Abstract: A hotspot searching apparatus manufactures a small number of chips or regions on a semiconductor wafer under respectively different manufacturing process conditions, compares SEM images of their external appearances to output a point having large differences as a narrow process window, that is, a process monitoring point that should be managed in mass production, the narrow process window having a narrow manufacturing process condition (exposure condition) in the manufacturing of the semiconductor wafer, and sets the point as a measurement point by a CD-SEM apparatus, such that it extracts and determines plural circuit pattern parts having a narrow manufacturing process margin as the process monitoring point in a short time and a process monitoring point monitoring performs shape inspection or shape length measurement in detail at high resolution.

Abstract: To prevent overlooking of a defect due to reduction in a defect signal, a defect inspection device is configured such that: light is irradiated onto an object to be inspected on which a pattern is formed; reflected, diffracted, and scattered light generated from the object by the irradiation of the light is collected, such that a first optical image resulting from the light passed through a first spatial filter having a first shading pattern is received by a first detector, whereby a first image is obtained; the reflected, diffracted, and scattered light generated from the object is collected, such that a second optical image resulting from the light passed through a second spatial filter having a second shading pattern is received by a second detector, whereby a second image is obtained; and the first and second images thus obtained are processed integrally to detect a defect candidate(s).

Abstract: In order to maximize the effect of signal addition during inspection of foreign substances in wafers, a device structure including line sensors arranged in plural directions is effective. Low-angle detection optical systems that detect light beams in plural azimuth directions, the light beams being scattered in low angle directions among those scattered from a linear area on a sample illuminated by illuminating means, each include a combination of a first imaging lens group (330) and a diffraction grating (340) and a combination of a second imaging lens group (333) and an image detector (350) having a plurality of light receiving surfaces. A signal processing unit processes signals from the image detectors of the low-angle detection optical systems by adding the signals from the light receiving surfaces corresponding between the image detectors.

Abstract: Provided is an examination technique to detect defects with high sensitivity at an outer-most repetitive portion of a memory mat of a semiconductor device and even in a peripheral circuit having no repetitiveness. A circuit pattern inspection apparatus comprises an image detection unit for acquiring an image of a circuit pattern composed of multiple die having a repetitive pattern, a defect judgment unit which composes, in respect of an acquired detected image, reference images by switching addition objectives depending on regions of repetitive pattern and the other regions and compares a composed reference image with the detected image to detect a defect, and a display unit for displaying the image of the detected defect.

Abstract: A defect inspecting method is provided which comprises a pre-scan defect inspecting process including a pre-scan irradiating step for casting irradiation light onto the surface of a sample, a pre-scan detecting step for detecting the scattered lights, and a pre-scan defect information collecting step for obtaining information on preselected defects present on the sample surface on the basis of the scattered lights; a near-field defect inspecting process including a near-field irradiating step in which the distance between the sample surface and a near-field head is adjusted so that the sample surface is irradiated, a near-field detecting step for detecting near-field light response, and a near-field defect information collecting step for obtaining information on the preselected defects on the basis of the near-field light response; and a merging process for inspecting defects present on the sample surface by merging the pieces of information on the preselected defects.

Abstract: In the case where a specimen is imaged by a scanning electron microscope, it is intended to acquire an image of a high quality having a noise component reduced, thereby to improve the precision of an image processing. The intensity distribution of a beam is calculated on the basis of an imaging condition or specimen information, and an image restoration is performed by using a resolving power deterioration factor other than the beam intensity distribution as a target of a deterioration mode, so that a high resolving power image can be acquired under various conditions. In the scanning electron microscope for semiconductor inspections and semiconductor measurements, the restored image is used for pattern size measurement, defect detections, defect classifications and so on, so that the measurements can be improved in precision and so that the defect detections and classifications can be made high precise.

Abstract: Proposed is a defect inspection method whereby: illuminating light having a substantially uniform illumination intensity distribution in one direction of a sample surface irradiated on the sample surface; multiple scattered light components, which are output in multiple independent directions, are detected among the scattered light from the sample surface and multiple corresponding scattered light detection signals are obtained; at least one of the multiple scattered light detection signals is processed and the presence of defects is determined; at least one of the multiple scattered light detection signals that correspond to each of the points determined by the processing as a defect is processed and the dimensions of the defect are determined; and the position and dimensions of the defect on the sample surface, at each of the points determined as a defect, are displayed.

