Abstract: A memory element which stably performs operations such as data recording and which has a stable structure with respect to heat is provided. A memory element 10 includes a memory layer 4 and an ion source layer 3 positioned between the first electrode 2 and second electrode 6, in which the ion source layer 3 contains any of elements selected from Cu, Ag and Zn, and any of elements selected from Te, S and Se, and the memory layer 4 is made of any of tantalum oxide, niobium oxide, aluminum oxide, hafnium oxide and zirconium oxide, or is made of mixed materials thereof.

Abstract: There are provided a magnetoresistive device having excellent magnetic properties and a magnetic memory apparatus including this magnetoresistive device and which has excellent read and write characteristics. A magnetoresistive device has an arrangement including a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) being opposed to each other through an intermediate layer 6 to obtain variations in magnetoresistance by an electric current flowing in the direction perpendicular to the film plane.

Abstract: A memory element is provided in which recording and erasure of information can be performed easily and stably. A memory element 10 includes a memory layer 4 positioned between a first electrode 2 and a second electrode 6, in which an element selected from Cu, Ag, and Zn is contained in the memory layer 4 or in a layer 3 in contact with the memory layer 4, a resistance of the memory element 10 is changed by a voltage applied to the memory element 10 to perform recording of information, and in an erasing process of changing from a recorded state of low resistance value of the memory element 10 to an erased state of high resistance value of the memory element 10, a fluctuation, which is caused by an increase of the voltage applied to the memory element 10, of the resistance value of the memory element 10 at the end of the erasing process is within ten times at a maximum.

Abstract: A magnetoresistive effect element may be given satisfactory magnetic characteristics because a deterioration of a magnetoresistive changing rate by annealing can be suppressed and a magnetic memory device includes this magnetoresistive effect element to provide excellent write characteristics. A magnetoresistive effect element has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to cause an electric current to flow in the direction perpendicular to the layer surface to obtain a magnetoresistive change. A magnetic memory device comprises the magnetoresistive effect element 1 in which at least one of the pair of ferromagnetic layers 5, 7 contains an amorphous ferromagnetic material whose crystallization temperature is higher than 623 K and bit lines and word lines sandwiching this magnetoresistive effect element and the magnetoresistive effect element in the thickness direction.

Abstract: A magnetoresistive effect element (1) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer (5) and magnetization free layer (7)) is opposed to each other through an intermediate layer (6) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface and in which the ferromagnetic material layers are annealed by anneal including rotating field anneal and the following static field anneal. A magnetic memory device comprises this magnetoresistive effect element (1) and bit lines and word lines sandwiching the magnetoresistive effect element (1) in the thickness direction. When the magnetoresistive effect element (1) and the magnetic memory device are manufactured, the ferromagnetic material layers (5, 7) are annealed by rotating field anneal and the following static field anneal.

Abstract: There are provided a magnetoresistive effect element having a satisfactory magnetic characteristic and a magnetic memory device including this magnetoresistive effect element to produce excellent write/read characteristics. A magnetoresistive effect element 1 has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to produce a magnetoresistive change by a current flowing to the direction perpendicular to the film plane, the magnetization free layer having a normalized resistance ranging from 2000 ?nm2 to 10000 ?nm2 where a product of a specific resistance obtained when a current flows to the film thickness direction of the magnetization free layer 7 and a film thickness is defined as the normalized resistance. A magnetic memory device includes this magnetoresistive effect element 1 and bit lines and word lines sandwiching the magnetoresistive effect element 1.

Abstract: There are provided a magnetoresistive effect element having a satisfactory magnetic characteristic and a magnetic memory device including this magnetoresistive effect element to produce excellent write/read characteristics. A magnetoresistive effect element 1 has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to produce a magnetoresistive change by a current flowing to the direction perpendicular to the film plane, the magnetization free layer having a normalized resistance ranging from 2000 ?nm2 to 10000 ?nm2 where a product of a specific resistance obtained when a current flows to the film thickness direction of the magnetization free layer 7 and a film thickness is defined as the normalized resistance. A magnetic memory device includes this magnetoresistive effect element 1 and bit-lines and word lines sandwiching the magnetoresistive effect element 1.

Abstract: In a magnetoresistive element which includes at least a pair of ferromagnetic layers stacked with having an intermediate layer inbetween and achieves a change in the magnetic resistance by permitting a current to flow in the direction which crosses the plane of the stacked layers, by virtue of having a construction wherein at least one ferromagnetic layer constituting an information recording layer has an amorphous structure containing a CoFeB or CoFeNiB alloy and has a plane form having a longer axis in one direction wherein both sides thereof along the longer axis direction form a straight line or a curved outward, and the both ends thereof in the longer axis direction form a curved or bent outward from, wherein the pattern form has an aspect ratio of 1:1.2 to 1:3.5, excellent asteroid curve having consistency in the properties can be stably obtained.

Abstract: Display control is made so that meteor blocks (101-104) falling from the outer space are piled up on the surface of earth. When the player operates a cursor (106) for piled up meteor blocks (105) to designate them as objects to be operated, and presses a button, the meteor blocks are vertically re-arranged. When the meteor blocks of the same type line up as a result of re arranging, they can be ignited and launched. When the meteor blocks rise up to the outer space, they can be cleared. On the other hand, when the meteor blocks stall halfway, they cannot be cleared, and fall on the surface of earth again.

