Abstract: A thin film transistor is formed by laminating a gate electrode 3, a gate insulating film(4), a channel layer(5), and source/drain layers(7),(8) on a substrate(2) in this order or in a reversed order thereof. The thin film transistor is characterized in that the source/drain layers(7), (8) contain impurities having a concentration gradient such that a concentration becomes lower toward the channel layer(5). The thin film transistor which can increase an on/off ratio, manufacture method thereof, and a display device are provided.

Abstract: A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.

Abstract: A method of manufacturing a display unit and a display unit capable of decreasing particles caused by a sputtering target of an oxide electric conductor and obtaining favorable electric conductive characteristics between a metal and the oxide electric conductor in the case where a first electrode has a laminated structure including the metal and the oxide electric conductor are provided. The method of manufacturing a display unit having a display layer between a first electrode and a second electrode, wherein a step of forming the first electrode includes the steps of: forming a laminated structure sequentially including a first layer made of a metal and a second layer made of a metal whose oxide exhibits electric conductivity over a substrate; and providing surface oxidation treatment after forming the laminated structure and thereby forming an oxide electric conductor film in at least part in a thickness direction of the second layer.

Abstract: A method of manufacturing a thin film transistor capable of inhibiting the characteristics variation of the thin film transistor without deteriorating the characteristics thereof is provided. A crystalline silicon film is formed by indirect heat treatment through a photothermal conversion layer and a buffer layer. By patterning the buffer layer and an insulating film, a channel protective film is selectively formed in a region corresponding to a channel region on the crystalline silicon film. Further, when an n+ silicon film and a metal layer are selectively removed, the channel protective film functions as an etching stopper. When the crystalline silicon film is formed, heat is uniformly supplied. Further, in etching, the channel region of the crystalline silicon film is protected.

Abstract: The network system of the present invention is comprises lower segments constituted in each of a plurality of organizations, floors, offices, and an upper segment that connects the lower segments together. The network system comprises an improved L2 switch that is installed in each lower segment and has a function to transmit a frame, which is transmitted from other network devices of each lower segment to the improved L2 switch itself to a center device that is installed in upper segment; and the center device that is individually connected to the improved L2 switch and controls the data communication of the frame between the improved L2 switches. According to the present invention, a network system; wherein data communication can be performed easily between the lower segments, and an ideal data transfer system which can be prepared optionally by changing the center device characteristics when necessary, can be offered.

Abstract: An array substrate, a gate insulating layer, and a data line are deposited sequentially on a liquid crystal cell. At a part of this configuration, a planarizing layer covers the gate insulating layer and the data line. The planarizing layer has a groove formed right above the data line. A common electrode is formed on internal walls of the groove and on the flat surface of the planarizing layer corresponding to the shoulders of the groove. A pixel electrode is formed on the flat surface with a certain distance from the common electrode.

Abstract: A drive control apparatus for a vehicle includes: a follow-up control device; a stop hold device that is capable of holding the vehicle in a stopped state by controlling a brake pressure; and a driving operation detection device that detects at least one of a brake operation and a shift operation to a reverse or neutral position, wherein the follow-up control device cancels the holding of the vehicle in the stopped state by making the stop hold device cancel the holding of the vehicle in the stopped state after holding the vehicle in the stopped state for a predetermined time period or by making the stop hold device gradually reduce the brake pressure when the driving operation detection device detects at least one of the brake operation and the shift operation to the reverse or neutral position while the vehicle is held in the stopped state.

Abstract: A light emitting device includes: a plurality of transistors individually corresponding to a plurality of pixels arrayed in a matrix shape, and a plurality of wiring lines connected with the transistors and disposed between the pixels. The wiring lines include signal lines connected with the transistors of the pixel columns composed of a plurality of pixels along a row direction or a column direction, and two or more common electrode lines connected with the transistors of a pixel group composed of a plurality of pixels along the row direction and the column direction. The common electrode lines are arranged on the two sides centering the signal lines.

Abstract: In the case of filling and setting the liquid powders or the particles in a plurality of cells formed by the partition walls on the substrate, the method includes the steps of: setting a nozzle at an upper portion of a container; setting the substrate, on which the partition walls are arranged, at a lower portion of the container; scattering the liquid powders or the particles dispersed in a gas from the nozzle arranged at the upper portion in the container; and filling the liquid powders or the particles in the cells on the substrate arranged at the lower portion in the container.

Abstract: Particles for display media used for an information display device, wherein the display media are sealed between two opposed substrates, at least one of which is transparent and wherein the display media, to which an electrostatic field is applied, are made to move so as to display information such as an image or the like, having compound particles of mother particles and child particles, which are embedded in the surface layer of the mother particles and whose surfaces are exposed. Consequently, particles for display media, which are used for an information display device, wherein child particles are not dissociated under a reverse durability test, where rewriting is repeated, and primary performance can be maintained during the reverse durability test are provided. An information display panel and an information display device using the particles for display media are also provided.

