Patents by Inventor Tetsuzo Ueda
Tetsuzo Ueda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120146093Abstract: A nitride semiconductor device includes a semiconductor multilayer formed on a substrate, a first ohmic electrode and a Schottky electrode spaced apart from each other on the semiconductor multilayer; and a passivation film covering a top of the semiconductor multilayer. The semiconductor multilayer 102 includes a first nitride semiconductor layer, a second nitride semiconductor layer, and a p-type third nitride semiconductor layer 124 sequentially formed on the substrate. The third nitride semiconductor layer contains p-type impurities, and is selectively formed between the first ohmic electrode and the Schottky electrode in contact with the Schottky electrode.Type: ApplicationFiled: February 13, 2012Publication date: June 14, 2012Applicant: Panasonic CorporationInventors: Daisuke SHIBATA, Masahiro Hikita, Hidetoshi Ishida, Tetsuzo Ueda
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Publication number: 20120126290Abstract: A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.Type: ApplicationFiled: January 27, 2012Publication date: May 24, 2012Applicant: Panasonic CorporationInventors: Yasuhiro UEMOTO, Masahiro Hikita, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda
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Publication number: 20120119261Abstract: A semiconductor device includes: a substrate 101, a first nitride semiconductor layer 104S which includes a plurality of nitride semiconductor layers formed on the substrate 101, and has a channel region; a second semiconductor layer 105 which is formed on the first nitride semiconductor layer 104S, and has a conductivity type opposite a conductivity type of the channel region; a conductive layer which is in contact with the second semiconductor layer 105, and includes a metal layer 107 or a high carrier concentration semiconductor layer having a carrier concentration of 1×1018 cm?3 or higher; an insulating layer 110 formed on the conductive layer; a gate electrode 111 formed on the insulating layer 110; and a source electrode 108 and a drain electrode 109 formed to laterally sandwich the second semiconductor layer 105.Type: ApplicationFiled: January 23, 2012Publication date: May 17, 2012Applicant: Panasonic CorporationInventors: Hidekazu UMEDA, Tetsuzo Ueda
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Patent number: 8164115Abstract: A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer formed over the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a larger band gap energy than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer and including a p-type nitride semiconductor with at least a single-layer structure; a gate electrode formed on the third nitride semiconductor layer; and a source electrode and a drain electrode formed in regions located on both sides of the gate electrode, respectively. The third nitride semiconductor layer has a thickness greater in a portion below the gate electrode than in a portion below the side of the gate electrode.Type: GrantFiled: January 20, 2011Date of Patent: April 24, 2012Assignee: Panasonic CorporationInventors: Masahiro Hikita, Tetsuzo Ueda, Manabu Yanagihara, Yasuhiro Uemoto, Tsuyoshi Tanaka
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Patent number: 8129748Abstract: A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.Type: GrantFiled: July 24, 2007Date of Patent: March 6, 2012Assignee: Panasonic CorporationInventors: Yasuhiro Uemoto, Masahiro Hikita, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda
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Patent number: 8101972Abstract: A nitride semiconductor device includes: first through third nitride semiconductor layers formed in sequence over a substrate. The second nitride semiconductor layer has a band gap energy larger than that of the first nitride semiconductor layer. The third nitride semiconductor layer has an opening. A p-type fourth nitride semiconductor layer is formed so that the opening is filled therewith. A gate electrode is formed on the fourth nitride semiconductor layer.Type: GrantFiled: October 26, 2010Date of Patent: January 24, 2012Assignee: Panasonic CorporationInventors: Masahiro Hikita, Tetsuzo Ueda
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Patent number: 8089096Abstract: A normally-off type field effect transistor includes: a first semiconductor layer which is made of a first hexagonal crystal with 6 mm symmetry and has a main surface including a C-axis of the first hexagonal crystal; a second semiconductor layer which is formed on the main surface of the first semiconductor layer and is made of a second hexagonal crystal with 6 mm symmetry having a band gap different from a band gap of the first hexagonal crystal; and a gate electrode, a source electrode and a drain electrode that are formed on the second semiconductor layer. Here, the film thickness of the first nitride semiconductor layer is 1.5 ?m or less and the second semiconductor layer is doped with impurities at a dose of 1×1013 cm?2 or more.Type: GrantFiled: September 6, 2006Date of Patent: January 3, 2012Assignee: Panasonic CorporationInventors: Hidetoshi Ishida, Masayuki Kuroda, Tetsuzo Ueda
