Abstract: A low voltage bandgap reference circuit (200) is provided which includes a first current generator (202) having first and second circuit branches which include, respectively, first and second bipolar transistors having different sizing reference values for generating a first current at a first resistor that varies proportionally as a function of temperature; a second current generator (204, 205) having a third circuit branch which includes one or more field effect transistors and no bipolar transistors for generating a second current that varies inversely as a function of temperature; and a third circuit (206) connected to generate a bandgap reference current in response to the first current and the second current.

Abstract: A low voltage bandgap reference circuit (200) is provided which includes a first current generator (202) having first and second circuit branches which include, respectively, first and second bipolar transistors having different sizing reference values for generating a first current at a first resistor that varies proportionally as a function of temperature; a second current generator (204, 205) having a third circuit branch which includes one or more field effect transistors and no bipolar transistors for generating a second current that varies inversely as a function of temperature; and a third circuit (206) connected to generate a bandgap reference current in response to the first current and the second current.

Abstract: A method and apparatus are provided for controlling a drive terminal of a power transistor by applying a turn-off voltage to the drive terminal at a turn-off time, measuring a gate current at the drive terminal to detect a predetermined gate current slope, determining a first time increment after the turn-off time when the predetermined gate current slope is detected, determining a second time increment which is proportional to the first time increment and which expires within a Miller plateau for the power transistor, and lowering the gate current at the drive terminal to a predetermined current level upon expiration of the second time increment in order to reduce overvoltages at the power transistor.

Abstract: A gate drive circuit includes a first switch electrically coupled to a single-supply input voltage node, the first switch electrically coupling the voltage node with a first capacitor if switched on; a second switch electrically coupled to a ground node, the second switch electrically coupling the first capacitor with the ground node if switched on; and the first capacitor. A first capacitor lead of the first capacitor is electrically coupled to the first and second switches and a second capacitor lead of the first capacitor is arranged to connect with a power transistor gate.

Abstract: A voltage reference circuit comprising: a main amplifier, having an output-terminal for providing a reference-voltage-output-signal, wherein the output-terminal is connected to the first-input-terminal; an offset-stage, connected to at least one of a first-input-terminal and a second-input-terminal of the main amplifier; and a PN junction. The PN junction is configured, in use, to provide a junction-voltage, between the first-junction-terminal and the second-junction-terminal, wherein the junction-voltage decreases with increasing temperature. The offset-stage is configured, in use, to provide an offset-voltage between the first-input-terminal and the second-input-terminal, wherein the offset-voltage increases with increasing temperature.

Abstract: A voltage reference circuit comprising: a main amplifier, having an output-terminal for providing a reference-voltage-output-signal, wherein the output-terminal is connected to the first-input-terminal; an offset-stage, connected to at least one of a first-input-terminal and a second-input-terminal of the main amplifier; and a PN junction. The PN junction is configured, in use, to provide a junction-voltage, between the first-junction-terminal and the second-junction-terminal, wherein the junction-voltage decreases with increasing temperature. The offset-stage is configured, in use, to provide an offset-voltage between the first-input-terminal and the second-input-terminal, wherein the offset-voltage increases with increasing temperature.

Abstract: The present invention relates to an insulated gate bipolar transistor (IGBT) driver module for driving at least one gate of at least one IGBT device, and method therefor. The IGBT driver module comprises at least one series capacitance operably coupled between a driver component of the IGBT driver module and the at least one gate of the at least one IGBT device. The IGBT driver module further comprises at least one series capacitance charge adjustment component controllable to determine a gate voltage error (?Gerr) at the at least one gate of the at least one IGBT device and dynamically adjust a charge of the at least one series capacitance based at least partly on the determined gate voltage error (?Gerr).

Abstract: A method and apparatus for regulating a non-isolated high voltage converter applies a PWM signal to a power transistor that couples an input voltage to a floating ground node to charge an inductor and generate an output voltage which is measured with a first floating comparator to disable the PWM signal upon detecting a high threshold output voltage, the first floating comparator having inputs connected across first and second resistive elements to measure a voltage across a feedback resistor connected in series with a diode between the output voltage and a neutral ground reference. Subsequently, the output voltage is measured with a second floating comparator to enable the PWM signal upon detecting a low threshold output voltage, where the second floating comparator has inputs connected across the first and second resistive elements to measure the feedback voltage across the feedback resistor.

Abstract: A driver circuit for driving a portion of a motor system is disclosed. The driver circuit may include a current reverse detector operable to detect a current direction associated with the portion of the motor system, an insulated gate bipolar transistor (“IGBT”) driver, and an IGBT. The IGBT driver may include: a first input coupled to an output of the current reverse detector and a second input coupled to an operation indication signal.

Abstract: A method and apparatus for regulating a non-isolated high voltage converter applies a PWM signal to a power transistor that couples an input voltage to a floating ground node to charge an inductor and generate an output voltage which is measured with a first floating comparator to disable the PWM signal upon detecting a high threshold output voltage, the first floating comparator having inputs connected across first and second resistive elements to measure a voltage across a feedback resistor connected in series with a diode between the output voltage and a neutral ground reference. Subsequently, the output voltage is measured with a second floating comparator to enable the PWM signal upon detecting a low threshold output voltage, where the second floating comparator has inputs connected across the first and second resistive elements to measure the feedback voltage across the feedback resistor.

