Abstract: In a traditional method for automatically obtaining high-magnification images of defects by using an electron microscope for defect-reviewing of a semiconductor wafer, high-magnification images of a voltage contrast changing part are obtained in the case of defects generating voltage contrast change, this made difficult to observe defects themselves generating voltage contrast change. In the present invention, based on energy of secondary electron to be detected, after obtaining two types of images, namely an image making voltage contrast conspicuous easily, and an image not making it easily, and acquiring a shape change area adjacent to a voltage contrast change area based on this area as a defect location, a high-magnification image can automatically be obtained.

Abstract: In the case where a specimen is imaged by a scanning electron microscope, it is intended to acquire an image of a high quality having a noise component reduced, thereby to improve the precision of an image processing. The intensity distribution of a beam is calculated on the basis of an imaging condition or specimen information, and an image restoration is performed by using a resolving power deterioration factor other than the beam intensity distribution as a target of a deterioration mode, so that a high resolving power image can be acquired under various conditions. In the scanning electron microscope for semiconductor inspections and semiconductor measurements, the restored image is used for pattern size measurement, defect detections, defect classifications and so on, so that the measurements can be improved in precision and so that the defect detections and classifications can be made high precise.

Abstract: In the present invention, in order to realize both a reduction of an image detecting time and high quality image detection in a scanning electron microscope for measurement, inspection, defect review, or the like of semiconductor wafers, a low-magnification image is taken by using a large beam current; a high-magnification image is taken by using a small beam current; control amounts for correcting a change in luminance, a focus deviation, misalignment, and visual field misalignment of taken images, which are generated due to a variation of a beam current are saved in advance in a memory of an overall control system; and these amounts are corrected every time the beam current is switched, thereby making it possible to take the images without any adjustment operation after switching the currents.

Abstract: The present invention relates to a defect detection or observation method that detects fine defects in the course of defect inspection and observation, does not detect locations not constituting defects, or classifies a defect candidate as a grain phenomenon or other phenomenon that does not affect a product.

Abstract: In a scanning electron microscope, scanning region is set to be narrow, upon which focused electron beam is scanned, so that the focused electron beam can be irradiated at the almost same position by plural numbers of times, irrespective of movement of the stage or of moving of the stage during braking thereof, and upon that region to be scanned is irradiated the focused electron beam, by plural numbers of times, while changing the focal position, thereby forming an image thereof. From the image formed is calculated out a section, from which a focus-in position can be calculated out, and then the focus-in position is calculated out from that calculated section.

Abstract: A method and an apparatus for reviewing defects detected by an optical particle inspection system or an optical profile inspection system in detail by an electron microscope are provided. In order to putting defects to be reviewed in the viewing field of the electron microscope and reducing the size of the apparatus, the electron microscope reviews defects detected by an optical defect inspection system. In the electron microscope, an optical microscope for reviewing detects is arranged, and when focusing of this optical microscope is carried out, the illumination position and the detection position of the optical microscope are not changed to the sample.

Abstract: In order to achieve high throughput in a SEM-type defect-reviewing apparatus and method for automatically acquiring images of review defects present on samples, including: a cell comparison step subdivided into the steps of (a) providing a defect detection success ratio or defect detection success map due to at least a cell comparison scheme for each wafer or each chip, (b) selecting a review sequence of either the cell comparison scheme or a die comparison scheme on the basis of the provided defect detection success ratio or defect detection success map, (c) if the cell comparison scheme is selected, judging whether detection of the review defect is possible by executing the cell comparison scheme; and a die comparison step in which die comparison is performed if the judgment result indicates that the detection of the review defect is impossible, or if the die comparison scheme is selected in the selection step.

Abstract: A reviewing apparatus using a SEM and a method for reviewing defect according to the present invention includes the steps of: correcting alignment errors of coordinates of the large number of defect candidates output by the inspection apparatus; selecting a detailed inspection/review point on the basis of the distance between coordinates of each of the large number of defect candidates whose alignment errors have been corrected and a point of interest such as a hot spot; performing imaging by use of a detailed inspection apparatus to acquire an image at the position, and to acquire an image in proximity to the position; determining, from the acquired image, a detailed coordinate position of the defect detected by inspection apparatus; and on the basis of the acquired image and detailed defect coordinate position, judging whether or not the selected defect is a defect that is important for the process control.

Abstract: In a traditional method for automatically obtaining high-magnification images of defects by using an electron microscope for defect-reviewing of a semiconductor wafer, high-magnification images of a voltage contrast changing part are obtained in the case of defects generating voltage contrast change, this made difficult to observe defects themselves generating voltage contrast change. In the present invention, based on energy of secondary electron to be detected, after obtaining two types of images, namely an image making voltage contrast conspicuous easily, and an image not making it easily, and acquiring a shape change area adjacent to a voltage contrast change area based on this area as a defect location, a high-magnification image can automatically be obtained.

Abstract: In apparatuses for automatically acquiring and also for automatically classifying images of defects present on a sample such as a semiconductor wafer, a classifying system is provided which are capable of readily accepting even such a case that a large number of classification classes are produced based upon a request issued by a user, and also even such a case that a basis of the classification class is changed in a high frequency. When the user defines the classification classes, a device for designating attributes owned by the respective classification classes is provided. The classifying system automatically changes a connecting mode between an internally-provided rule-based classifier and an example-based classifier, so that such a classifying system which is fitted to the classification basis of the user is automatically constructed.