Abstract: A magnetic memory device can information with a low power consumption by inhibiting the coercive force from being increased by a demagnetizing field in a free layer, regardless of the thickness, moment, and the like of the free layer, even when the size of a magnetoresistive element is reduced.

Abstract: There are provided a magnetoresistive effect element having a satisfactory magnetic characteristic and a magnetic memory device including this magnetoresistive effect element to produce excellent write/read characteristics. A magnetoresistive effect element 1 has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to produce a magnetoresistive change by a current flowing to the direction perpendicular to the film plane, the magnetization free layer having a normalized resistance ranging from 2000 ?nm2 to 10000 ?nm2 where a product of a specific resistance obtained when a current flows to the film thickness direction of the magnetization free layer 7 and a film thickness is defined as the normalized resistance. A magnetic memory device includes this magnetoresistive effect element 1 and bit lines and word lines sandwiching the magnetoresistive effect element 1.

Abstract: There are provided a magnetoresistive effect element having a satisfactory magnetic characteristic and a magnetic memory device including this magnetoresistive effect element to produce excellent write/read characteristics. A magnetoresistive effect element 1 has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to produce a magnetoresistive change by a current flowing to the direction perpendicular to the film plane, the magnetization free layer having a normalized resistance ranging from 2000 ?nm2 to 10000 ?nm2 where a product of a specific resistance obtained when a current flows to the film thickness direction of the magnetization free layer 7 and a film thickness is defined as the normalized resistance. A magnetic memory device includes this magnetoresistive effect element 1 and bit-lines and word lines sandwiching the magnetoresistive effect element 1.

Abstract: In a magnetoresistive element which includes at least a pair of ferromagnetic layers stacked with having an intermediate layer inbetween and achieves a change in the magnetic resistance by permitting a current to flow in the direction which crosses the plane of the stacked layers, by virtue of having a construction wherein at least one ferromagnetic layer constituting an information recording layer has an amorphous structure containing a CoFeB or CoFeNiB alloy and has a plane form having a longer axis in one direction wherein both sides thereof along the longer axis direction form a straight line or a curved outward, and the both ends thereof in the longer axis direction form a curved or bent outward from, wherein the pattern form has an aspect ratio of 1:1.2 to 1:3.5, excellent asteroid curve having consistency in the properties can be stably obtained.

Abstract: A spin-valve film used in a magnetoresistive-effect magnetic head includes an antiferromagnetic layer, a magnetization fixing layer, a non-magnetic layer, and a free layer. The magnetization fixing layer or the free layer is provided with a layered ferromagnetic structure which includes a pair of magnetic layers through the intermediary of a non-magnetic layer. In the layered ferromagnetic structure, a surface oxidation layer is formed on the surface of the non-magnetic intermediate layer to the side of the non-magnetic layer.

Abstract: There are provided a magnetoresistive effect element having a satisfactory magnetic characteristic and a magnetic memory device including this magnetoresistive effect element to produce excellent write/read characteristics. A magnetoresistive effect element 1 has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to produce a magnetoresistive change by a current flowing to the direction perpendicular to the film plane, the magnetization free layer having a normalized resistance ranging from 2000 ?nm2 to 10000 ?nm2 where a product of a specific resistance obtained when a current flows to the film thickness direction of the magnetization free layer 7 and a film thickness is defined as the normalized resistance. A magnetic memory device includes this magnetoresistive effect element 1 and bit lines and word lines sandwiching the magnetoresistive effect element 1.

Abstract: A magnetic memory device can information with a low power consumption by inhibiting the coercive force from being increased by a demagnetizing field in a free layer, regardless of the thickness, moment, and the like of the free layer, even when the size of a magnetoresistive element is reduced.

Abstract: A magnetoresistive effect element may be given satisfactory magnetic characteristics because a deterioration of a magnetoresistive changing rate by annealing can be suppressed and a magnetic memory device includes this magnetoresistive effect element to provide excellent write characteristics.

Abstract: In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous or microcrystal structure or a material layer the main portion of which has an amorphous or microcrystal structure. The magnetoresistive effect element can produce excellent magnetic-resistance characteristics, and a magnetic memory element and a magnetic memory device using the magnetoresistive effect element as a memory element thereof can improve both of write and read characteristics at the same time.

Abstract: A magnetoresistive effect element (1) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer (5) and magnetization free layer (7)) is opposed to each other through an intermediate layer (6) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface, the magnetization free layer (7) is made of a ferromagnetic material containing FeCoB or FeCoNiB and the magnetization free layer (7) has a film thickness ranging from 2 nm to 8 nm. A magnetic memory device comprises this magnetoresistive effect element (1) and bit lines and word lines sandwiching the magnetoresistive effect element (1) in the thickness direction. There are provided the magnetoresistive effect element having satisfactory magnetic characteristics and the magnetic memory device including this magnetoresistive effect element and which can obtain excellent write/read characteristics.

Abstract: There are provided a magnetoresistive effect element having a satisfactory magnetic characteristic and a magnetic memory device including this magnetoresistive effect element to produce excellent write/read characteristics.