Patents by Inventor Tomoko Matsudai
Tomoko Matsudai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150236104Abstract: According one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode and being in contact with the first electrode; a second semiconductor layer including a first part and a second part, and the second part being contact with the first electrode, and the second semiconductor layer having an effective impurity concentration lower than an effective impurity concentration in the first semiconductor layer; a third semiconductor layer provided between the second semiconductor layer and the second electrode, and having an effective impurity concentration lower than an effective impurity concentration in the second semiconductor layer; and a fourth semiconductor layer provided between the third semiconductor layer and the second electrode, and being in contact with the second electrode.Type: ApplicationFiled: May 1, 2015Publication date: August 20, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tsuneo OGURA, Tomoko MATSUDAI, Yuuichi OSHINO, Yoshiko IKEDA, Kazutoshi NAKAMURA, Ryohei GEJO
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Patent number: 9059236Abstract: According to one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode; a second semiconductor layer provided between the first semiconductor layer and the second electrode, and the second semiconductor layer having a lower impurity concentration than the first semiconductor layer; a first semiconductor region provided between part of the second semiconductor layer and the second electrode; a second semiconductor region provided between a portion different from the part of the second semiconductor layer and the second electrode, and the second semiconductor region being in contact with the first semiconductor region; and a third semiconductor region provided between at least part of the first semiconductor region and the second electrode.Type: GrantFiled: August 29, 2013Date of Patent: June 16, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Tsuneo Ogura, Tomoko Matsudai, Yuichi Oshino, Shinichiro Misu, Yoshiko Ikeda, Kazutoshi Nakamura
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Patent number: 9054066Abstract: According one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode and being in contact with the first electrode; a second semiconductor layer including a first part and a second part, and the second part being contact with the first electrode, and the second semiconductor layer having an effective impurity concentration lower than an effective impurity concentration in the first semiconductor layer; a third semiconductor layer provided between the second semiconductor layer and the second electrode, and having an effective impurity concentration lower than an effective impurity concentration in the second semiconductor layer; and a fourth semiconductor layer provided between the third semiconductor layer and the second electrode, and being in contact with the second electrode.Type: GrantFiled: August 29, 2013Date of Patent: June 9, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Tsuneo Ogura, Tomoko Matsudai, Yuuichi Oshino, Yoshiko Ikeda, Kazutoshi Nakamura, Ryohei Gejo
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Publication number: 20150091055Abstract: A semiconductor device includes a first region of a first conductivity type, a collector electrode electrically connected to a first side of the first region, first and second gate electrodes and first and second conductor electrodes, each of the gate and conductor electrodes extending into the first region from a second side thereof that is opposite to the first side, an emitter electrode electrically connected to the conductor electrodes, and a second region of the first conductivity type, that is adjacent to the gate electrodes, electrically connected to the emitter electrode, and spaced from the first and second conductor electrodes.Type: ApplicationFiled: February 28, 2014Publication date: April 2, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Ryohei GEJO, Kazutoshi NAKAMURA, Tsuneo OGURA, Tomoko MATSUDAI
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Patent number: 8981473Abstract: According to one embodiment, in a dielectric isolation substrate, an insulating film having a first thickness is provided on a semiconductor substrate. A semiconductor layer of a first conductivity type having a second thickness is provided on the insulating film. An impurity diffusion layer of a second conductivity type is provided partially in a lower portion of the semiconductor layer and is in contact with the insulating film.Type: GrantFiled: March 2, 2012Date of Patent: March 17, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Ryo Wada, Kaori Yoshioka, Norio Yasuhara, Tomoko Matsudai, Yuichi Goto
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Publication number: 20140374791Abstract: A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region having a second conductivity type, a first insulating layer on the first and second semiconductor regions, and field plate electrodes are provided in the first insulating layer at different distances from the first semiconductor layer. A first field plate electrode is at a first distance, a second field plate electrode is at a second distance greater than the first distance, and a third field plate electrode is at a distance greater than the second distance. The first through third field plate electrodes are electrically connected to each other and the third electrode is electrically connected to the second semiconductor region.Type: ApplicationFiled: March 3, 2014Publication date: December 25, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tomoko MATSUDAI, Yuichi OSHINO, Keiko KAWAMURA, Bungo TANAKA
