Abstract: A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a stack of channel structures over a semiconductor fin and a gate stack wrapped around the channel structures. The semiconductor device structure also includes a source/drain epitaxial structure adjacent to the channel structures and an isolation structure surrounding the semiconductor fin. A protruding portion of the semiconductor fin protrudes from a top surface of the isolation structure. The semiconductor device structure further includes an embedded epitaxial structure adjacent to a first side surface of the protruding portion of the semiconductor fin.

Abstract: A method for fabricating a semiconductor device includes the steps of first providing a wafer, forming a scribe line on a front side of the wafer, performing a plasma dicing process to dice the wafer along the scribe line without separating the wafer completely, performing a laminating process to form a tape on the front side of the wafer, performing a grinding process on a backside of the wafer, and then performing an expanding process to divide the wafer into chips.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a transistor layer over a substrate and forming a trench in the transistor layer. A depth to width ratio of the trench is greater than or equal to 3. The method further includes filling the trench with a gap-fill material using a flowable chemical vapor deposition process, wherein a precursor and a reactant are used in the flowable chemical vapor deposition process, and a ratio of the precursor to the reactant is about 1.

Abstract: In an exemplary aspect, the present disclosure is directed to a device. The device includes a fin-shaped structure extending lengthwise along a first direction. The fin-shaped structure includes a stack of semiconductor layers arranged one over another along a second direction perpendicular to the first direction. The device also includes a first source/drain feature of a first dopant type on the fin-shaped structure and spaced away from the stack of semiconductor layers. The device further includes a second source/drain feature of a second dopant type on the fin-shaped structure over the first source/drain feature along the second direction and connected to the stack of semiconductor layers. The second dopant type is different from the first dopant type. Furthermore, the device additionally includes an isolation feature interposing between the first source/drain feature and the second source/drain features.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. A semiconductor structure includes a first nitride-containing layer on a side of a carrier substrate, first semiconductor devices thermally coupled to the first nitride-containing layer, a first interconnect structure physically and electrically coupled to first sides of the first semiconductor devices, and a first metal-containing dielectric layer bonding the first nitride-containing layer to the first interconnect structure. A thermal conductivity of the first nitride-containing layer is greater than a thermal conductivity of the first metal-containing dielectric layer.

Abstract: Provided is a method of forming a semiconductor structure including: bonding a device wafer onto a carrier wafer; forming a support structure between an edge of the device wafer and an edge of the carrier wafer, wherein the support structure surrounds a device layer of the device wafer along a closed path; removing a substrate and a portion of a bonding dielectric layer of the device wafer from a backside of the device wafer to expose the support structures while the support structure is in place; and removing the support structure through an acid etchant.

Abstract: Gate spacer that improves performance and methods for fabricating such are disclosed herein. An exemplary device includes a gate stack disposed over a semiconductor layer and a gate spacer disposed on a sidewall of the gate stack. A source/drain feature is disposed in the semiconductor layer and adjacent the gate spacer. A low-k contact etch stop layer is disposed on a top surface and a sidewall of the gate spacer and a portion of the gate spacer is disposed between the low-k contact etch stop layer and the semiconductor layer. A source/drain contact is disposed on the source/drain feature and adjacent the low-k contact etch stop layer.

Abstract: A surface inspection system for foil article is disclosed. The surface inspection system comprises a box having a top long narrow opening and a bottom long narrow opening, a bridge interface, a first light source, a second light source, a first modular camera device having a first camera, and a second modular camera device having a second camera. In which, the first light source, the second light source, the first modular camera device, and the second modular camera device all accommodated in the box, and are coupled to a control box through the bridge interface. Particularly, this surface inspection system is allowed to be integrated in an automatic production line of a foil article like electro-forming aluminum foil (also called electronic aluminum foil), so as to achieve an in-line inspection of the surface morphology of the electro-forming aluminum foil.

Abstract: A heat source detection system includes an infrared light detector, a visible light detector, and a processing unit. The processing unit performs an operation according to at least one instruction, wherein the operation includes steps of: acquiring an infrared light image from the infrared light detector; identifying at least a heat source target according to at least one heat source edge in the infrared light image; determining whether at least one preset condition occurs in the at least one heat source target; and activating the visible light detector when the at least preset condition occurs in the at least one heat source target.

Abstract: An optical photographing system includes seven lens elements which are, in order from an object side to an image side along an optical path: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a seventh lens element. Each of the seven lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The object-side surface of the sixth lens element is convex in a paraxial region thereof. At least one of the object-side surface and the image-side surface of at least one lens element of the optical photographing system has at least one inflection point.

