Abstract: Methods, systems, and devices that supports dual-mode modulation in the context of memory access are described. A system may include a memory array coupled with a buffer, and a multiplexer may be coupled with the buffer, where the multiplexer may be configured to output a bit pair representative of data stored within the memory array. The multiplexer may also be coupled with a driver, where the driver may be configured to generate a symbol representative of the bit pair that is output by the multiplexer.

Abstract: A memory interface may include a transmitter that generates multi-level signals made up of symbols that convey multiple bits of data. The transmitter may include a first data path for a first bit (e.g., a least significant bit (LSB)) in a symbol and a second data path for a second bit (e.g., the most significant bit (MSB)) in the symbol. Each path may include a de-emphasis or pre-emphasis buffer circuit that inverts and delays signals received at the de-emphasis or pre-emphasis buffer circuit. The delayed and inverted data signals may control de-emphasis or pre-emphasis drivers that are configured to apply de-emphasis or pre-emphasis to a multi-level signal.

Abstract: Methods, systems, and apparatuses for a memory device that is configurable based on the type of substrate used to couple the memory device with a host device are described. The reconfigurable memory device may include a plurality of components for different configurations. Various components of the reconfigurable memory die may be activated/deactivated based on a type of substrate used in the memory device. The memory device may include an input/output (I/O) interface that is variously configurable. A first configuration may cause the memory device to communicate signals modulated using a first modulation scheme across a channel of a first width. A second configuration may cause the memory device to communicate signals modulated using a second modulation scheme across a channel of a second width. The I/O interface may include one or more switching components to selectively couple pins of a channel together and/or selectively couple components to various pins.

Abstract: Methods, systems, and devices for multiple concurrent modulation schemes in a memory system are described. Techniques are provided herein to communicate data using a modulation scheme having at least three levels and using a modulation scheme having at least two levels within a common system or memory device. Such communication with multiple modulation schemes may be concurrent. The modulated data may be communicated to a memory die through distinct signal paths that may correspond to a particular modulation scheme. An example of a modulation scheme having at least three levels may be pulse amplitude modulation (PAM) and an example of a modulation scheme having at least two levels may be non-return-to-zero (NRZ).

Abstract: An apparatus is disclosed. The apparatus comprises a driver circuit configured to selectively provide a first supply voltage to an output node in a first operating mode and to selectively provide a second supply voltage to the output node in a second operating mode, based on one or more enable signals.

Abstract: Techniques are provided herein to increase a rate of data transfer across a large number of channels in a memory device using multi-level signaling. Such multi-level signaling may be configured to increase a data transfer rate without increasing the frequency of data transfer and/or a transmit power of the communicated data. An example of multi-level signaling scheme may be pulse amplitude modulation (PAM). Each unique symbol of the multi-level signal may be configured to represent a plurality of bits of data.

Abstract: Methods, systems, and apparatuses for a memory device that is configurable based on the type of substrate used to couple the memory device with a host device are described. The reconfigurable memory device may include a plurality of components for different configurations. Various components of the reconfigurable memory die may be activated/deactivated based on a type of substrate used in the memory device. The memory device may include an input/output (I/O) interface that is variously configurable. A first configuration may cause the memory device to communicate signals modulated using a first modulation scheme across a channel of a first width. A second configuration may cause the memory device to communicate signals modulated using a second modulation scheme across a channel of a second width. The I/O interface may include one or more switching components to selectively couple pins of a channel together and/or selectively couple components to various pins.

Abstract: Methods, systems, and apparatuses for a memory device that is configurable based on the type of substrate used to couple the memory device with a host device are described. The reconfigurable memory device may include a plurality of components for different configurations. Various components of the reconfigurable memory die may be activated/deactivated based on a type of substrate used in the memory device. The memory device may include an input/output (I/O) interface that is variously configurable. A first configuration may cause the memory device to communicate signals modulated using a first modulation scheme across a channel of a first width. A second configuration may cause the memory device to communicate signals modulated using a second modulation scheme across a channel of a second width. The I/O interface may include one or more switching components to selectively couple pins of a channel together and/or selectively couple components to various pins.

Abstract: A memory interface may include a transmitter that generates multi-level signals made up of symbols that convey multiple bits of data. The transmitter may include a first data path for a first bit (e.g., a least significant bit (LSB)) in a symbol and a second data path for a second bit (e.g., the most significant bit (MSB)) in the symbol. Each path may include a de-emphasis or pre-emphasis buffer circuit that inverts and delays signals received at the de-emphasis or pre-emphasis buffer circuit. The delayed and inverted data signals may control de-emphasis or pre-emphasis drivers that are configured to apply de-emphasis or pre-emphasis to a multi-level signal.

