Abstract: A semiconductor device includes: a semiconductor base; a hetero semiconductor region which is in contact with the semiconductor base and which has a band gap different from that of the semiconductor base; a first electrode connected to the hetero semiconductor region; and a second electrode forming an ohmic contact to the semiconductor base. The hetero semiconductor region includes a laminated hetero semiconductor region formed by laminating a plurality of semiconductor layers in which crystal alignment is discontinuous at a boundary between at least two layers.

Abstract: A secondary battery includes: a positive electrode; a negative electrode; a porous electron-insulating layer adhered to a surface of at least one selected from the group consisting of the positive electrode and the negative electrode; and an electrolyte. The porous electron-insulating layer comprises a particulate filler and a resin binder, and the particulate filler comprises an indefinite-shape particle comprising a plurality of primary particles that are joined to one another. A neck is preferably formed between the primary particles. Since the porous electron-insulating layer has high porosity, it is possible to obtain a secondary battery that exhibits excellent low-temperature characteristics, which are particularly important in actual use, and that is capable of discharging at a large current.

Abstract: A three-dimensional ultrasonic image with which the positional relationship between tissues can be surely grasped is generated. Accordingly, an ultrasonic imaging apparatus and a projection image generating method according to the present invention acquire first three-dimensional image data and second three-dimensional image data, generate a first projection image on the basis of at least a part of the first three-dimensional image data and the second three-dimensional image data, and generate a second projection image on the basis of at least a part of the second three-dimensional image data and the first three-dimensional imaged data.

Abstract: A non-aqueous electrolyte secondary battery including: a positive electrode; a negative electrode; a separator interposed between the positive electrode and the negative electrode; a non-aqueous electrolyte; and a porous insulating film adhered to a surface of at least one selected from the group consisting of the positive electrode and the negative electrode, the porous insulating film including an inorganic oxide filler and a film binder, wherein the ratio R of actual volume to apparent volume of the separator is not less than 0.4 and not greater than 0.7, and wherein the ratio R and a porosity P of the porous insulating film satisfy the relational formula: ?0.10?R?P?0.30.

Abstract: An aspect of the present invention provides a semiconductor device that includes a first conductivity type semiconductor body, a source region in contact with the semiconductor body, whose bandgap is different from that of the semiconductor body, and which formed heterojunction with the semiconductor body, a gate insulating film in contact with a portion of junction between the source region and the semiconductor body, a gate electrode in contact with the gate insulating film, a source electrode, a low resistance region in contact with the source electrode and the source region, and connected ohmically with the source electrode, and a drain electrode connected ohmically with the semiconductor body.

Abstract: A plotting device (1) includes: plotting means (13) for plotting a desired pattern onto a label plane by applying a laser beam (LB) to the label plane (120) of a recording medium (100); drive means (15) for driving the plotting means along the label plane; voltage application means (17) for applying a first voltage and a second voltage for driving the drive means to the drive means; and control means (31) for controlling the voltage application means so that the first voltage and the second voltage have the same polarity and amplitude when the plotting means is positioned at the initial position corresponding to the position where plotting of the desired pattern onto the label plane is to be started.

Abstract: An invention disclosed includes a layer number obtaining section (222) for determining which information storage layer (L1) has been accessed and a layer type identifying section (223) for identifying a type of the information storage layer (L1) determined by the layer number obtaining section (222). With the configuration, even in a case where an information recording and reproducing apparatus accesses an information storage layer different from an intended information storage layer by false operation or the like, it is still possible to dissolve mismatching between a recording or reproduction control scheme being set up and a recording or reproduction control scheme suitable for the information storage layer thus accessed.

Abstract: A lithium ion secondary battery having an electrode group that includes: a winding core, a positive electrode containing a positive electrode core member and a positive electrode active material layer, a negative electrode comprising a negative electrode core member and a negative electrode active material layer, and a porous film including a filler and a binder formed on at least one of the positive and negative electrodes which are wound around the winding core. The positive electrode and/or the negative electrode have/has, on the initial winding side, a region where the active material layer is carried on only one side of the core member and a region where the active material layer is carried on neither side of the core member, at a position closer to the initial winding position than the region where the active material layer is carried on only one side of the core member.

Abstract: Methods of manufacturing a semiconductor device including a semiconductor substrate and a hetero semiconductor region including a semiconductor material having a band gap different from that of the semiconductor substrate and contacting a portion of a first surface of the semiconductor substrate are taught herein, as are the resulting devices. The method comprises depositing a first insulating film on exposed portions of the first surface of the semiconductor substrate and on exposed surfaces of the hetero semiconductor material and forming a second insulating film between the first insulating film and facing surfaces of the semiconductor substrate and the hetero semiconductor region by performing a thermal treatment in an oxidizing atmosphere.

