Abstract: A semiconductor device has multi-layered interlayer insulating layers 3 formed on a semiconductor substrate 1, and wirings 4 formed in the interlayer insulating layers 3. The interlayer insulating layers 3 are composed of porous bodies having fine columnar pores and parent-material regions consisting mainly of silicon oxides surrounding the fine pores. The wirings 4 are composed of structures wherein columnar substances containing aluminum are dispersed in a base material containing silicon, or regions wherein an electrically conductive material is introduced in a portion of the porous bodies. The average diameter of the fine pores in the porous bodies is 1 nm or larger and 10 nm or smaller, and the average distance between the fine pores is 3 nm or larger and 15 nm or smaller. The fine pores in the porous bodies is formed perpendicularly, or substantially perpendicularly to the film surface on a semiconductor substrate 1.

Abstract: A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.

Abstract: A light-emitting material includes a matrix section 12 and light-emitting sections 11 dispersed and buried in the matrix section. The matrix section 12 comprises a first material and the light-emitting sections comprise a second material showing a eutectic relationship with the first material.

Abstract: A minute structure is provided in which electroconductive paths are only formed in nanoholes, and a material is filled in the nanoholes, which are disposed in a specific area, by using the electroconductive paths.

Abstract: A light-emitting material includes a matrix section 12 and light-emitting sections 11 dispersed and buried in the matrix section. The matrix section 12 comprises a first material and the light-emitting sections comprise a second material showing a eutectic relationship with the first material.

Abstract: A process for producing a structure having a porous layer is provided. The process forms the porous layer with high thickness-controllability. The process comprises steps of preparing a layered product having, on a substrate, a first nonporous layer and a second nonporous layer different in constituting material composition from the first layer; anodizing the layered product to form pores in the first nonporous layer and the second nonporous layer; and removing the second nonporous layer having pores formed therein from the layered product.

Abstract: A CoPt- or FePt-alloy magnetic material in which a temperature to transform into an L10-ordered alloy is reduced and magnetic anisotropy energy is controlled, and a method for manufacturing the magnetic material are provided. In a CoPt- or FePt-alloy magnetic material obtained according to plating, at least one element of Cu, Ni and B is contained with an atomic percent equal to or more than 1% and equal to or less than 40%. A method for manufacturing a magnetic material includes a step of depositing a magnetic material in which at least one element of Cu, Ni and B is contained in a CoPt- or FePt-alloy magnetic material with an atomic percent equal to or more than 1% and equal to or less than 40%, from a plating solution, and a step of transforming the deposited magnetic material into an L10-ordered alloy according to annealing at a temperature equal to or lower than 500° C.

Abstract: A composite structure is formed so as to contain aluminum and silicon or silicon/germanium. The composite structure comprises pillar-shaped members containing aluminum and a region containing silicon or silicon/germanium and surrounding the pillar-shaped members. The structure contains silicon or silicon/germanium at a content not less than 20 atomic % and not more than 70 atomic % relative to the total amount aluminum and silicon or silicon/germanium.

Abstract: An electronic device in which a substrate with a pair of electrodes is provided and a carbon nanotube is formed or arranged in relation to the electrodes.

Abstract: A fluid control device has very fine pores with an average diameter not greater than 10 nm and provides a large flux. The fluid control device comprises an anodized alumina film having fine pores and a silicon based micro-porous film having very fine pores and made from an AlSi mixed film and the fine pores and the very fine pores are at least partly linked with each other. The fluid control device is prepared from a film including at least an aluminum layer and an AlSi mixed film by forming an anodized alumina film having fine pores by way of an anodization process for the aluminum layer part and also forming a silicon based micro-porous film having very fine pores containing silicon as principal ingredient by way of an anodization process or etching process for the AlSi mixed film. The fluid control device can be used as filter or ultrafilter film that allows fluid and gas to pass through it.

Abstract: A structure having a hole, including a substrate, a first layer including an alumina hole, and a second layer disposed between the substrate and the fist layer, wherein the second layer contains silicon, and has a smaller hole than the alumina hole.

