Patents by Inventor Toru Tatsumi
Toru Tatsumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8524617Abstract: A method for manufacturing a dielectric film having a high dielectric constant is provided. The method is a method for forming, on a substrate, a dielectric film including a metal oxide containing O and elements A and B, wherein the element A comprises Hf or a mixture of Hf and Zr and the element B comprises Al or Si, which includes the steps of: forming a metal oxide having an amorphous structure which has a molar ratio between element A and element B, B/(A+B) of 0.02?(B/(A+B))?0.095 and a molar ratio between element A and O, O/A of 1.0<(O/A)<2.0; and annealing the metal oxide having the amorphous structure at 700° C. or more to form a metal oxide containing a crystal phase with a cubic crystal content of 80% or more.Type: GrantFiled: February 26, 2010Date of Patent: September 3, 2013Assignee: Canon Anelva CorporationInventors: Takashi Nakagawa, Naomu Kitano, Toru Tatsumi
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Patent number: 8415753Abstract: This invention provides a semiconductor device having a field effect transistor comprising a gate electrode comprising a metal nitride layer and a polycrystalline silicon layer, and the gate electrode is excellent in thermal stability and realizes a desired work function. In the semiconductor device, a gate insulating film 6 on a silicon substrate 5 has a high-permittivity insulating film formed of a metal oxide, a metal silicate, a metal oxide introduced with nitrogen, or a metal silicate introduced with nitrogen, the gate electrode has a first metal nitride layer 7 provided on the gate insulating film 6 and containing Ti and N, a second metal nitride layer 8 containing Ti and N, and a polycrystalline silicon layer 9, in the first metal nitride layer 7, a molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X1 is 1.1<X1 <1.8, and in the second metal nitride layer 8, the molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X2 is 1.Type: GrantFiled: April 28, 2010Date of Patent: April 9, 2013Assignee: Canon Anelva CorporationInventors: Takashi Nakagawa, Naomu Kitano, Kazuaki Matsuo, Motomu Kosuda, Toru Tatsumi
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Patent number: 8288234Abstract: To provide a method of manufacturing a dielectric film having a high dielectric constant. In an embodiment of the present invention, an HfN/Hf laminated film is formed on a substrate on which a thin silicon oxide film is formed and a dielectric film of a metal nitride made of a mixture of Hf, Si, O and N is manufactured by annealing treatment. According to the present invention, it is possible to (1) reduce an EOT, (2) reduce a leak current to Jg=1.0×10?1 A/cm2 or less, (3) suppress hysteresis caused by the generation of fixed charges, and (4) prevent an increase in EOT even if heat treatment at 700° C. or more is performed and obtain excellent heat resistance.Type: GrantFiled: July 21, 2010Date of Patent: October 16, 2012Assignee: Canon Anelva CorporationInventors: Takuya Seino, Takashi Nakagawa, Naomu Kitano, Toru Tatsumi
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Patent number: 8269303Abstract: The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode.Type: GrantFiled: March 9, 2009Date of Patent: September 18, 2012Assignee: NEC CorporationInventors: Junichi Fujikata, Toru Tatsumi, Akihito Tanabe, Jun Ushida, Daisuke Okamoto, Kenichi Nishi
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Publication number: 20120199919Abstract: A gate electrode achieves a desired work function in a semiconductor device including a field-effect transistor equipped with a gate electrode composed of a metal nitride layer. The semiconductor device includes a silicon substrate and a field-effect transistor provided on the silicon substrate and having a gate insulating film and a gate electrode provided on the gate insulating film. The gate insulating film includes a high-permittivity insulating film formed of a metal oxide, a metal silicate, a metal oxide introduced with nitrogen, or a metal silicate introduced with nitrogen, and the gate electrode includes at least a metal nitride layer containing Ti and N. At least a part which is in contact with the gate insulating film of the metal nitride layer has a molar ratio between Ti and N (N/Ti ratio) of not less than 1.15 and a film density of not less than 4.7 g/cc.Type: ApplicationFiled: July 29, 2010Publication date: August 9, 2012Applicant: CANON ANELVA CORPORATIONInventors: Takashi Nakagawa, Naomu Kitano, Kazuaki Matsuo, Motomu Kosuda, Toru Tatsumi
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Patent number: 8203176Abstract: To make it possible to significantly suppress the leakage current in a semiconductor device having a capacitor structure using a dielectric film. There is provided a composite oxide dielectric which is mainly composed of Zr, Al and O, and which has a composition ratio of Zr and Al in a range of (1?x):x where 0.01?x?0.15, and has a crystal structure. When the dielectric is set to have the Al composition in the above described range and is crystallized, the relative dielectric constant of the dielectric can be significantly increased. When the dielectric is used as a dielectric film of a capacitor of a semiconductor device, the leakage current of the capacitor can be significantly reduced.Type: GrantFiled: February 4, 2008Date of Patent: June 19, 2012Assignee: Renesas Electronics CorporationInventors: Takashi Nakagawa, Toru Tatsumi, Nobuyuki Ikarashi, Makiko Oshida