Abstract: The amount of a paint for forming a porous heat-resistant layer supplied to the outer surface of a gravure roll is adjusted by removing the paint with a blade that is disposed so as to contact the outer surface. A resin blade is used, and the position at which the resin blade contacts the outer surface of the gravure roll is changed as the resin blade wears away. This prevents the amount of the paint for forming the porous heat-resistant layer removed from the outer surface of the gravure roll from changing as the resin blade wears away, so that the excess amount of the paint carried on the outer surface of the gravure roll is removed with good accuracy. An almost constant amount of the paint is thus transferred to an electrode surface from the outer surface of the gravure roll, and a porous heat-resistant layer with an almost uniform thickness is stably formed on an industrial scale.

Abstract: An optical information recording medium (1) includes, on a substrate (50), a ROM layer (20), a RE layer (40), an intermediate layer (30) separating the ROM layer (20) and the RE layer (40), and a cover layer (10) provided in a position farthest from the substrate (50). The RE layer (40) is an information recording layer provided in a position farthest from the light transmitting layer and also is a recording layer of disc type identification information and an individual identification number recorded in a format allowing easier determination as compared to an information recording format used in the layer allowing only readout of information by use of light irradiation. Therefore, it becomes easy to check a disc type in a recording/reproducing device and one recording/reproducing device can be shared with other types of optical disks. Further, disk production becomes easy.

Abstract: An aspect of the present invention provides a semiconductor device that includes a first conductivity type semiconductor body, a source region in contact with the semiconductor body, whose bandgap is different from that of the semiconductor body, and which formed heterojunction with the semiconductor body, a gate insulating film in contact with a portion of junction between the source region and the semiconductor body, a gate electrode in contact with the gate insulating film, a source electrode, a low resistance region in contact with the source electrode and the source region, and connected ohmically with the source electrode, and a drain electrode connected ohmically with the semiconductor body.

Abstract: A plurality of gravure rolls are rotated while being allowed to abut against a surface of a moving electrode hoop, thereby applying a coating fluid serving as a precursor of porous layers onto a plurality of linear mixture layers. In this way, a plurality of linear porous layers are formed on the associated linear mixture layers formed on the surface of the electrode hoop. In this case, the location at which each gravure roll abuts against the surface of the electrode hoop is controlled according to variations in the lateral location of associated one of the mixture layers independently of the other gravure rolls.

Abstract: The present invention relates to an optical fiber cable incorporating a multi-core fiber provided with a plurality of cores and a cladding region. The optical fiber cable has a jacket covering the multi-core fiber. The multi-core fiber is arranged so that a hold wrap holds the cores in a state in which they are provided with a bend of not more than a fixed radius of curvature, in order to reduce crosstalk between the cores.

Abstract: An ultrasound diagnostic apparatus includes an ultrasound probe which transmits/receives an ultrasound wave with respect to a subject to be diagnosed, an ultrasound wave transmit section which transmits an ultrasound wave for driving the ultrasound probe, a pressing section which applies an external pressure to the subject, a displacement measuring section which obtains two tomographic image data different in time series from a reflected echo signal received from the ultrasound probe and measures a displacement of each part in the subject based on the two tomographic image data, an image generating section which generates an elastic image from elasticity information based on the displacement of each part measured by the displacement measuring section, and a display section which displays the generated elastic image. Further, a pressing decision section decides whether or not the pressing operation by the pressing section is proper.

Abstract: The present invention provides an optical information recording medium (2) capable of shortening a time from acquiring identification information to starting a program etc. recorded on an ROM layer. The optical information recording medium (2) includes two or more information recording layers, information of each of the two or more information recording layers is readable by emitting reproducing light thereto, at least one of said two or more information recording layers is an RE/R layer (4), at least another one of said two or more information recording layers is an ROM layer (5), and the RE/R layer (4) includes an identification information recording region (41), and an interlayer-movement Flag is recorded on the identification information recording region (41).

Abstract: A non-aqueous electrolyte secondary battery including: a positive electrode; a negative electrode; a separator interposed between the positive electrode and the negative electrode; a non-aqueous electrolyte; and a porous insulating film adhered to a surface of at least one selected from the group consisting of the positive electrode and the negative electrode, the porous insulating film including an inorganic oxide filler and a film binder, wherein the ratio R of actual volume to apparent volume of the separator is not less than 0.4 and not greater than 0.7, and wherein the ratio R and a porosity P of the porous insulating film satisfy the relational formula: ?0.10?R?P?0.30.

Abstract: An optical fiber producing method and apparatus are provided in which sufficient pulling tension is applied to an optical fiber to enhance the twisting efficiency without affecting winding tension of a winding bobbin, whereby the PMD of the optical fiber can be reduced.

Abstract: A communication test circuit for allowing a tolerance test to be carried out in a general testing environment. The communication test circuit includes an adder and a second clock generation block. When an offset is input to the adder, the adder adds the offset to a phase adjustment signal for adjusting the phase of a clock signal for data detection and outputs the result to the second clock generation block. The second clock generation block outputs a second clock signal adjusted in accordance with the phase adjustment signal to which the offset has been added. Accordingly, a clock signal shifted in accordance with the offset from a natural clock signal along the time axis is generated at a test.

Abstract: A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability.