Abstract: Embodiments of methods of creating a gasket for parts used in semiconductor processing are provided herein. In some embodiments, a method of creating a gasket includes: applying an elastomer material on a surface of a part used for substrate processing; and laser engraving the elastomer material to form the elastomer gasket to define a sealing surface on the part.

Abstract: A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 ?m. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol % to less than 100 mol % of Y2O3, over 0 mol % to 60 mol % of ZrO2, and 0 mol % to 9 mol % of Al2O3.

Abstract: An electrostatic chuck (ESC) including a ceramic body having a first surface with two or more regions defined on the first surface arranged concentrically with respect to each other on the first surface. Each region includes a retaining ring arranged on the first surface and defining an outer edge of the region, and structures arranged on the first surface and within the region configured to support a surface of a substrate when the substrate is retained by the electrostatic chuck. The ESC includes gas conduits configured to introduce a gas into the two or more regions through the ceramic body and to the first surface, and embedded electrodes within the ceramic body and arranged with respect to the first surface and configured to generate a retaining force on the surface of the substrate.

Abstract: Methods and apparatus provide in-situ pressure sensors for apparatus used in semiconductor manufacturing processes. In some embodiments, the apparatus may comprise a showerhead body, a first gas channel of the showerhead body, a second gas channel of the showerhead body, one or more first gas pressure sensors positioned on a surface of the first gas channel, and one or more second gas pressure sensors positioned on a surface of the second gas channel. The apparatus may be formed by additive manufacturing including the pressure sensors and electrical connections to the pressure sensors. In some embodiments, a controller may be utilized to control semiconductor processes based on the pressure readings from the in-situ pressure sensors.

Abstract: Example structures, methods, and systems for additive manufacturing of a gas hub and delivery nozzle are disclosed. One example structure includes a unitary gas hub and distribution nozzle that includes a gas hub portion and a gas delivery nozzle portion. The gas hub portion includes multiple gas inlet paths and one or more plenum chambers. The multiple gas inlet paths and the one or more plenum chambers form fully recursive gas paths. Each of the one or more plenum chambers has one or more output holes. The gas delivery nozzle portion includes multiple gas flow paths, where each gas flow path is coupled to one of the one or more output holes in each of the one or more plenum chambers, and each gas flow path has a respective output at an outer surface of the gas delivery nozzle portion.

Abstract: Embodiments of methods of fabricating and refurbishing a component having a seal are provided. A method of fabricating a component having a seal includes: depositing a first layer directly onto a sealing surface of a body, wherein the first layer includes a 3D surface pattern; and depositing a second layer onto the first layer, wherein the second layer includes a seal material. A method of refurbishing a component having a seal includes: providing a component including a body and a seal attached to the body; removing at least a portion the seal from a sealing surface of the body to form an exposed portion of the sealing surface; depositing a first layer directly onto the exposed portion of the sealing surface, wherein the first layer includes a 3D surface pattern; and depositing a second layer onto the first layer, wherein the a second layer includes seal material.

Abstract: Example structures, methods, and systems for additive manufacturing of components of source and gas delivery nozzle assembly are disclosed. One example structure includes a unitary gas distribution nozzle assembly that includes an upper electrode portion and a lower electrode portion joined by multiple joining structures, and one or more gas zone divider walls positioned between the upper electrode portion and the lower electrode portion. The unitary gas distribution nozzle assembly is of a single material. Each of the multiple joining structures is positioned between the upper electrode portion and the lower electrode portion. Each of the multiple joining structures is configured to transfer radio-frequency (RF) energy and thermal energy between the upper electrode portion and the lower electrode portion. The one or more gas zone divider walls are configured to separate a region between the upper electrode portion and the lower electrode portion into two or more plenum chambers.

Abstract: Systems, methods, and apparatus including designs embodied in machine-readable media for a gas break used in semiconductor processing systems. The apparatus includes a gas break structure comprising an insulating material and having one or more gas flow paths formed within a body of the gas break structure, the gas break structure configured to provide a specified impedance when coupled between a grounded gas distribution manifold and an electrically charged gas delivery nozzle, the gas break structure further comprising an internal structure having a specified geometry comprising a repeating structure and one or more empty gaps between elements of the repeating structure. The gas break can be formed using additive manufacturing.

