Abstract: According to an embodiment a semiconductor device includes a semiconductor layer including first trenches and second trenches, a first gate electrode in the first trench, a second gate electrode in the second trench, a first gate electrode pad, a second gate electrode pad, a first wiring connecting the first gate electrode pad and the first gate electrode, and a second wiring connecting the second gate electrode pad and the second gate electrode. The semiconductor layer includes a first connection trench. Two first trenches adjacent to each other are connected to each other at end portions by the first connection trench. At least one of the second trenches is provided between the two first trenches. The second gate electrode in the at least one second trench is electrically connected to the second wiring between the two first trenches.

Abstract: According to one embodiment, a drive device includes a drive circuit configured to drive a semiconductor device. The semiconductor device includes first to fourth electrodes, a semiconductor member, and an insulating member. The semiconductor member includes first to fourth semiconductor region. The first semiconductor region includes first to third partial regions. The first semiconductor region is between the first electrode and the second semiconductor region. The third semiconductor region is between the first and second semiconductor regions. The fourth semiconductor region is between the first electrode and the first semiconductor region. The second electrode is electrically connected to the second semiconductor region. The first partial region is between the fourth semiconductor region and the third electrode. The second partial region is between the fourth semiconductor region and the fourth electrode.

Abstract: A semiconductor device includes a semiconductor part having a first surface and a second surface opposite to the first surface, a first electrode on the first surface, a second electrode on the second surface, first to third control electrodes between the first electrode and the semiconductor part. The first to third control electrodes are biased independently from each other. The semiconductor part includes a first layer of a first-conductivity-type, a second layer of a second-conductivity-type, a third layer of the first-conductivity-type and the fourth layer of the second-conductivity-type. The second layer is provided between the first layer and the first electrode. The third layer is selectively provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The second layer opposes the first to third control electrode with insulating films interposed.

Abstract: A semiconductor device includes a semiconductor part, a first electrode at a back surface of the semiconductor part; a second electrode at a front surface of the semiconductor part; third and fourth electrodes provided between the semiconductor part and the second electrode. The third and fourth electrodes are arranged in a first direction along the front surface of the semiconductor part. The third electrode is electrically insulated from the semiconductor part by a first insulating film. The third electrode is electrically insulated from the second electrode by a second insulating film. The fourth electrode is electrically insulated from the semiconductor part by a third insulating film. The fourth electrode is electrically isolated from the third electrode. the third and fourth electrodes extend into the semiconductor part. The fourth electrode includes a material having a larger thermal conductivity than a thermal conductivity of a material of the third electrode.

Abstract: A semiconductor device includes: a first electrode; a first semiconductor layer of first conductivity type provided on the first electrode; a second semiconductor layer of second conductivity type provided on the first semiconductor layer; a second electrode provided on the second semiconductor layer; a first trench reaching the first semiconductor layer from the second semiconductor layer; a first semiconductor region provided in the second semiconductor layer, the first semiconductor region being in contact with the first trench and the first semiconductor region having a higher concentration of impurities of second conductivity type than the second semiconductor layer; and a first insulating film provided in the second semiconductor layer and the first insulating film being in contact with the first semiconductor region.

Abstract: A semiconductor device includes a semiconductor part, first and second electrodes and a control electrode. The semiconductor part is provided between the first and second electrode. The semiconductor part includes first and third layers of a first conductivity type, and second, fourth and fifth layers of a second conductivity type. The first layer extends between the first and second electrodes. The second layer is provided between the first layer and the second electrode. The third semiconductor layer is provided between the second layer and the second electrode. The fourth layer is provided between the first layer and the first electrode. The semiconductor part includes an active region and a termination region. The active region includes the control electrode, the second layer, and the third layer. The termination region surrounds the active region. The fifth layer is provided in the first layer in the termination region.

