Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, and a fourth semiconductor region. The first semiconductor region is provided between the first and second electrodes. The second semiconductor region is provided between the first semiconductor region and the second electrode. The third semiconductor region is provided between the first semiconductor region and the second electrode, is provided beside the second semiconductor region in a second direction crossing a first direction from the first electrode toward the second electrode, and a portion of the first semiconductor region is positioned between the third and second semiconductor regions. The fourth semiconductor region is provided between the portion of the first semiconductor region and the second electrode and has a greater impurity concentration than the second and third semiconductor regions.

Abstract: According to one embodiment, a semiconductor device includes: a first semiconductor region; a second semiconductor region on the first semiconductor region; a third semiconductor region on the second semiconductor region; an fourth insulating film on the second semiconductor region and the third semiconductor region; a first electrode under the first semiconductor region; a second electrode on the fourth insulating film; a plurality of first contact regions extending in a first direction from the first electrode toward the second electrode in the fourth insulating film, and the plurality of first contact regions electrically connecting the third semiconductor region to the second electrode; a plurality of second contact regions extending in the first direction in the fourth insulating film, and one of the plurality of second contact regions between adjacent ones of the first contact regions; and a third electrode in the second semiconductor region via a first insulating film.

Abstract: A semiconductor device includes first electrode, first semiconductor layer of first conductivity type on the first electrode, second semiconductor layer of second conductivity type on the first semiconductor layer, third semiconductor layer of the first conductivity type on second semiconductor layer, fourth semiconductor layer of the second conductivity type selectively located on the third semiconductor layer, gate electrode through the third and fourth semiconductor layers and into the second semiconductor layer and insulated therefrom, second electrode on the fourth semiconductor layer, fifth semiconductor layer of the second conductivity type between the first electrode and the second semiconductor layer, sixth semiconductor layer of the first conductivity type on the second semiconductor layer contacting the second electrode, and seventh semiconductor layer of the first conductivity type in the second and sixth semiconductor layers, such that the bottom thereof is closer to the first electrode than the

Abstract: A semiconductor device in an embodiment includes a first region of a second conductivity type between a first electrode and a second electrode and a second region of a first conductivity type between the first region and the second electrode. a third region of the second conductivity type is between the second region and the second electrode. A fourth and fifth region of the first conductivity type are between the third semiconductor region and the second electrode. The fourth and fifth regions are adjacent to each other. A dopant concentration in the fifth region is less than a dopant concentration in the fourth region. A third electrode contacts the second region, the third region, the fourth region, and the fifth region via an insulating film.

Abstract: According to one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode; a second semiconductor layer provided between the first semiconductor layer and the second electrode, and the second semiconductor layer having a lower impurity concentration than the first semiconductor layer; a first semiconductor region provided between part of the second semiconductor layer and the second electrode; a second semiconductor region provided between a portion different from the part of the second semiconductor layer and the second electrode, and the second semiconductor region being in contact with the first semiconductor region; and a third semiconductor region provided between at least part of the first semiconductor region and the second electrode.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer, a second semiconductor layer provided in a portion on the first semiconductor layer, a first insulating layer provided on the first semiconductor layer on a terminal region side of the second semiconductor layer, a third semiconductor layer provided on the first semiconductor layer on the terminal region side of the first insulating layer, a second insulating layer provided on the first semiconductor layer on the terminal region side of the third semiconductor layer, a fourth semiconductor layer provided between the first semiconductor layer and the second insulating layer, and a plurality of field plate electrodes provided inside an inter-layer insulating film, the plurality of field plate electrodes having mutually-different distances from the first semiconductor layer.

Abstract: According one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode and being in contact with the first electrode; a second semiconductor layer including a first part and a second part, and the second part being contact with the first electrode, and the second semiconductor layer having an effective impurity concentration lower than an effective impurity concentration in the first semiconductor layer; a third semiconductor layer provided between the second semiconductor layer and the second electrode, and having an effective impurity concentration lower than an effective impurity concentration in the second semiconductor layer; and a fourth semiconductor layer provided between the third semiconductor layer and the second electrode, and being in contact with the second electrode.

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes, and a first semiconductor region provided between the first and second electrodes. A first element region includes a second semiconductor region provided between the first semiconductor region and the first electrode, a third semiconductor region provided between the first semiconductor region and the second electrode, a fourth semiconductor region provided between the third semiconductor region and the second electrode, and a third electrode provided in the first, third and fourth semiconductor regions. A second element region includes a fifth semiconductor region provided between the first semiconductor region and the first electrode, and a sixth semiconductor region provided between the first semiconductor region and the second electrode. An isolation region includes a seventh semiconductor region provided between the first semiconductor region and the second electrode.

Abstract: A semiconductor device includes first electrode, first semiconductor layer of first conductivity type on the first electrode, second semiconductor layer of second conductivity type on the first semiconductor layer, third semiconductor layer of the first conductivity type on second semiconductor layer, fourth semiconductor layer of the second conductivity type selectively located on the third semiconductor layer, gate electrode through the third and fourth semiconductor layers and into the second semiconductor layer and insulated therefrom, second electrode on the fourth semiconductor layer, fifth semiconductor layer of the second conductivity type between the first electrode and the second semiconductor layer, sixth semiconductor layer of the first conductivity type on the second semiconductor layer contacting the second electrode, and seventh semiconductor layer of the first conductivity type in the second and sixth semiconductor layers, such that the bottom thereof is closer to the first electrode than the

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a first gate electrode, a first region, and a second region. The third semiconductor region is provided on the second semiconductor region. The fourth semiconductor region is provided on the third semiconductor region. The first region is provided in the second semiconductor region. The first region is positioned between the first semiconductor region and the third semiconductor region. The second region is provided in the second semiconductor region. The second region is positioned between the first region and the gate electrode. A carrier density of the first conductivity type in the second region is higher than a carrier density of the first conductivity type in the first region.

