Patents by Inventor Thai-Cheng Chua
Thai-Cheng Chua has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240352621Abstract: Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a plasma to form a nanocrystalline diamond film. The resulting nanocrystalline diamond films are formed on an interfacial oxide-rich amorphous layer between the nanocrystalline diamond film and a silicon substrate.Type: ApplicationFiled: April 20, 2023Publication date: October 24, 2024Applicant: Applied Materials, Inc.Inventors: Sze Chieh Tan, Vicknesh Sahmuganathan, Christian W. Valencia, Thai Cheng Chua, Masahiro Kawasaki, Jenn-Yue Wang, John Sudijono
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Publication number: 20240282554Abstract: Embodiments include a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source includes a plurality of high-frequency emission modules, where each high-frequency emission module comprises and oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, each high-frequency emission module includes a different oscillator module.Type: ApplicationFiled: May 1, 2024Publication date: August 22, 2024Inventors: Thai Cheng Chua, Christian Amormino, Hanh Nguyen, Kallol Bera, Philip Allan Kraus
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Publication number: 20240191353Abstract: Embodiments of the disclosure relate to methods for reducing metal oxide layers to pure metal using microwave radiation. Specific embodiments provide methods of reducing a native metal oxide on a metal interconnect within a substrate feature comprising dielectric sidewalls. In some embodiments, surrounding dielectric materials are undamaged by the disclosed processes.Type: ApplicationFiled: December 7, 2022Publication date: June 13, 2024Applicant: Applied Materials, Inc.Inventors: Yoon Ah Shin, Bencherki Mebarki, Joung Joo Lee, Xianmin Tang, Thai Cheng Chua, Christian W. Valencia
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Publication number: 20240186118Abstract: Embodiments disclosed herein include a housing for a source array. In an embodiment, the housing comprises a conductive body, where the conductive body comprises a first surface and a second surface opposite from the first surface. In an embodiment a plurality of openings are formed through the conductive body and a channel is disposed into the second surface of the conductive body. In an embodiment, a cover is over the channel, and the cover comprises first holes that pass through a thickness of the cover. In an embodiment, the housing further comprises a second hole through a thickness of the conductive body. In an embodiment, the second hole intersects with the channel.Type: ApplicationFiled: January 22, 2024Publication date: June 6, 2024Inventors: JAMES CARDUCCI, RICHARD C. FOVELL, LARRY D. ELIZAGA, SILVERST RODRIGUES, VLADIMIR KNYAZIK, PHILIP ALLAN KRAUS, THAI CHENG CHUA
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Patent number: 12002654Abstract: Embodiments include a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source includes a plurality of high-frequency emission modules, where each high-frequency emission module comprises and oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, each high-frequency emission module includes a different oscillator module.Type: GrantFiled: June 25, 2021Date of Patent: June 4, 2024Assignee: Applied Materials, Inc.Inventors: Thai Cheng Chua, Christian Amormino, Hanh Nguyen, Kallol Bera, Philip Allan Kraus
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Publication number: 20240153795Abstract: Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a chamber, and a lid configured to seal the chamber. In an embodiment, a modular microwave plasma applicator is provided through the lid, and an optical port is provided through the lid and adjacent to the modular microwave plasma source. In an embodiment, a pin is inserted in the optical port.Type: ApplicationFiled: November 4, 2022Publication date: May 9, 2024Inventors: Adam Fischbach, Richard McKissick, Brian Hatcher, Christian Valencia, Thai Cheng Chua, Philip Allan Kraus
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Publication number: 20240131789Abstract: The present disclosure provides various three-dimensional (3D) objects, some of which comprise a wire or 3D plane. Disclosed herein are methods, apparatus, software, and systems for their generation that may reduce or eliminate the need for auxiliary support during the formation of the 3D objects. The methods, apparatuses, software, and systems of the present disclosure may allow the formation of objects with short, diminished number, and/or spaced apart auxiliary support structures. These 3D objects may be objects with adjacent surfaces such as hanging structures and planar hollow 3D objects.Type: ApplicationFiled: May 15, 2023Publication date: April 25, 2024Inventors: Benyamin Buller, Kimon Symeonidis, Erel Milshtein, Thai Cheng Chua
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Publication number: 20240120210Abstract: Exemplary methods of etching a silicon-containing material may include flowing a first fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include flowing a sulfur-containing precursor into the remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the first fluorine-containing precursor and the sulfur-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include isotropically etching the layers of silicon nitride while substantially maintaining the silicon oxide.Type: ApplicationFiled: October 11, 2022Publication date: April 11, 2024Applicant: Applied Materials, Inc.Inventors: Mikhail Korolik, Paul E. Gee, Wei Ying Doreen Yong, Tuck Foong Koh, John Sudijono, Philip A. Kraus, Thai Cheng Chua
