Abstract: A method for producing a compact of an electrolyte containing a sulfonyl imide compound represented by the general formula (1) includes compressing of performing compression-granulating of the electrolyte in a powder form to obtain a sheet-shaped or strip-shaped electrolyte, and pulverizing the sheet-shaped or strip-shaped electrolyte to obtain a granular electrolyte compact, or tableting the electrolyte in a powder form to obtain a tablet-shaped electrolyte compact. LiN(R1SO2)(R2SO2) (wherein R1 and R2 are identical or different from each other and each represent a fluorine atom, an alkyl group with 1 to 6 carbon atoms, or a fluoroalkyl group with 1 to 6 carbon atoms) (1).

Abstract: A document processing method is provided for causing a processor to execute a process. The document processing method includes: confirming whether the extracted order letters are in an ascending order and serially numbered according to a predetermined rule in the document information, the order letters being extracted form units information and defining an order of the units information in the document information, the units information being generated by diving the document information by a predetermined unit; and outputting alert information including a correction candidate which shows the order letters being in the ascending order and serially numbered.

Abstract: A temperature estimation device estimates a drive duty ratio by taking account of the influence of ambient temperature on the energization to a coil part, on the basis of a drive duty ratio and the ambient temperature, and estimates the power consumption of a motor when the coil part is energized with the estimated drive duty ratio, the power consumption of the motor, this power consumption being accompanied by the heat dissipation of the coil part, the power difference between both the power consumption values, the temperature time constant of the coil part, and a temperature variation during a period of the temperature time constant of the coil part, and estimates the temperature variation of the coil part from the ambient temperature on the basis of these estimated values and a last temperature variation of the coil part.

Abstract: A temperature estimation device estimates a drive duty ratio by taking account of the influence of ambient temperature on the energization to a coil part, on the basis of a drive duty ratio and the ambient temperature, and estimates the power consumption of a motor when the coil part is energized with the estimated drive duty ratio, the power consumption of the motor, this power consumption being accompanied by the heat dissipation of the coil part, the power difference between both the power consumption values, the temperature time constant of the coil part, and a temperature variation during a period of the temperature time constant of the coil part, and estimates the temperature variation of the coil part from the ambient temperature on the basis of these estimated values and a last temperature variation of the coil part.

Abstract: To provide a substrate heating apparatus, a substrate heating method and a method of manufacturing an electronic device having excellent uniformity at the time of processing the substrate by a linear heat source. A substrate heating apparatus including a substrate holding tool holding a substrate as a processed object, a heat source heating the substrate held by the substrate holding tool by a linear heating portion, a moving mechanism allowing the substrate holding tool and the heat source to relatively move in a direction orthogonal to a longitudinal direction of the linear heating portion of the heat source and a cooling mechanism arranged in the substrate holding tool and contacting the substrate to cool an outer peripheral portion of the substrate, in which the cooling mechanism has a distribution in cooling ability according to a position of the substrate.

Abstract: A plasma processing apparatus has a circular chamber having an opening portion which serves as a plasma ejection port surrounded by a dielectric member, a gas supply pipe for introducing gas into the inside of the chamber, a coil provided in the vicinity of the chamber, a high-frequency power supply connected to the coil, and a base material mounting table.

Abstract: In an inductively-coupled plasma torch unit, a coil, a first ceramic block, and a second ceramic block are arranged parallel to one another, and an elongated chamber has an annular shape. Plasma generated inside the chamber is ejected toward a substrate through an opening portion in the chamber. The substrate is processed by relatively moving the elongated chamber and the substrate in a direction perpendicular to a longitudinal direction of the opening portion. A rotating ceramic pipe having a cylindrical shape is provided so as to cause a refrigerant to flow into a cavity formed inside the ceramic pipe. Accordingly, it becomes possible to apply greater high-frequency power, thereby enabling fast plasma processing.

