Abstract: A semiconductor device includes a transistor in a semiconductor substrate having a main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, a gate electrode, and a gate dielectric adjacent to the gate electrode. The gate electrode is disposed adjacent to at least two sides of the channel region. The channel region and the drift zone are disposed along a first direction parallel to the main surface between the source region and the drain region. The gate dielectric has a thickness that varies at different positions of the gate electrode.

Abstract: A method for producing a MEMS device comprises forming a semiconductor layer stack, the semiconductor layer stack comprising at least a first monocrystalline semiconductor layer, a second monocrystalline semiconductor layer and a third monocrystalline semiconductor layer, the second monocrystalline semiconductor layer formed between the first and third monocrystalline semiconductor layers. A semiconductor material of the second monocrystalline semiconductor layer is different from semiconductor materials of the first and third monocrystalline semiconductor layers. After forming the semiconductor layer stack, at least a portion of each of the first and third monocrystalline semiconductor layers is concurrently etched.

Abstract: A method of forming an integrated circuit includes forming gate trenches in the first main surface of a semiconductor substrate, the gate trenches being formed so that a longitudinal axis of the gate trenches runs in a first direction parallel to the first main surface. The method further includes forming a source contact groove running in a second direction parallel to the first main surface, the second direction being perpendicular to the first direction, the source contact groove extending along the plurality of gate trenches, forming a source region including performing a doping process to introduce dopants through a sidewall of the source contact groove, and filling a sacrificial material in the source contact groove. The method also includes, thereafter, forming components of the logic circuit element, thereafter, removing the sacrificial material from the source contact groove, and filling a source conductive material in the source contact groove.

Abstract: A semiconductor device includes a source region and a drain region of a first conductivity type. The source region and the drain region are arranged in a first direction parallel to a first main surface of a semiconductor substrate. The semiconductor device further includes a layer stack having a drift layer of the first conductivity type and a compensation layer of a second conductivity type. The drain region is electrically connected with the drift layer. The semiconductor device also includes a connection region of the second conductivity type extending into the semiconductor substrate, the connection region being electrically connected with the compensation layer, wherein the buried semiconductor portion does not fully overlap with the drift layer.

Abstract: A semiconductor device comprises a transistor in a semiconductor body having a first main surface. The transistor comprises a source region of a first conductivity type, a drain region, a body region of a second conductivity type, different from the first conductivity type, and a gate electrode disposed in gate trenches extending in a first direction parallel to the first main surface. The source region, the body region and the drain region are arranged along the first direction. The body region comprises first ridges extending along the first direction, the first ridges being disposed between adjacent gate trenches in the semiconductor body. The body region further comprises a second ridge. A width of the second ridge is larger than a width of the first ridges, the widths being measured in a second direction perpendicular to the first direction.

Abstract: A semiconductor device includes a transistor in a semiconductor substrate having a first main surface. The transistor includes a source region, a source contact, the source contact including a first and second source contact portion, and a gate electrode in a gate trench in the first main surface adjacent to a body region. The body region and a drift zone are disposed along a first direction parallel to the first main surface between the source region and a drain region. The second source contact portion is disposed at a second main surface of the semiconductor substrate. The first source contact portion includes a source conductive material in direct contact with the source region, the first source contact portion further including a portion of the semiconductor substrate between the source conductive material and the second source contact portion. The semiconductor device further includes a temperature sensor in the semiconductor substrate.

Abstract: A semiconductor device includes a transistor including a source region, a drain region, and a gate electrode. The gate electrode is disposed in a first trench arranged in a top surface of the semiconductor substrate. The device further includes a control electrode. The control electrode is disposed in a second trench arranged in the top surface of the semiconductor substrate. The second trench has a second shape that is different from a first shape of the first trench.

Abstract: A semiconductor device comprises a field effect transistor in a semiconductor substrate having a first main surface. The field effect transistor comprises a source region, a drain region, a body region, and a gate electrode at the body region. The gate electrode is configured to control a conductivity of a channel formed in the body region, and the gate electrode is disposed in gate trenches. The body region is disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The body region has a shape of a ridge extending along the first direction, the body region being adjacent to the source region and the drain region. The semiconductor device further comprises a source contact and a body contact, the source contact being electrically connected to a source terminal, the body contact being electrically connected to the source contact and to the body region.

Abstract: A semiconductor device includes a transistor formed in a semiconductor substrate having a main surface. The transistor includes a source region of a first conductivity type, a drain region of the first conductivity type, a channel region of a second conductivity type, a gate trench adjacent to a first sidewall of the channel region, a gate conductive material disposed in the gate trench, the gate conductive material being connected to a gate terminal, and a channel separation trench adjacent to a second sidewall of the channel region. The second sidewall faces the first sidewall via the channel region. The channel separation trench is filled with an insulating separation trench filling consisting of an insulating material in direct contact with the channel region. The source region and the drain region are disposed along a first direction. The first direction is parallel to the main surface.

Abstract: A semiconductor device and a method of manufacturing the same is provided. The semiconductor device including a transistor cell in a semiconductor substrate having a first main surface. The transistor cell includes a gate electrode in a gate trench in the first main surface adjacent to a body region. A longitudinal axis of the gate trench extends in a first direction parallel to the first main surface. A source region, a body region and a drain region are disposed along the first direction. A source contact comprises a first source contact portion and a second source contact portion. The second source contact portion is disposed at a second main surface of the semiconductor substrate. The first source contact portion includes a source conductive material in direct contact with the source region and a portion of the semiconductor substrate arranged between the source conductive material and the second source contact portion.

