Abstract: A crib includes a bed body and a sunshade. The bed body includes a bottom plate, two side enclosures located at both ends of the bottom plate, and a first handrail and a second handrail connected to the two side enclosures. The bottom plate, the two side enclosures, the first handrail and the second handrail cooperatively define an accommodating space with an opening. The sunshade includes a frame and a fabric. One end of the frame is movably connected to the first handrail, and the other end of the frame is movably connected to one of the side enclosures. The fabric includes a covering portion covering the frame, and a shielding portion connected among the frame, the first handrail, and the side enclosure.

Abstract: A sole data collection device and a sole data collection method are disclosed. The sole data collection device includes an image capture module, a temperature detection module and a monofilament testing module. The sole data collection device is used for collecting the sole data of a user, and the sole data is transmitted to a cloud server. The sole data collection device and the sole data collection method are not only convenient for a user to collect sole data at home at any time, but also allow the user's caregiver and/or relevant medical care personnel to extract the sole data from the cloud server to screen the user's plantar condition, so as to solve the problem that it is time-consuming and costly to go to a medical institution for relevant examinations.

Abstract: A defect inspection system is disclosed, and comprises a linear light source, N number of cameras, a display device, a tag reader, and a modular electronic device, in which the linear light source, the cameras and the modular electronic device are used for conducting a defect inspection of an article. On the other hand, the display device, the tag reader and the modular electronic device are adopted for conducting in production of at least one labeled example. Therefore, the modular electronic device is allowed to apply a machine learning process to an image classifier under using a training dataset containing the labeled examples, thereby producing at least one new defect recognition model or updating the existing defect recognition model.

Abstract: An optical lens system includes six lens elements from an object side to an image side, the six lens elements are, in order from the object side to the image side, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element and a sixth lens element. Each of the six lens elements has an object-side surface towards the object side and an image-side surface towards the image side. The image-side surface of the second lens element is concave in a paraxial region thereof. The third lens element has positive refractive power. The image-side surface of the fourth lens element is concave in a paraxial region thereof. The image-side surface of the sixth lens element includes at least one inflection point.

Abstract: An imaging lens system includes four lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element and a fourth lens element, and each of the four lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The first lens element has negative refractive power. The fourth lens element has positive refractive power, and the image-side surface of the fourth lens element is convex in a paraxial region thereof. At least one lens element of the imaging lens system has at least one lens surface having at least one inflection point.

Abstract: Gate spacer that improves performance and methods for fabricating such are disclosed herein. An exemplary device includes a gate stack disposed over a semiconductor layer and a gate spacer disposed on a sidewall of the gate stack. A source/drain feature is disposed in the semiconductor layer and adjacent the gate spacer. A low-k contact etch stop layer is disposed on a top surface and a sidewall of the gate spacer and a portion of the gate spacer is disposed between the low-k contact etch stop layer and the semiconductor layer. A source/drain contact is disposed on the source/drain feature and adjacent the low-k contact etch stop layer.

Abstract: The invention provides a semiconductor structure, which comprises a plurality of metal circuit layers stacked with each other, the multi-layer metal circuit layer comprises an aluminum circuit layer which is located at the position closest to a surface among the plurality of circuit layers, the material of the aluminum circuit layer is made of aluminum, and the aluminum circuit layer comprises a concave portion.

Abstract: An integrated circuit (IC) chip with polish stop layers and a method of fabricating the IC chip are disclosed. The method includes forming a first IC chip having a device region and a peripheral region. Forming the first IC chip includes forming a device layer on a substrate, forming an interconnect structure on the device layer, depositing a first dielectric layer on a first portion of the interconnect structure in the peripheral region, depositing a second dielectric layer on the first dielectric layer and on a second portion of the interconnect structure in the device region, and performing a polishing process on the second dielectric layer to substantially coplanarize a top surface of the second dielectric layer with a top surface of the first dielectric layer. The method further includes performing a bonding process on the second dielectric layer to bond a second IC chip to the first IC chip.

Abstract: An aromatic liquid crystal polyester, having repeating units represented by formulae (1) and (2), respectively: where R?, Ar1, Ar2, Ar3, X, Y1, Y2 and Z are those as defined in the specification. Also, a liquid crystal polyester composition including the aromatic liquid crystal polyester and a solvent. The composition has an improved viscosity stability. Also, a liquid crystal polyester film prepared from the liquid crystal polyester composition and a method for manufacturing the same. The liquid crystal polyester film has excellent properties such as a low hygroscopicity and a low dissipation factor (Df).