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Patent number: 8178934Abstract: The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015?(B/(A+B+N))?0.095 and N/(A+B+N) has a range of 0.045?(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0<(O/A)<2.0, and having a noncrystalline structure; and a step of performing an annealing treatment at 700° C. or higher on the metallic oxynitride having a noncrystalline structure to form a metallic oxynitride including a crystalline phase with a cubical crystal incorporation percentage of 80% or higher.Type: GrantFiled: November 23, 2010Date of Patent: May 15, 2012Assignee: Canon Anelva CorporationInventors: Naomu Kitano, Takashi Nakagawa, Toru Tatsumi
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Publication number: 20120043617Abstract: This invention provides a semiconductor device having a field effect transistor comprising agate electrode comprising a metal nitride layer and a polycrystalline silicon layer, and the gate electrode is excellent in thermal stability and realizes a desired work function. In the semiconductor device, a gate insulating film 6 on a silicon substrate 5 has a high-permittivity insulating film formed of a metal oxide, a metal silicate, a metal oxide introduced with nitrogen, or a metal silicate introduced with nitrogen, the gate electrode has a first metal nitride layer 7 provided on the gate insulating film 6 and containing Ti and N, a second metal nitride layer 8 containing Ti and N, and a polycrystalline silicon layer 9, in the first metal nitride layer 7, a molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X1 is 1.1<X1<1.8, and in the second metal nitride layer 8, the molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X2 is 1.Type: ApplicationFiled: April 28, 2010Publication date: February 23, 2012Applicant: CANON ANELVA CORPORATIONInventors: Takashi Nakagawa, Naomu Kitano, Kazuaki Matsuo, Motomu Kosuda, Toru Tatsumi
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Publication number: 20120021612Abstract: A method for manufacturing a dielectric film having a high dielectric constant is provided. The method is a method for forming, on a substrate, a dielectric film including a metal oxide containing O and elements A and B, wherein the element A comprises Hf or a mixture of Hf and Zr and the element B comprises Al or Si, which includes the steps of: forming a metal oxide having an amorphous structure which has a molar ratio between element A and element B, B/(A+B) of 0.02?(B/(A+B))?0.095 and a molar ratio between element A and O, O/A of 1.0<(O/A)<2.0; and annealing the metal oxide having the amorphous structure at 700° C. or more to form a metal oxide containing a crystal phase with a cubic crystal content of 80% or more.Type: ApplicationFiled: February 26, 2010Publication date: January 26, 2012Applicant: C/O CANON ANELVA CORPORATIONInventors: Takashi Nakagawa, Naomu Kitano, Toru Tatsumi
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Patent number: 8053311Abstract: The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film (103) including a composite oxynitride containing an element A made of Hf, an element B made of Al or Si, and N and O, wherein mole fractions of the element A, the element B, and N expressed as B/(A+B+N) range from 0.015 to 0.095 and N/(A+B+N) equals or exceeds 0.045, and has a crystalline structure.Type: GrantFiled: September 10, 2010Date of Patent: November 8, 2011Assignee: Canon Anelva CorporationInventors: Takashi Nakagawa, Naomu Kitano, Toru Tatsumi
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Patent number: 8030694Abstract: The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film (103) including a composite oxynitride containing an element A made of Hf, an element B made of Al or Si, and N and O, wherein mole fractions of the element A, the element B, and N expressed as B/(A+B+N) range from 0.015 to 0.095 and N/(A+B+N) equals or exceeds 0.045, and has a crystalline structure.Type: GrantFiled: April 14, 2010Date of Patent: October 4, 2011Assignee: Canon Anelva CorporationInventors: Takashi Nakagawa, Naomu Kitano, Toru Tatsumi
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Patent number: 7968463Abstract: A formation method of a metallic compound layer includes preparing, in a chamber, a substrate having a surface on which a semiconductor material of silicon, germanium, or silicon germanium is exposed, and forming a metallic compound layer, includes: supplying a raw material gas containing a metal for forming a metallic compound with the semiconductor material to the chamber; heating the substrate to a temperature at which the raw material gas is pyrolyzed; and forming a metallic compound layer by reaction of the metal with the semiconductor material so that no layer of the metal is deposited on the substrate. A manufacturing method of a semiconductor device employs this formation method of a metallic compound layer.Type: GrantFiled: May 21, 2007Date of Patent: June 28, 2011Assignee: Renesas Electronics CorporationInventors: Takashi Nakagawa, Toru Tatsumi, Makiko Oshida, Nobuyuki Ikarashi, Kensuke Takahashi, Kenzo Manabe