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Patent number: 8853775Abstract: In one embodiment, a semiconductor device includes a semiconductor substrate having first and second main surfaces, control electrodes disposed in trenches on the first main surface of the semiconductor substrate and extending in a first direction parallel to the first main surface, and control interconnects disposed on the first main surface of the semiconductor substrate and extending in a second direction perpendicular to the first direction. The semiconductor substrate includes a first semiconductor layer of a first conductivity type, second semiconductor layers of a second conductivity type on a surface of the first semiconductor layer on a first main surface side, third semiconductor layers of the first conductivity type disposed on surfaces of the second semiconductor layers on the first main surface side and extending in the second direction, and a fourth semiconductor layer of the second conductivity type on the second main surface of the semiconductor substrate.Type: GrantFiled: September 9, 2013Date of Patent: October 7, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Tsuneo Ogura, Kazutoshi Nakamura, Hideaki Ninomiya, Tomoko Matsudai, Yuichi Oshino
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Patent number: 8847309Abstract: According to one embodiment, a semiconductor device includes a base region of a second conductivity type, a drift region of a first conductivity type, an insulating layer, a drain region of the first conductivity type, a gate oxide film, a gate electrode, a first main electrode, and a second main electrode. The base region includes a source region of the first conductivity type. The drift region is adjacent to the base region. The insulating layer is provided from a surface to inside of the drift region. The drain region is provided in the surface of the drift region and opposed to the source region across the base region and the insulating layer. The gate oxide film is provided on a surface of the base region. The gate electrode is provided on the gate oxide film. The first main electrode is connected to the source region. The second main electrode is connected to the drain region.Type: GrantFiled: December 19, 2013Date of Patent: September 30, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Manji Obatake, Tomoko Matsudai
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Publication number: 20140284658Abstract: According to one embodiment, a semiconductor device includes a first and second electrode, a first, second, third and fourth semiconductor region, and a first intermediate metal film. The first region is provided above the first electrode and has a first impurity concentration. The second region is provided above the first region and has a second impurity concentration lower than the first impurity concentration. The third region is provided above the second region and has a third impurity concentration. The fourth region is provided above the second region and has a fourth impurity concentration lower than the third impurity concentration. The second electrode is provided above the third region and the fourth region and is in ohmic contact with the third region. The intermediate metal film is provided between the second electrode and the fourth region. The intermediate metal film forms Schottky junction with the fourth region.Type: ApplicationFiled: March 6, 2014Publication date: September 25, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tomoko Matsudai, Tsuneo Ogura, Yuuichi Oshino
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Publication number: 20140124832Abstract: According to one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode; a second semiconductor layer provided between the first semiconductor layer and the second electrode, and the second semiconductor layer having a lower impurity concentration than the first semiconductor layer; a first semiconductor region provided between part of the second semiconductor layer and the second electrode; a second semiconductor region provided between a portion different from the part of the second semiconductor layer and the second electrode, and the second semiconductor region being in contact with the first semiconductor region; and a third semiconductor region provided between at least part of the first semiconductor region and the second electrode.Type: ApplicationFiled: August 29, 2013Publication date: May 8, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tsuneo Ogura, Tomoko Matsudai, Yuichi Oshino, Shinichiro Misu, Yoshiko Ikeda, Kazutoshi Nakamura
