Abstract: It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

Abstract: A method for performing plasma doping which is high in uniformity. A prescribed gas is introduced into a vacuum container from gas supply apparatus while being exhausted through an exhaust hole by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency power of 13.56 MHz is supplied from a high-frequency power source to a coil which is disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. The dielectric window is composed of plural dielectric plates, and grooves are formed in at least one surface of at least two dielectric plates opposed to each other. Gas passages are formed by the grooves and a flat surface(s) opposed to the grooves, and gas flow-out holes which are formed in the dielectric plate that is closest to the sample electrode communicate with the grooves inside the dielectric window.

Abstract: A display device includes a display panel and a control unit. The control unit is configured to control a display condition of the display panel by successively switching a plurality of frames, thereby to display a pointer image indicating a pointer and a path image indicating a path of motion of the pointer image. The path image of a first frame, which is any one of the plurality of frames, is provided continuously from a second location where the pointer image of a second frame, which is another one of the multiple frames and immediately before the first frame, is displayed to a first location where the pointer image of the first frame is displayed.

Abstract: The interior of a vacuum chamber is maintained at a specified pressure by introducing a specified gas into the vacuum chamber having a plasma trap provided therein. Simultaneously, therewith, evacuation of the chamber is performed by a pump as an evacuating device, and a high-frequency power of 100 MHz is supplied to a counter electrode by counter-electrode use high-frequency power supply. Thus, uniform plasma is generated within the vacuum chamber, where plasma processing such as etching, deposition, and surface reforming can be carried out uniformly with a substrate placed on a substrate electrode.

Abstract: A plasma processing apparatus includes a vacuum vessel, a substrate electrode for supporting a substrate, and an antenna disposed in opposition to the substrate electrode and covered with an insulating antenna cover. A first high-frequency power supplies a high-frequency power of a 30 MHz to 3 GHz frequency to the antenna, and a second high-frequency power supply supplies a high-frequency power of a 100 kHz to 20 MHz. A refrigerant supply unit is provided for supplying a refrigerant flow to the antenna, and an electrically conductive sheet is provided between the antenna and the antenna cover. The electrically conductive sheet has a surface that is parallel to the substrate electrode and is larger than an opposing surface of the antenna.

Abstract: An object of the invention is to provide a method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port 11 by a turbo-molecular pump 3 while introducing the gas within the vacuum chamber 1 from a gas supply device 2, and the pressure within the vacuum chamber 1 is kept at a predetermined value by a pressure regulating valve 4. A high-frequency power supply 5 for a plasma source supplies a high-frequency power to a coil 8 provided near a dielectric window 7 to generate inductively coupled plasma within the vacuum chamber 1. A high-frequency power supply 10 for the sample electrode for supplying the high-frequency power to the sample electrode 6 is provided. A matching circuit 13 for the sample electrode and a high-frequency sensor 14 are provided between the sample electrode high-frequency power supply and the sample electrode 6.

Abstract: There are provided a PDP having a higher luminous efficiency and a process for producing the same. In a plasma display panel filled with a discharge gas between a front plate and a rear plate opposed to each other, the front plate 100 comprises a glass substrate 1, electrodes 2 (transparent electrodes 2a and bus electrodes 2b) on the glass substrate 1, the first dielectric layer 4 covering the electrodes 2 and the glass substrate 1 and containing a fluorine atom, the second dielectric layer 5 covering the first dielectric layer 4 and containing a fluorine atom at a less amount than that in the first dielectric layer 4, and a protective layer 6 covering the second dielectric layer 5.

Abstract: Gas supplied to gas flow passages of a top plate from a gas supply device by gas supply lines forms flow along a vertical direction along a central axis of a substrate, so that the gas blown from gas blow holes can be made to be uniform, and a sheet resistance distribution is rotationally symmetric around a substrate center.

Abstract: There are provided a plasma doping method and apparatus which is excellent in a repeatability and a controllability of an implanting depth of an impurity to be introduced into a sample or a depth of an amorphous layer. A plasma doping method of generating a plasma in a vacuum chamber and colliding an ion in the plasma with a surface of a sample to modify a surface of a crystal sample to be amorphous, includes the steps of carrying out a plasma irradiation over a dummy sample to perform an amorphizing treatment together with a predetermined number of samples, irradiating a light on a surface of the dummy sample subjected to the plasma irradiation, thereby measuring an optical characteristic of the surface of the dummy sample, and controlling a condition for treating the sample in such a manner that the optical characteristic obtained at the measuring step has a desirable value.

Abstract: A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.

