Abstract: A semiconductor device includes: an anode electrode, formed on a front surface of a semiconductor substrate; a cathode electrode, formed on a back surface; a P layer, formed on the anode electrode side; an N layer, formed on the cathode electrode side; an N+ layer, arranged between the P layer and the N layer and having a higher carrier concentration than the N layer; and an anode trench, which extends from the front surface of the semiconductor substrate toward the back surface side thereof and extends to the N+ layer through the P layer, and in which an insulating film is formed between the peripheral N+ layer, and a conductive material arranged inside is connected to the anode electrode.

Abstract: A trench gate type IGBT includes a plurality of trenches, including a plurality of gate trenches having a gate region inside, and a plurality of emitter trenches having an emitter region connected to an emitter electrode. A mesa section adjacent to the trench has a second mesa region, which does not function as a channel; and a contact, which connects the emitter electrode; the second mesa region being sandwiched between the gate trench and the emitter trench.

Abstract: [Problem to be solved] The disclosure is to have an appropriate short circuit withstand capacity and reduce turn-off loss and conduction loss. [Solution] A trench gate type IGBT includes: a semiconductor substrate; and a plurality of trench-type gates, extending from the front surface of the semiconductor substrate to the back surface side and controlling a current flowing, by application of a voltage, to a channel region formed in the periphery. The trench gate type IGBT controls a current between an emitter and a collector by the voltage applied to the trench-type gates. The plurality of trench-type gates include: one or more main gates, which have a relatively long ON time; and one or more control gates, which have a relatively short ON time, are turned on after the main gates are turned on, and are turned off before the main gates are turned off.

Abstract: [Problem to be solved] To reduce a loss according to an operating condition of high-frequency use or low-frequency use. [Solution] A trench gate type IGBT includes: a gate trench 120G, which extends from the front surface toward the back surface side of a semiconductor substrate, and causes a current to flow through a channel region formed in the periphery by an applied voltage; a switch trench 120SW, which extends from the front surface toward the back surface side of the semiconductor substrate and has no channel region formed therearound; and a setting terminal for externally controlling the voltage of the switch trench 120SW. A switching between a first state, in which a voltage drop at on-time is relatively small and an energy loss at turn-off time is relatively large, and a second state, in which the voltage drop at on-time is relatively large and the energy loss at turn-off time is relatively small, can be performed, according to a voltage applied to the setting terminal.

Abstract: [Problem to be solved] To reduce recovery loss. [Solution] A semiconductor device 10 includes: an anode electrode 20, formed on a front surface of a semiconductor substrate 12; a cathode electrode 22, formed on a back surface; a P layer 16, formed on the anode electrode 20 side; an N layer 14, formed on the cathode electrode 22 side; an N+ layer 26, arranged between the P layer 16 and the N layer 14 and having a higher carrier concentration than the N layer 14; and an anode trench 30, which extends from the front surface of the semiconductor substrate 12 toward the back surface side thereof and extends to the N+ layer 26 through the P layer 16, and in which an insulating film 32 is formed between the peripheral N+ layer 26, and a conductive material 34 arranged inside is connected to the anode electrode 20.

Abstract: A trench gate type IGBT includes a plurality of trenches, including a plurality of gate trenches having a gate region inside, and a plurality of emitter trenches having an emitter region connected to an emitter electrode. A mesa section adjacent to the trench has a second mesa region, which does not function as a channel; and a contact, which connects the emitter electrode; the second mesa region being sandwiched between the gate trench and the emitter trench.

Abstract: A semiconductor device includes a semiconductor substrate; an anode electrode, formed on a surface on one side of the semiconductor substrate; a cathode electrode, formed on a surface on the other side of the semiconductor substrate; a P layer, formed on the anode electrode side in the semiconductor substrate; and an N layer, formed on the cathode electrode side in the semiconductor substrate and on the other side of the P layer. The cathode electrode and the N layer are Schottky functioned, the cathode electrode is a metal having work function ranging from 4.2 to 4.3, and the carrier concentration of the N layer ranges from 1×e12 to 1×e18/cm3.

Abstract: A nonaqueous electrolyte secondary battery includes an electrode assembly and an electrolyte solution. The electrode assembly is impregnated with at least part of the electrolyte solution. The electrode assembly includes a positive electrode, a negative electrode, and a separator. The separator separates the positive electrode and the negative electrode from each other. The negative electrode includes a negative electrode active material. The negative electrode active material includes graphite. The following relation of a formula (1) is satisfied: “1.60?NPR/AAR?2.55”. “NPR” represents a ratio of a negative electrode charging capacity to a positive electrode charging capacity. “AAR” represents a ratio of an effective discharging capacity of the negative electrode to a total of a capacity corresponding to an amount of inactive lithium adhered to the negative electrode and the effective discharging capacity of the negative electrode.

Abstract: Provided is a galvannealed steel sheet having high strength and excellent deep drawability, and being further excellent in slab cracking resistance and secondary working embrittlement resistance. A base metal steel sheet of the galvannealed steel sheet has a chemical composition containing, in mass %: C: 0.0080% or less; Si: 0.7% or less; Mn: 1.0 to 2.5%; P: more than 0.030 to 0.048%; S: 0.025% or less; Al: 0.005 to 0.20%; N: 0.010% or less; Ti: 0.005 to 0.040%; Nb: 0.005 to 0.060%; and B: 0.0005 to 0.0030%, with the balance being Fe and impurities, satisfying Formula (1) to (4). A galvannealed layer contains 7 to 15 mass % of Fe. 25×P+4×Si?3.6??(1) B?X1?0.0005??(2) C?(12/93)×Nb?X2??0.

