Abstract: A method includes: forming, on a first substrate, a first bonding layer including a first metal oxide material in an amorphous state; forming, on a second substrate, a second bonding layer including a second metal oxide material in an amorphous state; annealing the first and second bonding layers using a laser source, so as to convert the first and second metal oxide materials to a crystalline state; forming, on the first bonding layer, a third bonding layer including a third metal oxide material in an amorphous state; forming, on the second bonding layer, a fourth bonding layer including a fourth metal oxide material in an amorphous state; bonding the first and second substrates to each other through the first to fourth bonding layers; and annealing the third and fourth bonding layers using a heat source, so as to convert the third and fourth metal oxide materials to a crystalline state.

Abstract: Present invention teaches the method of using a keratin hydrolysis peptide (“KHP”) solution to prevent cabbage black spot disease caused by the pathogen of Alternaria brassicicola. By selectively choosing specific weights of feathers and water, and treating the mixture to a high-temperature high-pressure hydrolysis process, the resulting solution is confirmed to contain at least 253 peptides and then apply to the cabbage plants by infusing to the soil containing the cabbage plants. Optionally, the KHP solution can be diluted by water, as disclosed in the specification before infusing to the soil.

Abstract: A bipolar junction transistor with adjustable gain is provided, including a semiconductor substrate and doped layer of a first conductivity type, a doped well region of a second conductivity type and a plurality of heavily doped regions. At least one detection circuit is provided with an input voltage and operable to generate an output voltage for a conducting layer to receive, such that current paths generated in the transistor can be determined when the input voltage varies under different operating conditions, including a normal operating mode, a positive and a negative surged operating mode. When a transient event takes place, the bipolar junction transistor is characterized by having a higher gain than it is operating in the normal mode. The proposed invention achieves in integrating the unidirectional and bidirectional electrical characteristics in the disclosed bipolar junction transistor structure by employing the detection circuit such that adjustable gain is obtained.

Abstract: An imaging optical lens system includes five lens elements which are, in order from an object side to an image side along an optical path: a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. The first lens element has positive refractive power. The second lens element has an image-side surface being concave in a paraxial region thereof. The third lens element has an object-side surface being convex in a paraxial region thereof and an image-side surface being concave in a paraxial region thereof. The fourth lens element has an object-side surface being convex in a paraxial region thereof and an image-side surface being concave in a paraxial region thereof.

Abstract: An optical photographing lens assembly includes two lens element groups, the two lens element groups include six lens elements, the two lens element groups being, in order from an object side to an image side along an optical path, a first lens element group and a second lens element group. The six lens elements are, in order from the object side to the image side along the optical path, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element and a sixth lens element. Each of the six lens elements has an object-side surface towards the object side and an image-side surface towards the image side.

Abstract: The present disclosure describes a method to form a bonded semiconductor structure. The method includes forming a first bonding layer on a first wafer, forming a debonding structure on a second wafer, forming a second bonding layer on the debonding structure, bonding the first and second wafers with the first and second bonding layers, and debonding the second wafer from the first wafer via the debonding structure. The debonding structure includes a first barrier layer, a second barrier layer, and a water-containing dielectric layer between the first and second barrier layers.

Abstract: The invention provides enrichment platform devices for size-based capture of particles in solution. The enrichment platform device is useful for label-free capture of any particle. The invention relates to enrichment platform devices using nanowires and vertically aligned carbon nanotubes. The invention provides methods for making the enrichment platform devices. The invention provides methods for using the enrichment platform devices for filtering particles, capturing particles, concentrating particles, and releasing viable particles.

Abstract: An automatic target image acquisition and calibration system for application in a defect inspection system is disclosed. During the defect inspection system working normally, the automatic target image acquisition and calibration system is configured to find a recognition structure from an article under inspection, and then determines a relative position and a relative 3D coordinate if the article. Therefore, a robotic arm is controlled to carry a camera to precisely face each of a plurality of inspected surfaces of the article, such that a plurality of article images are acquired by the camera. It is worth explaining that, during the defect inspection of the article, there is no need to modulate an image acquiring height and an image acquiring angle of the camera and an illumination of a light source.

Abstract: An optical photographing lens assembly includes seven lens elements which are, in order from an object side to an image side along an optical path, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a seventh lens element. The object-side surface of the first lens element is convex in a paraxial region thereof. The second lens element has positive refractive power. The third lens element has negative refractive power. The image-side surface of the third lens element is concave in a paraxial region thereof. The image-side surface of the seventh lens element is concave in a paraxial region thereof. At least one of the object-side surface and the image-side surface of at least one lens element of the seven lens elements has at least one inflection point.

Abstract: A photographing lens system includes, in order from an object side to an image side along an optical path, a front lens group and a rear lens group. The front lens group includes four lens elements. The rear lens group includes four lens elements. A second lens element counted from the image side in the front lens group has negative refractive power. An image-side surface of a first lens element counted from the image side in the front lens group is convex in a paraxial region thereof. A second lens element counted from the object side in the rear lens group has negative refractive power. An object-side surface of a first lens element counted from the image side in the rear lens group is concave in a paraxial region thereof. At least one lens element in the rear lens group has at least one lens surface being aspheric.

