Abstract: For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.

Abstract: In a two-transistor gain cell structure, a semiconductor memory device capable of stable reading without malfunction and having small-area memory cells is provided. In a two-transistor gain cell memory having a write transistor and a read transistor, a write word line, a read word line, a write bit line, and a read bit line are separately provided, and voltages to be applied are independently set. Furthermore, a memory cell is connected to the same read word line and write bit line as those of an adjacent memory cell.

Abstract: A semiconductor device includes a sense amplifier and a decoder provided on a semiconductor substrate together with memory cells provided above the sense amplifier and the decoder. Each of the memory cells includes a channel region, in which current flows in a direction perpendicular to a surface of the semiconductor substrate, a charge accumulation region provided along the channel region, and an insulator film provided between the channel region and the charge accumulation region.

Abstract: After forming a source-drain material film on an insulator layer, an opening portion reaching the insulator layer is formed in the source-drain material film. Then, a channel having desired thickness and a gate insulator are sequentially formed on the insulator layer and the source-drain material film in the opening portion. Thereafter, a gate material film embedding the opening portion is formed on the gate insulator. Subsequently, a cap film is formed on the gate material film, thereby forming the gate made of the gate material film. Then, a mask layer is formed on the source-drain material film. Next, the source-drain material film not protected by the mask layer is removed while protecting the gate by the cap film, thereby leaving the source-drain material film on both sides of the gate. The source-drain material film on one side becomes the source and that on the other side becomes the drain.

Abstract: A method for driving a plasma display panel, including a plurality of display electrode pairs and a plurality of address electrodes, and which includes at least an address period and a sustain discharge period. In the address period, performing address processing, between the address electrodes and a display electrode configured as either a set of odd or even numbered display electrodes, sequentially to all of one of the sets of display electrode pairs, and thereafter address processing, between the address electrodes and a display electrode configured as the other set of display electrode pairs, sequentially to all of the other set of display electrode pairs. In the sustain discharge period, supplying at least one first sustain discharge pulse to the one set of display electrode pairs, and supplying at least one second sustain discharge pulse to the other set of display electrode pairs.

Abstract: Disclosed is a non-volatile semiconductor memory device that uses a inversion layer provided on a semiconductor substrate as a data line. The memory device can reduce variation of characteristics among memory cells and can reduce bit cost. A plurality of assist gates are formed in the upper part of a p-type well through a gate oxide film. In the upper part of an interlayer insulator that covers those assist gates are formed word lines that are used as control electrodes. The width of those word lines is, for example, 0.1 ?m, and each word line is separated from its adjacent word lines by a side wall spacer that is a silicon oxide film having a thickness of about 20 nm.

Abstract: A semiconductor device includes a sense amplifier and a decoder provided on a semiconductor substrate together with memory cells provided above the sense amplifier and the decoder. Each of the memory cells includes a channel region, in which current flows in a direction perpendicular to a surface of the semiconductor substrate, a charge accumulation region provided along the channel region, and an insulator film provided between the channel region and the charge accumulation region.

Abstract: A color image printer includes a print engine (13) for effecting a laser scanning exposure and a test print managing section (51) for managing control for outputting a test print through the print engine for use in image quality adjustment. The test print (TP) includes a plurality of sets of horizontal stripe test patterns having a plurality of horizontal lines extending in the main scanning direction and a plurality of sets of vertical stripe test patterns having a plurality of vertical lines extending in the sub scanning direction. The horizontal stripe test patterns and the vertical stripe test patterns are arranged in alternation. And, the horizontal lines are formed with a gradation value set in advance for each horizontal stripe test pattern. The vertical lines are formed with a gradation value set in advance for each vertical stripe test pattern.

Abstract: A method of gradation correction for laser scanning exposure is effected, based on measured density values of a test print (TP) including a horizontal stripe test pattern comprised of a plurality of horizontal lines extending in the main scanning direction and a vertical stripe pattern comprised of a plurality of vertical lines extending in the sub scanning direction. The includes the steps of calculating, based on the measured density values, a rising correction amount for main scanning rising correction of adding a rising correction component to one dot after rising of a modulated laser in order to reduce density difference between the horizontal line and the vertical line and calculating, based on the measured density values, a falling correction amount for main scanning falling correction of adding a falling correction component to one dot after rising of the modulated laser in order to reduce the density difference between the horizontal line and the vertical line.

Abstract: A semiconductor device includes a sense amplifier and a decoder provided on a semiconductor substrate together with memory cells provided above the sense amplifier and the decoder. Each of the memory cells includes a channel region, in which current flows in a direction perpendicular to a surface of the semiconductor substrate, a charge accumulation region provided along the channel region, and an insulator film provided between the channel region and the charge accumulation region.

