Abstract: A thin film transistor comprising: a substrate; a gate electrode on the substrate; a gate insulation film on the gate electrode; an oxide semiconductor layer on the gate insulation film; a channel protection film on the oxide semiconductor layer; source and drain electrodes on the channel protection film; and a passivation film on the source and drain electrodes, wherein, (a) each of the gate insulation film, and passivation film comprises a laminated structure and includes a first layer made of aluminum oxide and a second layer made of an insulation material including silicon, and (b) the passivation film covers edges of the oxide semiconductor layer. The transistor is capable of suppressing desorption of oxygen and from the oxide semiconductor layer and reducing the time for film formation thereof.

Abstract: A vehicular travel control device according to the invention includes an inter-vehicle distance measuring section that is mounted on a subject vehicle and measures an inter-vehicle distance between the subject vehicle and a preceding vehicle, a target inter-vehicle distance setting section that sets a target inter-vehicle distance, a following travel control section that performs a travel control so as to make the inter-vehicle distance become equal to the target inter-vehicle distance and stops the subject vehicle while following a stopping of the preceding vehicle, a gradient acquiring section that acquires a gradient of a road being traveled of the subject vehicle, and a vehicle speed sensor that measures a travel speed of the subject vehicle. The target inter-vehicle distance setting section sets the target inter-vehicle distance based on the gradient and the travel speed.

Abstract: A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.

Abstract: When a start-up operation by a driver is detected while a vehicle is maintained at a stopped state, a target driving force for suppressing the movement of the vehicle on the road to be driven is calculated, based on the grade obtained regarding the road to be driven on. After the vehicle is driven by the target driving force, the braking force is released so as to terminate the maintaining of the stopped state of the vehicle. Preferably, the state of being driven by the target driving force is maintained until the releasing of the braking force is completed. When the releasing of the braking force is completed, the driving force is increased to start-up the vehicle. With such a start-up control, vehicles are prevented from moving temporarily in a direction opposite from the traveling direction, and a smooth star-up can be achieved.

Abstract: A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.

Abstract: A thin film transistor comprising: a substrate; a gate electrode on the substrate; a gate insulation film on the gate electrode; an oxide semiconductor layer on the gate insulation film; a channel protection film on the oxide semiconductor layer; source and drain electrodes on the channel protection film; and a passivation film on the source and drain electrodes, wherein, (a) each of the gate insulation film, and passivation film comprises a laminated structure and includes a first layer made of aluminum oxide and a second layer made of an insulation material including silicon, and (b) the passivation film covers edges of the oxide semiconductor layer. The transistor is capable of suppressing desorption of oxygen and from the oxide semiconductor layer and reducing the time for film formation thereof.

Abstract: A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same. The thin film transistor includes, sequentially over a substrate, a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.

Abstract: According to an aspect of the invention, there is provided a storage medium readable by a computer, the storage medium storing a program of instructions executable by the computer to perform a function for controlling a job log, comprising: generating a job log after execution of a job; creating a log image from an image handled in the job; and performing transfer of the job log and the log image to an external device with predetermined timing.

Abstract: A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.

Abstract: When a preceding vehicle (Vb) starts during deceleration of a vehicle (Va) which is trying to stop following the stopped preceding vehicle (Vb), if the vehicle (Va) accelerates following the preceding vehicle (Vb), the driver possibly mistakes that the vehicle is equipped with an automatic start function. A virtual preceding vehicle (Vb?) is set at the stop position of the preceding vehicle (Vb), so that the vehicle (Va) is temporarily stopped following the stopping virtual preceding vehicle (Vb?) even if the actual preceding vehicle (Vb) is started. As a result, the vehicle (Va) is not started until the driver indicates the intention to start by operating a start switch, and the driver can be prevented from mistaking that the vehicle is equipped with an automatic start function.

Abstract: A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.

Abstract: An active matrix type display device, wherein a pixel circuit is formed using a plurality of thin film transistors in which thin semiconductor films forming channel regions of the thin film transistors are made in different crystal states.

Abstract: Provided are a thin film transistor that is capable of suppressing desorption of oxygen and others from an oxide semiconductor layer, and reducing the time to be taken for film formation, and a display device provided therewith. A gate insulation film 22, a channel protection layer 24, and a passivation film 26 are each in the laminate configuration including a first layer 31 made of aluminum oxide, and a second layer 32 made of an insulation material including silicon (Si). The first and second layers 31 and 32 are disposed one on the other so that the first layer 31 comes on the side of an oxide semiconductor layer 23. The oxide semiconductor layer 23 is sandwiched on both sides by the first layers 31 made of aluminum oxide, thereby suppressing desorption of oxygen and others, and stabilizing the electrical characteristics of a TFT 20.

Abstract: A semiconductor apparatus having a substrate and a laminate structure formed on the substrate, the laminate structure including an insulating film made of a metal oxide and a semiconductor thin film, both the insulating film and the semiconductor thin film being crystallized.

Abstract: A thin film transistor substrate with reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate. The thin film transistor substrate includes: a substrate; a thin film transistor having, over the substrate, a gate electrode, a gate insulating film, an oxide semiconductor layer, and a source-drain electrode in order; and a capacitor having, over the substrate, a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order.

Abstract: A method of manufacturing a display unit includes: forming, on a substrate, a thin-film transistor having an oxide semiconductor layer; and forming, above the thin-film transistor, a display region that includes a plurality of display elements. The oxide semiconductor layer is formed using a sputtering method in which a target and the substrate are opposed to each other. The target is made of an oxide semiconductor and includes a plurality of divided portions that are jointed in a planar form. A spacing interval between two joints that are formed by the plurality of divided portions and are side-by-side with one another of the target is equal to or less than a width of a luminance distribution arising in the display region in a direction substantially orthogonal to the joints.

Abstract: A display device includes: a thin film transistor; and a wiring layer; the thin film transistor including a control electrode, a semiconductor layer facing the control electrode, a first electrode made of a light transmissive material and electrically connected to the semiconductor layer, and a second electrode including a metal film having resistance lower than that of the light transmissive material, the second electrode being electrically connected to each of the semiconductor layer and the wiring layer, wherein a difference in ionization tendency between a material configuring the metal film and a conductive material configuring a part or whole of the wiring layer is smaller than a difference in ionization tendency between the light transmissive material and the conductive material.

Abstract: A vehicle gradient estimating device includes: a vehicle speed sensor which detects a traveling speed of a subject vehicle; an acceleration calculating unit which calculates an acceleration of the subject vehicle on the basis of the traveling speed; an engine load deceleration calculating unit which calculates a deceleration due to an engine load of the subject vehicle; an acceleration correcting unit which corrects the acceleration by using the deceleration; a brake fluid pressure detecting unit which detects a brake fluid pressure of the subject vehicle; and a first gradient estimating unit which estimates a gradient of a road being traveled of the subject vehicle, wherein the first gradient estimating unit estimates the gradient on the basis of a ratio between the brake fluid pressure and the acceleration corrected by the acceleration correcting unit.

Abstract: There are provided a display and an electronic unit capable of enhancing visibility. The display includes: a plurality of pixels each including a light-emission device, and having a light-transmission region in at least a part thereof; and one or more transmittance control devices capable of controlling a transmittance of incident light.

Abstract: A first server including a local disk and a second server are logically partitioned by virtualization units. The first and second servers each have a storage controller LPAR with a local disk sharing function running thereon. The storage controller LPARs running on the first and second servers communicate with each other. When a disk I/O command issued by the second LPAR running on the second server is transferred to the local disk of the first server, the second LPAR reads data stored in the local disk or writes data thereto. In this way, the local disk is shared.