Abstract: A chamfering apparatus is used to chamfer a peripheral edge of a glass substrate. The chamfering apparatus includes a grindstone having a cylindrical hollow end portion; a grindstone driving unit that rotates the grindstone around an axis of the cylindrical hollow end portion; a substrate rotation-driving unit that rotates the glass substrate around either one of an axis of the outer periphery and an axis of the center circular hole; and a pressing unit that presses the grindstone to the glass substrate such that an annular end surface of the grindstone contacts with an edge of either one of the outer periphery and the inner periphery of the glass substrate while the cylindrical hollow end portion of the grindstone faces with one of the outer periphery and the inner periphery of the glass substrate.

Abstract: A remover contains an alkaline component, a bivalent zinc ion, a ferric ion, a chelating agent, and a nitrate ion. By using this remover, an anodized film can be selectively removed from an aluminum or aluminum-alloy member.

Abstract: A remover contains an alkaline component, a bivalent zinc ion, a ferric ion, a chelating agent, and a nitrate ion. By using this remover, an anodized film can be selectively removed from an aluminum or aluminum-alloy member.

Abstract: A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating/removal process for removing a silicon wafer surface part by heating at 150-300° C. for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer.

Abstract: In the device for producing a ring core, a drop-through blanking die (46) constituting a rotor core production line (30) is used to mold a ring core by laminating a plurality of split core plates (12, 16) while arranging them in a ring shape. The drop-through blanking die (46) consists of a rotary mechanism (55) for rotating the split core plates (12, 16) thus laminated through a predetermined angle, an inner guide member (62) being arranged on the inner circumferential side of the split core plates (12, 16) laminated in a ring shape, and an outer guide member (58) being arranged on the outer circumferential side of the split core plates (12, 16). While the split core plates (12, 16) are supported by any one of the inner guide member (62) and the outer guide member (58), a pressure is imparted to the split core plates (12, 16) by the other.

Abstract: Included are a reducing-heterogeneous-layer removing process of removing at least a part of a reducing heterogeneous layer in a surface of a plate glass manufactured through a float process, and a heating drawing process of heating and softening the plate glass from which at least the part of the reducing heterogeneous layer is removed in a heating furnace to draw the plate glass to a desirable thickness to form a glass strip. Thus provided is a method of manufacturing a glass strip capable of manufacturing a thin, rod-like glass strip with an excellent flatness even when a plate glass to be subjected to the heating drawing is a plate glass manufactured through the float process.

Abstract: A method of manufacturing a disk substrate includes a disk substrate forming step of forming a disk substrate; and an outer chamfering step of chamfering an outer edge of the disk substrate. The outer chamfering step includes chamfering the outer edge by bringing an end surface of a cylindrical-shaped outer chamfering grindstone having a hollow portion on its end into contact with the outer edge such that the hollow portion faces the outer edge while rotating each of the outer chamfering grindstone and the disk substrate.

Abstract: A chamfering apparatus is used to chamfer a peripheral edge of a glass substrate. The chamfering apparatus includes a grindstone having a cylindrical hollow end portion; a grindstone driving unit that rotates the grindstone around an axis of the cylindrical hollow end portion; a substrate rotation-driving unit that rotates the glass substrate around either one of an axis of the outer periphery and an axis of the center circular hole; and a pressing unit that presses the grindstone to the glass substrate such that an annular end surface of the grindstone contacts with an edge of either one of the outer periphery and the inner periphery of the glass substrate while the cylindrical hollow end portion of the grindstone faces with one of the outer periphery and the inner periphery of the glass substrate.

Abstract: A glass block is formed by stacking, fixing, and integrating a plurality of thin glass plates having a predetermined thickness. An annular glass block is formed by coring the glass block. Surfaces of an inside circumference and an outside circumference of the annular glass block are ground. The annular glass block of which the surfaces of the inside circumference and the outside circumference are ground are separated into individual annular glass substrates, and separated annular glass substrates are cleaned. Then, edge portions of the inside circumference and the outside circumference of a cleaned annular glass substrate are chamfered.

