Abstract: In the present invention, in order to realize both a reduction of an image detecting time and high quality image detection in a scanning electron microscope for measurement, inspection, defect review, or the like of semiconductor wafers, a low-magnification image is taken by using a large beam current; a high-magnification image is taken by using a small beam current; control amounts for correcting a change in luminance, a focus deviation, misalignment, and visual field misalignment of taken images, which are generated due to a variation of a beam current are saved in advance in a memory of an overall control system; and these amounts are corrected every time the beam current is switched, thereby making it possible to take the images without any adjustment operation after switching the currents.

Abstract: A method of observing a specimen using a scanning electron microscope, makes it possible to shorten the time required to perform automatic focusing at the time of semiconductor defect automatic review and improves the throughput in the processing in which the specimen is observed. In the above method, the specimen is imaged at a low resolution by the scanning electron microscope to obtain an image, an area for imaging the specimen at a high resolution is specified from the image acquired at the low resolution, the specimen is imaged at a high resolution by the scanning electron microscope to determine a focus position, a focal point of the scanning electron microscope is set to the determined focus position, and a high resolution image in the specified area is acquired in a state in which the focus position has been set to the determined focus position.

Abstract: A scanning electron microscope has an electron source for illuminating a primary electron beam on a specimen wafer, an accelerating electrode, a condenser lens, a deflector, an objective lens, a detector for acquiring a digital image by sampling a signal of emissive electrons generated from the specimen wafer, a digitizing means, an image memory for storing, displaying or processing the acquired digital image, an input/output unit, an image creation unit and an image processor. The scanning electron microscope is provided with a sampling unit for sampling the emissive electron signal at intervals each smaller than the pixel size of the digital image to be stored, displayed or processed and an image creation process means for enlarging the pixel size on the basis of the sampled emissive electron signal to create a digital image.

Abstract: In an automatic defect classifying method, defects not reviewed are assigned with defect classes having the same definitions as those of reviewed defects in order to effectively use information on defects not reviewed, the defects not reviewed occupying most of defects on a wafer. Defects not reviewed are assigned defect classes having the same definitions, by using defect data of defects detected with an inspection equipment and defect classes of already reviewed defects given by ADC of a review equipment. Since all defects are assigned the defect classes having the same definitions, more detailed analysis is possible in estimating the generation reasons of defects.

Abstract: A method to solve the problem of a technique generally used to detect a defect of a semiconductor by calculating the differential image based on pattern matching, which requires that a reference image must be picked up to pick up an image of the inspection position in an area with the semiconductor pattern having no periodicity, resulting in a low throughput. The image of the inspection position is divided into local areas, each local area is matched with the local area of the image already stored and the difference between the local areas thus matched is determined to extract a defect area.

Abstract: In a scanning electron microscope, scanning region is set to be narrow, upon which focused electron beam is scanned, so that the focused electron beam can be irradiated at the almost same position by plural numbers of times, irrespective of movement of the stage or of moving of the stage during braking thereof, and upon that region to be scanned is irradiated the focused electron beam, by plural numbers of times, while changing the focal position, thereby forming an image thereof. From the image formed is calculated out a section, from which a focus-in position can be calculated out, and then the focus-in position is calculated out from that calculated section.

Abstract: A method to solve the problem of a technique generally used to detect a defect of a semiconductor by calculating the differential image based on pattern matching, which requires that a reference image must be picked up to pick up an image of the inspection position in an area with the semiconductor pattern having no periodicity, resulting in a low throughput. The image of the inspection position is divided into local areas, each local area is matched with the local area of the image already stored and the difference between the local areas thus matched is determined to extract area.

Abstract: To acquire defect images even when a defect exists below an optically transparent film, an electron optical system of an electron microscope is set to a first imaging condition. A defect position of a specimen is set so as to fall within the visual field of the electron microscope, using position data of a defect of the specimen. The position of the defect is imaged by the electron microscope set to the first imaging condition to obtain a first image corresponding to the defect position. The first image is processed to determine whether a defect exists. The electron optical system is then set to a second imaging condition on the basis of the result of determination. A point imaged under the first imaging condition is imaged by the electron microscope set to the second imaging condition to acquire a second image corresponding to a defect position.

Abstract: A method of observing a specimen using a scanning electron microscope, makes it possible to shorten the time required to perform automatic focusing at the time of semiconductor defect automatic review and improves the throughput in the processing in which the specimen is observed. In the above method, the specimen is imaged at a low resolution by the scanning electron microscope to obtain an image, an area for imaging the specimen at a high resolution is specified from the image acquired at the low resolution, the specimen is imaged at a high resolution by the scanning electron microscope to determine a focus position, a focal point of the scanning electron microscope is set to the determined focus position, and a high resolution image in the specified area is acquired in a state in which the focus position has been set to the determined focus position.

Abstract: An apparatus and a method for automatically inspecting a defect by an electron beam using an X-ray detector. The composition of a defective portion is analyzed with higher rapidity and the cause of the defect is easily and accurately determined based on an X-ray spectrum. The X-ray spectrum and the image of foreign particles formed on a process QC wafer are registered as reference data, and the defects generated on a process wafer are classified by collation with the reference data. The use of both the X-ray spectrum and the detected image optimizes the operating conditions for X-ray detection. A defect of which the X ray is to be detected is selected based on the result of classification of defect images automatically collected, and the defect is classified according to the features including both the composition and the external appearance.