Abstract: A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The control electrode is provided in a trench of the semiconductor part between the semiconductor part and the second electrode. The semiconductor part includes first to third layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The second layer is connected to the second electrode. The third layer of the second conductivity type is provided between the second layer and the control electrode. The third layer includes a second-conductivity-type impurity with a higher concentration than a second-conductivity-type impurity of the second layer. The third layer contacts the second electrode, and is electrically connected to the second electrode.

Abstract: A semiconductor device includes a semiconductor part having a first surface and a second surface opposite to the first surface, a first electrode on the first surface, a second electrode on the second surface, first to third control electrodes between the first electrode and the semiconductor part. The first to third control electrodes are biased independently from each other. The semiconductor part includes a first layer of a first-conductivity-type, a second layer of a second-conductivity-type, a third layer of the first-conductivity-type and the fourth layer of the second-conductivity-type. The second layer is provided between the first layer and the first electrode. The third layer is selectively provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The second layer opposes the first to third control electrode with insulating films interposed.

Abstract: A semiconductor element includes a semiconductor part, first to third electrodes and a control electrode. The first electrode is provided at a front side of the semiconductor part. The second and third electrodes are provided at a back side of the semiconductor part. The control electrode is provided between the semiconductor part and the first electrode. The semiconductor part includes first and third layers of a first conductivity type and second and fourth layers of a second conductivity type. The first layer is provided between the first and second electrodes and between the first and third electrodes. The first layer is connected to the third electrode at the back side. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer is provided between the second electrode and the first layer.

Abstract: A semiconductor device according to an embodiment includes a first trench, a first gate electrode in the first trench, a second trench, a second gate electrode provided in the second trench, a third trench, a third gate electrode in the third trench, a first electrode pad electrically connected to the first gate electrode, a second electrode pad electrically connected to the second gate electrode, and a third electrode pad electrically connected to the third gate electrode, in which a thickness of a conductive semiconductor region opposed to the third gate electrode is smaller than a thickness of a conductive semiconductor region opposed to the first gate electrode, and in which the thickness of the conductive semiconductor region opposed to the third gate electrode is smaller than a thickness of a conductive type semiconductor region opposed to the second gate electrode.

Abstract: A semiconductor device includes a semiconductor layer having first and second surfaces, a first electrode and a first gate electrode along the first surface, and a second electrode and a second gate electrode along the second surface. The layer includes a first type first region, a second type second region between the first region and the first surface and facing the first gate electrode, a first type third region between the second region and the first surface and contacting the first electrode, a second type fourth region between the first region and the second surface, facing the second gate electrode, and contacting the second electrode, and a first type fifth region between the fourth region and the second surface and contacting the second electrode. Transistors including the first and second gate electrodes have different threshold voltages that are both positive or negative.

Abstract: A semiconductor device includes a semiconductor part, a first electrode at a back surface of the semiconductor part; a second electrode at a front surface of the semiconductor part; third and fourth electrodes provided between the semiconductor part and the second electrode. The third and fourth electrodes are arranged in a first direction along the front surface of the semiconductor part. The third electrode is electrically insulated from the semiconductor part by a first insulating film. The third electrode is electrically insulated from the second electrode by a second insulating film. The fourth electrode is electrically insulated from the semiconductor part by a third insulating film. The fourth electrode is electrically isolated from the third electrode. the third and fourth electrodes extend into the semiconductor part. The fourth electrode includes a material having a larger thermal conductivity than a thermal conductivity of a material of the third electrode.

Abstract: A semiconductor device includes first and third semiconductor layers of a first conductivity type, and second, fourth and fifth semiconductor layers of a second conductivity type. The first semiconductor layer is provided on the fifth semiconductor layer. The second semiconductor layer is provided on the first semiconductor layer. The third and fourth semiconductor layers are arranged along the second semiconductor layer. In a plane parallel to an upper surface of the second semiconductor layer, the fourth semiconductor layer has a surface area greater than a surface area of the third semiconductor layer. The device further includes first to third electrodes, and first control electrode. The first to third electrodes are electrically connected to the third to fifth semiconductor layers, respectively. The first control electrode is provided in a first trench extending into the first semiconductor layer from an upper surface of the third semiconductor layer.

