Abstract: A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.

Abstract: There is provided a thin film transistor, which has a uniform and good electric characteristic and has a simple configuration allowing decrease in number of manufacturing steps, and a method of manufacturing the thin film transistor, and a display device having the thin film transistor. The thin film transistor includes: a gate electrode; an oxide semiconductor film having a multilayer structure of an amorphous film and a crystallized film; and a source electrode and a drain electrode provided to contact the crystallized film.

Abstract: A semiconductor apparatus having a substrate and a laminate structure formed on the substrate, the laminate structure including an insulating film made of a metal oxide and a semiconductor thin film, both the insulating film and the semiconductor thin film being crystallized.

Abstract: A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.

Abstract: Provided are a thin film transistor that is capable of suppressing desorption of oxygen and others from an oxide semiconductor layer, and reducing the time to be taken for film formation, and a display device provided therewith. A gate insulation film 22, a channel protection layer 24, and a passivation film 26 are each in the laminate configuration including a first layer 31 made of aluminum oxide, and a second layer 32 made of an insulation material including silicon (Si). The first and second layers 31 and 32 are disposed one on the other so that the first layer 31 comes on the side of an oxide semiconductor layer 23. The oxide semiconductor layer 23 is sandwiched on both sides by the first layers 31 made of aluminum oxide, thereby suppressing desorption of oxygen and others, and stabilizing the electrical characteristics of a TFT 20.

Abstract: A display including a light-emitting element is provided. The light-emitting element includes a lower display electrode, an organic layer including a light-emitting layer, and an upper display electrode, wherein the lower display electrode is formed in a source-drain electrode layer or a gate electrode layer. A method of manufacture and an electronic device including the display are also provided.

Abstract: A method for making a semiconductor apparatus including the steps of: forming a laminate structure of an insulating film made of a metal oxide and a semiconductor thin film on a substrate; forming a light absorption layer on top of the laminate structure; and irradiating an energy beam of a wavelength capable of being absorbed by the light absorption layer on the light absorption layer and simultaneously crystallizing the insulating film and the semiconductor thin film by means of heat generated in the light absorption layer.

Abstract: There is provided a thin film transistor capable of suppressing generation of a leak current in an oxide semiconductor film. A thin film transistor 1 includes a gate electrode 12 on a substrate 11, and includes a gate insulating film 13 so as to cover the gate electrode 12 and the substrate 11. An oxide semiconductor film 14 is formed in a region corresponding to the gate electrode 12 on the gate insulating film 13, and a source electrode 15A and a drain electrode 15B are provided with a predetermined interval in between on the oxide semiconductor film 14. A protective film 16 is formed over a whole surface of the substrate 11 so as to cover a channel region 14A of the oxide semiconductor film 14, the source electrode 15A, and the drain electrode 15B. The protective film 16 is composed of an aluminum oxide film, and this aluminum oxide film is formed by an atomic layer deposition method. An entry of hydrogen into the oxide semiconductor film 14 is suppressed by the protective film 16.

Abstract: Disclosed herein is a semiconductor device manufacturing method for performing an annealing process of irradiating a semiconductor film on which element forming areas including thin film transistor forming areas are arranged in a two-dimensional pattern with energy beams using a plurality of irradiating optical systems, wherein in the annealing process, an area irradiated with the energy beams is divided into a single beam irradiated area irradiated by each of the plurality of irradiating optical systems with an energy beam singly and a boundary area situated between single beam irradiated areas adjacent to each other and irradiated by both of two irradiating optical systems performing beam irradiation of the single beam irradiated areas with energy beams.

Abstract: A method of manufacturing a display unit and a display unit capable of decreasing particles caused by a sputtering target of an oxide electric conductor and obtaining favorable electric conductive characteristics between a metal and the oxide electric conductor in the case where a first electrode has a laminated structure including the metal and the oxide electric conductor are provided. The method of manufacturing a display unit having a display layer between a first electrode and a second electrode, wherein a step of forming the first electrode includes the steps of: forming a laminated structure sequentially including a first layer made of a metal and a second layer made of a metal whose oxide exhibits electric conductivity over a substrate; and providing surface oxidation treatment after forming the laminated structure and thereby forming an oxide electric conductor film in at least part in a thickness direction of the second layer.