Abstract: An electronic device includes at least two image capturing units which face the same side. The at least two image capturing units include a first image capturing unit and a second image capturing unit. The first image capturing unit includes an optical image system and a first image sensor. The optical image system includes a first lens element and an image surface. The first image sensor is disposed on the image surface of the optical image system thereof and has a first resolution of at least 60 megapixels. The second image capturing unit includes an optical image system and a second image sensor. The optical image system includes a first lens element and an image surface. The second image sensor is disposed on the image surface of the optical image system thereof and has a second resolution of at least 40 megapixels.

Abstract: A semiconductor device structure and methods of forming the same are described. The structure includes a gate dielectric layer disposed over a substrate, a gate electrode layer disposed over the gate dielectric layer, and a first gate spacer disposed adjacent the gate dielectric layer. The first gate spacer includes an inner surface facing the gate dielectric layer and an outer surface opposite the inner surface, and the first gate spacer includes a fluorine concentration that decreases from the inner surface and the outer surface towards a center of the first gate spacer. The structure further includes a second gate spacer disposed on the outer surface of the first gate spacer, and the second gate spacer includes a fluorine concentration that decreases from an outer surface towards an inner surface.

Abstract: A digital signal processing system is provided. The system includes a signal-receiver unit, a signal-generation unit, a tracking unit, and a period-adjustment unit. The signal-receiver unit is configured to receive a transmission signal sequence that includes the first transmission signal and the second transmission signal. The signal-generation unit is configured to generate a processing signal sequence that includes the first processing signal and the second processing signal next to the first processing signal. The tracking unit is configured to keep track of the first arrival time of the first transmission signal. The period-adjustment unit is configured to adjust the duration of the second period based on the first arrival time and the first ideal interval with a specified duration in the first period of the first processing signal, and cause the signal-generation unit to generate the second processing signal with the second period.

Abstract: A manufacturing method for mixed polymer body plates includes: prefabricating at least one polymer material selected from a plastic material, a rubber material or combination thereof; prefabricating at least one solvent selected from a single solvent or a mixed solvent; at room temperature mixing and stirring the polymer material with the solvent to obtain a mixed polymer material which contains no cross linker, extrusion forming hardening the mixed polymer material to obtain a polymer colloidal plate.

Abstract: An artificial dressing, use of artificial dressing for promoting wound healing and method of manufacturing artificial dressing are disclosed. The artificial dressing comprises a gelatin, a polysorbate 20 and a glutaraldehyde for promoting wound healing. The manufacturing method of the artificial dressing comprises the steps of enabling the composition of the gelatin, the polysorbate 20 and the glutaraldehyde to perform a foaming step, a molding step and a freeing step in sequence. The artificial dressing has obvious pores and is capable of absorbing a liquid weight about 25-35 times of its body weight. After thermal disintegration experiments and adhesion tests, disintegration of the artificial dressing is not observed, and in animal experiments, compared with commercially available dressings, the artificial dressing of the invention is capable of accelerating wound healing when applied dryly; and capable of proliferating functional tissues of the wound when applied wetly.

Abstract: A diode test module and method applicable to the diode test module are provided. A substrate having first conductivity type and an epitaxial layer having second conductivity type on the substrate are formed. A well region having first conductivity type is formed in the epitaxial layer. A first and second heavily doped region having second conductivity type are theoretically formed in the well and connected to a first and second I/O terminal, respectively. Isolation trench is formed there in between for electrical isolation. A monitor cell comprising a third and fourth heavily doped region is provided in a current conduction path between the first and second I/O terminal when inputting an operation voltage. By employing the monitor cell, the invention achieves to determine if the well region is missing by measuring whether a leakage current is generated without additional testing equipment and time for conventional capacitance measurements.

Abstract: Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The method includes removing a first semiconductor layer disposed between a second semiconductor layer and a third semiconductor layer and performing an oxide refill process to form a seamless dielectric material between the second and third semiconductor layers. The oxide refill process includes exposing the second and third semiconductor layers to a silicon-containing precursor at a first flow rate for a first duration to form a monolayer, and exposing the monolayer to an oxygen-containing precursor at a second flow rate for a second duration to form the seamless dielectric material, the second flow rate is about twice to about 20 times the first flow rate, and the second duration is about twice to about 20 times the first duration.

Abstract: An imaging optical lens system includes eight lens elements which are, in order from an object side to an image side along an optical path: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element, a seventh lens element and an eighth lens element. The first lens element has positive refractive power. The second lens element has negative refractive power. The seventh lens element has an image-side surface being concave in a paraxial region thereof, and the image-side surface of the seventh lens element has at least one convex critical point in an off-axis region thereof.

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of metal portions, a plurality of nanosheet structures, and a plurality of isolation structures. The metal portions are disposed on the semiconductor substrate and are spaced apart from each other. The nanosheet structures are surrounded by the metal portions such that the nanosheet structures are spaced apart from each other. The isolation structures are disposed on the semiconductor substrate such that two adjacent ones of the metal portions are isolated from each other by a corresponding one of the isolation structures. Each of the isolation structures includes a first dielectric layer and an air gap surrounded by the first dielectric layer.