Abstract: A semiconductor device has a cell part and a terminal part set in the device. The terminal part encloses the cell part. The semiconductor device includes a first electrode, a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type, and an insulating layer. The first semiconductor layer is formed above the first electrode. The second semiconductor layer is provided in an upper portion of the first semiconductor layer, and has an impurity concentration profile along a vertical direction including a plurality of peaks. The insulating layer is provided on the second semiconductor layer.

Abstract: A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The control electrode is provided in a trench of the semiconductor part between the semiconductor part and the second electrode. The semiconductor part includes first to third layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The second layer is connected to the second electrode. The third layer of the second conductivity type is provided between the second layer and the control electrode. The third layer includes a second-conductivity-type impurity with a higher concentration than a second-conductivity-type impurity of the second layer. The third layer contacts the second electrode, and is electrically connected to the second electrode.

Abstract: A semiconductor device includes a first electrode, a second electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a fifth semiconductor region, a first gate electrode, and a second gate electrode. The first gate electrode faces the second semiconductor region via a first insulating film. The second gate electrode faces the second semiconductor region via a second insulating film and faces the second electrode via a third insulating film contacting the second insulating film. The fifth semiconductor region includes a boundary portion that electrically contacts the second electrode. A distance between an upper surface of the fourth semiconductor region and the first electrode is greater than a distance between the boundary portion and the first electrode.

Abstract: This semiconductor device includes: a semiconductor layer having a first face and a second face, the semiconductor layer including a first trench and a second trench in a first face side; a first gate electrode in the first trench; a first conductive layer in the first trench and between the first gate electrode and the second face, the first conductive layer being electrically separated from the first gate electrode; a second gate electrode in the second trench; a second conductive layer in the second trench and between the second gate electrode and the second face; a first electrode on a the first face side; a second electrode on a side of the second face; a first gate electrode pad being electrically connected to the first gate electrode; and a second gate electrode pad being electrically connected to the second gate electrode.

Abstract: A semiconductor device according to an embodiment includes: a first trench and a second trench extending in a first direction; a first gate electrode in the first trench; a second gate electrode in the second trench; a first gate wire including a first portion extending in a second direction perpendicular to the first direction and a third portion extending in the second direction; a second gate wire including a first portion extending in the second direction and a third portion extending in the second direction; a first gate electrode pad; and a second gate electrode pad. The first portion of the second gate wire is between the first portion and the third portion of the first gate wire, and the third portion of the first gate wire is between the first portion and the third portion of the second gate wire.

Abstract: A semiconductor device of embodiments includes: a transistor region including a semiconductor layer having a first face and a second face opposite to the first face, a first transistor having a first gate electrode provided on a first face side of the semiconductor layer, and a second transistor having a second gate electrode provided on a second face side of the semiconductor layer; and an adjacent region adjacent to the transistor region and including the semiconductor layer and a third transistor having a third gate electrode electrically connected to the second gate electrode and provided on the second face side of the semiconductor layer and the third transistor having an absolute value of a threshold voltage smaller than an absolute value of a threshold voltage of the second transistor.

Abstract: A semiconductor device includes a semiconductor part, a first electrode and control electrodes at the front side of the semiconductor part. The semiconductor part includes first to fourth layers, first and third layers being of a first conductivity type, second and fourth layers being of a second conductivity type. The control electrodes are provided in a plurality of trenches, respectively. The control electrodes include a first control electrode, and a second control electrode next to the first control electrode. The second layer is provided between the first layer and the first electrode. The third and fourth layers are provided between the second layer and the first electrode. The semiconductor part further includes a first region partially provided between the first and second layers. The first region is provided between the first and third layers, the first region including a material having a lower thermal conductivity than the first layer.