Abstract: A memory device comprising: a back gate including a first portion of electrically conductive material, a first portion of dielectric material arranged on the back gate, a semiconductor nanobeam arranged on the first portion of dielectric material, a second portion of dielectric material covering the semiconductor nanobeam, a portion of material capable of receiving electrons and holes, and able to perform storage of electrical charges and covering the second portion of dielectric material, a third portion of dielectric material covering the portion of material capable of performing storage of electrical charges, a front gate including a second portion of electrically conductive material covering the third portion of dielectric material.

Abstract: A microelectronic method for the fabrication of a transistor gate using a precursor material that is suitable for being broken down into at least one metallic material after having been exposed to an electron beam. The invention applies in particular to the fabrication of multi-channel transistors, of the FinFET, suspended-channel, ITS or GAA type.

Abstract: The present invention relates to a process for continuously preparing diaryl carbonates from dialkyl carbonates and at least one monohydroxyl compound in the presence of catalysts, and to the use thereof for preparation of polycarbonates. The alkylene glycol obtained in the preparation of the dialkyl carbonate used is recycled by oxidative carbonylation with carbon monoxide in the presence of a catalyst to give the cyclic alkylene carbonate which is in turn converted to the dialkyl carbonate. More particularly, the process utilizes the alkylene glycol obtained for the diphenyl carbonate preparation process (DPC process).

Abstract: An endoscopic instrument with a hollow shank which on the proximal side is provided with a connection part with at least one suction connection and/or rinsing connection, with a coupling part for fixing a working insert. The coupling part is mounted rotatably with respect to the connection part and the coupling part is detachably connected to the connection part. The endoscopic instrument further includes an annular axial seal which is arranged between the connection part and the coupling part.

Abstract: Electrodes made from metallic material are formed on a layer of dielectric material. A bottom layer of at least one of the electrodes constitutes a catalyst material in direct contact with the layer of dielectric material. Nanowires are grown by means of the catalyst, between the electrodes, parallel to the layer of dielectric material. The nanowires connecting the two electrodes are then made from single-crystal semi-conductor material and in contact with the layer of dielectric material.

Abstract: A method for fabricating a microelectronic device comprising: a support, an etched stack of thin layers comprising: at least one first block and at least one second block resting on the support, in which at least one drain region and at least one source region, respectively, are capable of being formed, several semiconductor bars connecting a first zone of the first block and another zone of the second block, and able to form a multi-branch transistor channel, or several transistor channels, the device also comprising: a gate surrounding said bars and located between said first block and said second block, the gate being in contact with a first and a second insulating spacer in contact with at least one sidewall of the first block and with at least one sidewall of the second block, respectively, and at least partially separated from the first block and the second block, via said insulating spacers.

Abstract: A brake device arrangement and auxiliary device arrangement of a pneumatic brake system of a vehicle include a pneumatic control valve and other pneumatic components for carrying out braking functions or auxiliary braking functions of the braking system. In order to produce a modular construction, a brake control module, which is pre-mounted on a support for producing a braking pressure, is arranged adjacent to a filter module, for treating the air on the input side, and at least one auxiliary module for fulfilling the auxiliary braking functions.

Abstract: A method for monitoring wear of a blade pitch brake within a rotor blade pitch control system of a wind turbine is described. The rotor blade pitch control system includes a blade pitch actuator. The method includes engaging the blade pitch brake and measuring a blade pitch displacement while the blade pitch brake is engaged. The method further includes determining a brake wear level based on the measured blade pitch displacement while the blade pitch brake is engaged, and generating a brake wear level output signal corresponding to the brake wear level.

Abstract: A microelectronic flash memory device including a plurality of memory cells including transistors fitted with a matrix of channels connecting a block of common source to a second block on which bit lines rest, the transistors also being formed by a plurality of gates including at least one gate material, including a first selection gate coating the channels, a plurality of control gates coating the channels, a plurality of second selection gates each coating the channels of the same row and the matricial arrangement, at least one or more of the gates based on superposition of layers including at least one first layer of dielectrical material, at least one charge store zone, and at least one second layer of dielectrical material.

Abstract: A method for monitoring wear of a blade pitch brake within a rotor blade pitch control system of a wind turbine is described. The rotor blade pitch control system includes a blade pitch actuator. The method includes engaging the blade pitch brake and measuring a blade pitch displacement while the blade pitch brake is engaged. The method further includes determining a brake wear level based on the measured blade pitch displacement while the blade pitch brake is engaged, and generating a brake wear level output signal corresponding to the brake wear level.