Abstract: A thin film transistor manufacturing method includes the steps of: forming a gate electrode, gate insulating film and amorphous silicon film in succession on an insulating substrate; forming a channel protective film only in the region which will serve as a channel region of the amorphous silicon film; and forming an n-plus silicon film and metal layer on top of the channel protective film and amorphous silicon film in succession. The method further includes the step of patterning the amorphous silicon film and n-plus silicon film to selectively leave the region associated with source and drain electrodes, using the channel protective film as an etching stopper to selectively remove the region of the n-plus silicon film and metal layer associated with the channel region so as to form source and drain regions from the n-plus silicon film and also form source and drain electrodes from the metal layer.

Abstract: The present invention provides an information display panel capable of achieving good display performance (high contrast and low voltage driving), especially high contrast for a long term from the initial stage by using particles for display media whose charge amount is controllable In an information display panel, in which at least one kind of display media are sealed in a space between two substrates at least one of which is transparent, for displaying an image by electrically moving the display media, a particle for display media combined in a form of a mother particle embedded with first child particles and second child particles, wherein the first child particles and the second child particles have a smaller particle diameter and higher hardness than those of the mother particle and the first child particles and the second child particles have different charging characteristics with each other is used as the display media.

Abstract: A vehicle gradient estimating device includes: a vehicle speed sensor which detects a traveling speed of a subject vehicle; an acceleration calculating unit which calculates an acceleration of the subject vehicle on the basis of the traveling speed; an engine load deceleration calculating unit which calculates a deceleration due to an engine load of the subject vehicle; an acceleration correcting unit which corrects the acceleration by using the deceleration; a brake fluid pressure detecting unit which detects a brake fluid pressure of the subject vehicle; and a first gradient estimating unit which estimates a gradient of a road being traveled of the subject vehicle, wherein the first gradient estimating unit estimates the gradient on the basis of a ratio between the brake fluid pressure and the acceleration corrected by the acceleration correcting unit.

Abstract: A vehicular travel control device according to the invention includes an inter-vehicle distance measuring section that is mounted on a subject vehicle and measures an inter-vehicle distance between the subject vehicle and a preceding vehicle, a target inter-vehicle distance setting section that sets a target inter-vehicle distance, a following travel control section that performs a travel control so as to make the inter-vehicle distance become equal to the target inter-vehicle distance and stops the subject vehicle while following a stopping of the preceding vehicle, a gradient acquiring section that acquires a gradient of a road being traveled of the subject vehicle, and a vehicle speed sensor that measures a travel speed of the subject vehicle. The target inter-vehicle distance setting section sets the target inter-vehicle distance based on the gradient and the travel speed.

Abstract: A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same are provided. The thin film transistor includes sequentially over a substrate a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.

Abstract: A method of rebooting an operating system including a plurality of load modules in a single computer. One load module which is to be operated during rebooting of the operating system is held in a memory, while establishing a state capable of accepting interrupt to be processed by the one load module. All the other load modules are loaded in a memory of the computer. Processing of the interrupt can be executed by the one load module even during the rebooting of the operating system.

Abstract: A thin film transistor includes: a gate electrode; a gate insulting film formed on the gate electrode; an oxide semiconductor thin film layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective layer that is formed at least in a region corresponding to the channel region on the gate insulating film and the oxide semiconductor thin film layer, and that includes a first channel protective layer on a lower layer side and a second channel protective layer on an upper layer side; and a source/drain electrode that is formed on the channel protective layer and is electrically connected to the oxide semiconductor thin film layer. The first channel protective layer is made of an oxide insulating material, and one or both of the first channel protective layer and the second channel protective layer is made of a low oxygen permeable material.

Abstract: The present invention provides a thin film transistor substrate realizing reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate. The thin film transistor substrate includes: a substrate; a thin film transistor having, over the substrate, a gate electrode, a gate insulating film, an oxide semiconductor layer, and a source-drain electrode in order; and a capacitor having, over the substrate, a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order.

Abstract: A storage medium is readable by a computer. The storage medium stores a program of instructions executable by the computer to perform a function for managing a job log. The function includes: creating a job log after execution of a job; generating a log image from an image handled by the job; and storing the log image in association with the job log.

Abstract: A computer system of a multi-operation-system (multi-OS) has a main memory having a memory area for a first OS and a memory area for a second OS, both the areas being independent from each other, and a plurality of I/O devices divisionally allocated to the first OS and the second OS. The first OS is loaded in the first OS memory area, and thereafter when the first OS is operated, the second OS is loaded in the second OS memory area and initialized. When the first OS is operated, the first OS hardware resources and the second OS hardware resources are registered by the first OS. Thereafter when the first OS is operated, the first OS inhibits the registration of an interrupt number already allocated to the second OS I/O device. In response to an interrupt request from a second OS I/O device, the second OS starts operating.