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Publication number: 20110064642Abstract: The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015?(B/(A+B+N))?0.095 and N/(A+B+N) has a range of 0.045?(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0<(O/A)<2.0, and having a noncrystalline structure; and a step of performing an annealing treatment at 700° C. or higher on the metallic oxynitride having a noncrystalline structure to form a metallic oxynitride including a crystalline phase with a cubical crystal incorporation percentage of 80% or higher.Type: ApplicationFiled: November 23, 2010Publication date: March 17, 2011Applicant: CANON ANELVA CORPORATIONInventors: Naomu Kitano, Takashi Nakagawa, Toru Tatsumi
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Publication number: 20110027979Abstract: To provide a method of manufacturing a dielectric film having a high dielectric constant. In an embodiment of the present invention, an HfN/Hf laminated film is formed on a substrate on which a thin silicon oxide film is formed and a dielectric film of a metal nitride made of a mixture of Hf, Si, O and N is manufactured by annealing treatment. According to the present invention, it is possible to (1) reduce an EOT, (2) reduce a leak current to Jg=1.0×10?1 A/cm2 or less, (3) suppress hysteresis caused by the generation of fixed charges, and (4) prevent an increase in EOT even if heat treatment at 700° C. or more is performed and obtain excellent heat resistance.Type: ApplicationFiled: July 21, 2010Publication date: February 3, 2011Applicant: CANON ANELVA CORPORATIONInventors: Takuya Seino, Takashi Nakagawa, Naomu Kitano, Toru Tatsumi
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Publication number: 20110012221Abstract: The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode.Type: ApplicationFiled: March 9, 2009Publication date: January 20, 2011Inventors: Junichi Fujikata, Toru Tatsumi, Akihito Tanabe, Jun Ushida, Daisuke Okamoto, Kenichi Nishi
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Patent number: 7867847Abstract: The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015?(B/A+B+N))?0.095 and N/(A+B+N) has a range of 0.045?(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0<(O/A)<2.0, and having a noncrystalline structure; and a step of performing an annealing treatment at 700° C. or higher on the metallic oxynitride having a noncrystalline structure to form a metallic oxynitride including a crystalline phase with a cubical crystal incorporation percentage of 80% or higher.Type: GrantFiled: April 16, 2010Date of Patent: January 11, 2011Assignee: Canon Anelva CorporationInventors: Naomu Kitano, Takashi Nakagawa, Toru Tatsumi
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Publication number: 20100330813Abstract: The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film (103) including a composite oxynitride containing an element A made of Hf, an element B made of Al or Si, and N and O, wherein mole fractions of the element A, the element B, and N expressed as B/(A+B+N) range from 0.015 to 0.095 and N/(A+B+N) equals or exceeds 0.045, and has a crystalline structure.Type: ApplicationFiled: September 10, 2010Publication date: December 30, 2010Applicant: CANON ANELVA CORPORATIONInventors: Takashi Nakagawa, Naomu Kitano, Toru Tatsumi
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Publication number: 20100320520Abstract: To make it possible to significantly suppress the leakage current in a semiconductor device having a capacitor structure using a dielectric film. There is provided a composite oxide dielectric which is mainly composed of Zr, Al and O, and which has a composition ratio of Zr and Al in a range of (1?x):x where 0.01?x?0.15, and has a crystal structure. When the dielectric is set to have the Al composition in the above described range and is crystallized, the relative dielectric constant of the dielectric can be significantly increased. When the dielectric is used as a dielectric film of a capacitor of a semiconductor device, the leakage current of the capacitor can be significantly reduced.Type: ApplicationFiled: February 4, 2008Publication date: December 23, 2010Inventors: Takashi Nakagawa, Toru Tatsumi, Nobuyuki Ikarashi, Makiko Oshida
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Publication number: 20100244192Abstract: The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film (103) including a composite oxynitride containing an element A made of Hf, an element B made of Al or Si, and N and O, wherein mole fractions of the element A, the element B, and N expressed as B/(A+B+N) range from 0.015 to 0.095 and N/(A+B+N) equals or exceeds 0.045, and has a crystalline structure.Type: ApplicationFiled: April 14, 2010Publication date: September 30, 2010Applicant: CANON ANELVA CORPORATIONInventors: Takashi Nakagawa, Naomu Kitano, Toru Tatsumi
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Publication number: 20100221885Abstract: The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015?(B/A+B+N))?0.095 and N/(A+B+N) has a range of 0.045?(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0<(O/A)<2.0, and having a noncrystalline structure; and a step of performing an annealing treatment at 700° C. or higher on the metallic oxynitride having a noncrystalline structure to form a metallic oxynitride including a crystalline phase with a cubical crystal incorporation percentage of 80% or higher.Type: ApplicationFiled: April 16, 2010Publication date: September 2, 2010Applicant: CANON ANELVA CORPORATIONInventors: Naomu Kitano, Takashi Nakagawa, Toru Tatsumi