Abstract: A method and circuits for implementing power saving self powering down latch operation, and a design structure on which the subject circuit resides are provided. A master slave latch includes a virtual power supply connection. At least one connection control device is coupled between the virtual power supply connection and a voltage supply rail. A driver gate applies a power down signal driving the at least one connection control device to control the at least one connection control device during a self power down mode. The driver gate combines a self power down input signal and a latch data output signal to generate the power down signal.

Abstract: A method, system and computer program product are provided for implementing multiple mask lithography timing variation mitigation for a multiple mask polysilicon (PC) process. An application specific integrated circuit (ASIC) library includes at least one circuit device for a first mask, and at least one circuit device for a second mask. Critical hold time paths and critical setup time paths are identified in a circuit design. For critical hold time paths, circuit devices in the critical hold time paths are placed on a single mask of either the first mask or the second mask. For critical setup time paths, path delays are reduced by providing a mixture of circuit devices on the first mask and the second mask.

Abstract: A static random access memory (SRAM) includes a column of SRAM memory cells. The SRAM may include a circuit to copy a value stored in any SRAM memory cell in a column of SRAM memory cells to any SRAM memory cell in the column of SRAM memory cells in a single cycle of the SRAM.

Abstract: A method and circuit for implementing delay correction in static random access memory (SRAM), and a design structure on which the subject circuit resides are provided. The SRAM circuit includes a precharge enable signal coupled between precharge near and precharge far signals and wordline near and wordline far signals of the SRAM. A precharge pull down device is coupled between the precharge far signal and ground and is controlled responsive to the precharge enable signal to decrease a time delay of the falling transition of the precharge far signal. A respective word line pull up device is coupled between a respective wordline far signal and a voltage supply rail and is controlled responsive to the precharge enable signal to increase wordline voltage level upon a rising transition of the wordline far signal.

Abstract: The present invention provides a method and apparatus for measuring alignment, rotation and bias of mask layers in semiconductor manufacturing by examining threshold voltage variation.

Abstract: A method and circuits for implementing power saving self powering down latch operation, and a design structure on which the subject circuit resides are provided. A master slave latch includes a virtual power supply connection. At least one connection control device is coupled between the virtual power supply connection and a voltage supply rail. A driver gate applies a power down signal driving the at least one connection control device to control the at least one connection control device during a self power down mode. The driver gate combines a self power down input signal and a latch data output signal to generate the power down signal.

Abstract: A semiconductor chip has an SRAM (static random access memory). The SRAM includes a data dependent write assist circuit which, on writes, reduces a supply voltage on one of a cross coupled inverter pair in an SRAM cell, thereby making it easier to overcome the one of the cross coupled inverters.

Abstract: A method and structures are provided for implementing an integrated circuit with an enhanced wiring structure of mixed double density and high performance wires in a common plane. A wiring structure includes a first wire having a first plane and a first via to a second wire in a second plane having a second via and a third wire having the first plane with height equal to the first wire and the first via, and a third via having a height equal to the second wire and the second via.

Abstract: A static random access memory with write-through capability includes a memory cell configured to store a bit of data. A write enable signal is configured to enable writing a write value from a write line input into the static random access memory cell and to enable reading a read value from the memory cell onto a DOT line. A local evaluation circuit is configured to place the write value from the write line onto the DOT line during a single clock cycle in which the value is being written into the memory cell. An early read suppression circuit is configured to electrically isolate the DOT line from a data out line thereby preventing a leakage current loss from the local evaluation circuit and is also configured to make the value placed on the DOT line to be read from the data out line during the single clock cycle.

Abstract: A semiconductor chip has shapes on a particular level that are small enough to require a first mask and a second mask, the first mask and the second mask used in separate exposures during processing. A circuit on the semiconductor chip requires close tracking between a first and a second FET (field effect transistor). For example, the particular level may be a gate shape level. Separate exposures of gate shapes using the first mask and the second mask will result in poorer FET tracking (e.g., gate length, threshold voltage) than for FETs having gate shapes defined by only the first mask. FET tracking is selectively improved by laying out a circuit such that selective FETs are defined by the first mask. In particular, static random access memory (SRAM) design benefits from close tracking of six or more FETs in an SRAM cell.