Abstract: A fluid control device has very fine pores with an average diameter not greater than 10 nm and provides a large flux. The fluid control device comprises an anodized alumina film having fine pores and a silicon based micro-porous film having very fine pores and made from an AlSi mixed film and the fine pores and the very fine pores are at least partly linked with each other. The fluid control device is prepared from a film including at least an aluminum layer and an AlSi mixed film by forming an anodized alumina film having fine pores by way of an anodization process for the aluminum layer part and also forming a silicon based micro-porous film having very fine pores containing silicon as principal ingredient by way of an anodization process or etching process for the AlSi mixed film. The fluid control device can be used as filter or ultrafilter film that allows fluid and gas to pass through it.

Abstract: A semiconductor device array comprising highly densely arranged nano-size semiconductor devices is prepared by a simple method. The array comprises a porous body having cylinder-shaped pores formed by removing cylinder-shaped regions from a structure that includes a matrix member formed so as to contain silicon or germanium and the cylinder-shaped regions containing aluminum and dispersed in the matrix member, semiconductor regions formed in the pores, each having at least a p-n or p-i-n junction, and a pair or electrodes, arranged respectively on the top and at the bottom of the semiconductor regions. The semiconductor regions and the pair of electrodes form a plurality of semiconductor devices on a substrate.

Abstract: The invention provides a magnetic recording medium and a method of manufacturing the magnetic recording medium, in which a high density and good storage stability can be achieved by giving anisotropy in shape to a magnetic substance. A plan shape of the magnetic substance in the magnetic recording medium, which appears on the recording surface side, is an ellipse that is present within a rectangle and has a minor axis with a length equal to a short side of the rectangle. A quadrilateral defined by four intersects of two adjacent vertical rows and two adjacent horizontal rows, each of these rows comprising a plurality of pores, has a rectangular or rhombic shape.

Abstract: A magnetic recording medium is provided while including a recording layer in which magnetic materials are in the shape of a circular cylinder and uniformity and size reduction are achieved simultaneously. The magnetic recording medium includes a recording layer and an electrode layer disposed on a substrate, wherein the recording layer and the electrode layer are disposed in the same plane. The above-described electrode layer is disposed adjacently to the end portion of the plane in which the recording layer on the substrate is disposed. A matrix surrounding magnetic material portions of the above-described recording layer contains alumina as a constituent provided by anodization of aluminum. Alternatively, the matrix surrounding the magnetic material portions of the above-described recording layer contains at least one of Si and Ge or an oxide thereof as a constituent.

Abstract: An electronic device in which a substrate with a pair of electrodes is provided and a carbon nanotube is formed or arranged in relation to the electrodes.

Abstract: A stable FePt plating solution is provided. Further a process for electroplating is provided for producing an FePt magnetic material having especially strong coercive force and excellent properties by use of the plating solution. The plating solution contains ionic Fe, ionic Pt, and a complex agent, at a molar ratio (Fe/Pt) of the ionic Fe to the ionic Pt ranging from 0.75 to 3.

Abstract: An electron-beam excitation laser has a laser structure with a light emitter and reflectors on one hand and an electron source on the other hand, wherein at least part of the light emitter or reflectors has a multidimensional photonic crystal structure. An electron-beam excitation laser includes an electron source emitting electrons and a laser structure consisting of a light emitter and reflectors, accelerates electrons from the electron source, and irradiates the electrons to the laser structure to emit a laser beam from the laser structure, wherein the reflectors and/or the light emitter in the laser structure are formed with multidimensional photonic crystals in which dielectrics with different dielectric constants are arrayed in a plurality of directions at periodic intervals, and one of the dielectrics with different dielectric constants may be formed with a light-emitting material.

Abstract: A novel mold is provided. The mold is prepared through steps of forming concavo-convex pattern on substrate, forming a film by embedding material of a composition having shape-memory in the concavo-convex pattern, and forming mold having the concavo-convex pattern by separating the film from the concavo-convex pattern after the film formation in the film formation step.

Abstract: A liquid application material that is capable of forming an oxidized insulator as a result of baking is applied onto a support substrate to produce an object of processing. Then, a mold having projection structures with intervals of nanometers is pressed against the applied liquid material to produce corresponding recess structures. Thereafter, the applied liquid material is baked in oxygen-containing gas or oxidized in ozone or oxygen plasma to make it electrically highly resistive. Subsequently, a layer to be anodized is formed on said oxidized insulator. Then, the layer to be anodized is actually anodized in an acidic solution to form fine holes that are aligned with the respective recess structures in the anodized layer. Accordingly, fine recess structures can be manufactured with ease.