Abstract: In a two-transistor gain cell structure, a semiconductor memory device capable of stable reading without malfunction and having small-area memory cells is provided. In a two-transistor gain cell memory having a write transistor and a read transistor, a write word line, a read word line, a write bit line, and a read bit line are separately provided, and voltages to be applied are independently set. Furthermore, a memory cell is connected to the same read word line and write bit line as those of an adjacent memory cell.

Abstract: In a two-transistor gain cell structure, a semiconductor memory device capable of stable reading without malfunction and having small-area memory cells is provided. In a two-transistor gain cell memory having a write transistor and a read transistor, a write word line, a read word line, a write bit line, and a read bit line are separately provided, and voltages to be applied are independently set. Furthermore, a memory cell is connected to the same read word line and write bit line as those of an adjacent memory cell.

Abstract: Flash memory is rapidly decreasing in price. There is a demand for a new memory system that permits size reduction and suits multiple-value memory. A flash memory of AND type suitable for multiple-value memory with multiple-level threshold values can be made small in area if the inversion layer is utilized as the wiring; however, it suffers the disadvantage of greatly varying in writing characteristics from cell to cell. Another promising method of realizing multiple-value memory is to change the storage locations. This method, however, poses a problem with disturbance at the time of operation. The present invention provides one way to realize a semiconductor memory device with reduced cell-to-cell variation in writing characteristics.

Abstract: After forming a source-drain material film on an insulator layer, an opening portion reaching the insulator layer is formed in the source-drain material film. Then, a channel having desired thickness and a gate insulator are sequentially formed on the insulator layer and the source-drain material film in the opening portion. Thereafter, a gate material film embedding the opening portion is formed on the gate insulator. Subsequently, a cap film is formed on the gate material film, thereby forming the gate made of the gate material film. Then, a mask layer is formed on the source-drain material film. Next, the source-drain material film not protected by the mask layer is removed while protecting the gate by the cap film, thereby leaving the source-drain material film on both sides of the gate. The source-drain material film on one side becomes the source and that on the other side becomes the drain.

Abstract: The present invention is a semiconductor memory device having a logic block and a memory block on the same chip. In the memory device, unit memory cells each include at least two transistors, one of which is a write transistor for storing an electric charge into and releasing it from an electric charge storage node, and the other is a read transistor whose conductance in a channel region provided between a source and drain of the read transistor is modulated dependently on the amount of electric charge stored into or released from the electric charge storage node by the write transistor. The read transistor has a gate-insulating film thicker than that of a transistor provided in the logic block, and uses the same diffusion layer structure as that of the logic block.

Abstract: A semiconductor device includes a sense amplifier and a decoder provided on a semiconductor substrate together with memory cells provided above the sense amplifier and the decoder. Each of the memory cells includes a channel region, in which current flows in a direction perpendicular to a surface of the semiconductor substrate, a charge accumulation region provided along the channel region, and an insulator film provided between the channel region and the charge accumulation region.

Abstract: PS control sections MC1, MC2 configured to independently control the operations in process ships PS1, PS2 are provided respectively, and an LM control section MC3 configured to control the operation in a loader module LM is provided independently. With this structure, the operations of the process ships PS1, PS2 and the loader module LM can be checked while the process ships PS1, PS2 are not coupled to the loader module LM.

Abstract: A semiconductor memory device includes a plurality of memory cells, each including, a source region formed of a semiconductor material, a drain region formed of the semiconductor material, and a first region formed of the semiconductor material and located between the source region and the drain region. First and second insulator films sandwich the first region and a first gate electrode is connected to the first region through the first insulator film. In this arrangement, the first region is adapted to accumulate charges corresponding to stored information.

Abstract: A data processor includes an authentication function for judging access right. The data processor further includes a nonvolatile memory cell array formed on an insulator film or a chip, and a conductor layer provided between a logic circuit for the authentication and the nonvolatile memory. The nonvolatile memory can store at least part of authentication information or an authentication program.

Abstract: A memory cell with a small surface area is fabricated by forming source lines and data lines above and below and by running the channels to face up and down. The local data lines for each vertically stacked memory cell are connected to a global data line by way of separate selection by a molecular oxide semiconductor, and use of a large surface area is avoided by making joint use of peripheral circuits such as global data lines and sensing amplifiers by performing read and write operations in a timed multiplex manner. Moreover, data lines in multi-layers and memory cells (floating electrode cell) which are non-destructive with respect to readout are utilized to allow placement of memory cells at all intersecting points of word lines and data lines while having a folded data line structure. An improved noise tolerance is attained by establishing a standard threshold voltage for identical dummy cells even in any of the read verify, write verify and erase verify operations.