Abstract: Methods, systems, and devices for multiplexing distinct signals on a single pin of a memory device are described. Techniques are described herein to multiplex data using a modulation scheme having at least three levels. The modulated data may be communicated to multiple memory dies over a shared bus. Each of the dies may include a same or different type of memory cell and, in some examples, a multi-level signaling scheme may be pulse amplitude modulation (PAM). Each unique symbol of the modulated signal may be configured to represent a plurality of bits of data.

Abstract: An apparatus comprising is disclosed. The apparatus a driver circuit configured to selectively provide a first supply voltage to an output node in a first operating mode and to selectively provide a second supply voltage to the output node in a second operating mode, based on one or more enable signals.

Abstract: Apparatuses and methods for providing additional drive to multilevel signals representing data are described. An example apparatus includes a first driver section, a second driver section, and a third driver section. The first driver section is configured to drive an output terminal toward a first selected one of a first voltage and a second voltage. The second driver section configured to drive the output terminal toward a second selected one of the first voltage and the second voltage. The third driver section configured to drive the output terminal toward the first voltage when each of the first selected one and the second selected one is the first voltage. The third driver circuit is further configured to be in a high impedance state when the first selected one and the second selected one are different from each other.

Abstract: Methods, systems, and devices for compensating for memory input capacitance. Techniques are described herein to alter the capacitance of an access line coupled with a plurality of memory cells. The capacitance of the access line may be filtered by an inductive region, which could be implemented in one or more individual signal paths. Thus a signal may be transmitted to one or more selected memory cells and the inductive region may alter a capacitance of the access line in response to receiving a reflection of the signal from an unselected memory cell. In some examples, the transmitted signal may be modulated using pulse amplitude modulation (PAM), where the signal may be modulated using a modulation scheme that includes at least three levels to encode more than one bit of information (e.g., PAM4).

Abstract: Methods, systems, and devices for multiplexing distinct signals on a single pin of a memory device are described. Techniques are described herein to multiplex data using a modulation scheme having at least three levels. The modulated data may be communicated to multiple memory dies over a shared bus. Each of the dies may include a same or different type of memory cell and, in some examples, a multi-level signaling scheme may be pulse amplitude modulation (PAM). Each unique symbol of the modulated signal may be configured to represent a plurality of bits of data.

Abstract: Methods and apparatuses to transfer data between a first device and a second device are disclosed. In various embodiments, an apparatus includes a first device and a second device. The first device includes at least one first non-differential transmitter coupled to a first channel, at least one second non-differential transmitter coupled to a second channel, and at least one differential receiver to receive a data bit and its complement on the first and second channels in parallel. The second device includes at least one first non-differential receiver coupled to the first channel, at least one second non-differential receiver coupled to the second channel, and at least one differential transmitter to transmit a data bit and its complement on the first and second channels in parallel. Other methods and apparatuses are disclosed.

Abstract: Methods, systems, and devices for improving uniformity between levels of a multi-level signal are described. Techniques are provided herein to unify peak-to-peak voltage differences between the amplitudes of data transmitted using multi-level signaling. Such multi-level signaling may be configured to increase a data transfer rate without increasing the frequency of data transfer and/or a transmit power of the communicated data. An example of multi-level signaling scheme may be pulse amplitude modulation (PAM). Each unique symbol of the multi-level signal may be configured to represent a plurality of bits of data.

Abstract: Methods, systems, and devices for improving uniformity between levels of a multi-level signal are described. Techniques are provided herein to unify vertical alignment between data transmitted using multi-level signaling. Such multi-level signaling may be configured to capture transmitted data during a single clock cycle of a memory controller. An example of multi-level signaling scheme may be pulse amplitude modulation (PAM). Each unique symbol of the multi-level signal may be configured to represent a plurality of bits of data.

Abstract: Apparatuses and methods for a multi-level communication architectures are disclosed herein. An example apparatus may include an input/output (I/O) circuit comprising a driver circuit configured to convert a first bitstream directed to a first memory device and a second bitstream directed to a second memory device into a single multilevel signal. The driver circuit is further configured to drive the multilevel signal onto a signal line coupled to the first memory device and to the second memory device using a driver configured to drive more than two voltages.

Abstract: Apparatuses, memory modules, and methods for performing intra-module data bus inversion operations are described. An example apparatus include a memory module comprising a data bus inversion (DBI) and buffer circuit and a plurality of memories. The DBI and buffer circuit configured to encode a block of data received by the memory module and to provide DBI data and a corresponding DBI bit to a respective memory of the plurality of memories.

Abstract: Apparatuses and methods for providing additional drive to multilevel signals representing data are described. An example apparatus includes a first driver section, a second driver section, and a third driver section. The first driver section is configured to drive an output terminal toward a first selected one of a first voltage and a second voltage. The second driver section configured to drive the output terminal toward a second selected one of the first voltage and the second voltage. The third driver section configured to drive the output terminal toward the first voltage when each of the first selected one and the second selected one is the first voltage. The third driver circuit is further configured to be in a high impedance state when the first selected one and the second selected one are different from each other.