Abstract: A microelectronic device including, on a substrate, at least one element such as a SRAM memory cell; one or more first transistor(s), respectively including a number k of channels (k?1) parallel in a direction forming a non-zero angle with the main plane of the substrate, and one or more second transistor(s), respectively including a number m of channels, such that m>k, parallel in a direction forming a non-zero angle, or an orthogonal direction, with the main plane of the substrate.

Abstract: The disclosure concerns a method, an apparatus and a system for producing or equipping paperboard such that information carriers can be implanted between two layers of material, together with a piece of paperboard material produced in this way and a package. In particular, the disclosure concerns the implantation of an information carrier in corrugated paperboard, taking into account cuts that are subsequently to be made in the transverse direction, the distance of the position at which the cross-cuts are made from the position at which the information carriers are applied, and the movement executed by the web of material between the application position and the cross-cutting position.

Abstract: The invention concerns a sensor device, of nanowire type, comprising at least one nanowire comprising a first conductive region (2) and a second region (4) in insulator material, this second region not occupying the entire thickness of the nanowire, and a current being able to circulate in the nanowire from one of its ends to the other.

Abstract: A microstructure of the semiconductor on insulator type with different patterns is produced by forming a stacked uniform structure including a plate forming a substrate, a continuous insulative layer and a semiconductor layer. The continuous insulative layer is a stack of at least three elementary layers, including a bottom elementary layer, at least one intermediate elementary layer, and a top elementary layer overlying the semiconductor layer, where at least one of the bottom elementary layer and the top elementary layer being of an insulative material. In the stacked uniform structure, at least two patterns are differentiated by modifying at least one of the elementary layers in one of the patterns so that the elementary layer has a significantly different physical or chemical property between the two patterns, where at least one of the bottom and top elementary layer is an insulative material that remains unchanged.

Abstract: A microelectronic method for the fabrication of a transistor gate using a precursor material that is suitable for being broken down into at least one metallic material after having been exposed to an electron beam. The invention applies in particular to the fabrication of multi-channel transistors, of the FinFET, suspended-channel, ITS or GAA type.

Abstract: The invention relates to a field-effect microelectronic device, as well as the method of production thereof. The device includes a substrate as well as at least one improved structure capable of forming one or more transistor channels. This structure, formed by a plurality of bars stacked on the substrate, can make it possible to save space in the integration of field-effect transistors as well as to improve the performance thereof.

Abstract: A method of manufacturing at least one nanowire, the nanowire being parallel to its supporting substrate, the method comprising: the formation on the supporting substrate of a structure comprising a bar and two regions, a first end of the bar being secured to one of the two regions and a second end of the bar being secured to the other region, the width of the bar being less than the width of the regions, the subjection of the bar to an annealing under gaseous atmosphere in order to transform the bar into a nanowire, the annealing being carried out under conditions allowing control of the sizing of the neck produced during the formation of the nanowire.

Abstract: The invention relates to a field-effect microelectronic device, and the production method thereof. Said device comprises a substrate (700) and at least one improved structure (702), capable of forming one or several transistor channels. Said structure, composed of several bars stacked on the substrate, may allow space saving in the integration of field-effect transistors and the performances thereof to be improved.

Abstract: Double gate transistor microelectronic device comprising: a support, a structure suited to forming at least one multi-branch channel and comprising a plurality of separate parallel semi-conductor rods and situated in a plane orthogonal to the principal plane of the support, the rods linking a first block suited to forming a source region of the transistor and a second block provided, suited to forming a drain region of the transistor, a first gate electrode situated on one side of said structure against the sides of said semi-conductor rods, a second gate electrode, separate from the first gate and situated on another side of the structure against the opposite sides of the rods, the semi-conductor rods and one or several insulating rods situated between the semi-conductor rods, separating the first gate electrode and the second gate electrode.

Abstract: A method for fabricating a microelectronic device including a support, an etched stack of thin layers including at least one first block and at least one second block resting on the support, in which at least one drain region and at least one source region, respectively, are capable of being formed, plural semiconductor bars connecting a first zone of the first block and another zone of the second block, and able to form a multi-branch transistor channel, or plural transistor channels. A gate surrounds the bars and is located between the first block and the second block, the gate being in contact with a first and second insulating spacer in contact with at least one sidewall of the first block and with at least one sidewall of the second block, respectively, and at least partially separated from the first block and the second block, via the insulating spacers.

