Abstract: A back face panel in a plasma display panel is provided with barrier-rib portions, fluorescent barrier-rib portions including a mixed material of a barrier-rib material and a phosphor material and formed on side faces thereof, and a phosphor portion including the phosphor material and formed in a manner so as to cover the fluorescent barrier-rib portions, and each of barrier ribs is formed by each barrier-rib portion and each fluorescent barrier-rib portion, while a phosphor layer is formed by each phosphor portion and each fluorescent barrier-rib portion.

Abstract: A method for producing a plasma display panel includes: (i) providing a front panel and a rear panel, the front panel being a panel wherein an electrode A, a dielectric layer A and a protective layer are formed on a substrate A, and the rear panel being a panel wherein an electrode B, a dielectric layer B, a barrier rib and a phosphor layer are formed on a substrate B; (ii) supplying a glass frit material onto a peripheral region of the substrate A or B to form a glass frit sealing member; (iii) opposing the front and rear panels with each other such that the glass frit sealing member is interposed therebetween; and (iv) heating the opposed front and rear panels to reach a softening point of the glass frit sealing member or a higher temperature than the softening point, while supplying a cleaning gas into a space formed between the opposed front and rear panels.

Abstract: Before a plasma doping process is performed, there is generated a plasma of a gas containing an element belonging to the same group in the periodic table as the primary element of a silicon substrate 9, e.g., a monosilane gas, in a vacuum chamber 1. Thus, the inner wall of the vacuum chamber 1 is covered with a silicon-containing film. Then, a plasma doping process is performed on the silicon substrate 9.

Abstract: An EGR valve device includes a housing having an exhaust gas passage formed inside, a support shaft slidably supported within the housing through a bearing, a valve disposed on the support shaft to open and close the exhaust gas passage, an urging member for urging the support shaft in a direction to close the valve, a valve seat, insert-cast integral with the housing, for closing the exhaust gas passage by abutting against the valve, and an actuator for driving the support shaft in a direction to open the valve, wherein a plurality of recesses or projections are provided axisymmetrically or uniformly in the peripheral portion of the valve seat to be insert-cast.

Abstract: With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to the substrate surface.

Abstract: In order to realize a plasma doping method capable of carrying out a stable low-density doping, exhaustion is carried out with a pump while introducing a predetermined gas into a vacuum chamber from a gas supplying apparatus, the pressure of the vacuum chamber is held at a predetermined pressure and a high frequency power is supplied to a coil from a high frequency power source. After the generation of plasma in the vacuum chamber, the pressure of the vacuum chamber is lowered, and the low-density plasma doping is performed to a substrate placed on a substrate electrode. Moreover, the pressure of the vacuum chamber is gradually lowered, and the high frequency power is gradually increased, thereby the low-density plasma doping is carried out to the substrate placed on the substrate electrode.

Abstract: A method for producing a plasma display panel, the method comprising: (i) preparing a front panel and a rear panel, the front panel being a panel wherein an electrode A, a dielectric layer A and a protective layer are formed on a substrate A, and the rear panel being a panel wherein an electrode B, a dielectric layer B, a partition wall and a phosphor layer are formed on a substrate B; and (ii) opposing the front and rear panels with each other, and sealing them along their peripheries by a sealing material wherein the protective layer is heated to a temperature ranging from 1600° C. to 3600° C. before the sealing of the front and rear panels.

Abstract: A fin-semiconductor region (13) is formed on a substrate (11). A first impurity which produces a donor level or an acceptor level in a semiconductor is introduced in an upper portion and side portions of the fin-semiconductor region (13), and oxygen or nitrogen is further introduced as a second impurity in the upper portion and side portions of the fin-semiconductor region (13).

Abstract: A method for restoring the function of a plasma display panel according to the present invention restores a function of a plasma display panel by raising the temperature of the plasma display panel to 400° C. to 800° C.

Abstract: In order to realize a plasma doping method capable of carrying out a stable low-density doping, exhaustion is carried out with a pump while introducing a predetermined gas into a vacuum chamber from a gas supplying apparatus, the pressure of the vacuum chamber is held at a predetermined pressure and a high frequency power is supplied to a coil from a high frequency power source. After the generation of plasma in the vacuum chamber, the pressure of the vacuum chamber is lowered, and the low-density plasma doping is performed to a substrate placed on a substrate electrode. Moreover, the pressure of the vacuum chamber is gradually lowered, and the high frequency power is gradually increased, thereby the low-density plasma doping is carried out to the substrate placed on the substrate electrode.

