Abstract: A communication test circuit for allowing a tolerance test to be carried out in a general testing environment. The communication test circuit includes an adder and a second clock generation block. When an offset is input to the adder, the adder adds the offset to a phase adjustment signal for adjusting the phase of a clock signal for data detection and outputs the result to the second clock generation block. The second clock generation block outputs a second clock signal adjusted in accordance with the phase adjustment signal to which the offset has been added. Accordingly, a clock signal shifted in accordance with the offset from a natural clock signal along the time axis is generated at a test.

Abstract: A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability.

Abstract: The present invention relates to a multi-core fiber having a structure for effectively suppressing crosstalk increase between cores caused by bending within an allowable range. The multi-core fiber comprises a plurality of types of cores respectively extending along an optical axis and a cladding region, and the effective refractive index of each core is set so that, in all pairs of cores of different types, a relative refractive index difference between an effective refractive index of a core of a certain type and an effective refractive index of a core of another type satisfies a condition regulated according to a core spacing between cores and a bending radius.

Abstract: An ultrasound diagnostic apparatus including: a tomogram forming means forming a tomogram of a diagnosis portion of an examinee by transmitting/receiving an ultrasound wave to/from the examinee via an ultrasound probe; color Doppler image forming means forming a color Doppler image based on a Doppler signal obtained from the diagnosis portion; image processing means performing image processing on the tomogram and the color Doppler image; and display means displaying images obtained by the image processing means, the tomogram and the color Doppler image being color displayed on the display means, wherein the image processing means causes the color Doppler image to be displayed transparently.

Abstract: There is provided a film measuring device capable of accurately and easily measuring the thickness of a microporous film formed on a battery electrode plate over the entire area of the film. A color CCD sensor 8 shoots the microporous film. A video board 11 converts a color tone of a color image signal obtained by the image pickup into gradation data of respective color components of RGB. After the data conversion, an image processing board 12 extracts line images of the respective color components. A calculator 14 obtains the thickness of the microporous film by referring to pre-measured film thickness reference values corresponding to the gradation data of the green or blue color component, which are stored in a table storage 13 as reference thickness table data, using the gradation data of the line image of the green color component or the blue color component as lookup data.

Abstract: The present invention is to provide a velocity measuring method and a velocity measuring device for carrying out the method.

Abstract: A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability.

Abstract: The present invention realizes a Doppler velocity detecting technique capable of performing velocity detection and analysis with a suppressed error while excellently distinguishing a clutter signal, and provides an ultrasonographic device using the technique.

Abstract: An optical line monitoring apparatus and optical line monitoring system which can measure a reflectance distribution in an optical line with a high spatial resolution in a short time are provided. An optical line monitoring apparatus 14A provided in a station 10A comprises an OCDR measurement section 15 for carrying out OCDR measurement, an OTDR measurement section 16 for carrying out OTDR measurement, an optical switch 13 for selectively connecting one of the OCDR measurement section 15 and OTDR measurement section 16 to the optical coupler 12, a control section 17, and a storage device 18. The control section 17 performs a predetermined arithmetic operation according to an OCDR measurement result acquired by causing the OCDR measurement section 15 to carry out the OCDR measurement and an OTDR measurement result acquired by causing the OTDR measurement section 16 to carry out the OTDR measurement.

Abstract: A lithium ion secondary battery includes a positive electrode capable of absorbing and desorbing lithium ion, a negative electrode capable of absorbing and desorbing lithium ion, a porous film interposed between the positive electrode and the negative electrode, and a non-aqueous electrolyte: the porous film being adhered to a surface of at least one of the positive electrode and the negative electrode; the porous film including a filler and a resin binder; the resin binder content in the porous film being 1.5 to 8 parts by weight per 100 parts by weight of the filler; and the resin binder including an acrylonitrile unit, an acrylate unit, or a methacrylate unit.

Abstract: A camera device comprises a movable optical system, a driving unit which drives the optical system, and a control unit which makes the driving unit start driving of the optical system to a predetermined state by an initialization of the optical system by using an interrupt processing which is executed by setting an interrupt processing routine before the operating system is started, when the camera device is started up in a state in which an operation mode for photographing is set.

