Abstract: A memory device is provided that includes a memory array with memory cells and a row decoder connected to the memory array. The row decoder is configured to select a word line connected to the memory cells. Additionally included is a word line voltage generator that is configured to generate a selected word line voltage based on a difference between a constant voltage that is substantially independent of a temperature change and a voltage that varies in proportion to an absolute temperature, where an absence of the voltage that varies in proportion to the absolute temperature corresponds to the absolute temperature of absolute zero.

Abstract: In a non-volatile memory programming scheme where the memory cells are programmed in two or more sequential programming passes, when there is insufficient host data to program at least some of the memory cells during the second pass, some of the memory cells may be programmed to the wrong threshold voltage. This can be prevented by modifying the programming scheme so that this does not occur. In one implementation, this is accomplished by choosing a code scheme, which does not cause the memory cells to be programmed to the wrong threshold voltage during the second programming pass, or by programming the memory cells in accordance with substitute data that would not cause the cells to be programmed to an erroneous state.

Abstract: In a non-volatile memory programming scheme where the memory cells are programmed in two or more sequential programming passes, when there is insufficient host data to program at least some of the memory cells during the second pass, some of the memory cells may be programmed to the wrong threshold voltage. This can be prevented by modifying the programming scheme so that this does not occur. In one implementation, this is accomplished by choosing a code scheme, which does not cause the memory cells to be programmed to the wrong threshold voltage during the second programming pass, or by programming the memory cells in accordance with substitute data that would not cause the cells to be programmed to an erroneous state.

Abstract: In a non-volatile memory programming scheme where the memory cells are programmed in two or more sequential programming passes, when there is insufficient host data to program at least some of the memory cells during the second pass, some of the memory cells may be programmed to the wrong threshold voltage. This can be prevented by modifying the programming scheme so that this does not occur. In one implementation, this is accomplished by choosing a code scheme, which does not cause the memory cells to be programmed to the wrong threshold voltage during the second programming pass, or by programming the memory cells in accordance with substitute data that would not cause the cells to be programmed to an erroneous state.

Abstract: A cathode ray tube having degaussing coils attached to an outer side of a glass vessel of a funnel part of a main body of the cathode ray tube, in which the degaussing coils each include a flattened part, extended along the outer front surface at a front side of a funnel part, a circular part having a circular cross-section and a transition part interconnecting the end parts of the flattened part and the circular part and changed in cross-section shape from a flattened rectangle to a circle. The degaussing coil may has shape flattened partially to reduce the outer size of the cathode ray tube and includes a plastic case for retaining the coil in the flattened shape. The degaussing coil is stabilized in shape and is not deformed during transport while its attachability with respect to the cathode ray tube may be improved.