Abstract: A follow running control system of the present invention includes a running control device for performing running control of the present vehicle based on data of the preceding vehicle and a signal from the driving operation detecting device. If advancing of the preceding vehicle is detected by a preceding vehicle advancing detecting device while the advancing request information is stored by a advancing request storing device, the running control device changes a control state of the present vehicle with respect to a follow running control device and starts follow running control.

Abstract: A thin film transistor manufacturing method includes the steps of: forming a gate electrode, gate insulating film and amorphous silicon film in succession on an insulating substrate; forming a channel protective film only in the region which will serve as a channel region of the amorphous silicon film; and forming an n-plus silicon film and metal layer on top of the channel protective film and amorphous silicon film in succession. The method further includes the step of patterning the amorphous silicon film and n-plus silicon film to selectively leave the region associated with source and drain electrodes, using the channel protective film as an etching stopper to selectively remove the region of the n-plus silicon film and metal layer associated with the channel region so as to form source and drain regions from the n-plus silicon film and also form source and drain electrodes from the metal layer.

Abstract: A method for making a semiconductor apparatus including the steps of: forming a laminate structure of an insulating film made of a metal oxide and a semiconductor thin film on a substrate; forming a light absorption layer on top of the laminate structure; and irradiating an energy beam of a wavelength capable of being absorbed by the light absorption layer on the light absorption layer and simultaneously crystallizing the insulating film and the semiconductor thin film by means of heat generated in the light absorption layer.

Abstract: Disclosed herein is a semiconductor device manufacturing method for performing an annealing process of irradiating a semiconductor film on which element forming areas including thin film transistor forming areas are arranged in a two-dimensional pattern with energy beams using a plurality of irradiating optical systems, wherein in the annealing process, an area irradiated with the energy beams is divided into a single beam irradiated area irradiated by each of the plurality of irradiating optical systems with an energy beam singly and a boundary area situated between single beam irradiated areas adjacent to each other and irradiated by both of two irradiating optical systems performing beam irradiation of the single beam irradiated areas with energy beams.

Abstract: A manager transmits an I/O bus signal to an I/O bus manager in a computer at a predetermined point of time to inform the I/O bus manager of occurrence of an I/O bus fault. The I/O bus manager initializes an I/O bus and then informs a CPU in the computer of the I/O bus fault as an interruption to be processed by an OS operated by the CPU, whereby the OS can acquire the fault information after the interruption even in the case where an I/O bus fault occurs.

Abstract: A method of rebooting an operating system including a plurality of load modules in a single computer. One load module which is to be operated during rebooting of the operating system is held in a memory, while establishing a state capable of accepting interrupt to be processed by the one load module. All the other load modules are loaded in a memory of the computer. Processing of the interrupt can be executed by the one load module even during the rebooting of the operating system.

Abstract: There is provided an image log management apparatus. The apparatus includes a rule storage unit that stores a rule for determining whether or not a log image is recorded at a time when each processing operation is performed by one or more image-processing units according to a program in which a procedure for using the one or more image-processing units is described; an acceptance unit that accepts the program in which the procedure for using the one or more image-processing units is described; a program execution unit that executes the program accepted in the acceptance unit; and a log controller that, by reference to a rule applicable to each of the image-processing units used in the program, performs control as to whether or not a log image relating to execution of the program in the program execution unit is recorded.

Abstract: A method of manufacturing a thin film transistor capable of inhibiting the characteristics variation of the thin film transistor without deteriorating the characteristics thereof is provided. A crystalline silicon film is formed by indirect heat treatment through a photothermal conversion layer and a buffer layer. By patterning the buffer layer and an insulating film, a channel protective film is selectively formed in a region corresponding to a channel region on the crystalline silicon film. Further, when an n+ silicon film and a metal layer are selectively removed, the channel protective film functions as an etching stopper. When the crystalline silicon film is formed, heat is uniformly supplied. Further, in etching, the channel region of the crystalline silicon film is protected.

Abstract: An array substrate, a gate insulating layer, and a data line are deposited sequentially on a liquid crystal cell. At a part of this configuration, a planarizing layer covers the gate insulating layer and the data line. The planarizing layer has a groove formed right above the data line. A common electrode is formed on internal walls of the groove and on the flat surface of the planarizing layer corresponding to the shoulders of the groove. A pixel electrode is formed on the flat surface with a certain distance from the common electrode.

Abstract: A driving control apparatus comprising: an detecting device that detects objects; a preceding vehicle determining device that determines a preceding vehicle; a driving control device that executes a driving control; a control start intention detection device that detects an intention of a driver to start the control; and a control start intention detection device that detects an intention of a driver to start the follow-up control or the stop hold control, wherein the control state determination device sets to the follow-up control state when the preceding vehicle is detected by the preceding vehicle detection device and when the intention is detected, and sets to the stop hold state when the intention is detected while the vehicle is substantially in the stopped and no object is detected by the object detection device.