Abstract: The present invention relates to an apparatus and method of producing coated optical fiber in which polarization mode dispersion is sufficiently reduced by providing a sufficient amount of twist thereto. An upstream twisting inhibiting roller (11), a twist non-inhibiting roller (12), a twist provider (13) and a downstream twist inhibiting roller (14) are provided in this order along the path line of a coated optical fiber (1). The twist provider (13) provides the twist to the coated optical fiber (1). The upstream twist inhibiting roller (11) and the downstream twist inhibiting roller (14) respectively inhibit a rotation of the coated optical fiber (1) around the axis of the coated optical fiber (1).

Abstract: An ultrasound probe includes an ultrasound wave transmit/receive surface coming into contact with a contact surface of a subject, an ultrasound wave transmit/receive section which transmits an ultrasound wave to the subject via the ultrasound wave transmit/receive surface and the contact surface and receives an ultrasound wave reflected in the subject, and a pressing mechanism for performing a pressing operation for applying a pressure to the contact surface perpendicularly to the ultrasound wave transmit/receive surface via the ultrasound wave transmit/receive surface.

Abstract: A semiconductor device with superior long-term reliability is disclosed that alleviates current concentration into a switch structure arranged at an outermost portion. The semiconductor device comprises hetero semiconductor regions formed of polycrystalline silicon having a band gap width different from that of a drift region and hetero-adjoined with the drift region, a gate insulation film, a gate electrode adjoined to the gate insulation film, a source electrode connected to a source contact portion of the hetero semiconductor regions and an outermost switch structure and a repeating portion switch structure with a drain electrode connected to a substrate region. In a conduction state, the outermost switch structure comprises a mechanism in which the current flowing at the outermost switch structure becomes smaller than the current flowing at the repeating portion switch structure.

Abstract: A hetero semiconductor corner region, which is a current-concentration relief region that keeps a reverse bias current from concentrating on the convex corner, is arranged in a hetero semiconductor region. Thereby, a current concentration on the convex corner can be prevented. As a result, an interrupting performance can be improved at the time of interruption, and at the same time, the generation of the hot spot where in a specific portion is prevented at the time of conduction to suppress deterioration in a specific portion, thereby ensuring a long-term reliability.

Abstract: A method for forming an electrode for a battery includes the step of forming a porous layer on the surface of an electrode hoop formed at its surface with a mixture layer containing an active material. The porous layer is formed in the following manner: A gravure roll is rotated oppositely to the direction of movement of the electrode hoop while being allowed to abut against the surface of the moving electrode hoop, thereby applying a coating fluid serving as a precursor of the porous layer to the surface of the electrode hoop. A plurality of grooves formed in the circumferential surface of the gravure roll extend in parallel in oblique directions against the rotation direction of the gravure roll from the central line of the circumferential surface to the outer edges of the circumferential surface so as to be arranged in a symmetrical manner relative to the central line.

Abstract: A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability.

Abstract: A semiconductor device is provided with: a semiconductor substrate of a predetermined electroconduction type; a hetero semiconductor region contacted with a first main surface of the semiconductor substrate and comprising a semiconductor material having a bandgap different from that of the semiconductor substrate; a gate electrode formed through a gate insulator layer at a position adjacent to a junction region between the hetero semiconductor region and the semiconductor substrate; a source electrode connected to the hetero semiconductor region; and a drain electrode connected to the semiconductor substrate; wherein the hetero semiconductor region includes a contact portion contacted with the source electrode, at least a partial region of the contact portion is of the same electroconduction type as the electroconduction type of the semiconductor substrate, and the partial region has an impurity concentration higher than an impurity concentration of at least that partial region of a gate-electrode facing port

Abstract: The present invention relates to an optical fiber, wherein PMD will not significantly increase even when an external factor, such as a lateral pressure, a bending and the like, is applied to the optical fiber. The optical fiber is imparted with a twist that is an elastic torsion with stress.

Abstract: A semiconductor device is provided with a semiconductor region, a gate electrode, a source electrode and a drain electrode. The semiconductor region is formed on a semiconductor substrate surface and includes a first semiconductor portion of a first conducting type, a second semiconductor portion of a second conducting type, a band gap distinct from the substrate's band gap, more than two accumulated semiconductor layers, and junctions between the layers. The semiconductor layers each contain an impurity of the first conducting type. The gate electrode adjoins a heterojunction between the second semiconductor portion and the semiconductor substrate through a gate insulation film. The source electrode is coupled to the semiconductor region. The drain electrode is coupled to the semiconductor substrate.