Abstract: Provided are a communication authentication apparatus and a communication system that enable authentication for easily and safely connecting a communication device to an access point, and improvement of convenience and safety by appropriately controlling communication with the communication device. The communication authentication apparatus (10) for performing authentication for connecting the communication device (20) to the access point (40) of a wireless LAN includes an NFC unit (12) having a function of authentication by performing communication using NFC with the communication device (20) by proximity or contact with the communication device (20), and a power supply circuit (13).

Abstract: Provided is a galvannealed steel sheet having high strength and excellent deep drawability, and being further excellent in slab cracking resistance and secondary working embrittlement resistance. A base metal steel sheet of the galvannealed steel sheet has a chemical composition containing, in mass %: C: 0.0080% or less; Si: 0.7% or less; Mn: 1.0 to 2.5%; P: more than 0.030 to 0.048%; S: 0.025% or less; Al: 0.005 to 0.20%; N: 0.010% or less; Ti: 0.005 to 0.040%; Nb: 0.005 to 0.060%; and B: 0.0005 to 0.0030%, with the balance being Fe and impurities, satisfying Formula (1) to (4). A galvannealed layer contains 7 to 15 mass % of Fe. 25×P+4×Si?3.6??(1) B?X1?0.0005??(2) C?(12/93)×Nb?X2??0.

Abstract: Authentication method that provides: to make an authentication device, randomly attaching a plurality of reflecting particles, such as glitter, on a support; a first step of acquiring, with an optical acquisition device, at least two first images of the authentication device, the two first images each being acquired according to different lighting conditions; a first step of encoding each of the two first images in order to determine at least a first identifying indicator to be attributed to the authentication device.

Abstract: According to one embodiment, an image display device includes an acquisition module and a display processing module. The acquisition module is configured to acquire a taken image which is taken with a camera and which includes an optical recognition code representing identification information by forming a plurality of elements in a shape of a line. The display processing module is configured to superpose and display a three-dimensional object image corresponding to the identification information, on the taken image. An orientation of the three-dimensional object image superposed and displayed on the taken image is determined based on an orientation of the optical recognition code on the taken image and an inclination of the camera.

Abstract: An energy storage system having a number of trays with each tray having a number of battery cells in which power is controllably stored and discharged. A first Battery Management System (BMS) is electrically coupled to a tray contained in a rack of trays. A second BMS is electrically coupled to and controls the first BMS. The first BMS includes a control unit electrically coupled to and controlling the battery cells. It further includes a switch unit electrically coupled to the control unit and selectively applying driving power according to a control signal from the second BMS.

Abstract: A battery system having components with reduced maximum voltage tolerance requirements is disclosed. The battery system includes a battery pack with battery modules, and measuring units, which are connected to the battery modules. The measuring units have first analog front ends (AFEs) for monitoring the at least two battery modules. Each first AFE is configured to transmit information related to the monitored characteristic via an isolator to a processor configured to control the battery pack based on the transmitted information. The isolator receives the transmitted information from an AFE which is not connected to the battery module having the least electric potential or to the battery module having the greatest electric potential.

Abstract: A battery multi-series system and a communication method thereof. The battery multi-series system includes a master battery management system managing a battery; and a block master battery management system connected to the master battery management system and receiving data from at least one slave battery management system and storing the received data, wherein the master battery management system receives data periodically from the block master battery management system.

Abstract: A circuit for measuring voltage of a battery and a power storage system using the same. According to one aspect, the circuit includes a switching element connected to the battery and configured to output a first signal at a first voltage level. The switching element is configured to be turned-on in response to a voltage measuring control signal. The circuit also includes a voltage conversion circuit connected to the switching element. The voltage conversion circuit is configured to output a second signal at a second voltage level that is proportional to the first voltage level. An analog-digital converter is configured to receive the second signal and convert the received second signal into a digital signal. A controller is configured to transfer the voltage measurement control signal to the switching element, and receive the digital signal from the analog-digital converter.

Abstract: A battery system is disclosed. In one embodiment, the system includes i) a plurality of battery modules each of which is configured to store power, wherein each battery module is electrically connected to at least one other battery module and ii) a plurality of management units configured to monitor states of the battery modules. Each management unit is electrically connected to at least one other management unit and one or more of the battery modules. Each management unit may include: at least one measuring unit configured to perform the monitoring and a receiving unit configured to i) receive measurement data including the monitoring results from the measuring unit via a first communication protocol and ii) receive measurement data from another receiving unit included in another management unit via a second communication protocol different from the first communication protocol.

Abstract: A battery pack and a driving method thereof. The battery pack includes a battery cell; a charge switch and a discharge switch installed in a charge/discharge line of a battery cell; and a microcontroller to sense and store voltages of the battery cell, to compare the voltages of the battery cell before and after the microcontroller is reset, and to controls the charge switch and the discharge switch based on the sensed voltages of the battery cell such that the microcontroller turns off only one of the charge switch and the discharge switch when there is a change between the voltages of the battery cell before and after the microcontroller is reset.

Abstract: A charging control method for a battery pack including a plurality of battery cells in which a full charge voltage value is initially set as a first voltage value. The charging control method includes: charging the plurality of battery cells to the first voltage value in an initial charge mode; and resetting the full charge voltage value to a second voltage value less than the first voltage value in a subsequent charge mode.