Abstract: According to various embodiments, a method for manufacturing a semiconductor device may include providing a semiconductor workpiece including a device region at a first side of the semiconductor workpiece, wherein a mechanical stability of the semiconductor workpiece is insufficient to resist at least one back end process without damage, and depositing at least one conductive layer over a second side of the semiconductor workpiece opposite the first side of the semiconductor workpiece, wherein the at least one conductive layer increases the mechanical stability of the semiconductor workpiece to be sufficient to resist the at least one back end process without damage.

Abstract: A photo book includes a cover and a structural unit integrated with the cover. The structural unit includes an electronic memory element and a connection element connected to the memory element. The cover includes a body element and a flexible sheath surrounding the body element. The body element has a peripheral edge and a through passage that opens out along the peripheral edge of the body element. The structural unit is insertable into the through-passage so that the connection element opens out along a peripheral edge of the cover.

Abstract: An etching device is provided, the etching device including a process chamber including an etchant, a structure configured to provide a laminar flow of the etchant, and a workpiece handler configured to move a workpiece through the laminar flow of the etchant along a predefined track.

Abstract: A protective cover for an article of footwear can include a first portion covering the top and sides of the footwear and a second portion covering the back of the footwear. The first portion can include locations to receive at least part of a connecting mechanism, and the second portion of the cover can be connected to the first portion of the cover by the connecting mechanism.

Abstract: A method for processing a semiconductor workpiece is provided, which may include: providing a semiconductor workpiece including a metallization layer stack disposed at a side of the semiconductor workpiece, the metallization layer stack including at least a first layer and a second layer disposed over the first layer, wherein the first layer contains a first material and the second layer contains a second material that is different from the first material; patterning the metallization layer stack, wherein patterning the metallization layer stack includes wet etching the first layer and the second layer by means of an etching solution that has at least substantially the same etching rate for the first material and the second material.

Abstract: According to various embodiments, a method for manufacturing a semiconductor device may include providing a semiconductor workpiece including a device region at a first side of the semiconductor workpiece, wherein a mechanical stability of the semiconductor workpiece is insufficient to resist at least one back end process without damage, and depositing at least one conductive layer over a second side of the semiconductor workpiece opposite the first side of the semiconductor workpiece, wherein the at least one conductive layer increases the mechanical stability of the semiconductor workpiece to be sufficient to resist the at least one back end process without damage.

Abstract: A device for processing wafer-shaped articles comprises a closed process chamber that provides a gas-tight enclosure. A rotary chuck is located within the closed process chamber. A heater is positioned relative to the chuck so as to heat a wafer shaped article held on the chuck from one side only and without contacting the wafer shaped article. The heater emits radiation having a maximum intensity in a wavelength range from 390 nm to 550 nm. At least one first liquid dispenser is positioned relative to the chuck so as to dispense a process liquid onto a side of a wafer shaped article that is opposite the side of the wafer-shaped article facing the heater.

Abstract: A soldering iron includes a soldering tip which is adapted to be heated by means of a laser beam traveling at least partially along a laser path in the soldering iron. The soldering iron further includes an energy converter provided for absorbing the laser beam and coupled to the soldering tip for heating the same.

Abstract: A method for manufacturing an electronic device and an electronic device are disclosed. In an embodiment the method comprises forming an opening in an isolation layer, isotropically etching the opening thereby forming an extended opening with curved sidewalls, and forming a conductive material in the opening.

Abstract: A method for producing an electronic assembly in which an electronic component supported on a wiring support is encapsulated with an encapsulation material, the method including: -arranging the electronic component on the wiring support in such a manner that a stress applied onto the electronic component by the encapsulation material falls below a predetermined value; and -encapsulating the electronic component with the encapsulation material.

Abstract: An arrangement is provided. The arrangement may include: a die including at least one electronic component and a first terminal on a first side of the die and a second terminal on a second side of the die opposite the first side, wherein the first side being the main processing side of the die, and the die further including at least a third terminal on the second side; a first electrically conductive structure providing current flow from the third terminal on second side of the die to the first side through the die; a second electrically conductive structure on the first side of the die laterally coupling the second terminal with the first electrically conductive structure; and an encapsulation material disposed at least over the first side of the die covering the first terminal and the second electrically conductive structure.