Abstract: Defect image display screens are capable of accurately presenting features of defects. On a thumbnail display screen of a defect, images likely to most clearly indicating features of the defect are determined in units of the defect from, for example, inspection information and a defect type, and then are displayed. On a detail display screen of a defect, for example, images for being displayed so as to clearly indicate features of the defect, and the display sequence thereof are determined in accordance with, for example, inspection information and a defect type, and then are displayed. Further, steps for acquiring a display image during or after defect image acquisition by using, for example, a different defect image acquisition apparatus and a different imaging condition in accordance with preliminarily specified rules are added to an imaging sequence (procedure).

Abstract: To realize reliable on-film/under-film defect classification (classification into 3 classes of on-film, under-film, and determination-disabled) with determination propriety determination, an on-film/under-film defect classification method and a method of narrowing a range of defect generation timing are given, the methods being robust to 4 variation factors, wherein an edge of a boundary line between a line pattern region and a base region is focused, and whether the edge is preserved between defect and reference images in a defective region is determined, thereby an on-film or under-film defect can be identified. Furthermore, a range of the defect generation timing can be narrowed based on an identification result of the on-film or under-film defect, and information of a defect classification class (defect type) such as particle defect or pattern defect as necessary.

Abstract: An apparatus and a method for automatically inspecting a defect by an electron beam using an X-ray detector. The composition of a defective portion is analyzed with higher rapidity and the cause of the defect is easily and accurately determined based on an X-ray spectrum. The X-ray spectrum and the image of foreign particles formed on a process QC wafer are registered as reference data, and the defects generated on a process wafer are classified by collation with the reference data. The use of both the X-ray spectrum and the detected image optimizes the operating conditions for X-ray detection. A defect of which the X ray is to be detected is selected based on the result of classification of defect images automatically collected, and the defect is classified according to the features including both the composition and the external appearance.

Abstract: An image picked up by a detection system capable of actualizing a three-dimensional inclination is usually poor in the signal-to-noise ratio, and it is difficult to stably detect minute defects. Images that actualize a three-dimensional inclination are picked up from opposed directions. The images are subject to subtraction and addition. The images improved in signal-to-noise ratio as compared with original images are calculated. The images calculated and improved in signal-to-noise ratio respectively of a defect portion and a reference portion are compared with each other. Regions differing in comparison results are detected as defects. As a result, minute defects can be inspected stably.

Abstract: A method and apparatus for reviewing defects of a semiconductor device is provided which involves detecting a defect on a SEM image taken at low magnification, and reviewing the defect on a SEM image taken at high magnification, and which can review a lot of defects in a short period of time thereby to improve the efficiency of defect review. In the present invention, the method for reviewing defects of a semiconductor device includes the steps of obtaining an image including a defect on the semiconductor device detected by a detection device by use of a scanning electron microscope at a first magnification, making a reference image from the image including the defect obtained at the first magnification, detecting the defect by comparing the image including the defect obtained at the first magnification to the reference image made from the image including the defect at the first magnification, and taking an image of the detected defect at a second magnification that is larger than the first magnification.

Abstract: A method to solve the problem of a technique generally used to detect a defect of a semiconductor by calculating the differential image based on pattern matching, which requires that a reference image must be picked up to pick up an image of the inspection position in an area with the semiconductor pattern having no periodicity, resulting in a low throughput. The image of the inspection position is divided into local areas, each local area is matched with the local area of the image already stored and the difference between the local areas thus matched is determined to extract a defect area.

Abstract: The present invention relates to high-speed acquisition of both a perpendicular observation image and a tilt observation image, in observation using a scanning electron microscope. An electron-beam observation apparatus includes: a first electro-optical system which scans a converged electron beam from a substantially perpendicular direction to a defect on a target wafer to be observed, and acquires a defect image signal with perpendicular observation by detecting a secondary electron image or a reflected electron image generated from the defect; and a second electro-optical system which scans a converged electron beam from a tilt direction to the defect, and acquires a defect image signal with tilt observation by detecting a secondary electron image or a reflected electron image generated from the defect.

Abstract: An apparatus for reviewing defects including an image processing section (defect classification device section) with a function of estimating a non-defective state (reference image) of a portion in which the defect exists by use of a defect image, and a function of judging criticality or non-flat state of the defect by use of the estimation result. It becomes possible to establish both of a high-throughput image collecting sequence in which any reference image is not acquired and high-precision defect classification, and then to realize both of a high performance classifying function and a high-throughput image collecting function in a defect reviewing apparatus which automatically collects and classifies images of defects existing on a sample of a semiconductor wafer or the like.

Abstract: A reviewing apparatus, for enabling to conduct detailed review (ADR) and/or defect classification (ADC), effectively, through making alignment of defects detected in an upstream inspecting apparatus into the reviewing apparatus, with certainty and at high accuracy, and further within a short time-period, comprises a defect selecting portion 240 for selecting or picking up a plural number of alignment candidates from a large numbers defects, upon defect inspection information, which is detected within the inspecting apparatus, an electron microscope 21 (30) for obtaining a SEM image of the plural number of alignment candidates, through picking up an image on each of the plural number of alignment candidates, which are selected or picked up, narrowly, and a determining portion 243 for calculating out characteristic quantities relating to the plural number of alignment candidates, upon basis of the obtained SEM images thereof, and for determining on suitableness/unsuitableness for use in alignment relating to th

Abstract: To acquire defect images even when a defect exists below an optically transparent film, an electron optical system of an electron microscope is set to a first imaging condition. A defect position of a specimen is set so as to fall within the visual field of the electron microscope, using position data of a defect of the specimen. The position of the defect is imaged by the electron microscope set to the first imaging condition to obtain a first image corresponding to the defect position. The first image is processed to determine whether a defect exists. The electron optical system is then set to a second imaging condition on the basis of the result of determination. A point imaged under the first imaging condition is imaged by the electron microscope set to the second imaging condition to acquire a second image corresponding to a defect position.