Abstract: A semiconductor device includes a substrate having a bonding area and a pad area, a first inter-metal dielectric (IMD) layer on the substrate, a metal interconnection in the first IMD layer, a first pad on the bonding area and connected to the metal interconnection, and a second pad on the pad area and connected to the metal interconnection. Preferably, the first pad includes a first portion connecting the metal interconnection and a second portion on the first portion, and the second pad includes a third portion connecting the metal interconnection and a fourth portion on the third portion, in which top surfaces of the second portion and the fourth portion are coplanar.

Abstract: In an exemplary aspect, the present disclosure is directed to a device. The device includes a fin-shaped structure extending lengthwise along a first direction. The fin-shaped structure includes a stack of semiconductor layers arranged one over another along a second direction perpendicular to the first direction. The device also includes a first source/drain feature of a first dopant type on the fin-shaped structure and spaced away from the stack of semiconductor layers. The device further includes a second source/drain feature of a second dopant type on the fin-shaped structure over the first source/drain feature along the second direction and connected to the stack of semiconductor layers. The second dopant type is different from the first dopant type. Furthermore, the device additionally includes an isolation feature interposing between the first source/drain feature and the second source/drain features.

Abstract: An optical image lens assembly includes five lens elements which are, in order from an object side to an image side along an optical path: a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. Each of the five lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The object-side surface of the first lens element is convex in a paraxial region thereof. The image-side surface of the third lens element is concave in a paraxial region thereof. The object-side surface of the fourth lens element is concave in a paraxial region thereof, and the image-side surface of the fourth lens element is convex in a paraxial region thereof.

Abstract: A photographing optical lens assembly includes seven lens elements, the seven lens elements being, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a seventh lens element. Each of the seven lens elements includes an object-side surface facing towards the object side and an image-side surface facing towards the image side. The image-side surface of the seventh lens element is concave in a paraxial region thereof and includes at least one inflection point in an off-axis region thereof.

Abstract: A flexible and intuitive system is disclosed, and is disposed to be coupled to at least one camera, at least one robotic arm and a host electronic device of an AVI system. During a normal operation of the system, a configuration parameter setting of the AVI system can be completed after at least one time of robotic arm setting operation and at least one time of camera setting operation are conducted. After that, a plurality of article images acquired from a specific article by the camera are upload to a remote electronic device by the system, such that the remote electronic device utilizes the article images to update (re-train) a defect recognition model. Consequently, after the system integrates the defect recognition model into a defect recognition program that is installed in the host electronic device, the AVI system is hence configured for conducting an appearance inspection of the article.

Abstract: An interactive user feedback system for enhancing the inspection accuracy of an automated visual inspection (AVI) system is disclosed. When working normally, the AVI system acquires an article image from a continuous article transferred by a transfer equipment, and then determines whether there is at least one defect feature existing in the article image or not. Subsequently, the interactive user feedback system enables a display of the electronic device show an inspection report region consisting of M×N sub-regions. As such, the display is enabled to show a zoom-in sub-image containing at least one defect after a sub-region is clicked. Therefore, by viewing the zoom-in sub-image, an inspector can determine whether a defect classification data made by the AVI system is correct or not. If not, the inspector is able to revise the defect classification data through the interactive user feedback system.

Abstract: An imaging lens system includes seven lens elements which are, in order from an object side to an image side along an optical path, a first lens element through a seventh lens element. Each of the seven lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The image-side surface of the sixth lens element is concave in a paraxial region thereof. The object-side surface of the seventh lens element is concave in a paraxial region thereof. At least one of the object-side surface and the image-side surface of at least one of the seven lens elements has at least one inflection point in an off-axis region thereof.

Abstract: A carrier structure and methods of forming and using the same are described. In some embodiments, the method includes forming one or more devices over a substrate, forming a first interconnect structure over the one or more devices, and bonding the first interconnect structure to a carrier structure. The carrier structure includes a semiconductor substrate, a release layer, and a first dielectric layer, and the release layer includes a metal nitride. The method further includes flipping over the one or more devices so the carrier structure is located at a bottom, performing backside processes, flipping over the one or more devices so the carrier structure is located at a top, and exposing the carrier structure to IR lights. Portions of the release layer are separated from the first dielectric layer.

Abstract: An image lens assembly includes four lens groups: a first lens group, a second lens group, a third lens group and a fourth lens group along an optical path. The four lens groups include nine lens elements: a first lens element with positive refractive power, a second lens element with negative refractive power, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element, a seventh lens element, an eighth lens element and a ninth lens element along the optical path. At least one lens element of the image lens assembly has at least one inflection point. At least five lens elements of the image lens assembly are made of plastic material. When focusing or zooming, the first lens group and the fourth lens group stay stationary, while the second lens group and the third lens group move along an optical axis.