Abstract: A method and a dynamic Static Random Access Memory (SRAM) circuit for implementing single bit redundancy with any bit decode, and a design structure on which the subject circuit resides are provided. The SRAM circuit includes a plurality of bitline columns and a pair of redundancy columns respectively coupled to a respective merged bit column select and redundancy steering multiplexer. Each merged bit column select and redundancy steering multiplexer receives a respective select signal input. A select signal generation circuit receives a redundancy steering signal and a respective one-hot bit select signal, generating the respective select signal input.

Abstract: A circuit and method erase at power-up all data stored in a DRAM chip for increased data security. All the DRAM memory cells are erased by turning on the transistors for the DRAM storage cells simultaneously by driving the wordlines of all the cells to an activated state. With all the devices turned on, the data stored in the memory cells is erased as the voltage of all the cells connected to a common bitline coalesce to a single value. In a preferred embodiment, the wordlines are all turned on simultaneously during a power on reset period. Preferably a power on reset signal is used to drive each logic gate of the pre-decoder portion of the address decoder in order to assert all the wordlines.

Abstract: A method and structures are provided for implementing an integrated circuit with an enhanced wiring structure of mixed double density and high performance wires in a common plane. A wiring structure includes a first wire having a first plane and a first via to a second wire in a second plane having a second via and a third wire having the first plane with height equal to the first wire and the first via, and a third via having a height equal to the second wire and the second via.

Abstract: A delay circuit receives a data input having an input transition and that generates a data output having an output transition. The delay circuit is powered by a voltage source having a voltage. A first delay element is configured to generate a first data signal with a first edge that has a relatively constant delay relative to the input transition irrespective of the voltage of the voltage source. A second delay element is configured to generate a second data signal with a second edge that has a delay relative to the input transition as a function of the voltage of the voltage source. A selection element causes the output transition at the data output to correspond to a latest selected one of the first edge and the second edge. The delay circuit may be employed in a pulse generating circuit.

Abstract: A semiconductor chip has an SRAM (static random access memory). The SRAM includes a data dependent write assist circuit which, on writes, reduces a supply voltage on one of a cross coupled inverter pair in an SRAM cell, thereby making it easier to overcome the one of the cross coupled inverters.

Abstract: A static random access memory with write-through capability includes a memory cell configured to store a bit of data. A write enable signal is configured to enable writing a write value from a write line input into the static random access memory cell and to enable reading a read value from the memory cell onto a DOT line. A local evaluation circuit is configured to place the write value from the write line onto the DOT line during a single clock cycle in which the value is being written into the memory cell. An early read suppression circuit is configured to electrically isolate the DOT line from a data out line thereby preventing a leakage current loss from the local evaluation circuit and is also configured to make the value placed on the DOT line to be read from the data out line during the single clock cycle.

Abstract: A circuit and method erase at power-up all data stored in a DRAM chip for increased data security. All the DRAM memory cells are erased by turning on the transistors for the DRAM storage cells simultaneously by driving the wordlines of all the cells to an activated state. With all the devices turned on, the data stored in the memory cells is erased as the voltage of all the cells connected to a common bitline coalesce to a single value. In a preferred embodiment, the wordlines are all turned on simultaneously during a power on reset period. Preferably a power on reset signal is used to drive each logic gate of the pre-decoder portion of the address decoder in order to assert all the wordlines.

Abstract: A method and apparatus include conductive material doped within a microchip that accumulates a detectable charge in the presence of ions. Such ions may result from a focused ion beam or other unwelcome technology exploitation effort. Circuitry sensing the charge buildup in the embedded, doped material may initiate a defensive action intended to defeat the tampering operation.

Abstract: A database is queried based upon data contained in a message to obtain sender identification information, at least part of which is not contained in the message as it was sent. The sender identification information is presented to a recipient, which can send a signal accepting or rejecting the message based upon the sender identification information. If an accept signal is entered, the message can be forwarded to the recipient and/or rendered to the recipient.

Abstract: A method and a dynamic Static Random Access Memory (SRAM) circuit for implementing single bit redundancy with any bit decode, and a design structure on which the subject circuit resides are provided. The SRAM circuit includes a plurality of bitline columns and a pair of redundancy columns respectively coupled to a respective merged bit column select and redundancy steering multiplexer. Each merged bit column select and redundancy steering multiplexer receives a respective select signal input. A select signal generation circuit receives a redundancy steering signal and a respective one-hot bit select signal, generating the respective select signal input.