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Publication number: 20140103432Abstract: According to one embodiment, a semiconductor device includes a base region of a second conductivity type, a drift region of a first conductivity type, an insulating layer, a drain region of the first conductivity type, a gate oxide film, a gate electrode, a first main electrode, and a second main electrode. The base region includes a source region of the first conductivity type. The drift region is adjacent to the base region. The insulating layer is provided from a surface to inside of the drift region. The drain region is provided in the surface of the drift region and opposed to the source region across the base region and the insulating layer. The gate oxide film is provided on a surface of the base region. The gate electrode is provided on the gate oxide film. The first main electrode is connected to the source region. The second main electrode is connected to the drain region.Type: ApplicationFiled: December 19, 2013Publication date: April 17, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Manji OBATAKE, Tomoko MATSUDAI
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Publication number: 20140084337Abstract: A collector layer of a first conductivity type is provided in the IGBT region and the boundary region and functions as a collector of the IGBT in the IGBT region. A cathode layer of a second conductivity type is provided in the diode region apart from the collector layer and functions as a cathode of the diode. A drift layer of the second conductivity type is provided in the IGBT region, the boundary region, and the diode region, the drift layer being provided on sides of the collector layer and the cathode layer opposite the first electrode. A diffusion layer of the first conductivity type is provided in the boundary region on a side of the drift layer opposite the first electrode.Type: ApplicationFiled: September 10, 2013Publication date: March 27, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tomoko Matsudai, Tsuneo Ogura, Kazutoshi Nakamura, Yuichi Oshino, Hideaki Ninomiya, Yoshiko Ikeda
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Publication number: 20140084336Abstract: According to one embodiment, an IGBT region includes: a collector layer of a first conductivity type, a drift layer of a second conductivity type, a body layer of the first conductivity type, and a second electrode extending to the drift layer and the body layer via a first insulating film in a stacking direction of a first electrode and the collector layer. A diode region includes: a cathode layer of the second conductivity type, the drift layer, an anode layer of the first conductivity type, and a conductive layer extending to the drift layer and the anode layer via a second insulating film in the stacking direction. The second electrode and the conductive layer are separated from one another at a predetermined distance.Type: ApplicationFiled: August 28, 2013Publication date: March 27, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tomoko Matsudai, Tadashi Matsuda, Kazutoshi Nakamura, Yuuichi Oshino
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Publication number: 20140077258Abstract: In one embodiment, a semiconductor device includes a semiconductor substrate having first and second main surfaces, control electrodes disposed in trenches on the first main surface of the semiconductor substrate and extending in a first direction parallel to the first main surface, and control interconnects disposed on the first main surface of the semiconductor substrate and extending in a second direction perpendicular to the first direction. The semiconductor substrate includes a first semiconductor layer of a first conductivity type, second semiconductor layers of a second conductivity type on a surface of the first semiconductor layer on a first main surface side, third semiconductor layers of the first conductivity type disposed on surfaces of the second semiconductor layers on the first main surface side and extending in the second direction, and a fourth semiconductor layer of the second conductivity type on the second main surface of the semiconductor substrate.Type: ApplicationFiled: September 9, 2013Publication date: March 20, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Tsuneo Ogura, Kazutoshi Nakamura, Hideaki Ninomiya, Tomoko Matsudai, Yuichi Oshino
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Publication number: 20140077261Abstract: An upper part of the termination region of the semiconductor substrate, an upper surface of the first diffusion layers and an upper surface of the first oxide film is etched in such a manner that the level of the upper surface of the semiconductor substrate in the termination region including the first oxide film and the first diffusion layers is lower than the level of the upper surface of the semiconductor substrate in the cell region. Then, a second oxide film is formed on the semiconductor substrate. An electrode is formed on the second oxide film so as to extend from the first region toward the cell region to the first diffusion layers in such a manner that the level of an upper surface of the electrode is lower than the level of the upper surface of the semiconductor substrate in the cell region.Type: ApplicationFiled: September 6, 2013Publication date: March 20, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yuichi Oshino, Tomoko Matsudai, Kazutoshi Nakamura, Shinichiro Misu, Takuma Hara