Abstract: In apparatuses for automatically acquiring and also for automatically classifying images of defects present on a sample such as a semiconductor wafer, a classifying system is provided which are capable of readily accepting even such a case that a large number of classification classes are produced based upon a request issued by a user, and also even such a case that a basis of the classification class is changed in a high frequency. When the user defines the classification classes, a device for designating attributes owned by the respective classification classes is provided. The classifying system automatically changes a connecting mode between an internally-provided rule-based classifier and an example-based classifier, so that such a classifying system which is fitted to the classification basis of the user is automatically constructed.

Abstract: A conventional pattern inspection, which compares an image to be inspected with a reference image and subjects the resulting difference value to the defect detection using the threshold of defect determination, has difficulty in highly-sensitive inspection. Because defects occur only in specific circuit pattern sections, false reports occur in the conventional pattern inspections which are not based on the position. Disclosed are a defect inspection method and a device thereof which perform a pattern inspection by acquiring a GP image in advance, designating a place to be inspected and a threshold map to the GP image on the GUI, setting the identification reference of the defects, next acquiring the image to be inspected, applying the identification reference to the image to be inspected, and identifying the defects with the identification reference, thereby enabling the highly-sensitive inspection.

Abstract: Disclosed is a defect inspection method which makes it possible to scan the entire surface of a sample and detect minute defects without causing thermal damage to the sample. A defect inspection method in which a pulse laser emitted from a light source is subjected to pulse division and irradiated on the surface of a sample which moves in one direction while the divided-pulse pulse laser is rotated, reflection light from the sample irradiated by the divided-pulse pulse laser is detected, the signal of the detected reflection light is processed to detect defects on the sample, and information regarding a detected defect is output to a display screen, wherein the barycentric position of the light intensity of the divided-pulse pulse laser is monitored and adjusted.

Abstract: A scanning electron microscope includes an electron beam source which emits an electron beam, a beam current controller which controls a beam current of the electron beam, an electron beam converger which converges the electron beam on a surface of a sample, an electron beam scanner which scans the electron beam on the surface of the sample, a table which mounts the sample and moves at least in one direction, a detector which detects a secondary electron or a reflected electron emanated from the sample by the scan of the electron beam, an image former which forms an image of the sample based on a detection value of the detector, an image processor which processes the image formed by the image former. The beam current controller controls the beam current of the electron beam by changing transmittance of the electron beam in an irradiation path of the electron beam.

Abstract: In performing a programmed-point inspection of a circuit pattern using a review SEM, stable inspection can be performed while suppressing the generation of a false report even when a variation in a circuit pattern to be inspected is large. SEM images that are obtained by sequentially imaging a predetermined circuit pattern using the review SEM are stored into a storage unit. Images that meet a set condition are selected from the stored SEM images, and averaged to create an average image (GP image). By performing pattern check by GP comparison using this GP image, an inspection can be performed while suppressing the generation of a false report even when a variation in the circuit patterns is large.

Abstract: A defect inspection device has: an illumination optical system which irradiates a predetermined region of an inspection target with illumination light; a detection optical system which has a detector provided with a plurality of pixels by which scattered light from the predetermined region of the inspection target due to illumination light from the illumination optical system can be detected; and a signal processing portion which is provided with a correction portion which corrects pixel displacement caused by change in a direction perpendicular to a surface of the inspection target with respect to a detection signal based on the scattered light detected by the detector of the detection optical system, and a defect determination portion which determines a defect on the surface of the inspection target based on the detection signal corrected by the correction portion.