Abstract: A semiconductor device formed on a substrate of a first conductivity type, including a base layer of a second conductivity disposed on a first face of the substrate, an anode layer with a higher dopant amount in a portion of the base layer, an IGBT region formed on the base layer, a diode region formed on the anode layer, a trench extending from the top of the IGBT and diode regions in to the substrate. The area occupied by the diode region is different from the area occupied by the IGBT region, but they share collector and emitter electrodes. The contact area between the diode anode layer and the emitter electrode may be adjusted by the arrangement of trenches.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer, a second semiconductor layer provided in a portion on the first semiconductor layer, a first insulating layer provided on the first semiconductor layer on a terminal region side of the second semiconductor layer, a third semiconductor layer provided on the first semiconductor layer on the terminal region side of the first insulating layer, a second insulating layer provided on the first semiconductor layer on the terminal region side of the third semiconductor layer, a fourth semiconductor layer provided between the first semiconductor layer and the second insulating layer, and a plurality of field plate electrodes provided inside an inter-layer insulating film, the plurality of field plate electrodes having mutually-different distances from the first semiconductor layer.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first semiconductor layer, a first semiconductor region, a second semiconductor region, and an insulating layer. The first semiconductor layer is provided between the first electrode and the second electrode, and contacts the first electrode. The first semiconductor region is provided between the first semiconductor layer and the second electrode, and contacts the second electrode. The second semiconductor region is provided between the first semiconductor region and the second electrode, and contacts the second electrode. An impurity concentration of the second semiconductor region is higher than an impurity concentration of the first semiconductor region. An insulating layer has one end contacting the second electrode and the other end positioned in the first semiconductor layer.

Abstract: A collector layer of a first conductivity type is provided in the IGBT region and the boundary region and functions as a collector of the IGBT in the IGBT region. A cathode layer of a second conductivity type is provided in the diode region apart from the collector layer and functions as a cathode of the diode. A drift layer of the second conductivity type is provided in the IGBT region, the boundary region, and the diode region, the drift layer being provided on sides of the collector layer and the cathode layer opposite the first electrode. A diffusion layer of the first conductivity type is provided in the boundary region on a side of the drift layer opposite the first electrode.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, an insulating region, and a third semiconductor region of the first conductivity type. The first semiconductor region is provided between the first electrode and the second electrode, and is in contact with the first electrode. The second semiconductor region is provided between the first semiconductor region and the second electrode. The second semiconductor region is in contact with the second electrode. The insulating region extends in a direction from the second electrode toward the first semiconductor region. The insulating region is in contact with the second electrode. The third semiconductor region is provided between the second semiconductor region and the insulating region.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first semiconductor region, a second semiconductor region, an insulating region, and a third semiconductor region. The first semiconductor region is of a first conductivity type. The first semiconductor region is provided between the first electrode and the second electrode, and contacts the first electrode. The second semiconductor region is of a second conductivity type. The second conductor region is provided between the first semiconductor region and the second electrode. The insulating region extends from the second electrode to a side of the first semiconductor region. The third semiconductor region is of the first conductivity type. The third semiconductor region is provided in at least a portion of a region between the second semiconductor region and the insulating region, and contacts the first semiconductor region.

Abstract: According to one embodiment, a semiconductor device including: a first electrode; a second electrode having a portion extending toward the first electrode side; a first semiconductor layer; a first semiconductor region provided between the first semiconductor layer and the second electrode; a second semiconductor region provided between the first semiconductor region and the second electrode, and the second semiconductor region being in contact with the portion; a third electrode provided between the first electrode and the portion, and the third electrode being connected to the portion; a fourth electrode provided on the first semiconductor layer, the first semiconductor region, and the second semiconductor region via a second insulating film; and a third semiconductor region provided between the first semiconductor region and the second semiconductor region, and the third semiconductor region having a higher impurity concentration than the first semiconductor region.

Abstract: A semiconductor device in an embodiment includes a first region of a second conductivity type between a first electrode and a second electrode and a second region of a first conductivity type between the first region and the second electrode. a third region of the second conductivity type is between the second region and the second electrode. A fourth and fifth region of the first conductivity type are between the third semiconductor region and the second electrode. The fourth and fifth regions are adjacent to each other. A dopant concentration in the fifth region is less than a dopant concentration in the fourth region. A third electrode contacts the second region, the third region, the fourth region, and the fifth region via an insulating film.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first semiconductor layer, a first semiconductor region, a second semiconductor region, and an insulating layer. The first semiconductor layer is provided between the first electrode and the second electrode, and contacts the first electrode. The first semiconductor region is provided between the first semiconductor layer and the second electrode, and contacts the second electrode. The second semiconductor region is provided between the first semiconductor region and the second electrode, and contacts the second electrode. An impurity concentration of the second semiconductor region is higher than an impurity concentration of the first semiconductor region. An insulating layer has one end contacting the second electrode and the other end positioned in the first semiconductor layer.

Abstract: According to one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode; a second semiconductor layer provided between the first semiconductor layer and the second electrode, and the second semiconductor layer having a lower impurity concentration than the first semiconductor layer; a first semiconductor region provided between part of the second semiconductor layer and the second electrode; a second semiconductor region provided between a portion different from the part of the second semiconductor layer and the second electrode, and the second semiconductor region being in contact with the first semiconductor region; and a third semiconductor region provided between at least part of the first semiconductor region and the second electrode.