Abstract: A method and apparatus are provided for controlling a drive terminal of a power transistor by applying a turn-off voltage to the drive terminal at a turn-off time, measuring a gate current at the drive terminal to detect a predetermined gate current slope, determining a first time increment after the turn-off time when the predetermined gate current slope is detected, determining a second time increment which is proportional to the first time increment and which expires within a Miller plateau for the power transistor, and lowering the gate current at the drive terminal to a predetermined current level upon expiration of the second time increment in order to reduce overvoltages at the power transistor.

Abstract: An integrated circuit includes an insulated gate bipolar transistor (“IGBT”), a clamp element coupled to a control gate of the IGBT to allow current flow in a first direction when voltage is applied to the control gate of the IGBT, and a blocking element coupled to the control gate of the IGBT and to the clamp element. The blocking element allows current flow in a second direction when voltage is removed from the control gate of the IGBT, the second direction is opposite the first direction. A resistive element has a first terminal and a second terminal, the first terminal is coupled between an anode of the clamping element and an anode of the blocking element and the second terminal is coupled to an output of test circuitry.

Abstract: Operation of an insulated gate bipolar transistor (IGBT) is monitored by an apparatus that has a capacitor connected between a collector of the IGBT and an input node. A processing circuit, coupled to the input node, responds to current flowing through the capacitor by providing an indication whether a voltage level at the collector is changing and the rate of that change. The processing circuit also employs the capacitor current to provide an output voltage that indicates the voltage at the IGBT collector.

Abstract: An isolation circuit arranged to provide electrical isolation between at least one control module and at least one driver module. The isolation circuit comprises at least one boost circuit arranged to receive at least one control signal from the at least one control module, and boost the at least one control signal from a first voltage level signal to an increased voltage level signal. The isolation circuit further comprising at least a first capacitive isolation component comprising a first electrically conductive element and at least one further electrically conductive element formed from at least a part of printed circuit board layer, the first and at least one further electrically conductive elements being electrically isolated with respect to one another and arranged to comprise capacitive characteristics there between.

Abstract: A circuit including and a method utilizing an improved bootstrap topology provide power to a high side (HS) driver for high efficiency applications. The improved bootstrap topology includes a transfer capacitor to store charge and to recharge a bootstrap capacitor, which provides power to the HS driver. The improved bootstrap topology also includes a resistor connected to the transfer capacitor to charge the transfer capacitor from a voltage source and to isolate the transfer capacitor from high voltage pulses.

Abstract: A start-up method for a self-powered gate drive circuit driving a power transistor gate. The method comprises charging, with a single-supply voltage, a first supply capacitor of a first gate drive circuit; switching on a first power transistor by applying a current supplied by a discharge of the first supply capacitor of the first gate drive circuit to the gate of the first power transistor; charging a second supply capacitor of the first gate drive circuit using an output signal from the first power transistor; and re-charging the first supply capacitor by applying a current supplied by a discharge of the second supply capacitor to the first capacitor.

Abstract: A saturation edge detection circuit for testing a saturation level in an insulated gate bipolar transistor (“IGBT”) includes a first input operable to receive an on signal, a second input coupled to an IGBT driver circuit, and an output coupled to a control electrode of the IGBT. The output indicates a change in a state of a saturation voltage associated with the IGBT during operation of the IGBT.

Abstract: A gate drive circuit to drive a gate terminal of a power transistor. The gate drive circuit includes a first capacitor, a first switch, a measurement circuit and a reference source to generate a reference voltage. The first capacitor has a first terminal electrically coupled to the gate terminal of the power transistor. The first switch is arranged between a second terminal of the first capacitor and a first predetermined voltage. The measurement circuit is used to measure a differential voltage across the first capacitor. The gate drive circuit is configured to pre-charge the first capacitor to obtain a second predetermined voltage across the first capacitor. The gate drive circuit is further configured to arrange the first switch in an on state to turn on the power transistor and to electrically couple the first predetermined voltage to the second terminal of the first capacitor. The first capacitor is initially pre-charged at the second predetermined voltage.

Abstract: A self-powered gate drive circuit comprising a first capacitor electrically coupled to a power semiconductor collector node of the circuit; a first switch arranged between the first capacitor and a second capacitor, the first switch electrically coupling the first and second capacitors when switched on; the second capacitor; a first diode, the first diode anode electrically coupled to the first capacitor and the first diode cathode electrically coupled to the first switch; a second diode, the second diode cathode electrically coupled to the first capacitor and the second diode anode electrically coupled with a ground node of the circuit; and a second switch, wherein the second switch electrically couples the second capacitor with a power semiconductor gate node when switched on.

Abstract: The present invention comprises a method and apparatus for controlling an IGBT device. The method comprises, upon receipt of a first and at least one further IGBT control signals, the first IGBT control signal indicating a required change in operating state of the IGBT device, controlling an IGBT driver module for the IGBT device to change an operating state of the IGBT device by applying a first logical state modulation at an input of an IGBT coupling channel, and applying at least one further modulation to the logical state at the input of the IGBT coupling channel in accordance with the at least one further IGBT control signal within a time period from the first logical state modulation, the time period being less than a state change reaction period ?t for the at least one IGBT device.