Abstract: A plasma processing apparatus having a dielectric member that surrounds a circular chamber having a long shape and communicating with an opening portion having a long and linear shape, a gas supply pipe for introducing gas into an inside of the circular chamber, a coil provided in a vicinity of the circular chamber and having a long shape in parallel with a longitudinal direction of the opening portion, a high-frequency power supply connected to the coil, a base material mounting table that mounts a base material, and a moving mechanism that allows relative movement between the circular chamber and the base material mounting table in a perpendicular direction with respect to an longitudinal direction of the opening portion.

Abstract: Linear coils, a first ceramic block, and a second ceramic block are arranged in an inductively-coupled plasma torch. A chamber has an annular shape. Plasma generated inside the chamber is ejected to a substrate through an opening portion in the chamber. The substrate is processed by relatively moving the chamber and the substrate in a direction perpendicular to a longitudinal direction of the opening portion. The coil is arranged inside a rotating cylindrical ceramic pipe. Accordingly, the plasma can be generated with excellent power efficiency, and fast plasma processing can be performed.

Abstract: According to the invention, there is provided a plasma processing apparatus which can generate plasma stably and efficiently, and can efficiently treat all of the desired regions to be treated of a base material within a short period of time. Provided is a plasma processing apparatus including an opening portion having an opening width of 1 mm or more; a dielectric member that defines a circular chamber constituting a circular space which communicates the opening; a gas supply pipe that introduces gas into an inside of the circular chamber; a coil that is provided in a vicinity of the circular chamber; a high-frequency power supply that is connected to the coil; and a base material mounting table on which a base material is disposed near the opening.

Abstract: To provide a substrate heating apparatus, a substrate heating method and a method of manufacturing an electronic device having excellent uniformity at the time of processing the substrate by a linear heat source. A substrate heating apparatus including a substrate holding tool holding a substrate as a processed object, a heat source heating the substrate held by the substrate holding tool by a linear heating portion, a moving mechanism allowing the substrate holding tool and the heat source to relatively move in a direction orthogonal to a longitudinal direction of the linear heating portion of the heat source and a cooling mechanism arranged in the substrate holding tool and contacting the substrate to cool an outer peripheral portion of the substrate, in which the cooling mechanism has a distribution in cooling ability according to a position of the substrate.

Abstract: A plasma processing device, a plasma processing method and a manufacturing method of an electronic device with excellent uniformity, are capable of performing heating and high-speed processing for a short period of time as well as controlling the distribution of heating performances in a linear direction (amounts of heat influx to a substrate). In an inductively-coupled plasma torch unit, coils, a first ceramic block and a second ceramic block are arranged, and a chamber has an annular shape. A plasma P is applied to a substrate at an opening of the chamber. The chamber and the substrate are relatively moved in a direction perpendicular to a longitudinal direction of the opening. Plural gas jetting ports jetting a gas toward a substrate stage are provided side by side in a direction of a line formed by the opening, thereby controlling the distribution of heating performances in the linear direction and realizing plasma processing with excellent uniformity.

Abstract: A plasma treatment apparatus that includes a chamber having an opening portion which serves as a plasma ejection port surrounded by a dielectric member; a gas supply pipe that introduces gas into an inside of the chamber; a solenoid coil disposed in a vicinity of the chamber; a high-frequency power supply having a pulse modulation function which is connected to the solenoid coil; and a base material mounting table disposed on a plasma ejection port side. Plasma can be stably generated using the plasma treatment apparatus.

Abstract: Linear coils, a first ceramic block, and a second ceramic block are arranged in an inductively-coupled plasma torch. A chamber has an annular shape. Plasma generated inside the chamber is ejected to a substrate through an opening portion in the chamber. The substrate is processed by relatively moving the chamber and the substrate in a direction perpendicular to a longitudinal direction of the opening portion. The coil is arranged inside a rotating cylindrical ceramic pipe. Accordingly, the plasma can be generated with excellent power efficiency, and fast plasma processing can be performed.

