Abstract: A method and apparatus are provided for use with a power amplifier for protecting active devices on the power amplifier. A peak detector is used by control circuitry to detect the presence of a peak voltage that exceeds a threshold voltage. In response to the detection of a peak voltage, the gain of the power amplifier is reduced.

Abstract: Narrow band tunable radio frequency (RF) power amplifiers (PAs) and related methods are disclosed that provide narrow band tunable gain responses, such as linear gain responses, that can be selected for different frequency bands. The narrow band tunable PAs thereby provide out-of-band rejection for different selectable frequency bands so that narrow band filters are not required in the transmit input path for communication devices. The pass band location and/or bandwidth for the narrow band gain response can be tuned using different techniques, as desired. The narrow band tunable PAs can also be fabricated using CMOS processing, if desired, so that a CMOS PA integrated circuit is provided.

Abstract: ESD (electrostatic discharge) protection for radio frequency (RF) couplers included in the same semiconductor package as other integrated circuits, such as integrated circuits having power amplifier (PA) circuitry, is disclosed along with related systems and methods. The disclosed embodiments provide ESD protection for RF couplers within semiconductor packages by including coupler ESD circuitry within an integrated circuit within the semiconductor package and coupling the connection ports of the RF coupler to this coupler ESD circuitry. Further, this coupler ESD circuitry can be implemented using two sets of serially connected diodes so that the signal connected to the coupler ESD circuitry can swing around ground without being clipped by the ESD circuitry. Still further, the ESD diodes can be formed in deep N well structures to improve isolation and to reduce parasitic capacitance associated with the ESD diodes.

Abstract: A method and apparatus is provided for use in power amplifiers for reducing the peak voltage that transistors are subjected to. A power amplifier is provided with first and second switching devices and an inductor connected between the switching devices. The switching devices are driven such that the switching devices are turned on and off during the same time intervals. Differential RF power amplifiers are also provided with inductive networks coupled at various nodes of the power amplifiers.

Abstract: A method and apparatus is provided for use in power amplifiers for reducing the peak voltage that transistors are subjected to. A power amplifier is provided with first and second switching devices and an inductor connected between the switching devices. The switching devices are driven such that the switching devices are turned on and off during the same time intervals.

Abstract: Narrow band tunable radio frequency (RF) power amplifiers (PAs) and related methods are disclosed that provide narrow band tunable gain responses, such as linear gain responses, that can be selected for different frequency bands. The narrow band tunable PAs thereby provide out-of-band rejection for different selectable frequency bands so that narrow band filters are not required in the transmit input path for communication devices. The passband location and/or bandwidth for the narrow band gain response can be tuned using different techniques, as desired. The narrow band tunable PAs can also be fabricated using CMOS processing, if desired, so that a CMOS PA integrated circuit is provided.

Abstract: Delivered power detection for power amplifiers (PAs) and related systems and methods are disclosed. The disclosed embodiments and techniques provide a delivered power indication for systems using PAs, including such systems for cellular telephone applications, allow power detection circuitry to be integrated on the same integrated circuit die as the PA, and provide power detection circuitry with output signals at baseband frequencies. In one embodiment, the delivered power detection circuitry includes output voltage level detection circuitry and output current level detection circuitry that provide current signals to multiplier circuitry, which in turn provides current output signals proportional to the actual delivered power to the load as represented by the incident power to the load reduced by the reflected power.

Abstract: CMOS power amplifiers (PAs) are disclosed having one or more integrated one-time programming (OTP) memories that are utilized to control at least in part operation of the CMOS PAs. The integrated OTP memories within the CMOS power amplifiers (PAs) allow adjustments, such as one-time factory trimming, of CMOS PA integrated circuits to optimize or improve performance. With this capability, for example, the tuning and biasing of stages within a multi-stage amplifier within a CMOS PA can be measured during factory test and adjusted by setting one or more bits in the OTP memories, as desired. Further, the operation of other circuitry within the PA can also be controlled at least in part with parameter settings stored in the OTP memories.