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Patent number: 8086108Abstract: An optical transmission/reception device includes at least one light emitting portion and at least one light receiving portion on the same substrate. The light emitting portion includes at least a lower multilayer reflector and an active layer provided on the lower multilayer reflector. A metal layer including a plurality of opening portions is provided in an upper portion of the light emitting portion. Each of the opening portions has a size smaller than a light emission wavelength of the light emitting portion.Type: GrantFiled: July 25, 2008Date of Patent: December 27, 2011Assignee: Panasonic CorporationInventors: Tatsuya Tanigawa, Tetsuzo Ueda, Daisuke Ueda
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Publication number: 20110309400Abstract: A nitride semiconductor device includes a first nitride semiconductor layer having a C-plane as a growth surface, and unevenness in an upper surface; and a second nitride semiconductor layer formed on the first nitride semiconductor layer to be in contact with the unevenness, and having p-type conductivity. The second nitride semiconductor layer located directly on a sidewall of the unevenness has a p-type carrier concentration of 1×1018/cm3 or more.Type: ApplicationFiled: September 1, 2011Publication date: December 22, 2011Applicant: PANASONIC CORPORATIONInventors: Yasuyuki FUKUSHIMA, Tetsuzo Ueda
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Patent number: 8076698Abstract: In a transistor, an AlN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type control layer 105, and a p-type contact layer 106 are formed in this order on a sapphire substrate 101. The transistor further includes a gate electrode 110 in ohmic contact with the p-type contact layer 106, and a source electrode 108 and a drain electrode 109 provided on the undoped AlGaN layer 104. By applying a positive voltage to the p-type control layer 105, holes are injected into a channel to increase a current flowing in the channel.Type: GrantFiled: June 27, 2006Date of Patent: December 13, 2011Assignee: Panasonic CorporationInventors: Daisuke Ueda, Tsuyoshi Tanaka, Yasuhiro Uemoto, Tetsuzo Ueda, Manabu Yanagihara, Masahiro Hikita, Hiroaki Ueno
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Publication number: 20110297960Abstract: A method for manufacturing a transistor assembly includes the steps of: (a) forming a transistor; (b) polishing a base substrate; and (c) securing the transistor of which the base substrate is polished to a support substrate. The step (a) is a step of forming a first semiconductor layer and a second semiconductor layer on a principle surface of the base substrate. The step (b) is a step of polishing a surface of the base substrate opposite to the principle surface. The step (c) is a step of securing the transistor on the support substrate in the presence of a stress applied on the base substrate in such a direction that a warp of the base substrate is reduced. The base substrate is made of a material different from that of the first semiconductor layer and the second semiconductor layer, and a tensile stress is applied on the second semiconductor layer.Type: ApplicationFiled: August 19, 2011Publication date: December 8, 2011Applicant: PANASONIC CORPORATIONInventors: Kenichiro Tanaka, Tetsuzo Ueda, Hisayoshi Matsuo, Masahiro Hikita
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Publication number: 20110278540Abstract: Provided is a field-effect transistor which is capable of suppressing current collapse. An HEMT as the field-effect transistor includes: a first semiconductor layer made of a first nitride semiconductor; and a second semiconductor layer formed on the first semiconductor layer and made of a second nitride semiconductor having a greater band gap than a band gap of the first nitride semiconductor, wherein the first semiconductor layer includes a region in which a threading dislocation density increases in a stacking direction.Type: ApplicationFiled: May 19, 2011Publication date: November 17, 2011Applicant: Panasonic CorporationInventors: Kenichiro Tanaka, Tetsuzo Ueda, Hisayoshi Matsuo, Masahiro Hikita
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Publication number: 20110272740Abstract: A field-effect transistor includes a first semiconductor layer formed on a substrate, and a second semiconductor layer. The first semiconductor layer has a containing region provided as an isolation region which contains non-conductive impurities, and a non-containing region which contains no non-conductive impurities. A first region is defined by a vicinity of a portion of the interface between the containing region and the non-containing region, the portion of the interface being below a gate electrode, the vicinity including the portion of the interface and being included in the containing region. The second semiconductor layer includes a second region which is located directly above the first region. The concentration of the non-conductive impurities of the second region is lower than that of the first region.Type: ApplicationFiled: July 19, 2011Publication date: November 10, 2011Applicant: PANASONIC CORPORATIONInventors: Hidekazu UMEDA, Masahiro HIKITA, Tetsuzo UEDA