Abstract: This invention provides a technique for observing defects, which can automatically decide a direction from inclined observation and take an inclined review image. In a defect observing system for detecting the defects and thereafter observing images of the defects from various directions in detail, positions of inclined images to be taken are automatically displayed on a display screen from a planar image (top-down image) of a SEM using CAD data, and the defects are selected from the images displayed on the display screen based on specification by a user, an inclined angle and direction are determined per selected image to take an inclined image (beam-tilt image), and the inclined image of each defect is acquired.

Abstract: An apparatus and a method for automatically inspecting a defect by an electron beam using an X-ray detector. The composition of a defective portion is analyzed with higher rapidity and the cause of the defect is easily and accurately determined based on an X-ray spectrum. The X-ray spectrum and the image of foreign particles formed on a process QC wafer are registered as reference data, and the defects generated on a process wafer are classified by collation with the reference data. The use of both the X-ray spectrum and the detected image optimizes the operating conditions for X-ray detection. A defect of which the X ray is to be detected is selected based on the result of classification of defect images automatically collected, and the defect is classified according to the features including both the composition and the external appearance.

Abstract: A classification model optimum for realization of a defect classification request by a user is not known by the user. Then, the user sets a classification model which is not necessarily suitable and makes classification, resulting in degradation in classification performance. Therefore, the present invention automatically generates plural potential classification models and combines class likelihoods calculated from the plural classification models to classify. To combine, an index about the adequacy of each model, in other words, an index indicating a reliable level of likelihood calculated from the each potential classification model, is also calculated. Considering the calculated result, the class likelihoods calculated from the plural classification models are combined to execute classification.

Abstract: With little efforts, to estimate the appropriateness of automatic defect classification, and to make classification criteria settable with a guarantee for the better classification performance, defects unknown with their classification classes are classified based on two different classification criteria. Also, defects differed in classification results are collected, and each thereto, a defect classification class is provided by using a manual. Then, the defects provided with the classification classes are divided into two types of groups: one is a setting group for the classification criteria; and the other is an evaluation group. Based on the classification criteria that is so set as to classify the defects included in the setting group with the maximum performance, the classification performance of a case where classification is applied to defects included in the evaluation group is calculated, and the appropriateness of thus set classification criteria is evaluated.

Abstract: The present invention provides a method of classifying defects, comprising the steps of: inspecting a sample to detect defects; acquiring an image of the detected defects; extracting feature amounts of the defects from the acquired defect image; and classifying said detected defects with a defect classifier that uses the acquired feature amount information about the defects; wherein said classifier has a decision tree for hierarchically expanding defect class elements via branch elements, and wherein classification rules are individually set for said branch elements.

Abstract: The present invention relates to a defect detection or observation method that detects fine defects in the course of defect inspection and observation, does not detect locations not constituting defects, or classifies a defect candidate as a grain phenomenon or other phenomenon that does not affect a product.

Abstract: A highly reliable defect automatic classifying method and apparatus capable of flexibly coping with a request for classifying a defect given by each user without having to collect lots of teach data items. A classifying class arrangement is defined by a user by combining classes supplied by the system itself or classes defined by the user and, further, a priori knowledge on the defect class is given by the user as a restriction so as to carry out restricted learning.

Abstract: With a view to providing a monitoring system for the quality and manufacturing conditions of electronic circuits capable of facilitating the grasping of correlation's between diverse manufacturing conditions and manufacturing states, statistically characteristic images are selected out of a group of images retrieved from a detection information database by specifying at least one out of the values of feature quantities, design information and manufacturing conditions, and are displayed.

Abstract: An apparatus and a method for automatically inspecting a defect by an electron beam using an X-ray detector. The composition of a defective portion is analyzed with higher rapidity and the cause of the defect is easily and accurately determined based on an X-ray spectrum. The X-ray spectrum and the image of foreign particles formed on a process QC wafer are registered as reference data, and the defects generated on a process wafer are classified by collation with the reference data. The use of both the X-ray spectrum and the detected image optimizes the operating conditions for X-ray detection. A defect of which the X ray is to be detected is selected based on the result of classification of defect images automatically collected, and the defect is classified according to the features including both the composition and the external appearance.

Abstract: The present invention improves inspection efficiency in detailed inspections of defects performed based on inspection information from a defect inspection. Particles and defects are detected by a defect inspection device 1. If the cause of the particles and defects are to be determined by performing a detailed inspection with a details inspection device 3 using an SEM or the like, attributes are determined on the particles and defects detected by the defects inspection device 1 before the detailed inspection is performed. The attributes are determined with an attribute inspection device using an optical microscope or the like. Based on these attributes, the defects and particles are separated into those that require detailed inspection and those that do not require detailed inspection or that cannot be inspected in detail. A details inspection device 3 is used to inspect the particles and defects requiring detailed inspection.