Abstract: A semiconductor device includes first and second electrodes, a semiconductor part therebetween, first to third control electrodes inside the semiconductor part, and first to third interconnects. The first and second control electrodes are arranged along a front surface of the semiconductor part. The third control electrodes are provided between the first electrode and the first and second electrodes, respectively. The first and second interconnect are electrically connected to the first and second control electrodes, respectively. The third interconnect is electrically connected to the third control electrodes. The semiconductor layer includes first and third layers of a first conductivity type and a second layer of a second conductivity type. The second layer is provided between the first layer and the second electrode. The third layer is provided between the second layer and the second electrode. The second layer faces the first and second control electrodes via insulating portions.

Abstract: A semiconductor device according to the embodiment includes: a transistor region including a first trench, a first gate electrode provided in the first trench, a second trench, a second gate electrode provided in the second trench, a third trench, and a third gate electrode provided in the third trench; a diode region including a fifth trench and a conductive layer provided in the fifth trench; a boundary region including a fourth trench and a fourth gate electrode provided in the fourth trench, the boundary region being provided between the transistor region and the diode region; a first electrode pad electrically connected to the first gate electrode; a second electrode pad electrically connected to the second gate electrode; and a third electrode pad electrically connected to the third gate electrode and the fourth gate electrode.

Abstract: A semiconductor device includes a semiconductor part, first to fourth electrodes and a control electrode. The first and second electrodes are provided respectively on back and front surfaces of the semiconductor part. The third electrode is provided between the first and second electrodes, and provided in the semiconductor part with a first insulating film interposed. The fourth and control electrodes are provided between the second and third electrodes. The fourth and control electrodes extends into the semiconductor part from the front side and faces the third electrode with a second insulating film interposed. The fourth electrode is positioned between the semiconductor part and the control electrode. The first insulating film extends between the semiconductor part and the control electrode and between the semiconductor part and the fourth electrode. The fourth electrode faces the control electrode with a third insulating film interposed, and is electrically connected to the third electrode.

Abstract: Provided is a semiconductor device capable of reducing switching loss at turn-off while suppressing conduction loss. An emitter p? layer 11, a collector p layer 23, a drift layer 10, an emitter electrode 18, a collector electrode 28, an emitter-side gate electrode 17, an emitter n layer 12, a collector p? layer 23a, a collector-side gate electrode 27, and a collector n layer 22 configure a semiconductor device 1, and a total length of a first facing region of the emitter-side gate electrode 17 in a gate width direction facing an emitter layer p? 11 via a gate insulating film 15 is longer than the total length in the gate width direction of a second facing region of a collector-side gate electrode 27 facing an impurity layer 23a via a collector-side gate insulating film 25.

Abstract: According to one embodiment, a drive device includes a drive circuit configured to drive a semiconductor device. The semiconductor device includes first to fourth electrodes, a semiconductor member, and an insulating member. The semiconductor member includes first to fourth semiconductor region. The first semiconductor region includes first to third partial regions. The first semiconductor region is between the first electrode and the second semiconductor region. The third semiconductor region is between the first and second semiconductor regions. The fourth semiconductor region is between the first electrode and the first semiconductor region. The second electrode is electrically connected to the second semiconductor region. The first partial region is between the fourth semiconductor region and the third electrode. The second partial region is between the fourth semiconductor region and the fourth electrode.

Abstract: A semiconductor device includes a semiconductor part, a first electrode and control electrodes at the front side of the semiconductor part. The semiconductor part includes first to fourth layers, first and third layers being of a first conductivity type, second and fourth layers being of a second conductivity type. The control electrodes are provided in a plurality of trenches, respectively. The control electrodes include a first control electrode, and a second control electrode next to the first control electrode. The second layer is provided between the first layer and the first electrode. The third and fourth layers are provided between the second layer and the first electrode. The semiconductor part further includes a first region partially provided between the first and second layers. The first region is provided between the first and third layers, the first region including a material having a lower thermal conductivity than the first layer.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a semiconductor member, and an insulating member. The semiconductor member includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of the first conductivity type, a fifth semiconductor region of the second conductivity type, and a sixth semiconductor region of the second conductivity type. The fifth semiconductor region includes a fourth partial region and a fifth partial region. The fourth partial region is located between the first partial region and the third electrode in a first direction. The fifth partial region is located between the third partial region and the fourth semiconductor region in the first direction.

