical hollow end portion; a grindstone driving unit that rotates the grindstone around an axis of the cylindrical hollow end portion; a substrate rotation-driving unit that rotates the glass substrate around either one of an axis of the outer periphery and an axis of the center circular hole; and a pressing unit that presses the grindstone to the glass substrate such that an annular end surface of the grindstone contacts with an edge of either one of the outer periphery and the inner periphery of the glass substrate while the cylindrical hollow end portion of the grindstone faces with one of the outer periphery and the inner periphery of the glass substrate.

Abstract: A remover contains an alkaline component, a bivalent zinc ion, a ferric ion, a chelating agent, and a nitrate ion. By using this remover, an anodized film can be selectively removed from an aluminum or aluminum-alloy member.

Abstract: A remover contains an alkaline component, a bivalent zinc ion, a ferric ion, a chelating agent, and a nitrate ion. By using this remover, an anodized film can be selectively removed from an aluminum or aluminum-alloy member.

Abstract: A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating/removal process for removing a silicon wafer surface part by heating at 150-300° C. for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer.

Abstract: In the device for producing a ring core, a drop-through blanking die (46) constituting a rotor core production line (30) is used to mold a ring core by laminating a plurality of split core plates (12, 16) while arranging them in a ring shape. The drop-through blanking die (46) consists of a rotary mechanism (55) for rotating the split core plates (12, 16) thus laminated through a predetermined angle, an inner guide member (62) being arranged on the inner circumferential side of the split core plates (12, 16) laminated in a ring shape, and an outer guide member (58) being arranged on the outer circumferential side of the split core plates (12, 16). While the split core plates (12, 16) are supported by any one of the inner guide member (62) and the outer guide member (58), a pressure is imparted to the split core plates (12, 16) by the other.

Abstract: Included are a reducing-heterogeneous-layer removing process of removing at least a part of a reducing heterogeneous layer in a surface of a plate glass manufactured through a float process, and a heating drawing process of heating and softening the plate glass from which at least the part of the reducing heterogeneous layer is removed in a heating furnace to draw the plate glass to a desirable thickness to form a glass strip. Thus provided is a method of manufacturing a glass strip capable of manufacturing a thin, rod-like glass strip with an excellent flatness even when a plate glass to be subjected to the heating drawing is a plate glass manufactured through the float process.

Abstract: A method of manufacturing a disk substrate includes a disk substrate forming step of forming a disk substrate; and an outer chamfering step of chamfering an outer edge of the disk substrate. The outer chamfering step includes chamfering the outer edge by bringing an end surface of a cylindrical-shaped outer chamfering grindstone having a hollow portion on its end into contact with the outer edge such that the hollow portion faces the outer edge while rotating each of the outer chamfering grindstone and the disk substrate.

Abstract: A chamfering apparatus is used to chamfer a peripheral edge of a glass substrate. The chamfering apparatus includes a grindstone having a cylindrical hollow end portion; a grindstone driving unit that rotates the grindstone around an axis of the cylindrical hollow end portion; a substrate rotation-driving unit that rotates the glass substrate around either one of an axis of the outer periphery and an axis of the center circular hole; and a pressing unit that presses the grindstone to the glass substrate such that an annular end surface of the grindstone contacts with an edge of either one of the outer periphery and the inner periphery of the glass substrate while the cylindrical hollow end portion of the grindstone faces with one of the outer periphery and the inner periphery of the glass substrate.

Abstract: A glass block is formed by stacking, fixing, and integrating a plurality of thin glass plates having a predetermined thickness. An annular glass block is formed by coring the glass block. Surfaces of an inside circumference and an outside circumference of the annular glass block are ground. The annular glass block of which the surfaces of the inside circumference and the outside circumference are ground are separated into individual annular glass substrates, and separated annular glass substrates are cleaned. Then, edge portions of the inside circumference and the outside circumference of a cleaned annular glass substrate are chamfered.

Abstract: The polishing slurry contains monoclinic zirconium oxide particles having a crystallite size of 10 to 1,000 nm and an average particle diameter of 30 to 2,000 nm in an amount of 1 to 20 weight %, a carboxylic acid having three or more carboxyl groups in the molecule, and a quaternary alkylammonium hydroxide, and has a pH of 9 to 12. The method of reclaiming wafers comprises a step of polishing used test wafers by using the polishing slurry above and removing the films formed on the wafers and the degenerated layers formed on the wafer surfaces, a step of mirror-polishing at least one side of the wafers, and a step of cleaning the wafers.

Abstract: A process for producing cumene by subjecting cumyl alcohol to hydrogenolysis or hydrogenation subsequent to dehydration, which comprises using a palladium-based catalyst as a catalyst for the hydrogenolysis or the hydrogenation, and using hydrogen having a carbon monoxide concentration of 0.1 to 10% by volume as hydrogen.

Abstract: Anodic oxidation coatings are selectively removed from anodic oxidation-treated aluminum or aluminum alloy members by immersion in a solution composition. By using a remover composition characterized by containing phosphoric acid and a molybdate salt, it is possible to selectively remove the anodic oxidation coatings from the aluminum or aluminum alloy members without substantially dissolving the basis metal aluminum or aluminum alloy.