Abstract: Method for computer-aided creation of a clock tree structure file for a semiconductor circuit, which has a plurality of synchronously driven switching elements and a plurality of signal connections. A first reference switching element is selected from the plurality of synchronously driven switching elements. A first reference arrival time of a clock signal is defined for the first reference switching element. A clock signal arrival interval is determined for at least one switching element from the plurality of synchronously driven switching elements, which is coupled to the first reference switching element via at least one of the plurality of signal connections. An arrival time of a clock signal for the at least one switching element within the clock signal arrival interval, whose value is not the same as the first reference arrival time, is defined. The first reference arrival time and the defined arrival time are stored in the clock tree structure file.

Abstract: It is the object of the invention to provide a method for the determination of characteristic layer parameters by means of spectral-optical measurements, that allow for precise measurements of the sample temperature even under the conditions of industrial growth processes, i.e. wobbling samples and/or fast changes between sample carrier and sample and furthermore avoids the detection of thermal radiation and reflected radiation by means of twofold phase sensitive frequency modulation by using so called chopper and lock-in amplifier respectively several pyrometer.

Abstract: The invention relates to a method for measuring characteristics, especially the temperature of a multi-layer material during the build-up of the layers, especially of a stratified semiconductor system during epitaxy under constant process conditions.

Abstract: The ink jet print head is formed with many parallel ducts, which are etched isotropically through openings in a first layer located above the ducts. After the etching operation, the openings of the first layer are closed by the deposition onto the first layer of a second layer, which covers the openings. The openings have a diameter of 1 &mgr;m, for instance. The openings, formed in the first layer by photolithography and ensuing dry etching, are disposed such that in an etching operation, the desired ducts underneath the first layer are laid bare. It is thus not necessary to adjust the relative positioning of two or more etched plates, closed ducts are formed without bonding or adhesive techniques, and the trigger circuit and the print head can be integrated on a single substrate.

Abstract: A method and a device for testing an integrated circuit are defined by the fact that the testing of the integrated circuit is begun by a self-test device contained in the integrated circuit before the integrated circuit is connected to an external testing device that reads out and/or evaluates the results of the self test. The integrated circuit and the wafer are constructed in such a way that this is readily possible with little outlay. An integrated circuit that includes the self-test device and a wafer including such integrated circuits is also disclosed.

Abstract: A drive circuit for a non-volatile semiconductor storage configuration. The drive circuit having a level converter circuit which applies an output value and a complementary output value complementary to the output value to a bit line and/or a word line of the semiconductor storage configuration. The drive circuit also has a latch circuit that temporarily stores the data to be stored in the semiconductor storage configuration, and lies between an input circuit and the level converter circuit.

Abstract: A semiconductor storage device with a multiplicity of storage cells arranged on a semiconductor substrate for programmable storage of data contents. The semiconductor storage device can be operated in at least two operating states of which the first is assigned to erasing the data content from a storage cell and the second is assigned to maintaining a data content of a storage cell. The semiconductor storage device further operates with a selection circuit for selecting an associated group of storage cells for selective application of an erase voltage and a reference voltage to the selected group of storage cells. For driving the group of storage cells which is selected by the selection circuit, for the operating states of erasing and maintaining the data content of the storage cells, a drive circuit is provided.

Abstract: A data memory has at least one memory location field with memory locations and a redundancy circuit that has at least one redundancy memory location is further provided. A redundancy selection line selector module that has at least one assignment memory in which an item of assignment information can be stored is also provided to the data memory. It being possible for at least one redundancy memory location to be assigned to at least one memory location on the basis of the assignment information. The assignment memory has an assignment memory location with a buffer for the purpose of holding the assignment information. In the known data memories, relatively long programming times are required when assigning redundancy memory locations to memory locations, depending on the programming method used. In the data memories according to the invention, the assignment information can be transferred from the buffer into the assignment memory location.

Abstract: The ink jet print head is formed with many parallel ducts, which are etched isotropically through openings in a first layer located above the ducts. After the etching operation, the openings of the first layer are closed by the deposition onto the first layer of a second layer, which covers the openings. The openings have a diameter of 1 .mu.m, for instance. The openings, formed in the first layer by photolithography and ensuing dry etching, are disposed such that in an etching operation, the desired ducts underneath the first layer are laid bare. It is thus not necessary to adjust the relative positioning of two or more etched plates, closed ducts are formed without bonding or adhesive techniques, and the trigger circuit and the print head can be integrated on a single substrate.