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Patent number: 11955331Abstract: Embodiments includes methods for forming a silicon nitride film on a substrate in a deposition chamber. In embodiments, the substrate is sequentially exposed to a sequence of processing gases, comprising: a silicon halide precursor that absorbs onto a surface of the substrate to form an absorbed layer of the silicon halide, a first reacting gas that includes N2 and one or both of Ar and He, and a second reacting gas comprising a hydrogen-containing gas and one or more of Ar, He, and N2. In embodiments, the hydrogen-containing gas includes at least one of H2 (molecular hydrogen), NH3 (ammonia), N2H2 (diazene), N2H4 (hydrazine), and HN3 (hydrogen azide). Embodiments may include repeating the sequence until a desired thickness of the silicon nitride film is obtained.Type: GrantFiled: February 20, 2018Date of Patent: April 9, 2024Assignee: Applied Materials, Inc.Inventors: Hanhong Chen, Kelvin Chan, Philip Allan Kraus, Thai Cheng Chua
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Patent number: 11881384Abstract: Embodiments disclosed herein include a housing for a source array. In an embodiment, the housing comprises a conductive body, where the conductive body comprises a first surface and a second surface opposite from the first surface. In an embodiment a plurality of openings are formed through the conductive body and a channel is disposed into the second surface of the conductive body. In an embodiment, a cover is over the channel, and the cover comprises first holes that pass through a thickness of the cover. In an embodiment, the housing further comprises a second hole through a thickness of the conductive body. In an embodiment, the second hole intersects with the channel.Type: GrantFiled: September 27, 2019Date of Patent: January 23, 2024Assignee: Applied Materials, Inc.Inventors: James Carducci, Richard C. Fovell, Larry D. Elizaga, Silverst Rodrigues, Vladimir Knyazik, Philip Allan Kraus, Thai Cheng Chua
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Patent number: 11721532Abstract: Embodiments include methods and apparatuses that include a plasma processing tool that includes a plurality of magnets. In one embodiment, a plasma processing tool may comprise a processing chamber and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources includes an array of applicators positioned over a dielectric plate that forms a portion of an outer wall of the processing chamber, and an array of microwave amplification modules. In an embodiment, each microwave amplification module is coupled to one or more of the applicators in the array of applicators. In an embodiment, the plasma processing tool may include a plurality of magnets. In an embodiment, the magnets are positioned around one or more of the applicators.Type: GrantFiled: June 3, 2021Date of Patent: August 8, 2023Assignee: Applied Materials, Inc.Inventors: Philip Allan Kraus, Thai Cheng Chua, Mani Subramani
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Patent number: 11670489Abstract: Embodiments disclosed herein include a source for a processing tool. In an embodiment, the source comprises a dielectric plate having a first surface and a second surface opposite from the first surface, and a cavity into the first surface of the dielectric plate. In an embodiment, the cavity comprises a third surface that is between the first surface and the second surface. In an embodiment, the source further comprises a dielectric resonator extending away from the third surface.Type: GrantFiled: June 17, 2021Date of Patent: June 6, 2023Assignee: Applied Materials, Inc.Inventors: Joseph F. AuBuchon, James Carducci, Larry D. Elizaga, Richard C. Fovell, Philip Allan Kraus, Thai Cheng Chua
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Publication number: 20230135935Abstract: Embodiments disclosed herein include a housing for a source assembly. In an embodiment, the housing comprises a conductive body with a first surface and a second surface opposite from the first surface, and a plurality of openings through a thickness of the conductive body between the first surface and the second surface. In an embodiment, the housing further comprises a channel into the first surface of the conductive body, and a cover over the channel. In an embodiment, a first stem over the cover extends away from the first surface, and a second stem over the cover extends away from the first surface. In an embodiment, the first stem and the second stem open into the channel.Type: ApplicationFiled: December 15, 2022Publication date: May 4, 2023Inventors: James Carducci, Richard C. Fovell, Larry D. Elizaga, Silverst Rodrigues, Thai Cheng Chua, Philip Allan Kraus
