Abstract: The object of the invention is to provide such a highly reliable semiconductor device as no defect such as the breakage of a tungsten conductor occurs. This object is achieved by the following means, i.e., a molybdenum film, a tungsten film and another molybdenum film are deposited in this order on an interlayer dielectric film formed on a silicon substrate.

Abstract: A semiconductor device has a gate dielectric film formed of zirconium oxide or hafnium oxide as a chief material and a gate electrode film in contact with the gate dielectric film on one principal surface side of a silicon substrate. The gate dielectric film contains an addition element to prevent diffusion of oxygen.

Abstract: A semiconductor device comprising a semiconductor substrate, gate insulators formed on the substrate, and gate electrodes formed on the gate insulators, the gate insulators which are mainly composed of a material selected from titanium oxide, zirconium oxide and hafnium oxide, and in which compressive strain is produced and equipped with MOS transistors, can suppress leakage current flowing through the gate insulators and has high reliability.

Abstract: Gate insulation films each containing titanium oxide as a primary constituent material are formed on one major surface of a semiconductor substrate. Gate electrode films are formed in contact with the gate insulation films. The gate electrode films contain ruthenium oxide or alternatively iridium oxide as a primary constituent material. In order to prevent electrically conductive elements from diffusing into titanium oxide of the gate insulation films, ruthenium oxide or iridium oxide is effectively used as a primary constituent material of the gate electrodes. A semiconductor device can be realized in which occurrence of a leak current is suppressed by increasing a physical film thickness while sustaining desired dielectric characteristic.

Abstract: Provided is a reliable semiconductor device with a layered interconnect structure that may develop no trouble of voids and interconnect breakdowns, in which the layered interconnect structure comprises a conductor film and a neighboring film as so layered on a semiconductor substrate that the neighboring film is contacted with the conductor film.

Abstract: There is provided a semiconductor device having a wiring structure which reduces possibility of a short circuit, and method of making the device. Besides, there is provided a semiconductor device having high reliability. Further, there is provided a semiconductor device having high yield. A wiring line is formed at one main surface side of a semiconductor substrate, and has a laminate structure of an adjacent conductor layer and a main wiring layer. The main wiring layer contains an added element to prevent migration. The adjacent conductor layer is formed of a material for preventing a main constituent element and the added element of the main wiring layer from diffusing into the substrate beneath the adjacent conductor layer, and the concentration of the added element at a location close to an interface between the adjacent conductor layer and the main wiring layer is low compared to the concentration of the added element in the main wiring layer spaced from the adjacent conductor layer.

Abstract: The object of the invention is to provide such a highly reliable semiconductor device as no defect such as the breakage of a tungsten conductor occurs. This object is achieved by the following means, i.e., a molybdenum film, a tungsten film and another molybdenum film are deposited in this order on an interlayer dielectric film formed on a silicon substrate.

Abstract: A semiconductor device equipped with information storage capacitor comprising a first capacitor electrode, an oxide film, a second capacitor electrode and insulating films containing silicon as a main constituting element, wherein at least one of first and second capacitor electrodes contains as a main constituting element at least one element selected from rhodium, ruthenium, iridium, osmium and platinum, and as an adding element at least one element selected from palladium, nickel, cobalt and titanium, is excellent in adhesiveness between the capacitor electrodes and the insulating films.

Abstract: In a semiconductor device, which comprises a capacitor component comprising a first electrode, an oxide film with a high dielectric constant or ferroelectricity in contact with the first electrode and a second electrode in contact with the oxide film, as formed in this order, on one principal side of a silicon substrate with a metal wiring layer formed thereon, such problems as breaking of tungsten interconnect, lowering of reliability, lowering of yield, etc. of semi-conductor devices can be solved by using molybdenum-containing tungsten as the material of metal interconnect layer.

Abstract: A semiconductor memory includes a structure in which an insulating film is formed on a transistor constituted by a gate oxide film, a gate electrode and diffusion regions, an information storage capacitance device is formed on the insulating film and is connected to the diffusion layer through a polycrystalline silicon film. The capacitance device includes a bottom electrode formed by laminating an electrically conductive film and a precious metal film, an oxide film and a top electrode. The precious metal film contains an additional element having a smaller atomic radius than that of a precious metal element as a main constituent element besides the precious metal element, and interatomic bond energy between this additional element and the precious metal element is within ±20 % of interatomic bond energy between the precious metal elements.