Abstract: A plasma processing apparatus that performs plasma processing on a substrate held on a transport carrier including an annular frame and a holding sheet. The apparatus includes a process chamber; a process gas supply unit that supplies process gas to the process chamber; a decompressing mechanism that decompresses the process chamber; a plasma excitation device that generates plasma in the process chamber; a stage in the chamber, on which the transport carrier is loaded; a cooling mechanism for cooling the stage; a cover that partly covers the holding sheet and the frame and that has a window section through which the substrate is partly exposed to plasma; a correction member that presses the frame onto the stage and corrects warpage of the frame; and a movement device that moves the correction member. The correction member is provided separately from the cover to be covered by the cover.

Abstract: A plasma processing device, a plasma processing method and a manufacturing method of an electronic device with excellent uniformity, are capable of performing heating and high-speed processing for a short period of time as well as controlling the distribution of heating performances in a linear direction (amounts of heat influx to a substrate). In an inductively-coupled plasma torch unit, coils, a first ceramic block and a second ceramic block are arranged, and a chamber has an annular shape. A plasma P is applied to a substrate at an opening of the chamber. The chamber and the substrate are relatively moved in a direction perpendicular to a longitudinal direction of the opening. Plural gas jetting ports jetting a gas toward a substrate stage are provided side by side in a direction of a line formed by the opening, thereby controlling the distribution of heating performances in the linear direction and realizing plasma processing with excellent uniformity.

Abstract: Linear coils, a first ceramic block, and a second ceramic block are arranged in an inductively-coupled plasma torch. A chamber has an annular shape. Plasma generated inside the chamber is ejected to a substrate through an opening portion in the chamber. The substrate is processed by relatively moving the chamber and the substrate in a direction perpendicular to a longitudinal direction of the opening portion. The coil is arranged inside a rotating cylindrical ceramic pipe. Accordingly, the plasma can be generated with excellent power efficiency, and fast plasma processing can be performed.

Abstract: To provide a plasma processing device and a plasma processing method capable of performing high-speed processing. In an inductively-coupled plasma torch unit, a coil, a lid and a first ceramic block are bonded together, and a long chamber has an annular shape. Plasma generated in the chamber is ejected from an opening in the chamber toward a substrate. The substrate is processed by moving the long chamber and the substrate mounting table relatively in a direction perpendicular to a longitudinal direction of the opening. The first ceramic block is cooled efficiently by allowing a refrigerant to flow in a refrigerant flow path.

Abstract: To provide a plasma processing device, a plasma processing method and a method of manufacturing electronic devices capable of performing high-speed processing as well as using the plasma stably. In an inductively-coupled plasma, torch unit, a coil, a first ceramic block and a second ceramic block are arranged in parallel, and a long chamber has an annular shape. Plasma generated in the chamber is ejected from an opening in the chamber toward a substrate. The substrate is processed by moving the long chamber and the substrate mounting table relatively in a direction perpendicular to a longitudinal direction of the opening. A discharge suppression gas is introduced into a space between the inductively-coupled plasma torch unit and the substrate inside the chamber through a discharge suppression gas supply hole, thereby generating long plasma stably.

Abstract: To provide a plasma processing device, a plasma processing method and a method of manufacturing electronic devices capable of performing high-speed processing as well as using the plasma stably. In an inductively-coupled plasma torch unit, a coil, a first ceramic block and a second ceramic block are arranged in parallel, and a long chamber has an annular shape. Plasma generated in the chamber is ejected from an opening in the chamber toward a substrate. The substrate is processed by moving the long chamber and the substrate mounting table relatively in a direction perpendicular to a longitudinal direction of the opening. A discharge suppression gas is introduced into a space between the inductively-coupled plasma torch unit and the substrate inside the chamber through a discharge suppression gas supply hole, thereby generating long plasma stably.