Abstract: Apparatuses and methods for providing additional drive to multilevel signals representing data are described. An example apparatus includes a first driver section, a second driver section, and a third driver section. The first driver section is configured to drive an output terminal toward a first selected one of a first voltage and a second voltage. The second driver section configured to drive the output terminal toward a second selected one of the first voltage and the second voltage. The third driver section configured to drive the output terminal toward the first voltage when each of the first selected one and the second selected one is the first voltage. The third driver circuit is further configured to be in a high impedance state when the first selected one and the second selected one are different from each other.

Abstract: Methods, systems, and devices that supports dual-mode modulation in the context of memory access are described. A system may include a memory array coupled with a buffer, and a multiplexer may be coupled with the buffer, where the multiplexer may be configured to output a bit pair representative of data stored within the memory array. The multiplexer may also be coupled with a driver, where the driver may be configured to generate a symbol representative of the bit pair that is output by the multiplexer.

Abstract: An apparatus is disclosed. The apparatus comprises a driver circuit configured to selectively provide a first supply voltage to an output node in a first operating mode and to selectively provide a second supply voltage to the output node in a second operating mode, based on one or more enable signals.

Abstract: Methods, systems, and devices that support variable modulation schemes for memory are described. A device may switch between different modulation schemes for communication based on one or more operating parameters associated with the device or a component of the device. The modulation schemes may involve amplitude modulation in which different levels of a signal represent different data values. For instance, the device may use a first modulation scheme that represents data using two levels and a second modulation scheme that represents data using four levels. In one example, the device may switch from the first modulation scheme to the second modulation scheme when bandwidth demand is high, and the device may switch from the second modulation scheme to the first modulation scheme when power conservation is in demand. The device may also, based on the operating parameter, change the frequency of the signal pulses communicated using the modulation schemes.

Abstract: According to one embodiment, a data buffer is described. The data buffer comprises a first input/output circuit configured to receive and provide a first signal encoded according to a first communications protocol, a second input/output circuit configured to receive and provide a second signal encoded according to a second communications protocol, and a conversion circuit coupled to the first and second input/output circuits and configured to convert the first signal to the second signal and to convert the second signal to the first signal.

Abstract: Techniques are provided herein to increase a rate of data transfer across a large number of channels in a memory device using multi-level signaling. Such multi-level signaling may be configured to increase a data transfer rate without increasing the frequency of data transfer and/or a transmit power of the communicated data. An example of multi-level signaling scheme may be pulse amplitude modulation (PAM). Each unique symbol of the multi-level signal may be configured to represent a plurality of bits of data.

Abstract: Methods, systems, and devices that support variable modulation schemes for memory are described. A device may switch between different modulation schemes for communication based on one or more operating parameters associated with the device or a component of the device. The modulation schemes may involve amplitude modulation in which different levels of a signal represent different data values. For instance, the device may use a first modulation scheme that represents data using two levels and a second modulation scheme that represents data using four levels. In one example, the device may switch from the first modulation scheme to the second modulation scheme when bandwidth demand is high, and the device may switch from the second modulation scheme to the first modulation scheme when power conservation is in demand. The device may also, based on the operating parameter, change the frequency of the signal pulses communicated using the modulation schemes.

Abstract: Methods, systems, and devices for channel modulation for a memory device are described. A system may include a memory device and a host device coupled with the memory device. The system may be configured to communicate a first signal modulated using a first modulation scheme and communicate a second signal that is based on the first signal and that is modulated using a second modulation scheme. The first modulation scheme may include a first quantity of voltage levels that span a first range of voltages, and the second modulation scheme may include a second quantity of voltage levels that span a second range of voltages different than (e.g., smaller than) the first range of voltages. The first signal may include write data carried over a data channel, and the second signal may include error detection information based on the write data that is carried over an error detection channel.

Abstract: Methods, systems, and devices for improving uniformity between levels of a multi-level signal are described. Techniques are provided herein to unify peak-to-peak voltage differences between the amplitudes of data transmitted using multi-level signaling. Such multi-level signaling may be configured to increase a data transfer rate without increasing the frequency of data transfer and/or a transmit power of the communicated data. An example of multi-level signaling scheme may be pulse amplitude modulation (PAM). Each unique symbol of the multi-level signal may be configured to represent a plurality of bits of data.

Abstract: According to one embodiment, A data buffer is described. The data buffer comprises a first input/output circuit configured to receive and provide a first signal encoded according to a first communications protocol, a second input/output circuit configured to receive and provide a second signal encoded according to a second communications protocol, and a conversion circuit coupled to the first and second input/output circuits and configured to convert the first signal to the second signal and to convert the second signal to the first signal.

