Abstract: With little efforts, to estimate the appropriateness of automatic defect classification, and to make classification criteria settable with a guarantee for the better classification performance, defects unknown with their classification classes are classified based on two different classification criteria. Also, defects differed in classification results are collected, and each thereto, a defect classification class is provided by using a manual. Then, the defects provided with the classification classes are divided into two types of groups: one is a setting group for the classification criteria; and the other is an evaluation group. Based on the classification criteria that is so set as to classify the defects included in the setting group with the maximum performance, the classification performance of a case where classification is applied to defects included in the evaluation group is calculated, and the appropriateness of thus set classification criteria is evaluated.

Abstract: The present invention relates to a defect detection or observation method that detects fine defects in the course of defect inspection and observation, does not detect locations not constituting defects, or classifies a defect candidate as a grain phenomenon or other phenomenon that does not affect a product.

Abstract: An apparatus for reviewing defects including an image processing section (defect classification device section) with a function of estimating a non-defective state (reference image) of a portion in which the defect exists by use of a defect image, and a function of judging criticality or non-flat state of the defect by use of the estimation result. It becomes possible to establish both of a high-throughput image collecting sequence in which any reference image is not acquired and high-precision defect classification, and then to realize both of a high performance classifying function and a high-throughput image collecting function in a defect reviewing apparatus which automatically collects and classifies images of defects existing on a sample of a semiconductor wafer or the like.

Abstract: An apparatus for reviewing defects including an image processing section (defect classification device section) with a function of estimating a non-defective state (reference image) of a portion in which the defect exists by use of a defect image, and a function of judging criticality or non-flat state of the defect by use of the estimation result. It becomes possible to establish both of a high-throughput image collecting sequence in which any reference image is not acquired and high-precision defect classification, and then to realize both of a high performance classifying function and a high-throughput image collecting function in a defect reviewing apparatus which automatically collects and classifies images of defects existing on a sample of a semiconductor wafer or the like.

Abstract: A method and apparatus for detecting defects includes irradiating and scanning an electron beam focused on an area of a sample, detecting charged particles generated from the sample by the irradiating and scanning of the electron beam with a first detector which detects charged particles having relatively low energy to obtain a first image of the area and with a second detector which detects charged particles having relatively high energy to obtain a second image of the area, comparing the first inspection image of the area with a first reference image to generate a first difference image, and comparing obtained second image of the area with a second reference image to generate a second difference image, and detecting an open defect or a short defect from at least one of the generated first difference image and the second difference image.

Abstract: A method of inspecting defects of a sample includes a first step for, on a basis of position information of defects on a sample placed on a movable table which is previously detected and obtained by an other inspection system, driving the table so that the defects come into a viewing field of an optical microscope having a focus which is adjusted, a second step for re-detecting the defects to obtain a first detection result, a third step for correcting the position information of defects on a basis of position information of defects re-detected of the first detection result, and a fourth step for reviewing the defects whose position information is corrected to obtain a second detection result. The method includes classifying types of defects on basis of the first detection result and the second detection result.

Abstract: In a detection step, light produced on a sample in plural directions are collectively detected using a plurality of detectors. Multidimensional features containing information about scattered light distributions are extracted based on a plurality of detector outputs obtained. The feature is compared with data in a scattered light distribution library thereby to determine the types and sizes of defects. In a feature extraction step, a feature outputted based on the magnitude of each of scattered light detected signals of scatterers already known in refractive index and shape, which are obtained in the detection step, is corrected, thereby realizing high precision determination.

Abstract: An object of the present invention provides an inspection apparatus and an inspection method which use an electron beam image to accurately detect a defect that is difficult to detect in an optical image, the apparatus and method also enabling prevention of a possible decrease in focus accuracy of an inspection image which affect the defect detection.

Abstract: A defect review method and device of the invention solves the previous problem of a long inspection time that is caused by the increase of a process-margin-narrow pattern as a result of the size reduction of a semiconductor device. With the method and device of the invention, an SEM (Scanning Electron Microscope) image is derived by capturing an image of a process-margin-narrow pattern portion extracted based on lithography simulation with image-capturing conditions of a relatively low resolution. The resulting SEM image is compared with CAD (Computer Aided Design) data for extraction of any abnormal section. An image of the area extracted as being abnormal is captured again, and the resulting high-resolution SEM image is compared again with the CAD data for defect classification based on the feature amount of the image, e.g., shape deformation.

Abstract: The present invention provides a method of classifying defects wherein defects are detected in a first inspection machine. The detected defects are then reviewed by a second inspection machine. A sampling rate for review by the second inspection machine is determined by a defect classifier in the first inspection machine.