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Publication number: 20140070266Abstract: A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a pair of conductive bodies, a third semiconductor layer of the second conductivity type, and a fourth semiconductor layer of the first conductivity type. The second semiconductor layer is provided on the first semiconductor layer on the first surface side. The pair of conductive bodies are provided via an insulating film in a pair of first trenches extending across the second semiconductor layer from a surface of the second semiconductor layer to the first semiconductor layer. The third semiconductor layer is selectively formed on the surface of the second semiconductor layer between the pair of conductive bodies and has a higher second conductivity type impurity concentration in a surface of the third semiconductor layer than the second semiconductor layer.Type: ApplicationFiled: March 18, 2013Publication date: March 13, 2014Inventors: Tomoko MATSUDAI, Tsuneo OGURA, Yuichi OSHINO, Hideaki NINOMIYA, Kazutoshi NAKAMURA
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Publication number: 20140061875Abstract: According one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode and being in contact with the first electrode; a second semiconductor layer including a first part and a second part, and the second part being contact with the first electrode, and the second semiconductor layer having an effective impurity concentration lower than an effective impurity concentration in the first semiconductor layer; a third semiconductor layer provided between the second semiconductor layer and the second electrode, and having an effective impurity concentration lower than an effective impurity concentration in the second semiconductor layer; and a fourth semiconductor layer provided between the third semiconductor layer and the second electrode, and being in contact with the second electrode.Type: ApplicationFiled: August 29, 2013Publication date: March 6, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tsuneo OGURA, Tomoko MATSUDAI, Yuuichi OSHINO, Yoshiko IKEDA, Kazutoshi NAKAMURA, Ryohei GEJO
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Patent number: 8664692Abstract: According to one embodiment, a semiconductor device includes a first electrode, a first conductivity type cathode layer, a first conductivity type base layer, a second conductivity type anode layer, a second conductivity type semiconductor layer, a first conductivity type semiconductor layer, an buried body, and a second electrode. The first conductivity type semiconductor layer is contiguous to the second conductivity type semiconductor layer in a first direction, and extends on a surface of the anode layer in a second direction that intersects perpendicularly to the first direction. The buried body includes a bottom portion and a sidewall portion. The bottom portion is in contact with the base layer. The sidewall portion is in contact with the base layer, the anode layer, the second conductivity type semiconductor layer and the first conductivity type semiconductor layer. The buried body extends in the first direction.Type: GrantFiled: August 30, 2012Date of Patent: March 4, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Tsuneo Ogura, Tomoko Matsudai, Yuichi Oshino
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Patent number: 8637928Abstract: According to one embodiment, a semiconductor device includes a base region of a second conductivity type, a drift region of a first conductivity type, an insulating layer, a drain region of the first conductivity type, a gate oxide film, a gate electrode, a first main electrode, and a second main electrode. The base region includes a source region of the first conductivity type. The drift region is adjacent to the base region. The insulating layer is provided from a surface to inside of the drift region. The drain region is provided in the surface of the drift region and opposed to the source region across the base region and the insulating layer. The gate oxide film is provided on a surface of the base region. The gate electrode is provided on the gate oxide film. The first main electrode is connected to the source region. The second main electrode is connected to the drain region.Type: GrantFiled: March 21, 2011Date of Patent: January 28, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Manji Obatake, Tomoko Matsudai
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Publication number: 20130248882Abstract: In a semiconductor device, transistor cells and diode cells are formed on a single semiconductor substrate of a first conductivity type. A first semiconductor layer of a second conductivity type is formed in a transistor cell region and at a lower side of the substrate. A second semiconductor layer of the first conductivity type is formed in a region adjacent to the transistor cell region and at the lower side of the substrate. Gate electrodes are formed at an upper side of the substrate. A third semiconductor layer of the second conductivity type and a fourth semiconductor layer of the first conductivity type are formed between the gate electrodes. A fifth semiconductor layer of the first conductivity type is formed above the first semiconductor layer in the transistor cell region. A first and a second electrode are formed on both sides of the substrate.Type: ApplicationFiled: March 4, 2013Publication date: September 26, 2013Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tsuneo OGURA, Tomoko MATSUDAI, Yuichi OSHINO, Hideaki NINOMIYA