Abstract: CMOS power amplifiers (PAs) are disclosed having one or more integrated one-time programming (OTP) memories that are utilized to control at least in part operation of the CMOS PAs. The integrated OTP memories within the CMOS power amplifiers (PAs) allow adjustments, such as one-time factory trimming, of CMOS PA integrated circuits to optimize or improve performance. With this capability, for example, the tuning and biasing of stages within a multi-stage amplifier within a CMOS PA can be measured during factory test and adjusted by setting one or more bits in the OTP memories, as desired. Further, the operation of other circuitry within the PA can also be controlled at least in part with parameter settings stored in the OTP memories.

Abstract: A current sensor includes a coils located within the integrated circuit die and inductively coupled to a conductor located in the integrated circuit package holding the die. The inductors sense the current in the conductor and supply the sensed signal to an integrator that supplies a voltage indicative of the current in the conductor.

Abstract: A method and apparatus is provided for use in power amplifiers for reducing the peak voltage that transistors are subjected to. A power amplifier is provided with first and second switching devices and an inductor connected between the switching devices. The switching devices are driven such that the switching devices are turned on and off during the same time intervals.

Abstract: A current sensor includes a sensing circuit for sensing current and supplying indications thereof. The current sensor also includes two or more output terminals coupled to the sensing circuit that alternately supply respective indications of the sensed current according to control signals supplied to the current sensor.

Abstract: A method and apparatus is provided for detecting the output power of a power amplifier. The output power is detected by detecting the absolute values of the voltage and current at the output of the amplifier and mixing the detected voltage and current to generate a signal related to the output power.

Abstract: A method and apparatus is provided for use in power amplifiers for reducing the peak voltage that transistors are subjected to. A power amplifier is provided with first and second switching devices and an inductor connected between the switching devices. The switching devices are driven such that the switching devices are turned on and off during the same time intervals. Differential RF power amplifiers are also provided with inductive networks coupled at various nodes of the power amplifiers. In some examples, techniques are used to stabilize differential power amplifiers by stabilizing common-mode feedback loops.

Abstract: A method and apparatus if provided for shielding a capacitor structure formed in a semiconductor device. In a capacitor formed in an integrated circuit, one or more shields are disposed around layers of conductive strips to shield the capacitor. The shields confine the electric fields between the limits of the shields.

Abstract: In order to extend the measurement range of a current sensor, a current divider is formed by a first conductor formed in a current sensor that is mounted on a printed circuit board and a second conductor on the printed circuit board that electrically shorts at least one input terminal of the current sensor to at least one output terminal of the current sensor. The input terminal of the current sensor supplies the current to be measured to the first conductor and the output terminal supplies the measured current back to the printed circuit board.

Abstract: A method and apparatus if provided for shielding a capacitor structure formed in a semiconductor device. In a capacitor formed in an integrated circuit, one or more shields are disposed around layers of conductive strips to shield the capacitor. The shields confine the electric fields between the limits of the shields.

Abstract: A method and apparatus is provided for use in power amplifiers for reducing the peak voltage that transistors are subjected to. A power amplifier is provided with first and second switching devices and an inductor connected between the switching devices. The switching devices are driven such that the switching devices are turned on and off during the same time intervals. Differential RF power amplifiers are also provided with inductive networks coupled at various nodes of the power amplifiers. In some examples, techniques are used to stabilize differential power amplifiers by stabilizing common-mode feedback loops.

Abstract: An integrated current sensor package includes an integrated circuit having a coil in a metal layer of the circuit. A wire is placed close enough to the coil such that the coil and the wire are inductively coupled with each other.

Abstract: A method and apparatus is provided for use in power amplifiers where multiple parallel power amplifiers provide various output power levels. By selectively enabling and disabling the parallel power amplifiers and combining their outputs, a desired output power can be realized, while choosing a combination of power amplifiers that provide a high efficiency.