Abstract: A method and an apparatus for reviewing defects detected by an optical particle inspection system or an optical profile inspection system in detail by an electron microscope are provided. In order to putting defects to be reviewed in the viewing field of the electron microscope and reducing the size of the apparatus, the electron microscope reviews defects detected by an optical defect inspection system. In the electron microscope, an optical microscope for reviewing detects is arranged, and when focusing of this optical microscope is carried out, the illumination position and the detection position of the optical microscope are not changed to the sample.

Abstract: The present invention relates to high-speed acquisition of both a perpendicular observation image and a tilt observation image, in observation using a scanning electron microscope. An electron-beam observation apparatus includes: a first electro-optical system which scans a converged electron beam from a substantially perpendicular direction to a defect on a target wafer to be observed, and acquires a defect image signal with perpendicular observation by detecting a secondary electron image or a reflected electron image generated from the defect; and a second electro-optical system which scans a converged electron beam from a tilt direction to the defect, and acquires a defect image signal with tilt observation by detecting a secondary electron image or a reflected electron image generated from the defect.

Abstract: In order to achieve high throughput in a SEM-type defect-reviewing apparatus and method for automatically acquiring images of review defects present on samples, including: a cell comparison step subdivided into the steps of (a) providing a defect detection success ratio or defect detection success map due to at least a cell comparison scheme for each wafer or each chip, (b) selecting a review sequence of either the cell comparison scheme or a die comparison scheme on the basis of the provided defect detection success ratio or defect detection success map, (c) if the cell comparison scheme is selected, judging whether detection of the review defect is possible by executing the cell comparison scheme; and a die comparison step in which die comparison is performed if the judgment result indicates that the detection of the review defect is impossible, or if the die comparison scheme is selected in the selection step.

Abstract: A hotspot searching apparatus manufactures a small number of chips or regions on a semiconductor wafer under respectively different manufacturing process conditions, compares SEM images of their external appearances to output a point having large differences as a narrow process window, that is, a process monitoring point that should be managed in mass production, the narrow process window having a narrow manufacturing process condition (exposure condition) in the manufacturing of the semiconductor wafer, and sets the point as a measurement point by a CD-SEM apparatus, such that it extracts and determines plural circuit pattern parts having a narrow manufacturing process margin as the process monitoring point in a short time and a process monitoring point monitoring performs shape inspection or shape length measurement in detail at high resolution.

Abstract: Disclosed herein are a circuit-pattern inspection apparatus, and a circuit-pattern inspection method, which are capable of making a highly sensitive defect judgment of an area including the most circumferential portion of a memory mat of a semiconductor chip formed on a semiconductor wafer.

Abstract: A highly reliable defect automatic classifying method and apparatus capable of flexibly coping with a request for classifying a defect given by each user without having to collect lots of teach data items. A classifying class arrangement is defined by a user by combining classes supplied by the system itself or classes defined by the user and, further, a priori knowledge on the defect class is given by the user as a restriction so as to carry out restricted learning.

Abstract: A method and apparatus for detecting defects includes irradiating and scanning an electron beam focused on an area of a sample, detecting charged particles generated from the sample by the irradiating and scanning of the electron beam with a first detector which detects charged particles having relatively low energy to obtain a first image of the area and with a second detector which detects charged particles having relatively high energy to obtain a second image of the area, comparing the first inspection image of the area with a first reference image to generate a first difference image, and comparing obtained second image of the area with a second reference image to generate a second difference image, and detecting an open defect or a short defect from at least one of the generated first difference image and the second difference image.

Abstract: A scanning electron microscope includes an electron beam source which emits an electron beam, a beam current controller which controls a beam current of the electron beam, an electron beam converger which converges the electron beam on a surface of a sample, an electron beam scanner which scans the electron beam on the surface of the sample, a table which mounts the sample and moves at least in one direction, a detector which detects a secondary electron or a reflected electron emanated from the sample by the scan of the electron beam, an image former which forms an image of the sample based on a detection value of the detector, an image processor which processes the image formed by the image former. The beam current controller controls the beam current of the electron beam by changing transmittance of the electron beam in an irradiation path of the electron beam.

Abstract: The present invention relates to a defect detection or observation method that detects fine defects in the course of defect inspection and observation, does not detect locations not constituting defects, or classifies a defect candidate as a grain phenomenon or other phenomenon that does not affect a product.

Abstract: A defect review method and device of the invention solves the previous problem of a long inspection time that is caused by the increase of a process-margin-narrow pattern as a result of the size reduction of a semiconductor device. With the method and device of the invention, an SEM (Scanning Electron Microscope) image is derived by capturing an image of a process-margin-narrow pattern portion extracted based on lithography simulation with image-capturing conditions of a relatively low resolution. The resulting SEM image is compared with CAD (Computer Aided Design) data for extraction of any abnormal section. An image of the area extracted as being abnormal is captured again, and the resulting high-resolution SEM image is compared again with the CAD data for defect classification based on the feature amount of the image, e.g., shape deformation.