Abstract: A semiconductor device in a semiconductor substrate having a first main surface includes a transistor array and a termination region. The transistor array includes a source region, a drain region, a body region, a drift zone, and a gate electrode at the body region. The gate electrode is configured to control a conductivity of a channel in the body region. The body region and the drift zone are disposed along a first horizontal direction between the source region and the drain region. The transistor array further includes first field plate trenches in the drift zone. A longitudinal axis of the first field plate trenches extends in the first horizontal direction. The semiconductor device further includes a second field plate trench, a longitudinal axis of the second field plate trench extending in a second horizontal direction perpendicular to the first direction.

Abstract: A semiconductor device is provided including a transistor cell in a semiconductor substrate having a first main surface. The transistor cell includes a gate electrode in a gate trench in the first main surface adjacent to a body region. A longitudinal axis of the gate trench extends in a first direction parallel to the first main surface. A source region, a body region and a drain region are disposed along the first direction. A source contact comprises a first source contact portion and a second source contact portion. The second source contact portion is disposed at a second main surface of the semiconductor substrate. The first source contact portion includes a source conductive material in direct contact with the source region and a portion of the semiconductor substrate arranged between the source conductive material and the second source contact portion.

Abstract: A semiconductor device is manufactured at least partially in a semiconductor substrate. The substrate has first and second opposing main surfaces. The method includes forming a cell field portion and a contact area, the contact area being electrically coupled to the cell field portion, and forming the cell field portion by at least forming a transistor. The method further includes insulating a part of the semiconductor substrate from other substrate portions to form a connection substrate portion, forming an electrode adjacent to the second main surface so as to be in contact with the connection substrate portion, forming an insulating layer over the first main surface, forming a metal layer over the insulating layer, forming a trench in the first main surface, and filling the trench with a conductive material, and electrically coupling the connection substrate portion to the metal layer via the trench.

Abstract: A semiconductor device includes a transistor in a semiconductor substrate. The transistor includes a drift zone of a first conductivity type adjacent to a drain region, and a first field plate and a second field plate adjacent to the drift zone. The second field plate is arranged between the first field plate and the drain region. The second field plate is electrically connected to a contact portion arranged in the drift zone. The transistor further includes an intermediate portion of the first conductivity type at a lower doping concentration than the drift zone. A distance between the intermediate portion and the drain region is smaller than the distance between the contact portion and the drain region.

Abstract: A method of manufacturing a semiconductor device includes forming a transistor in a semiconductor substrate having a first main surface. The transistor is formed by forming a source region, forming a drain region, forming a channel region, forming a drift zone, and forming a gate electrode adjacent to at least two sides of the channel region. The channel region and the drift zone are disposed along a first direction parallel to the first main surface, between the source region and the drain region. Forming the semiconductor device further includes forming a conductive layer, a portion of the conductive layer being disposed beneath the gate electrode and insulated from the gate electrode.

Abstract: A semiconductor device formed in a semiconductor substrate having a first main surface comprises a transistor array and a termination region. The transistor array comprises a source region, a drain region, a body region, a drift zone, and a gate electrode at the body region. The gate electrode is configured to control a conductivity of a channel formed in the body region. The gate electrode is disposed in first trenches. The body region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The body region has a shape of a first ridge extending along the first direction. The termination region comprises a termination trench, a portion of the termination trench extending in the first direction, a length of the termination trench being larger than a length of the first trenches, the length being measured along the first direction.

Abstract: A semiconductor device comprises a transistor formed in a semiconductor substrate having a first main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, and a gate electrode being adjacent to the channel region. The gate electrode is configured to control a conductivity of a channel formed in the channel region, the channel region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The channel region has a shape of a first ridge extending along the first direction, and the transistor includes a first field plate arranged adjacent to the drift zone.

Abstract: A method of forming an integrated circuit includes forming gate trenches in the first main surface of a semiconductor substrate, the gate trenches being formed so that a longitudinal axis of the gate trenches runs in a first direction parallel to the first main surface. The method further includes forming a source contact groove running in a second direction parallel to the first main surface, the second direction being perpendicular to the first direction, the source contact groove extending along the plurality of gate trenches, forming a source region including performing a doping process to introduce dopants through a sidewall of the source contact groove, and filling a sacrificial material in the source contact groove. The method also includes, thereafter, forming components of the logic circuit element, thereafter, removing the sacrificial material from the source contact groove, and filling a source conductive material in the source contact groove.

Abstract: A semiconductor device includes a transistor in a semiconductor substrate having a first main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, and a gate electrode adjacent to at least two sides of the channel region. The gate electrode is disposed in trenches extending in a first direction parallel to the first main surface. The gate electrode is electrically coupled to a gate terminal. The channel region and the drift zone are disposed along the first direction between the source region and the drain region. The semiconductor device further includes a conductive layer beneath the gate electrode and insulated from the gate electrode. The conductive layer is electrically connected to the gate terminal.

Abstract: A semiconductor device includes a transistor in a semiconductor substrate having a first main surface. The transistor includes a source region, a source contact, the source contact including a first and second source contact portion, and a gate electrode in a gate trench in the first main surface adjacent to a body region. The body region and a drift zone are disposed along a first direction parallel to the first main surface between the source region and a drain region. The second source contact portion is disposed at a second main surface of the semiconductor substrate. The first source contact portion includes a source conductive material in direct contact with the source region, the first source contact portion further including a portion of the semiconductor substrate between the source conductive material and the second source contact portion. The semiconductor device further includes a temperature sensor in the semiconductor substrate.