Abstract: An integrated circuit die with two material layers having metal nano-particles and the method of forming the same are provided. The integrated circuit die includes a device layer comprising a first transistor, a first interconnect structure on a first side of the device layer, a first material layer on the first interconnect structure, wherein the first material layer comprises first metal nano-particles, and a second material layer bonded to the first material layer, wherein the second material layer comprises second metal nano-particles, and wherein the first material layer and the second material layer share an interface.

Abstract: An optical photographing lens assembly includes six lens elements which are, in order from an object side to an image side along an optical path, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, and a sixth lens element. Each of the six lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The first lens element has positive refractive power. The fourth lens element has positive refractive power. The image-side surface of the fourth lens element is convex in a paraxial region thereof. The image-side surface of the fifth lens element is concave in a paraxial region thereof. The sixth lens element has negative refractive power. The object-side surface of the sixth lens element is convex in a paraxial region thereof.

Abstract: An imaging optical lens system includes eight lens elements which are, in order from an object side to an image side along an optical path: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element, a seventh lens element and an eighth lens element. The first lens element has positive refractive power. The second lens element has negative refractive power. The seventh lens element has an image-side surface being concave in a paraxial region thereof, and the image-side surface of the seventh lens element has at least one convex critical point in an off-axis region thereof.

Abstract: A bipolar junction transistor is provided, including a semiconductor substrate and a doped layer of a first conductivity type, a doped well region of a second conductivity type formed in the doped layer, a first, second heavily doped region of the second conductivity type, and a third, fourth and fifth heavily doped region of the first conductivity type in the doped well region. The fifth heavily doped region is coupled with a first pin. The third and fourth heavily doped regions are coupled with a second pin. A sixth and seventh heavily doped region of the first conductivity type are disposed in the doped layer. The sixth and first heavily doped regions are connected in common. The seventh and second heavily doped regions are connected in common. When applying either a positive or negative surged mode, the bipolar junction transistor is formed, having both lateral and vertical conducting paths.

Abstract: An optical photographing lens includes two lens groups including six lens elements. The two lens groups are, in order from an object side to an image side, a first and a second lens groups. The six lens elements are, in order from the object side to the image side, a first lens element through a sixth lens element. A focal length adjusting process is performed by changing an axial distance between the lens groups for varying a focal length of the optical photographing lens. The second lens group moves relative to the first lens group during the focal length adjusting process. At least one lens surface of the optical photographing lens has at least one inflection point always located within an optically effective area during the focal length adjusting process. The second lens element has negative refractive power.

Abstract: A semiconductor structure includes a semiconductor fin disposed over a substrate, a metal gate stack disposed over the semiconductor fin, an epitaxial source/drain (S/D) feature disposed over the semiconductor fin and adjacent to the metal gate stack, and a dielectric feature embedded in the semiconductor fin, where a bottom surface of the epitaxial S/D feature is disposed on a top surface of the dielectric feature, and where sidewalls of the epitaxial S/D feature extend to define sidewalls of the dielectric feature.

Abstract: The present subject matter relates to Nickel-free (Ni-free) sealing of anodized metal substrates. In an example mentation of the present subject matter, an anodized metal substrate is disposed with a first layer of a Ni-free sealing material over a surface of the anodized metal substrate. Further, a second layer of a second sealing material is disposed atop the first layer to sandwich the first layer of Ni-free sealing material between the surface of the anodized metal substrate and the second layer, to form a sealed metal substrate.

Abstract: A semiconductor structure includes a semiconductor fin disposed over a substrate, a metal gate stack disposed over the semiconductor fin, an epitaxial source/drain (S/D) feature disposed over the semiconductor fin and adjacent to the metal gate stack, and a dielectric feature embedded in the semiconductor fin, where a bottom surface of the epitaxial S/D feature is disposed on a top surface of the dielectric feature, and where sidewalls of the epitaxial S/D feature extend to define sidewalls of the dielectric feature.

Abstract: A photographing lens assembly includes five lens elements which are, in order from an object side to an image side along an optical path, a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. Each of the five lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The first lens element has positive refractive power. The third lens element has negative refractive power, the object-side surface of the third lens element is convex in a paraxial region thereof, and the image-side surface of the third lens element is concave in a paraxial region thereof. At least one of the object-side surface and the image-side surface of at least one lens element of the photographing lens assembly is aspheric.

Abstract: A semiconductor device disclosed herein includes an interconnection structure over a substrate, a first magnetic layer over the interconnection structure, one or more conductive features over the first magnetic layer, a dielectric layer over the first magnetic layer and the one or more conductive features, and a second magnetic layer over the dielectric layer. In some embodiments, the one or more conductive features include a textured top surface.

Abstract: A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.