Abstract: A nanostructure is a porous body comprising a plurality of pillar-shaped pores and a region surrounding them, the region being an oxide amorphous region formed so as to contain C, Si, Ge or a material of a combination of them. Such a nanostructure can be used as a functional material in light emitting devices, optical devices and microdevices. It can also be used as a filter.

Abstract: An anodized coating suitable for formation of highly regulated pores is provided. A method for production of a structure having pores characterized by including the steps of: forming starting points at predetermined intervals in an aluminum alloy formed on a substrate; and forming pores by anodization with the starting points as origins.

Abstract: A photoelectric conversion device comprising at least an electron acceptive charge transfer layer, an electron donative charge transfer layer, and a light absorption layer existing between the charge transfer layers, wherein either one of the charge transfer layers comprises a semiconductor acicular crystal layer comprising an aggregate of acicular crystals or a mixture of an acicular crystal and another crystal, and a method of producing the device are disclosed. Consequently, a photoelectric conversion device being capable of smoothly carrying out transfer of electrons and having high photoelectric conversion efficiency is provided.

Abstract: A structure having a hole, including a substrate, a first layer including an alumina hole, and a second layer disposed between the substrate and the fist layer, wherein the second layer contains silicon, and has a smaller hole than the alumina hole.

Abstract: With regard to a function device formed by filling a porous structure with a functional material and a method for manufacturing the functional device, a technique for realizing a structure on a nanometer scale is not fully established. However, a method for manufacturing a function device characterized by including a step of providing a structure including columnar members and an area surrounding the columnar members, a step of removing the columnar members from the structure to form a porous body and a step of filling the porous body with a functional material allows various types of function device to be provided.

Abstract: A nanostructure is a porous body comprising a plurality of pillar-shaped pores and a region surrounding them, said region being an oxide amorphous region formed so as to contain C, Si, Ge or a material of a combination of them. Such a nanostructure can be used as functional material that can be used for light emitting devices, optical devices and microdevices. It can also be used as filter.

Abstract: The present invention relates to a process for producing a structure having holes at prescribed positions. The structure is produced through steps of (A) providing an impressing member having protrusions, and a substrate, (B) forming a layer, on the substrate, from a material having a less strength than the impressing member, (C) forming depressions by impressing the impressing member on the layer corresponding to protrusions of the impressing member, (D) etching the layer to bare at least a part of the surface of the substrate, and (E) anodizing the substrate to form holes on the substrate.

Abstract: There are provided a porous material and a process for producing the same. The porous material has a plurality of columnar pores and an area surrounding the pores, and the area is an amorphous area containing C, Si, Ge or a combination thereof.

Abstract: A minute structure is provided in which electroconductive paths are only formed in nanoholes, and a material is filled in the nanoholes, which are disposed in a specific area, by using the electroconductive paths.

Abstract: A process for producing a nano-structure is provided which enables control of the pore diameters and the pore intervals by film formation conditions. The process produces a nano-structure of an aluminum-silicon-germanium mixed film containing silicon and germanium at a content of 20 to 70 atom % relative to aluminum, the mixed film being constituted of a matrix composed mainly of silicon and germanium in a composition ratio of SixGe1-x (0?X?1), and cylindrical portions mainly composed of aluminum having a diameter of not larger 30 nm in the matrix. In the process, the mixed film is formed at a film-forming rate of not higher than 150 nm/min.

Abstract: To obtain a microcolumnar structured material having a desired material. The columnar structured material includes columnar members 15 obtained by introducing a filler into columnar holes formed in a porous material. The porous material has the columnar holes 14 formed by removing columnar substances from a structured material in which the columnar substances 12 containing a first component are dispersed in a matrix member 13 containing a second component capable of forming a eutectic with the first component. The matrix member 13 may be removed. In the columnar structured material, the filler is a conductive material, and an electrode can be structured by electrically connecting the conductive materials in at least a part of a plurality of holes to a conductor.

Abstract: A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.

Abstract: An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.

Abstract: Cylinders having Al as a major constituent are orderly arrayed in an (Si, Ge) matrix. In a nanostructure in the form of a mixture film having a plurality of cylinders having Al as a major constituent, and a matrix region surrounding the plurality of cylinders and having Si and/or Ge as a major constituent, the total amount of Si and Ge is contained in a proportion in the range from 20 to 70 atomic % in the mixture film, the cylinders are orderly arrayed, the diameter of the cylinders is in the range from 1 to 30 nm, and the interval between the cylinders is 30 nm or smaller.

Abstract: There are provided a porous material and a process for producing the same. The porous material has a plurality of columnar pores and an area surrounding the pores, and the area is an amorphous area containing C, Si, Ge or a combination thereof.

Abstract: A nano structure having pore array structures in which a plurality of periodic arrays are formed adjacent to one another and a method of manufacturing the nano structure are provided. A nano structure having periodic array structures of pores formed in an anodized oxide film with a plurality of types of the periodic array structures arranged adjacent to one another is provided. Furthermore, a method of manufacturing a nano structure in which a plurality of periodic array structures formed in an anodized oxide film having different periods are arranged adjacent to one another, including (1) a step of forming pore starting points made up of a plurality of types of periodic arrays on the surface of a substrate comprised of aluminum as a principal component and (2) a step of anodizing the substrate simultaneously at the same anodization voltage is provided.

Abstract: A process of a porous body comprises the steps of disposing a first material in which pores are formed by anodization on a substrate to form a first layer, disposing on the first layer a second material which has a hardness lower than that of the first material and an oxide of which is dissolved by an anodization step to form a second layer, forming a concave structure on a surface of the second layer, oxidizing the second layer, and subjecting the first layer to anodization to dissolve the second layer. A magnetic recording medium or a light-emitting element comprises a first layer which is comprised of an oxide of aluminum and comprises a porous portion on a substrate, and a second layer on the first layer which has a hardness lower than that of the first layer and is comprised of a metal element, wherein the pores are packed with a magnetic substance or a light-emitting material.

Abstract: A light-emitting device is provided that is excellent in light emission efficiency and stability. The light-emitting device has a first part of a first dielectric constant, a second part of a second dielectric constant and a third part of a third dielectric constant, and has a triple junction where they are in contact with one another. Moreover, a first and a second electrode are provided for applying a voltage for controlling an electric field at the triple junction and in the vicinity thereof. Further, at least one of the first, the second and the third parts is a constituted by light-emitting material, and the triple junction forms a closed line.

Abstract: The invention provides a structured material composed by including a noble metal, in which an oriented layer is formed on a layer containing a Group 4A metal. The invention enables to form an oriented layer, which has required a high temperature for formation, by a low temperature process.

Abstract: A thermoelectric conversion material and a thermoelectric conversion device having a novel structure of an increased figure of merit are provided by forming nano-wires of thermoelectric material in a smaller cross-sectional size. The thermoelectric conversion material comprises nano-wires obtained by introducing a thermoelectric material (semiconductor material) into columnar pores of a porous body. The porous body is formed by providing a structure in which columns of a column-forming material containing a first component (for example, aluminum) are distributed in a matrix containing a second component (for example, silicon or germanium or a mixture of them) being eutectic with the first component, and then removing the column-forming material from the structure. The average diameter of the nano-wires of the thermoelectric material is 0.5 nm or more and less than 15 nm, and the spacing of the nano-wires is 5 nm or more and less than 20 nm.