Abstract: A semiconductor device includes a first electrode, a second electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a fifth semiconductor region, a first gate electrode, and a second gate electrode. The first gate electrode faces the second semiconductor region via a first insulating film. The second gate electrode faces the second semiconductor region via a second insulating film and faces the second electrode via a third insulating film contacting the second insulating film. The fifth semiconductor region includes a boundary portion that electrically contacts the second electrode. A distance between an upper surface of the fourth semiconductor region and the first electrode is greater than a distance between the boundary portion and the first electrode.

Abstract: A semiconductor device includes a semiconductor part, a first electrode and control electrodes at the front side of the semiconductor part. The semiconductor part includes first to fourth layers, first and third layers being of a first conductivity type, second and fourth layers being of a second conductivity type. The control electrodes are provided in a plurality of trenches, respectively. The control electrodes include a first control electrode, and a second control electrode next to the first control electrode. The second layer is provided between the first layer and the first electrode. The third and fourth layers are provided between the second layer and the first electrode. The semiconductor part further includes a first region partially provided between the first and second layers. The first region is provided between the first and third layers, the first region including a material having a lower thermal conductivity than the first layer.

Abstract: A semiconductor device includes a semiconductor part, a first electrode at a back surface of the semiconductor part; a second electrode at a front surface of the semiconductor part; third and fourth electrodes provided between the semiconductor part and the second electrode. The third and fourth electrodes are arranged in a first direction along the front surface of the semiconductor part. The third electrode is electrically insulated from the semiconductor part by a first insulating film. The third electrode is electrically insulated from the second electrode by a second insulating film. The fourth electrode is electrically insulated from the semiconductor part by a third insulating film. The fourth electrode is electrically isolated from the third electrode. the third and fourth electrodes extend into the semiconductor part. The fourth electrode includes a material having a larger thermal conductivity than a thermal conductivity of a material of the third electrode.

Abstract: A semiconductor device according to an embodiment includes: a first trench and a second trench extending in a first direction; a first gate electrode in the first trench; a second gate electrode in the second trench; a first gate wire including a first portion extending in a second direction perpendicular to the first direction and a third portion extending in the second direction; a second gate wire including a first portion extending in the second direction and a third portion extending in the second direction; a first gate electrode pad; and a second gate electrode pad. The first portion of the second gate wire is between the first portion and the third portion of the first gate wire, and the third portion of the first gate wire is between the first portion and the third portion of the second gate wire.

Abstract: A semiconductor device according to the embodiment includes: a transistor region including a first trench, a first gate electrode provided in the first trench, a second trench, a second gate electrode provided in the second trench, a third trench, and a third gate electrode provided in the third trench; a diode region including a fifth trench and a conductive layer provided in the fifth trench; a boundary region including a fourth trench and a fourth gate electrode provided in the fourth trench, the boundary region being provided between the transistor region and the diode region; a first electrode pad electrically connected to the first gate electrode; a second electrode pad electrically connected to the second gate electrode; and a third electrode pad electrically connected to the third gate electrode and the fourth gate electrode.

Abstract: A semiconductor device includes a semiconductor part, first to fourth electrodes, and first and second insulating film. The first and second electrodes are provided on back and front surfaces of the semiconductor part, respectively. The third and fourth electrodes each extend into the semiconductor device form the front surface side. The third and fourth electrodes are electrically insulated from the semiconductor part by insulating films. The semiconductor part includes first to fourth layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The third layer of the second conductivity type is partially provided between the second layer and the second electrode. The fourth layer of the first conductivity type is provided in the second layer. The fourth layer is apart from the third layer.