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Publication number: 20110272737Abstract: A transistor includes a transistor body, and a stress application section applying stress to the transistor body. The transistor body includes a formation substrate, and a first semiconductor layer and a second semiconductor layer which are sequentially stacked on the formation substrate. The second semiconductor layer having a wider bandgap than the first semiconductor layer. The stress application section applies stress to the transistor body so that tensile stress applied to the second semiconductor layer increases in accordance with an increase in a temperature.Type: ApplicationFiled: July 15, 2011Publication date: November 10, 2011Applicant: Panasonic CorporationInventors: Kenichiro TANAKA, Tetsuzo Ueda
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Publication number: 20110266554Abstract: In a manufacturing method of a semiconductor device, first, a first semiconductor layer, a second semiconductor layer, and a p-type third semiconductor layer are sequentially epitaxially grown on a substrate. After that, the third semiconductor layer is selectively removed. Then, a fourth semiconductor layer is epitaxially grown on the second semiconductor layer. Then, a gate electrode is formed on the third semiconductor layer.Type: ApplicationFiled: July 13, 2011Publication date: November 3, 2011Applicant: PANASONIC CORPORATIONInventors: Masahiro HIKITA, Kenichiro Tanaka, Tetsuzo Ueda
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Patent number: 8039329Abstract: A field effect transistor includes a nitride semiconductor layered structure that is formed on a substrate and includes a capping layer made of a compound represented by a general formula of InxAlyGa1?yN (wherein 0<x?1, 0?y<1 and 0<x+y?1). A non-alloy source electrode and a non-alloy drain electrode are formed on the capping layer so as to be spaced from each other.Type: GrantFiled: March 12, 2010Date of Patent: October 18, 2011Assignee: Panasonic CorporationInventors: Satoshi Nakazawa, Tetsuzo Ueda
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Publication number: 20110248337Abstract: A material of a gate electrode is a conductive oxide having a higher work function than that of conventionally used Pd and so on, thereby achieving a normally-off transistor without reducing the sheet carrier concentration of a heterojunction. It is thus possible to achieve a normally-off operation while reducing an increase in the specific on-state resistance.Type: ApplicationFiled: June 21, 2011Publication date: October 13, 2011Applicant: Panasonic CorporationInventors: Tatsuo Morita, Tetsuzo Ueda
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Publication number: 20110227093Abstract: The present invention has an object to provide an FET and a method of manufacturing the FET that are capable of increasing the threshold voltage as well as decreasing the on-resistance. The FET of the present invention includes a first undoped GaN layer; a first undoped AlGaN layer formed on the first undoped GaN layer, having a band gap energy greater than that of the first undoped GaN layer; a second undoped GaN layer formed on the first undoped AlGaN layer; a second undoped AlGaN layer formed on the second undoped GaN layer, having a band gap energy greater than that of the second undoped GaN layer; a p-type GaN layer formed in the recess of the second undoped AlGaN layer; a gate electrode formed on the p-type GaN layer; and a source electrode and a drain electrode which are formed in both lateral regions of the gate electrode, wherein a channel is formed at the heterojunction interface between the first undoped GaN layer and the first undoped AlGaN layer.Type: ApplicationFiled: June 1, 2011Publication date: September 22, 2011Applicant: PANASONIC CORPORATIONInventors: Masahiro HIKITA, Hidetoshi ISHIDA, Tetsuzo UEDA
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Publication number: 20110227132Abstract: The present invention has as an object to provide a FET having low on-resistance. The FET according to the present invention includes: first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a higher band gap energy than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer; a fourth nitride semiconductor layer formed on the third nitride semiconductor layer and having a higher band gap energy than the third nitride semiconductor layer. A channel is formed in a heterojunction interface between the first nitride semiconductor layer and the second nitride semiconductor layer.Type: ApplicationFiled: May 31, 2011Publication date: September 22, 2011Applicant: PANASONIC CORPORATIONInventors: Yoshiharu ANDA, Hidetoshi ISHIDA, Tetsuzo UEDA
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Patent number: 8013320Abstract: A nitride semiconductor device includes a semiconductor stacked structure which is formed of a nitride semiconductor having a first principal surface and a second principal surface opposed to the first principal surface and which includes an active layer. The first principal surface of the semiconductor stacked structure is formed with a plurality of indentations whose plane orientations are the {0001} plane, and the plane orientation of the second principal surface is the {1-101} plane. The active layer is formed along the {1-101} plane.Type: GrantFiled: March 1, 2007Date of Patent: September 6, 2011Assignee: Panasonic CorporationInventors: Hisayoshi Matsuo, Tatsuo Morita, Tetsuzo Ueda, Daisuke Ueda