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Publication number: 20230109912Abstract: Embodiments disclosed herein include a method of etching a 3D structure. In an embodiment, the method comprises providing the 3D structure in a microwave plasma chamber. In an embodiment, the 3D structure comprises a substrate, and alternating layers of silicon oxide and silicon nitride over the substrate. In an embodiment, the method further comprises flowing a first gas into the microwave plasma chamber, where the first gas comprises sulfur and fluorine. In an embodiment, the method comprises flowing a second gas into the microwave plasma chamber, where the second gas comprises an inert gas. In an embodiment, the method further comprises striking a plasma in the microwave plasma chamber, and etching the silicon nitride, where an etching selectivity of silicon nitride to silicon oxide is 50:1 or greater.Type: ApplicationFiled: September 6, 2022Publication date: April 13, 2023Inventors: Thai Cheng Chua, CHRISTIAN VALENCIA, DOREEN YONG, TUCK FOONG KOH, JENN-YUE WANG, PHILIP ALLAN KRAUS
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Publication number: 20230040341Abstract: The present disclosure provides three-dimensional (3D) objects, 3D printing processes, as well as methods, apparatuses and systems for the production of a 3D object. Methods, apparatuses and systems of the present disclosure may reduce or eliminate the need for auxiliary supports. The present disclosure provides three dimensional (3D) objects printed utilizing the printing processes, methods, apparatuses and systems described herein.Type: ApplicationFiled: July 8, 2022Publication date: February 9, 2023Inventors: Benyamin Buller, Erel Milshtein, Sherman Seelinger, Thai Cheng Chua
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Publication number: 20230026546Abstract: Embodiments disclosed herein include a monolithic source array. In an embodiment, the monolithic source array comprises a dielectric plate having a first surface and a second surface opposite from the first surface. The monolithic source array may further comprise a plurality of protrusions that extend out from the first surface of the dielectric plate, wherein the plurality of protrusions and the dielectric plate are a monolithic structure.Type: ApplicationFiled: October 5, 2022Publication date: January 26, 2023Inventors: Thai Cheng Chua, Philip Allan Kraus
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Patent number: 11564292Abstract: Embodiments disclosed herein include a housing for a source assembly. In an embodiment, the housing comprises a conductive body with a first surface and a second surface opposite from the first surface, and a plurality of openings through a thickness of the conductive body between the first surface and the second surface. In an embodiment, the housing further comprises a channel into the first surface of the conductive body, and a cover over the channel. In an embodiment, a first stem over the cover extends away from the first surface, and a second stem over the cover extends away from the first surface. In an embodiment, the first stem and the second stem open into the channel.Type: GrantFiled: September 27, 2019Date of Patent: January 24, 2023Assignee: Applied Materials, Inc.Inventors: James Carducci, Richard C. Fovell, Larry D. Elizaga, Silverst Rodrigues, Thai Cheng Chua, Philip Allan Kraus
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Publication number: 20230017035Abstract: A method of forming graphene layers is disclosed. The method includes precleaning the substrate with a plasma formed from an argon- and hydrogen-containing gas, followed by forming a graphene layer by exposing the substrate to a microwave plasma to form a graphene layer on the substrate. The microwave plasma comprises hydrocarbon and hydrogen radicals. The substrate is then cooled. A capping layer may also be formed.Type: ApplicationFiled: June 20, 2022Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventors: Bencherki Mebarki, Thai Cheng Chua, Christian W. Valencia, Joung Joo Lee, Xianmin Tang, Xiao Chen
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Publication number: 20220389571Abstract: Methods for filling a substrate feature with a seamless dielectric gap fill are described. Methods comprise sequentially depositing a film with a seam and partially etching the film in the same processing chamber. Methods and apparatus allow for the same hardware to be used for PEALD deposition of a film as well as plasma etch of the film.Type: ApplicationFiled: May 26, 2022Publication date: December 8, 2022Applicant: Applied Materials, Inc.Inventors: Joseph AuBuchon, Philip A. Kraus, Thai Cheng Chua, James Canducci, Hanhong Chen, Zhejun Zhang, Hao Zhang, Xiankai Yu
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Patent number: 11501955Abstract: Embodiments described herein include an applicator frame for a processing chamber. In an embodiment, the applicator frame comprises a first major surface of the applicator frame and a second major surface of the applicator frame opposite the first major surface. In an embodiment, the applicator frame further comprises a through hole, wherein the through hole extends entirely through the applicator frame. In an embodiment, the applicator frame also comprises a lateral channel embedded in the applicator frame. In an embodiment the lateral channel intersects the through hole.Type: GrantFiled: February 1, 2021Date of Patent: November 15, 2022Assignee: Applied Materials, Inc.Inventors: Hanh Nguyen, Thai Cheng Chua, Philip Allan Kraus