Abstract: A method for manufacturing an electronic device and an electronic device are disclosed. In an embodiment the method comprises forming an opening in an isolation layer, isotropically etching the opening thereby forming an extended opening with curved sidewalls, and forming a conductive material in the opening.

Abstract: The present invention relates to an abutment (10, 100), comprising: a ceramic part (12, 112); and a metal adapter (14, 114) removably attachable to the ceramic part, wherein the metal adapter has a conical connection interface (16) for attachment to a dental implant (18). The present invention also relates to a method of attaching an abutment (10) to a dental implant (18).

Abstract: The invention relates to a method for producing aqueous polyurethane-polyurea dispersions, where A) first a polyurethane prepolymer containing NCO groups is produced by reacting A1) polyisocyanates with A2) polymeric polyols and/or polyamines having number-average molecular weights of more than 400 to 8,000 g/mol, A3) possibly low-molecular-weight compounds having number-average molecular weights of 17-400 g/mol selected from the group comprising mono- and polyalcohols, mono- and polyamines, and amino alcohols, A4) isocyanate-reactive, ionically or potentially ionically hydrophilic compounds and/or isocyanate-reactive non-ionically hydrophilic compounds, A5) isocyanate-reactive compounds, which contain at least one C7 to C24 alkyl group or C7 to C24 alkenyl group, and A6) isocyanate-reactive compounds, which contain at least one polysiloxane group, and B); the NCO groups of the prepolymer that are not yet free are reacted with isocyanate-reactive monoamines, polyamines, hydrazine, and/or hydrazides, dimension

Abstract: A hearing aid device has an antenna device. The antenna device is configured to receive and/or transmit electromagnetic waves of a predetermined wavelength lambda. The antenna device has an energy coupling device which is configured to supply or to draw electrical energy to or from the antenna device. The antenna device has a first conductor and a second conductor, which are in energy exchange with the energy coupling device, extend away from the energy coupling device in different directions and are arranged a short distance from a third conductor. A first ohmic connection between the first conductor and the third conductor and a second ohmic connection between the second conductor and the third conductor are arranged at a predefined distance from the energy coupling device.

Abstract: A method for processing a semiconductor workpiece is provided, which may include: providing a semiconductor workpiece including a metallization layer stack disposed at a side of the semiconductor workpiece, the metallization layer stack including at least a first layer and a second layer disposed over the first layer, wherein the first layer contains a first material and the second layer contains a second material that is different from the first material; patterning the metallization layer stack, wherein patterning the metallization layer stack includes wet etching the first layer and the second layer by means of an etching solution that has at least substantially the same etching rate for the first material and the second material.

Abstract: A hearing aid includes a hearing aid housing and an antenna device constructed to receive and/or transmit electromagnetic waves having a predetermined wavelength lambda. The antenna device has a frame incorporated in the hearing aid housing for holding assemblies of the hearing aid and the frame has an electrically conductive structure being an integral part of the frame. A method for producing a hearing aid includes patterning a surface of the frame, applying an electrically conductive layer to the surface of the frame and incorporating the frame into the hearing aid housing.

Abstract: An arrangement is provided. The arrangement may include: a substrate having a front side and a back side, a die region within the substrate, a multi-purpose layer defining a back side of the die region, and an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate. The multi-purpose layer may be formed of an ohmic material, and the etch stop layer may be of a first conductivity type of a first doping concentration.

Abstract: A method for processing a semiconductor workpiece is provided, which may include: providing a semiconductor workpiece including a metallization layer stack disposed at a side of the semiconductor workpiece, the metallization layer stack including at least a first layer and a second layer disposed over the first layer, wherein the first layer contains a first material and the second layer contains a second material that is different from the first material; patterning the metallization layer stack, wherein patterning the metallization layer stack includes wet etching the first layer and the second layer by means of an etching solution that has at least substantially the same etching rate for the first material and the second material.

Abstract: The present invention relates to a method of specifically releasing a one or more members of a sub-group of objects from an entity, a method of detecting a subject's disease by detecting one or more members of a sub-group of biological entities indicative of the disease and a method of isolating one or more members of a sub-group of objects from a group of objects.