Abstract: The polishing slurry contains monoclinic zirconium oxide particles having a crystallite size of 10 to 1,000 nm and an average particle diameter of 30 to 2,000 nm in an amount of 1 to 20 weight %, a carboxylic acid having three or more carboxyl groups in the molecule, and a quaternary alkylammonium hydroxide, and has a pH of 9 to 12. The method of reclaiming wafers comprises a step of polishing used test wafers by using the polishing slurry above and removing the films formed on the wafers and the degenerated layers formed on the wafer surfaces, a step of mirror-polishing at least one side of the wafers, and a step of cleaning the wafers.

Abstract: A process for producing cumene by subjecting cumyl alcohol to hydrogenolysis or hydrogenation subsequent to dehydration, which comprises using a palladium-based catalyst as a catalyst for the hydrogenolysis or the hydrogenation, and using hydrogen having a carbon monoxide concentration of 0.1 to 10% by volume as hydrogen.

Abstract: Anodic oxidation coatings are selectively removed from anodic oxidation-treated aluminum or aluminum alloy members by immersion in a solution composition. By using a remover composition characterized by containing phosphoric acid and a molybdate salt, it is possible to selectively remove the anodic oxidation coatings from the aluminum or aluminum alloy members without substantially dissolving the basis metal aluminum or aluminum alloy.

Abstract: A computer readable medium storing a program causing a computer to execute a function for displaying information on an image log, the function includes: generating an image log from an image which is used in processing a job, the job performed by an image processing apparatus; transferring the generated image log to a device that is connected to the image processing apparatus; generating information which includes status of at least one of the generating the image log or the transferring the image log; and displaying the generated information.

Abstract: The porous substrate, comprises: three-dimensional-network skeletal solid phase inside the substrate, and a skin layer same in quality as the skeletal solid phase formed on at least one surface of the substrate, and a production method thereof, comprising: forming a wet gel having a three-dimensional-network skeletal solid phase and a fluid phase rich in solvent that are separated from each other in a space between a pair of flat plates by sol-gel reaction, removing the solvent in the wet gel by drying, and removing at least one flat plate of the pair of flat plates.

Abstract: A remover contains an alkaline component, a bivalent zinc ion, a ferric ion, a chelating agent, and a nitrate ion. By using this remover, an anodized film can be selectively removed from an aluminum or aluminum-alloy member.

Abstract: The polishing slurry contains monoclinic zirconium oxide particles having a crystallite size of 10 to 1,000 nm and an average particle diameter of 30 to 2,000 nm in an amount of 1 to 20 weight %, a carboxylic acid having three or more carboxyl groups in the molecule, and a quaternary alkylammonium hydroxide, and has a pH of 9 to 12. The method of reclaiming wafers comprises a step of polishing used test wafers by using the polishing slurry above and removing the films formed on the wafers and the degenerated layers formed on the wafer surfaces, a step of mirror-polishing at least one side of the wafers, and a step of cleaning the wafers.

Abstract: A process for producing cumene by subjecting cumyl alcohol to hydrogenolysis or hydrogenation subsequent to dehydration, which comprises using a palladium-based catalyst as a catalyst for the hydrogenolysis or the hydrogenation, and using hydrogen having a carbon monoxide concentration of 0.1 to 10% by volume as hydrogen.

Abstract: A body having a thin region in substantially a half lower portion and a head joined to the body by a neck. When the element is blanked out of a metal sheet, an excess amount of metal produced by pressing the substantially half lower portion of the body flows from the body into the metal sheet positioned on an opposite side of the neck and a metal flow is produced into laterally spaced ends of the neck. The head has relatively thick laterally spaced ends and the head neck and the body have respective thicknesses equal to or smaller than the thickness of the head. The laterally spaced side end regions of the body have a thickness smaller than a thickness of the lower region of the neck in the substantially half upper portion of the body.

Abstract: A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating/removal process for removing a silicon wafer surface part by heating at 150-300° C. for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer.

Abstract: A method of specifying a Cu-contamination-causative step or steps in a Si wafer reclamation process including plural steps in combination, comprising: using p-type Si wafers, or p-type Si wafers and n-type Si wafers as monitor wafers, and performing a measuring operation for measuring the electrical resistance of the monitor wafers at least once before and after a single step or a series of successive steps during the Si wafer reclamation process. The present invention is capable of nondestructively, simply, and accurately detecting Cu that can contaminate Si wafers during a Si wafer reclamation process and is capable of specifying a Cu-contamination-causative process.