Abstract: A semiconductor device includes a semiconductor part, first and second electrodes and first-third and second-third electrodes. The semiconductor part is provided between the first and second electrodes. The semiconductor part includes a first semiconductor layer of a first conductivity type, second and third semiconductor layers of a second conductivity type. The second and third semiconductor layers are arranged between the first layer and the second electrode. The first-third and second-third electrodes are provided in the semiconductor part. The second semiconductor layer is provided between the first-third electrode and the second-third electrode. The second electrode includes a contact portion extending into the second semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer between the contact portion and the second-third electrode. The second semiconductor layer includes a first portion facing the third semiconductor layer via the contact portion.

Abstract: A semiconductor device includes a first electrode, a plurality of unit element regions, and a partitioning region. Each of the unit element regions includes a first semiconductor part, a second electrode, and a first conductive part. The first semiconductor part includes first to third semiconductor regions. The first semiconductor region is located above the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The second electrode is located on the second and third semiconductor regions. The first conductive part faces the second semiconductor region via a first insulating film. At least a portion of the plurality of unit element regions includes a common pattern. The partitioning region includes a second semiconductor part and partitions the plurality of unit element regions. The second semiconductor part is continuous with the first semiconductor part.

Abstract: A semiconductor device includes a semiconductor part, a first electrode, first and second control electrodes. The first electrode and the first control electrode are provided in an active region. The second control electrode is provided in a termination region. The semiconductor part including first and third layers of a first conductivity type, and second and fourth layers of a second conductivity type. The first layer is provided in the active and termination regions. The second layer is provided between the first layer and the first electrode, and faces the first control electrode via a first insulating film. The third layer is provided between the second layer and the first electrode. The fourth-layers are provided on the first layer in the termination region. The first layer includes a portion extending between the fourth layers. The second control electrode faces the portion of the first layer via a second insulating film.

Abstract: S1?S2<S3 being satisfied, where S1 is a surface area of the first gate electrode and the third semiconductor layer facing each other via the first insulating film, S2 is a surface area of the second gate electrode and the third semiconductor layer facing each other via the second insulating film, and S3 is a surface area of the third gate electrode and the third semiconductor layer facing each other via the third insulating film.

Abstract: A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The semiconductor part includes first to seventh layers. The second of a second conductivity type is provided between the first layer of a first conductivity type and the first electrode. The third and fourth layers of the first conductivity type are arranged along the second layer between the second layer and the first electrode. The fifth layer of the second conductivity type is provided between the second electrode and the first layer. The sixth and seventh layers are arranged along the fifth layer between the first and fifth layers. The sixth and seventh layers include the first-conductivity-type impurities with first and second surface densities, respectively. The first surface density is greater than the second surface density.

Abstract: According to an embodiment a semiconductor device includes a semiconductor layer including first trenches and second trenches, a first gate electrode in the first trench, a second gate electrode in the second trench, a first gate electrode pad, a second gate electrode pad, a first wiring connecting the first gate electrode pad and the first gate electrode, and a second wiring connecting the second gate electrode pad and the second gate electrode. The semiconductor layer includes a first connection trench. Two first trenches adjacent to each other are connected to each other at end portions by the first connection trench. At least one of the second trenches is provided between the two first trenches. The second gate electrode in the at least one second trench is electrically connected to the second wiring between the two first trenches.

Abstract: According to one embodiment, a drive device includes a drive circuit configured to drive a semiconductor device. The semiconductor device includes first to fourth electrodes, a semiconductor member, and an insulating member. The semiconductor member includes first to fourth semiconductor region. The first semiconductor region includes first to third partial regions. The first semiconductor region is between the first electrode and the second semiconductor region. The third semiconductor region is between the first and second semiconductor regions. The fourth semiconductor region is between the first electrode and the first semiconductor region. The second electrode is electrically connected to the second semiconductor region. The first partial region is between the fourth semiconductor region and the third electrode. The second partial region is between the fourth semiconductor region and the fourth electrode.