Abstract: The present disclosure is directed to a system and method to identify and track parts of a semiconductor processing chamber, as well as the status of the parts, and store status information in a centralized location as status changes over time.

Abstract: A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 µm. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol% to less than 100 mol% of Y2O3, over 0 mol% to 60 mol% of ZrO2, and 0 mol% to 9 mol% of Al2O3.

Abstract: Methods and apparatus for producing bulk silicon carbide and producing silicon carbide coatings are provided herein. The method includes feeding a mixture of silicon carbide and ceramic into a plasma sprayer. The plasma generates a stream towards a substrate forming a bulk material or optionally a coating on the substrate such as an article upon contact therewith. In embodiments, the substrate can be removed, leaving a component part fabricated from bulk silicon carbide.

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 ?m, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of Y2O3, over 0 mol % to 60 mol % of ZrO2, and 0 mol % to 9 mol % of Al2O3.

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 ?m, wherein the plasma resistant rare earth oxide film is selected from a group consisting of an Er—Y composition, an Er—Al—Y composition, an Er—Y—Zr composition, and an Er—Al composition.

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 ?m, wherein the plasma resistant rare earth oxide is selected from a group consisting of YF3, Er4Al2O9, ErAlO3, and a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.

Abstract: Methods of forming a metallic-ceramic brazed joint are disclosed herein. The method of forming the brazed joint includes deoxidizing the surface of metallic components, assembling the joint, heating the joint to fuse the joint components, and cooling the joint. In certain embodiments, the brazed joint includes a conformal layer. In further embodiments, the brazed joint has features in order to reduce stress concentrations within the joint.

Abstract: Certain embodiments provide a method and non-transitory computer readable medium having instructions that, when executed by a processor of a processing system, cause the processing system to perform a method for improving operation of a semiconductor processing system. The method of part life estimation generally includes obtaining a chamber part having a first surface portion and second surface portion. A data matrix in the first portion of the chamber part is read. The data matrix has raised features. The first portion of the chamber part is cleaned. Wear on the raised features is evaluated. The part is discarded in response to the wear on the raised feature.

Abstract: An RF plasma generator configured to ignite and maintain a plasma from one or more processing gases is disclosed. A switch mode power supply is configured to convert a DC voltage from a DC power source to an RF voltage. A resonance circuit is configured to deliver an amount of power to an ignited plasma from the switch mode power supply. A plasma controller is configured to operate the power supply to apply an RF voltage corresponding to the amount of power to the one or more processing gases through the resonance circuit. The RF voltage increases in amplitude and decreases in frequency until the one or more processing gasses are ignited into a plasma. Responsive to detecting ignition of the plasma, the plasma controller is further configured to continuously adjust the frequency of the switch mode power supply to deliver the amount of power to the ignited plasma. The amount of power is a substantially constant amount of power.

Abstract: A sealing member is provided, including a plurality of nodes and a plurality of antinodes. Each sealing member can be rotated to expose nondamaged lobes for sealing, and prevents the sealing member from falling out of the lobed groove. A chamber is provided, including a groove that the sealing member is placed in. A method of rotating and placing the sealing member is provided, including a rotation to expose nondamaged portions of the sealing member.

Abstract: Certain embodiments provide a method and non-transitory computer readable medium comprising instructions that, when executed by a processor of a processing system, cause the processing system to perform a method for improving operation of a semiconductor processing system. The method of part life estimation generally includes obtaining a chamber part having a first surface portion and second surface portion. A data matrix in the first portion of the chamber part is read. The data matrix has raised features. The first portion of the chamber part is cleaned. Wear on the raised features is evaluated. The part is discarded in response to the wear on the raised feature.

Abstract: A method of reclaiming a used seal includes boiling the used seal in a liquid, and after boiling the used seal in the liquid, baking the used seal. The boiling the used seal may include boiling for a predetermined boiling time in the liquid, and the baking the used seal may include baking the used seal for a predetermined bake time at a predetermined temperature.