Abstract: The present invention relates to a defect inspection device which includes: irradiating means for simultaneously irradiating different regions on a sample with illumination light under different optical conditions, the sample being predesigned to include patterns repeatedly formed thereupon, wherein the patterns are to be formed in the same shape; detection means for detecting, for each of the different regions, a beam of light reflected from each region irradiated with the illumination light; defect candidate extraction means for extracting defect candidates under the different optical conditions for each of the different regions, by processing detection signals corresponding to the reflected light which is detected; defect extraction means for extracting defects by integrating the defect candidates extracted under the different optical conditions; and defect classifying means for calculating feature quantities of the extracted defects and classifies the defects according to the calculated feature quantities

Abstract: Disclosed is a defect inspection device comprising: an illumination optical portion which illuminates an object to be inspected with illuminating light; a detection optical portion system illuminated by the illumination optical portion and provided with a plurality of detectors which respectively detects components of scattering light which scatter from the inspected object each in a different direction of azimuthal angle or in a different direction of angle of elevation with respect to a surface of the inspected object; and a signal processing portion which makes gain adjustments and defect decisions in parallel on plural signals based on the components of the scattering light from the inspected object detected by the detectors, respectively, the defect decisions being based on a threshold value decision, and which extracts defects based on results of the gain adjustments and of the defect decisions.

Abstract: When multiple kinds of bacterial colonies are present in a petri dish and, for example, a drug tolerance is to be measured, harvesting of mixed colonies of different types of bacteria makes it impossible to accurately determine the drug tolerance. Also, it is required to improve the throughput of a device for harvesting a bacterial colony. From images illuminated from multiple directions, isolating bacterial colonies are automatically extracted. Next, the image feature amounts are calculated from the multiple images that are illuminated from multiple directions and colonies are grouped depending on the feature amounts. Then, bacterial colonies to be harvested are determined based on the results of the grouping.

Abstract: Disclosed is a defect inspection device that has an illumination optical system; a detection optical system; and a processing unit which includes a defect feature quantity calculation unit that calculates the feature quantities of each defect candidate, a defect candidate grouping unit that groups the aforementioned defect candidates on the basis of the feature quantities, a defect classification evaluation value calculation unit that calculates defect classification evaluation values for the aforementioned defect candidates, a defect classification evaluation value updating unit that, on the basis of instructions, updates the evaluation values, a defect classification threshold determination unit that, on the basis of evaluation valued updated by the aforementioned defect classification evaluation value updating unit, determines a classification boundary that is a threshold for classifying defect types of the aforementioned defect candidates, and a defect detection unit that detects defects using the thresho

Abstract: In order to maximize the effect of signal addition during inspection of foreign substances in wafers, a device structure including line sensors arranged in plural directions is effective. Low-angle detection optical systems that detect light beams in plural azimuth directions, the light beams being scattered in low angle directions among those scattered from a linear area on a sample illuminated by illuminating means, each include a combination of a first imaging lens group (330) and a diffraction grating (340) and a combination of a second imaging lens group (333) and an image detector (350) having a plurality of light receiving surfaces. A signal processing unit processes signals from the image detectors of the low-angle detection optical systems by adding the signals from the light receiving surfaces corresponding between the image detectors.

Abstract: A defect inspection method wherein illumination light having a substantially uniform illumination intensity distribution in a certain direction on the surface of a specimen is radiated onto the surface of the specimen; wherein multiple components of those scattered light beams from the surface of the specimen which are emitted mutually different directions are detected, thereby obtaining corresponding multiple scattered light beam detection signals; wherein the multiple scattered light beam detection signals is subjected to processing, thereby determining the presence of defects; wherein the corresponding multiple scattered light detecting signals is processed with respect to all of the spots determined to be defective by the processing, thereby determining the sizes of defects; and wherein the defect locations on the specimen and the defect sizes are displayed with respect to all of the spots determined to be defective by the processing.

Abstract: In the case where a specimen is imaged by a scanning electron microscope, it is intended to acquire an image of a high quality having a noise component reduced, thereby to improve the precision of an image processing. The intensity distribution of a beam is calculated on the basis of an imaging condition or specimen information, and an image restoration is performed by using a resolving power deterioration factor other than the beam intensity distribution as a target of a deterioration mode, so that a high resolving power image can be acquired under various conditions. In the scanning electron microscope for semiconductor inspections and semiconductor measurements, the restored image is used for pattern size measurement, defect detections, defect classifications and so on, so that the measurements can be improved in precision and so that the defect detections and classifications can be made high precise.