Abstract: A system is disclosed for monitoring and controlling the deflection of turbine blades of a wind turbine. The system includes a passive position detecting apparatus and a controller. The passive position detecting apparatus may be configured to acquire and transmit data relating directly to a position of at least one of the turbine blades. The controller may be configured to receive the data from the passive position detecting apparatus and compare such data to a known position reference to determine turbine blade deflection.

Abstract: The disclosure concerns a microelectronic device provided with one or more <<quantum wires>>, able to form one or more transistor channels, and optimized in terms of arrangement, shape or/and composition. The invention also uses a method for fabricating said device, comprising the steps of: the forming, in one or more thin layers resting on a support, of a first block and a second block in which at least one transistor drain region and at least one transistor source region are respectively intended to be formed, and of a structure connecting the first block to the second block, and the forming, on the surface of the structure, of wires connecting a first region of the first block with another region of the second block which faces the first region.

Abstract: Method of fabricating an electro-mechanical microsystem provided with at least one fixed part comprising a bar, and at least one mobile part in rotation around at least one portion of said bar, the method comprising the steps of: a) formation, inside a layer of at least one given material resting on a support, of at least one bar, b) formation around the bar of at least one first graphene sheet, and of a least one second graphene sheet, separated from the first sheet and mobile with respect to the first sheet.

Abstract: A microelectronic device provided with one or more quantum wires, able to form one or more transistor channels, and optimized in terms of arrangement, shape, and/or composition. A method for fabricating the device includes forming, in one or more thin layers resting on a support, a first block and a second block in which at least one transistor drain region and at least one transistor source region are respectively intended to be formed, forming a structure connecting the first block to the second block, and forming, on the surface of the structure, wires connecting a first region of the first block with another region of the second block that faces the first region.

Abstract: The invention relates to a field-effect microelectronic device, as well as the method of production thereof. The device includes a substrate as well as at least one improved structure capable of forming one or more transistor channels. This structure, formed by a plurality of bars stacked on the substrate, can make it possible to save space in the integration of field-effect transistors as well as to improve the performance thereof.

Abstract: Techniques for providing network services at an audio interface unit include determining, based on spoken sounds of a user of an apparatus received at a microphone of the apparatus, whether to present audio data received from a different apparatus. If it is determined to present the received audio data, then presentation of the received audio data at a speaker of the apparatus is initiated. In some embodiments, an apparatus includes a data communications bus; and logic encoded in one or more tangible media configured to performs the above steps. In some embodiments, the apparatus does not include a visual display and does not include a keypad of multiple buttons.

Abstract: Techniques for providing network services at an audio interface unit includes receiving first data and second data. The first data indicates a first set of one or more contents for presentation to a user. The second data indicates a second set of zero or more contents for presentation to the user. An audio stream is generated based on the first data and the second data. Presentation is initiated of the audio stream at a speaker in an audio device of the user.

Abstract: A microstructure of the semiconductor on insulator type with different patterns is produced by forming a stacked uniform structure including a plate forming a substrate, a continuous insulative layer and a semiconductor layer. The continuous insulative layer is a stack of at least three elementary layers, including a bottom elementary layer, at least one intermediate elementary layer, and a top elementary layer overlying the semiconductor layer, where at least one of the bottom elementary layer and the top elementary layer being of an insulative material. In the stacked uniform structure, at least two patterns are differentiated by modifying at least one of the elementary layers in one of the patterns so that the elementary layer has a significantly different physical or chemical property between the two patterns, where at least one of the bottom and top elementary layer is an insulative material that remains unchanged.

Abstract: Electrodes made from metallic material are formed on a layer of dielectric material. A bottom layer of at least one of the electrodes constitutes a catalyst material in direct contact with the layer of dielectric material. Nanowires are grown by means of the catalyst, between the electrodes, parallel to the layer of dielectric material. The nanowires connecting the two electrodes are then made from single-crystal semi-conductor material and in contact with the layer of dielectric material.

Abstract: The invention concerns a micro-electronic device comprising a substrate, a first insulating zone and a second insulating zone laying on said substrate, a first active zone comprising at least one layer made of a first semi-conductor crystalline material, resting on said first insulating zone which insulates it from the substrate, at least one second active zone comprising at least one layer in a second semi-conductor crystalline material, laying on said second insulating zone which insulates it from the substrate, said first semi-conductor crystalline material having a different composition from that of the second semi-conductor crystalline material and/or different crystalline orientation from that of the second semi-conductor crystalline material and/or mechanical strains from that of the second semi-conductor crystalline material.