Abstract: A microelectronic device provided with one or more quantum wires, able to form one or more transistor channels, and optimized in terms of arrangement, shape, and/or composition. A method for fabricating the device includes forming, in one or more thin layers resting on a support, a first block and a second block in which at least one transistor drain region and at least one transistor source region are respectively intended to be formed, forming a structure connecting the first block to the second block, and forming, on the surface of the structure, wires connecting a first region of the first block with another region of the second block that faces the first region.

Abstract: Current MRI technologies require subjects to remain largely motionless for achieving high quality magnetic resonance (MR) scans, typically for 5-10 minutes at a time. However, lying absolutely still inside the tight MR imager (MRI) tunnel is a difficult task, especially for children, very sick patients, or the mentally ill. Even motion ranging less than 1 mm or 1 degree can corrupt a scan. This invention involves a system that adaptively compensates for subject motion in real-time. An object orientation marker, preferably a retro-grate reflector (RGR), is placed on a patients' head or other body organ of interest during MRI. The RGR makes it possible to measure the six degrees of freedom (x, y, and z-translations, and pitch, yaw, and roll), or “pose”, required to track the organ of interest. A camera-based tracking system observes the marker and continuously extracts its pose.

Abstract: The invention concerns a micro-electronic device comprising a substrate, a first insulating zone and a second insulating zone laying on said substrate, a first active zone comprising at least one layer made of a first semi-conductor crystalline material, resting on said first insulating zone which insulates it from the substrate, at least one second active zone comprising at least one layer in a second semi-conductor crystalline material, laying on said second insulating zone which insulates it from the substrate, said first semi-conductor crystalline material having a different composition from that of the second semi-conductor crystalline material and/or different crystalline orientation from that of the second semi-conductor crystalline material and/or mechanical strains from that of the second semi-conductor crystalline material.

Abstract: The disclosure concerns a method, an apparatus and a system for producing or equipping paperboard such that information carriers can be implanted between two layers of material, together with a piece of paperboard material produced in this way and a package. In particular, the disclosure concerns the implantation of an information carrier in corrugated paperboard, taking into account cuts that are subsequently to be made in the transverse direction, the distance of the position at which the cross-cuts are made from the position at which the information carriers are applied, and the movement executed by the web of material between the application position and the cross-cutting position.

Abstract: The invention relates to a field-effect microelectronic device, as well as the method of production thereof. The device includes a substrate (700) as well as at least one improved structure (702) capable of forming one or more transistor channels. This structure, formed by a plurality of bars stacked on the substrate, can make it possible to save space in the integration of field-effect transistors as well as to improve the performance thereof.

Abstract: The invention relates to a method for straining or deforming a pattern or a thin layer (24), starting from an initial component comprising the said thin layer and a prestressed layer (20), this method comprising: an etching step of the prestressed layer, perpendicular to its surface.

Abstract: An endoscopic instrument with a hollow shank which on the proximal side is provided with a connection part with at least one suction connection and/or rinsing connection, with a coupling part for fixing a working insert. The coupling part is mounted rotatably with respect to the connection part. The endoscopic instrument furthermore includes means for the detachable connection of the coupling part and the connection part, as well as an annular axial seal which is arranged between the connection part and the coupling part.

Abstract: An endoscopic instrument, having a shank (2) envisaged for introduction into a body opening (8), has on its outer surface raised parts (10) lying at the corner points of a polygon, so that an essentially linear contact is formed between the shank (2) and the body.

Abstract: A device and method for guiding a transversely stable material web. The device contains at least one roller and one counter roller disposed on opposite sides of the material web. The roller and counter roller can be swiveled synchronously with each other, thereby holding the material web between each other with a clamping grip. This device provides a substantially higher guiding force in relation to the running direction of the web than devices with stationary abutments.

Abstract: A circuit arrangement for controlling access to a common memory by two or more processors, one of which is privileged, accelerates and simplifies the execution of the accesses by provision for each processor of its own address register and its own data register. As a result, a processor can process the data read during an access while the next access to the memory is already being carried out for another processor. In the case of write operations, the waiting times are reduced, notably for the non-privileged processors when a write operation is interrupted by a privileged processor, because the data to be written can then be transferred directly to the associated data register.