Abstract: In a plasma processing method for supplying an electric power to a first electrode, making a first electrode have a ground potential, or making a first electrode have a floating potential while supplying gas to a plasma source arranged in a vicinity of an object to be processed at a pressure in a vicinity of an atmospheric pressure. The method includes processing a part of the object to be processed with a plasma in a state where an area of a surface of a potentially controlled second electrode, arranged in a position opposite to the plasma source via the object to be processed, is made superposed on the object to be processed smaller than an area of a surface of the plasma source superposed on the object to be processed.

Abstract: To provide an impurity introducing method which can repeatedly carry out such a process that plasma irradiation for realization of amorphous and plasma doping were combined, in such a situation that steps are simple and through-put is high, without destroying an apparatus. At the time of switching over plasmas which are used in plasma irradiation for realization of amorphous and plasma doping, electric discharge is stopped, and an initial condition of a matching point of a high frequency power supply and a peripheral circuit is reset so as to adapt to plasma which is used in each step, or at the time of switching, a load, which is applied to the high frequency power supply etc., is reduced by increasing pressure and decreasing a bias voltage.

Abstract: A plasma display panel comprising: a front panel comprising a first substrate, a first electrode, a first dielectric layer and a protective layer wherein the first electrode is formed on the first substrate, the first dielectric layer is formed over the first substrate so as to cover the first electrode, and the protective layer is formed on the first dielectric layer; and a rear panel comprising a second substrate, a second electrode, a second dielectric layer and a phosphor layer wherein the second electrode is formed on the second substrate, the second dielectric layer is formed over the second substrate so as to cover the second electrode, the phosphor layer is formed on the second dielectric layer, wherein the front panel and the rear panel are disposed so that the protective layer and the phosphor layer are opposed to each other, and thereby a discharge space is formed between the front panel and the rear panel; characterized in that at least the first dielectric layer has a carbon concentration of from

Abstract: A display unit includes: a display panel for displaying a plurality of information images; a memory for storing a plurality of image data elements corresponding to the information images; an image memory for storing the image data elements transferred from the memory; and a controller for controlling the display panel to display the information images based on the image data elements in the image memory. The controller transfers a part of the image data elements to the image memory on ahead when the display unit starts to operate, and the controller controls the display panel to display a part of information images on ahead based on the part of the image data elements.

Abstract: A display unit includes: a display panel for displaying an information image; a memory for storing a compressed image data element corresponding to the information image; an image memory for storing the compressed image data element transferred from the memory; and a controller for decompressing the compressed image data element stored in the image memory and for controlling the display panel to display the information image based on a decompressed image data element.

Abstract: It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing. A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6.

Abstract: There are provided a plasma doping method and an apparatus which have excellent reproducibility of the concentration of impurities implanted into the surfaces of samples. In a vacuum container, in a state where gas is ejected toward a substrate placed on a sample electrode through gas ejection holes provided in a counter electrode, gas is exhausted from the vacuum container through a turbo molecular pump as an exhaust device, and the inside of the vacuum container is maintained at a predetermined pressure through a pressure adjustment valve, the distance between the counter electrode and the sample electrode is set to be sufficiently small with respect to the area of the counter electrode to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine.

Abstract: An object of the present invention is to provide a plasma display panel and a manufacturing method thereof that can prevent a dielectric layer and a protective layer from being deteriorated and give excellent image display performance, by performing a sealing process effectively. The object can be realized by a plasma display panel including a front panel 10 and a back panel 11 arranged in opposing to each other at a certain gap, the front panel and the back panel being sealed by a sealing layer 17 that is provided on entire peripheral portions of main surfaces of the front panel and the back panel, and the sealing layer is composed of at least one material selected from the group consisting of an organic resin material, an inorganic material, and a metal material (more specifically, a silica material as a main component and an epoxy resin material).

Abstract: It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

Abstract: A plasma processing apparatus including a vacuum chamber, a gas supply unit for supplying gas into the vacuum chamber, an exhausting unit for exhausting the interior of the vacuum chamber, a pressure-regulating valve for controlling the interior of the vacuum chamber to a specified pressure, a substrate electrode for placing thereon a substrate within the vacuum chamber, an antenna provided opposite to the substrate electrode, and a high-frequency power supply capable of supplying to the antenna a high-frequency power having a frequency of 50 MHz to 3 GHz. The plasma processing apparatus also has a dielectric plate sandwiched between the antenna and an inner surface of the vacuum chamber, an antenna cover for covering side surfaces of the antenna and the dielectric plate and a substrate-facing surface of the antenna, a slit cover for covering an exposed surface of the substrate-facing inner surface of the vacuum chamber and fixing the antenna cover to a wall surface of the vacuum chamber.