Abstract: An electronic component comprising an electrically conductive carrier, an electronic chip on the carrier, an encapsulant encapsulating part of the carrier and the electronic chip, and an electrically insulating and thermally conductive interface structure, in particular covering an exposed surface portion of the carrier and a connected surface portion of the encapsulant, wherein the interface structure has a compressibility in a range between 1% and 20%, in particular in a range between 5% and 15%.

Abstract: A semiconductor device includes at least one highly doped region of an electrical device arrangement formed in a semiconductor substrate and a contact structure including an NTC (negative temperature coefficient of resistance) portion arranged adjacent to the at least one highly doped region at a front side surface of the semiconductor substrate. The NTC portion includes a negative temperature coefficient of resistance material.

Abstract: Semiconductor device with a semiconductor body that includes a clamping structure including a pn junction diode and a Schottky junction diode serially connected back to back between a first contact and a second contact. A breakdown voltage of the pn junction diode is greater than 100 V and a breakdown voltage of the Schottky junction diode is greater than 10 V.

Abstract: A semiconductor power package includes a pre-molded chip housing and an electrically conducting chip carrier cast-in-place in the pre-molded chip housing. The semiconductor power package further includes a power semiconductor chip bonded on the electrically conducting chip carrier. A covering material is provided to embed the power semiconductor chip. The covering material has an elastic modulus less than an elastic modulus of a material of the pre-molded chip housing and/or a thermal conductivity greater than a thermal conductivity of the material of the pre-molded chip housing and/or a temperature stability greater than a temperature stability of the pre-molded chip housing.

Abstract: A power device includes an active area having at least two switchable regions with different threshold voltages.

Abstract: A semiconductor device includes a semiconductor region having charge carriers of a first conductivity type, a transistor cell in the semiconductor region, and a semiconductor channel region in the transistor cell and having a first doping concentration of charge carriers of a second conductivity type. A semiconductor auxiliary region in the semiconductor region has a second doping concentration of charge carriers of the second conductivity type, which is at least 30% higher than the first doping concentration. A pn-junction between the semiconductor auxiliary region and the semiconductor region is positioned as deep or deeper in the semiconductor region as a pn-junction between the semiconductor channel region and the semiconductor region. The semiconductor auxiliary region is positioned closer to the semiconductor channel region than any other semiconductor region having charge carriers of the second conductivity type and that forms a further pn-junction with the semiconductor region.

Abstract: A semiconductor device includes a first load terminal at a first surface of a semiconductor body and a second load terminal at the opposing surface. An active device area is surrounded by an edge termination area. Load terminal contacts are absent in the edge termination area and are electrically connected to the semiconductor body in the active device area at the first surface. A positive temperature coefficient structure is between at least one of the first and second load terminals and a corresponding one of the first and second surfaces. Above a maximum operation temperature specified for the semiconductor device, a specific resistance of the positive temperature coefficient structure increases by at least two orders of magnitude within a temperature range of at most 50 K. A degree of area coverage of the positive temperature coefficient structure is greater in the edge termination area than in the active device area.

Abstract: An embodiment of an IGBT comprises an emitter terminal at a first surface of a semiconductor body. The IGBT further comprises a collector terminal at a second surface of the semiconductor body. A first zone of a first conductivity type is in the semiconductor body between the first and second surfaces. A collector injection structure adjoins the second surface, the collector injection structure being of a second conductivity type and comprising a first part and a second part at a first lateral distance from each other. The IGBT further comprises a negative temperature coefficient thermistor adjoining the first zone in an area between the first and second parts.

Abstract: A method for operating an electrical power rectifier. The power rectifier comprises at least two branches that are connected in parallel to each other, each of the branches comprising at least two power semiconductor elements that are connected in series. The collector-emitter voltage Vce(t) and/or the collector current Ic(t) of one of the power semiconductor elements is detected by means of the method. Furthermore, it is determined whether at least one of the following conditions is met: dVce(t)/dt<(dVce/dt)crit, and/or dIc(t)/dt<(dIc/dt)crit, and or Ic(t_ent)<Iccrit. If at least one of the aforementioned conditions has been met, the gate-emitter voltage of at least one of the power semiconductor elements is increased.

Abstract: A semiconductor component includes a two-sided semiconductor body, an inner zone with a basic doping of a first conduction type, and two semiconductor zones. The first zone, disposed between the first side and inner zone, is of the first conduction type with a doping concentration higher than that of the inner zone. The second zone, disposed between the second side and inner zone, is of a second conduction type complementary to the first type with a doping concentration higher than that of the inner zone. At least one first edge chamfer extends at a first angle to the extension plane of the transition from the second zone to the inner zone at least along the edge of the second zone and inner zone. At least one buried zone of the second conduction type is provided between the first zone and inner zone, and extends substantially parallel to the first zone.

Abstract: A semiconductor component includes a two-sided semiconductor body, an inner zone with a basic doping of a first conduction type, and two semiconductor zones. The first zone, disposed between the first side and inner zone, is of the first conduction type with a doping concentration higher than that of the inner zone. The second zone, disposed between the second side and inner zone, is of a second conduction type complementary to the first type with a doping concentration higher than that of the inner zone. At least one first edge chamfer extends at a first angle to the extension plane of the transition from the second zone to the inner zone at least along the edge of the second zone and inner zone. At least one buried zone of the second conduction type is provided between the first zone and inner zone, and extends substantially parallel to the first zone.

Abstract: A method for operating an electrical power rectifier. The power rectifier comprises at least two branches that are connected in parallel to each other, each of the branches comprising at least two power semiconductor elements that are connected in series. The collector-emitter voltage Vce(t) and/or the collector current Ic(t) of one of the power semiconductor elements is detected by means of the method. Furthermore, it is determined whether at least one of the following conditions is met: dVce(t)/dt<(dVce/dt)crit, and/or dIc(t)/dt<(dIc/dt)crit, and or Ic(t13 ent)<Iccrit. If at least one of the aforementioned conditions has been met, the gate-emitter voltage of at least one of the power semiconductor elements is increased.

Abstract: A holder system for fastening an aircraft interior component to a transporting apparatus and to an aircraft structure includes an interior component holder configured to be connected to the interior component and which has a fastening device for fastening the interior component holder to the transporting apparatus. A structure holder is configured to be connected to the aircraft structure. A connecting element is fastened to the interior component holder and is configured to be connected to the structure holder in order to fasten the interior component to the aircraft structure.

Abstract: A holder for fastening an interior component, intended for mounting in an aircraft, to a transporting apparatus, includes an interface element configured to be connected to the transporting apparatus for the purpose of fastening the holder to the transporting apparatus. A bearing element is connected to the interface element and has a fixed bearing for bearing a first interior component holder connected to the interior component and a movable bearing for bearing a second interior component holder connected to the interior component.

Abstract: A holder system for fastening an aircraft interior component to a transporting apparatus and to an aircraft structure includes an interior component holder configured to be connected to the interior component and which has a fastening device for fastening the interior component holder to the transporting apparatus. A structure holder is configured to be connected to the aircraft structure. A connecting element is fastened to the interior component holder and is configured to be connected to the structure holder in order to fasten the interior component to the aircraft structure.

Abstract: A holder for fastening an interior component, intended for mounting in an aircraft, to a transporting apparatus, includes an interface element configured to be connected to the transporting apparatus for the purpose of fastening the holder to the transporting apparatus. A bearing element is connected to the interface element and has a fixed bearing for bearing a first interior component holder connected to the interior component and a movable bearing for bearing a second interior component holder connected to the interior component.