Abstract: An apparatus is provided, comprising a plurality of memory devices and a buffering device that permits memory devices with a variety of physical dimensions and memory formats to be used in an industry-standard memory module format. The buffering device includes memory interface circuitry and at least one first-in first-out (FIFO) or multiplexer circuit. The apparatus further comprises a parallel bus connecting the buffering device to the plurality of memory devices. The parallel bus includes a plurality of independent control lines, each coupling the memory interface circuitry to a corresponding subset of a plurality of first subsets of the plurality of memory devices. The parallel bus further includes a plurality of independent data channels, each coupling the at least one FIFO circuit or multiplexer circuit to a corresponding subset of a plurality of second subsets of the plurality of memory devices.

Abstract: Techniques are provided herein to increase a rate of data transfer across a large number of channels in a memory device using multi-level signaling. Such multi-level signaling may be configured to increase a data transfer rate without increasing the frequency of data transfer and/or a transmit power of the communicated data. An example of multi-level signaling scheme may be pulse amplitude modulation (PAM). Each unique symbol of the multi-level signal may be configured to represent a plurality of bits of data.

Abstract: Methods, systems, and apparatuses for a memory device that is configurable based on the type of substrate used to couple the memory device with a host device are described. The reconfigurable memory device may include a plurality of components for different configurations. Various components of the reconfigurable memory die may be activated/deactivated based on a type of substrate used in the memory device. The memory device may include an input/output (I/O) interface that is variously configurable. A first configuration may cause the memory device to communicate signals modulated using a first modulation scheme across a channel of a first width. A second configuration may cause the memory device to communicate signals modulated using a second modulation scheme across a channel of a second width. The I/O interface may include one or more switching components to selectively couple pins of a channel together and/or selectively couple components to various pins.

Abstract: Methods, systems, and devices for compensating for memory input capacitance. Techniques are described herein to alter the capacitance of an access line coupled with a plurality of memory cells. The capacitance of the access line may be filtered by an inductive region, which could be implemented in one or more individual signal paths. Thus a signal may be transmitted to one or more selected memory cells and the inductive region may alter a capacitance of the access line in response to receiving a reflection of the signal from an unselected memory cell. In some examples, the transmitted signal may be modulated using pulse amplitude modulation (PAM), where the signal may be modulated using a modulation scheme that includes at least three levels to encode more than one bit of information (e.g., PAM4).

Abstract: Methods, systems, and devices that supports dual-mode modulation in the context of memory access are described. A system may include a memory array coupled with a buffer, and a multiplexer may be coupled with the buffer, where the multiplexer may be configured to output a bit pair representative of data stored within the memory array. The multiplexer may also be coupled with a driver, where the driver may be configured to generate a symbol representative of the bit pair that is output by the multiplexer.

Abstract: Techniques are provided herein to increase a rate of data transfer across a large number of channels in a memory device using multi-level signaling. Such multi-level signaling may be configured to increase a data transfer rate without increasing the frequency of data transfer and/or a transmit power of the communicated data. An example of multi-level signaling scheme may be pulse amplitude modulation (PAM). Each unique symbol of the multi-level signal may be configured to represent a plurality of bits of data.

Abstract: Methods, systems, and apparatuses for a memory device that is configurable based on the type of substrate used to couple the memory device with a host device are described. The reconfigurable memory device may include a plurality of components for different configurations. Various components of the reconfigurable memory die may be activated/deactivated based on a type of substrate used in the memory device. The memory device may include an input/output (I/O) interface that is variously configurable. A first configuration may cause the memory device to communicate signals modulated using a first modulation scheme across a channel of a first width. A second configuration may cause the memory device to communicate signals modulated using a second modulation scheme across a channel of a second width. The I/O interface may include one or more switching components to selectively couple pins of a channel together and/or selectively couple components to various pins.

Abstract: Methods, systems, and devices for multiple concurrent modulation schemes in a memory system are described. Techniques are provided herein to communicate data using a modulation scheme having at least three levels and using a modulation scheme having at least two levels within a common system or memory device. Such communication with multiple modulation schemes may be concurrent. The modulated data may be communicated to a memory die through distinct signal paths that may correspond to a particular modulation scheme. An example of a modulation scheme having at least three levels may be pulse amplitude modulation (PAM) and an example of a modulation scheme having at least two levels may be non-return-to-zero (NRZ).

Abstract: Methods, systems, and devices that supports dual-mode modulation in the context of memory access are described. A system may include a memory array coupled with a buffer, and a multiplexer may be coupled with the buffer, where the multiplexer may be configured to output a bit pair representative of data stored within the memory array. The multiplexer may also be coupled with a driver, where the driver may be configured to generate a symbol representative of the bit pair that is output by the multiplexer.

Abstract: A memory interface may include a transmitter that generates multi-level signals made up of symbols that convey multiple bits of data. The transmitter may include a first data path for a first bit (e.g., a least significant bit (LSB)) in a symbol and a second data path for a second bit (e.g., the most significant bit (MSB)) in the symbol. Each path may include a de-emphasis or pre-emphasis buffer circuit that inverts and delays signals received at the de-emphasis or pre-emphasis buffer circuit. The delayed and inverted data signals may control de-emphasis or pre-emphasis drivers that are configured to apply de-emphasis or pre-emphasis to a multi-level signal.