Abstract: With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to the substrate surface.

Abstract: It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing. A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6.

Abstract: An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.

Abstract: The present invention aims to provide a gel composition for mycosis treatment, which ensures good absorption and permeation of (2R,3R)-2-(2,4-difluorophenyl)-3-(4-methylenepiperidin-1-yl)-1-(1H-1,2,4-triazol-1-yl)-butan-2-ol into a target site (skin and nail). The present invention also aims to provide a gel composition for mycosis treatment, which is excellent in stability of this drug. It is a gel composition for mycosis treatment, which comprises (2R,3R)-2-(2,4-difluorophenyl)-3-(4-methylenepiperidin-1-yl)-1-(1H-1,2,4-triazol-1-yl)-butan-2-ol or an acid addition salt thereof, a lower alcohol, a polyhydric alcohol and a gel-forming polymer. The gel composition of the present invention is excellent in permeation of KP-103 into a target site and also excellent in permeation into the nail.

Abstract: A method for producing a plasma display panel, the method comprising: (i) preparing a front panel and a rear panel, the front panel being a panel wherein an electrode A, a dielectric layer A and a protective layer are formed on a substrate A, and the rear panel being a panel wherein an electrode B, a dielectric layer B, a partition wall and a phosphor layer are formed on a substrate B; (ii) applying a glass frit material onto a peripheral region of the substrate A or B to form an annular glass frit sealing portion; (iii) opposing the front and rear panels with each other such that the annular glass frit sealing portion is interposed therebetween; (iv) supplying a dry gas into a space formed between the opposed front and rear panels; and (v) melting the annular glass frit sealing portion to cause the front and rear panels to be sealed wherein, in the step (i), the protective layer of the front panel is made from a metal oxide comprising at least two oxides selected from among magnesium oxide, calcium oxide, st

Abstract: A method for producing a plasma display panel comprising a front panel wherein an electrode, a dielectric layer and a protective layer are formed on a substrate of the front panel, a formation of the dielectric layer comprising: (i) preparing a dielectric material comprising a glass component, an organic solvent and silica particles; (ii) supplying the dielectric material onto the substrate having the electrode thereon, and then allowing the organic solvent contained in the supplied dielectric material to evaporate to form a dielectric precursor layer therefrom; (iii) heating the dielectric precursor layer to form a first dielectric layer therefrom; and (iv) heating the surface of the first dielectric layer as a local heat treatment to form a second dielectric layer to a limited depth from the surface of the first dielectric layer.

Abstract: A display unit includes: a display panel for displaying an information image; a memory for storing a compressed image data element corresponding to the information image; an image memory for storing the compressed image data element transferred from the memory; and a controller for decompressing the compressed image data element stored in the image memory and for controlling the display panel to display the information image based on a decompressed image data element.

Abstract: A method of forming an impurity-introduced layer is disclosed. The method includes at least a step of forming a resist pattern on a principal face of a solid substrate such as a silicon substrate (S27); a step of introducing impurity into the solid substrate through plasma-doping in ion mode (S23), a step of removing a resist (S28), a step of cleaning metal contamination and particles attached to a surface of the solid substrate (S25a); a step of anneal (S26). The step of removing a resist (S28) irradiates the resist with oxygen-plasma or brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the resist. The step of cleaning (S25a) brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate.

Abstract: Disclosed is a dense silicon oxide film having a high insulation resistance, which is a glass film having a certain level of thickness. Specifically, disclosed are a silicon oxide film, and a glass film comprising the silicon oxide film and silica particles incorporated in the silicon oxide film. The glass film can be produced by a process comprising the steps of: applying a paste comprising silica particles, an organic silicon compound which is in a liquid form at room temperature and water onto a substrate; and oxidizing the organic silicon compound in the paste.

Abstract: A plasma display panel (PDP) and a method of manufacturing the same suppresses variation in the height of the intersecting barrier walls with a simple method and that prevents cross talk from occurring between the discharge cells. A concave part is formed at a position contacting an intersecting part of a first barrier wall before baking and a second barrier wall before baking orthogonal to the first barrier wall before baking. When such concave part is formed, the values of the surface area per volume of the intersecting part and the surface area per volume of the first barrier wall before baking and the second barrier wall before baking between the intersecting part and the intersecting part adjacent to the intersecting part become substantially equal. As a result, the height of the intersecting part does not become high after baking, a barrier wall of aligned height is obtained, and cross talk does not occur between the discharge cells.