Abstract: Write characteristics and read characteristics can be improved at the same time by applying novel materials to ferromagnetic layers. In a magneto resistive effect element having a pair of ferromagnetic layers being opposed to each other through an intermediate layer to cause a current to flow in the direction perpendicular to the film plane to obtain a magnetoresistive change, at least one of the ferromagnetic layers contains a ferromagnetic material containing Fe, Co and B. The ferromagnetic material should preferably contain FeaCobNicBd (in the chemical formula, a, b, c and d represent atomic %. 5≦a≦45, 35≦b≦85, 0≦c≦35, 10≦d≦30. a+b+C+d=100).

Abstract: When a tunnel magnetoresistive effect element having a multilayer film structure containing two ferromagnetic material layers (11, 12) and a barrier layer (13) is constructed, after one ferromagnetic material layer (11) had been deposited, a conductive layer (16), formed by adding a material of an element different from a metal material to said metal material serving as a principal component thereof, is deposited on the ferromagnetic material layer (11) and the barrier layer (13) is formed by oxidizing the conductive layer (16), whereafter the other ferromagnetic material layer (12) is deposited on the barrier layer (13). Thus, in the tunnel magnetoresistive effect type memory device, dispersion of resistance value between respective elements can be suppressed while a large TMR ratio can be obtained.

Abstract: At least, an antiferromagnetic layer 4, a magnetization fixing layer 12, a non-magnetic layer 9, and a free layer 10 are successively formed. The magnetization fixing layer 12 or the free layer 10 is provided with a layered ferrimagnetic structure which comprises a pair of magnetic layers 5 and 8 through the intermediary of a non-magnetic intermediate layer 6. In the layered ferrimagnetic structure, a surface oxidation layer 7 is formed on the surface of the non-magnetic intermediate layer 6 to the side of the non-magnetic layer 9.

Abstract: A magnetoresistive effect element (1) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer (5) and magnetization free layer (7)) is opposed to each other through an intermediate layer (6) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface and in which the ferromagnetic material layers are annealed by anneal including rotating field anneal and the following static field anneal. A magnetic memory device comprises this magnetoresistive effect element (1) and bit lines and word lines sandwiching the magnetoresistive effect element (1) in the thickness direction. When the magnetoresistive effect element (1) and the magnetic memory device are manufactured, the ferromagnetic material layers (5, 7) are annealed by rotating field anneal and the following static field anneal.

Abstract: A magnetoresistive effect element (1) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer (5) and magnetization free layer (7)) is opposed to each other through an intermediate layer (6) to obtain a magnetoresistive change by causing a current to flow-in the direction perpendicular to the layer surface, the magnetization free layer (7) is made of a ferromagnetic material containing FeCoB or FeCoNiB and the magnetization free layer (7) has a film thickness ranging from 2 nm to 8 nm. A magnetic memory device comprises this magnetoresistive effect element (1) and bit lines and word lines sandwiching the magnetoresistive effect element (1) in the thickness direction. There are provided the magnetoresistive effect element having satisfactory magnetic characteristics and the magnetic memory device including this magnetoresistive effect element and which can obtain excellent write/read characteristics.

Abstract: When a tunnel magnetoresistive effect element having a multilayer film structure containing two ferromagnetic material layers (11, 12) and a barrier layer (13) is constructed, after one ferromagnetic material layer (11) had been deposited, a conductive layer (16), formed by adding a material of an element different from a metal material to said metal material serving as a principal component thereof, is deposited on the ferromagnetic material layer (11) and the barrier layer (13) is formed by oxidizing the conductive layer (16), whereafter the other ferromagnetic material layer (12) is deposited on the barrier layer (13). Thus, in the tunnel magnetoresistive effect type memory device, dispersion of resistance value between respective elements can be suppressed while a large TMR ratio can be obtained.

Abstract: A first ferromagnetic layer is made to show a single magnetic domain to prevent any magnetic walls from appearing. A pair of bias layers 4 are made of a hard magnetic material showing a high resistivity are arranged at opposite ends of a TMR thin film 3. As a result, the sense current flowing through the TMR thin film 3 is prevented from diverting to the bias layers 4. Thus, a sufficiently strong bias magnetic field can be applied to the TMR thin film 3. As a result, the free layer 13 of the TMR thin film 3 is made to show a single magnetic domain to prevent any magnetic walls from appearing.

Abstract: A magnetoresistive element including a free layer having rotatable magnetization, in which information is recorded in the magnetoresistive element by the rotation of the magnetization of the free layer, is provided. The free layer is a laminate that includes at least one ferromagnetic sublayer composed of a ferromagnetic material and at least one low-saturation-magnetization ferromagnetic sublayer having a lower saturation magnetization than that of the ferromagnetic sublayer.

Abstract: At least, an antiferromagnetic layer 4, a magnetization fixing layer 12, a non-magnetic layer 9, and a free layer 10 are successively formed. The magnetization fixing layer 12 or the free layer 10 is provided with a layered ferrimagnetic structure which comprises a pair of magnetic layers 5 and 8 through the intermediary of a non-magnetic intermediate layer 6. In the layered ferrimagnetic structure, a surface oxidation layer 7 is formed on the surface of the non-magnetic intermediate layer 6 to the side of the non-magnetic layer 9.

Abstract: A magnetoresistance-effect element comprising a magnetism-sensing layer 9, a low-resistance metal layer 10 and an oxide layer 11. The magnetism-sensing layer 9 has its electric resistance changed in accordance with an external magnetic field. The low-resistance metal layer 9 is formed in contact with the magnetism-sensing layer 9. The oxide layer 11 is provided on that surface of the metal layer 10 which faces away from the magnetism-sensing layer 9.

Abstract: The first ferromagnetic layer is made to show a single magnetic domain to prevent any magnetic wall from appearing. A pair of bias layers 4, 4 made of a hard magnetic material showing a high resistivity are arranged at opposite ends of a TMR thin film 3. As a result, the sense current flowing through the TMR thin film 3 is prevented from diverting to the bias layers 4, 4. Thus, a sufficiently strong bias magnetic field can be applied to the TMR thin film 3. As a result, the free layer 13 of the TMR thin film 3 is made to show a single magnetic domain to prevent any magnetic wall from appearing.

Abstract: A spin-valve film which enables a high output to be obtained and thermal stability to be improved without a necessity of reducing the thickness of films which constitute the spin-valve film, a spin valve type magnetoresistance-effect device and a magnetic head comprising the spin valve type magnetoresistance-effect device. A spin-valve film according to the present invention comprises a fixed layer in which a direction of magnetization is to be directed to substantially a predetermined direction; a non-magnetic layer; and a free layer in which a direction of magnetization is to be changed by an external magnetic field, wherein the free layer comprises at least a laminate film having a Ta film and a NiFeTa film.

Abstract: A detector position adjusting mechanism for a rangefinder in an automatic focusing system having a light emitting element, a photodetector and a detecting circuit is disclosed. In the adjusting mechanism, a first biasing member biases the light emitting element in one direction parallel to the optical axis of the light emitting element so as to urge the light emitting element towards a reference surface of a holding body for holding the light emitting element, and a second biasing member biases the light emitting element toward the holding body in a direction parallel to the base line. Furthermore, an adjustment member is engaged in a cam surface of the light emitting element so as to reposition the light emitting element in the direction parallel to the base line.