Abstract: The invention relates to a semiconductor storage device with a large number of storage cells (3), arranged on a semiconductor substrate at intersections of bit lines and word lines, which, for programming with data contents, can be driven by means of a word-line drive circuit (4) and a bit-line drive circuit (5). Enable storage cells (12, 14), arranged along an enable bit line (9, 10, 13) and driveable by means of an enable bit-line drive circuit (11) which is arranged and can be driven separately and independently of the bit-line drive circuit (5), are assigned to the storage cells (3) of a word line and can have an enable value applied to them in order to enable the storage cells (3) of a predetermined word line.

Abstract: A circuit configuration for a programmable nonvolatile memory having memory cells organized in rows and columns, includes a programming circuit which contains a first device for testing purposes that applies a programming current to a first predetermined number of memory cells in parallel for a first predetermined time period. During a second predetermined time period, the device thereupon connects a second predetermined number, which is greater than the first number, in parallel an applies the programming current to them. A method is provided for operating the circuit configuration.

Abstract: A constant-current source includes a MOSFET having a drain electrode connected to a first terminal of the current source and a source electrode and a control gate electrode connected to a second terminal of the current source. A floating gate having a charge of the opposite charge-carrier type to the channel type of the FET is disposed between the control gate and the channel of the FET.

Abstract: A micromechanical component includes a fixed micromechanical structure having a pair of capacitor plates being formed of one or more conductive layers, and a movable micromechanical structure being formed of a dielectric layer to be introduced into or removed from an interstice between the plates. A capacitance change is obtained through the resilient or freely movable dielectric, so that the component can be inserted as a proportional or a non-proportional force sensor. A microsystem with an integrated circuit and a micromechanical component with a movable dielectric, as well as a production method for the component and the microsystem, are also provided.

Abstract: A micromechanical component includes a fixed micromechanical structure having at least two electrodes being formed of one or more conductive layers, and a movable micromechanical structure in a void or chamber forming a conductive switch element, for making an electrical contact between the electrodes with the aid of the switch element. The void or chamber can have a, for example, grid-shaped device for securing the switch element against falling out and/or a seal at the top. A microsystem with an integrated circuit and the micromechanical component, as well as a production process for the component and the microsystem, are also provided. The component and the circuit can therefore be produced simultaneously in a very simple manner.

Abstract: A microsystem on a semiconductor substrate includes an integrated circuit having an insulating layer, a contact in the insulating layer, a lower-lying circuit element, and a conductive layer being disposed above the insulating layer and being connected through the contact to the lower-lying circuit element. A micromechanical component has a fixed micromechanical structure, a movable micromechanical structure, a further contact, and is at least partially formed of the conductive layer. The insulating layer and/or the further contact connects the fixed micromechanical structure to the substrate. The insulating layer is absent under the movable micromechanical structure.

Abstract: A micromechanical component includes a fixed micromechanical structure having a pair of capacitor plates being formed of one or more conductive layers, and a movable micromechanical structure being formed of a dielectric layer to be introduced into or removed from an interstice between the plates. A capacitance change is obtained through the resilient or freely movable dielectric, so that the component can be inserted as a proportional or a non-proportional force sensor. A microsystem with an integrated circuit and a micromechanical component with a movable dielectric, as well as a production method for the component and the microsystem, are also provided.

Abstract: A micromechanical component, for example a motor, wherein micromechanical structures such as a rotor, rotational axle, and stator, are manufactured of the same layer or multiple layer of, for example, CVD tungsten deposited in corresponding trenches. As a result thereof, no alignment problems arise. The static micromechanical structures are connected to the underlying substrate with electrical and/or mechanical connecting means, whereby retaining the movable micromechanical structure to a substrate can be simultaneously achieved. The manufacturing process is compatible with the production of integrated circuits on silicon and requires only three photolevels.

Abstract: An insulating layer wherein contact holes to regions to be contacted are opened is applied surface-wide onto a substrate. For producing an interconnect mask, a photoresist layer is applied, exposed and developed such that the surface of the regions to be contacted remains covered with photoresist in exposed regions, whereas the surface of the insulating layer is uncovered in the exposed regions. Using the interconnect mask as etching mask, trenches are etched into the insulating layer. Contacts and interconnects of a metallization level are finished by filling the contact holes and the trenches with metal.