Abstract: An object of the invention is to provide a charged particle beam device capable of specifying an irradiation position of light on a sample when there is no mechanism for forming an image of backscattered electrons. The charged particle beam device according to the invention determines whether an irradiation position of a primary charged particle beam and an irradiation position of light match based on a difference between a first observation image acquired when the sample is irradiated with only the primary charged particle beam and a second observation image acquired when sample is irradiated with the light in addition to the primary charged particle beam. It is determined whether the irradiation position of the primary charged particle beam and the irradiation position of the light match using the first observation image and a measurement result by a light amount measuring device.

Abstract: The electron gun is provided with a first anode electrode and a second anode electrode to generate an acceleration and deceleration electric field. A lens electric field makes it possible to irradiate a sample with an electron beam emitted from a part outside an optical axis of the photoelectric film without being blocked by a differential exhaust diaphragm. A wide range of electron beams off-optical axis can be used even in a high-brightness photocathode that requires high vacuum. As a result, the photoelectric film and the electron gun can be extended in life, can be stabilized, and can be increased in brightness. Further, it is possible to facilitate a control of emitting electron beams from a plurality of positions on the photoelectric film, a timing control of emitting electron beams from a plurality of positions, a condition control of an electron beam in an electron microscope using electron beams.

Abstract: An electron beam device obtains contrast reflecting an electronic state of a sample with high sensitivity. The device includes an electron optical system which emits an electron beam to a sample and detects electrons emitted from the sample; a light pulse emission system that emits a light pulse to the sample; a synchronization processing unit that samples the emitted electrons; an image signal processing unit which forms an image by a detection signal output based upon the emitted electrons detected by the electron optical system; and a device control unit for setting a control condition of the electron optical system. The device control unit sets a sampling frequency for detection sampling of the emitted electrons to be greater than a value obtained by dividing the number of emissions of the light pulse per unit pixel time by the unit pixel time.

Abstract: A scanning electron beam apparatus which two-dimensionally scans a sample by an electron beam, to achieve high resolution even with a photoexcited electron source. The electron beam apparatus includes a photocathode including a substrate having a refractive index of more than 1.7 and a photoemissive film, a focusing lens configured to focus an excitation light toward the photocathode, an extractor electrode disposed facing the photocathode and configured to accelerate an electron beam generated from the photoemissive film by focusing the excitation light by the focusing lens and emitting the excitation light through the substrate, and an electron optics including a deflector configured to two-dimensionally scan a sample by the electron beam accelerated by the extractor electrode. For a spherical aberration of the focusing lens, a root mean square of the spherical aberration on the photoemissive film is equal to or less than 1/14 of a wavelength of the excitation light.

Abstract: An electron beam device obtains contrast reflecting an electronic state of a sample with high sensitivity. The device includes an electron optical system which emits an electron beam to a sample and detects electrons emitted from the sample; a light pulse emission system that emits a light pulse to the sample; a synchronization processing unit that samples the emitted electrons; an image signal processing unit which forms an image by a detection signal output based upon the emitted electrons detected by the electron optical system; and a device control unit for setting a control condition of the electron optical system. The device control unit sets a sampling frequency for detection sampling of the emitted electrons to be greater than a value obtained by dividing the number of emissions of the light pulse per unit pixel time by the unit pixel time.

Abstract: To provide an electron microscope capable of performing the switching-over between normal illumination and annular illumination, wide-area irradiation, an interference pattern as desired or normal illumination in an expeditious and readily manner or achieving a better S/N ratio, the electron microscope comprises a photocathode 101 with negative electron affinity in use; an excitation optical system to excite the photocathode; and an electron optics system to irradiate an electron beam 13 generated from the photocathode by excitation light 12 irradiated through the excitation optical system onto a sample, the excitation optical system including a light source device 107 for the excitation light; and an optical modulation means 108 which is disposed in an optical path of the excitation light to perform spatial phase modulation to the excitation light.

Abstract: An object of the invention is to provide a charged particle beam device capable of specifying an irradiation position of light on a sample when there is no mechanism for forming an image of backscattered electrons. The charged particle beam device according to the invention determines whether an irradiation position of a primary charged particle beam and an irradiation position of light match based on a difference between a first observation image acquired when the sample is irradiated with only the primary charged particle beam and a second observation image acquired when sample is irradiated with the light in addition to the primary charged particle beam. It is determined whether the irradiation position of the primary charged particle beam and the irradiation position of the light match using the first observation image and a measurement result by a light amount measuring device.

Abstract: Provided is a scanning electron microscope provided with an energy selection and detection function for a SE1 generated on a sample while suppressing the detection amount of a SE3 excited due to a BSE in the scanning electron microscope that does not apply a deceleration method.

Abstract: A charged particle beam apparatus includes: an electromagnetic wave generation source 16 that generates an electromagnetic wave with which a sample is irradiated; a charged particle optical system that includes a pulsing mechanism 3 and irradiates the sample with a focused charged particle beam; a detector 10 that detects an emitted electron emitted by an interaction between the charged particle beam and the sample; a first irradiation control unit 15 that controls the electromagnetic wave generation source and irradiates the sample with a pulsed electromagnetic wave to generate an excited carrier; a second irradiation control unit 14 that controls the pulsing mechanism and irradiates an electromagnetic wave irradiation region of the sample with a pulsed charged particle beam; and a timing control unit 13.

Abstract: A spin polarimeter includes: a particle beam source or a photon beam source that is a probe for a sample; a sample chamber in which the sample is accommodated; a spin detector that includes a target to be irradiated with an electron generated from the sample by a particle beam or a photon beam from the probe, and a target chamber in which the target is accommodated, and is configured to detect a spin of the sample by detecting an electron scattered on the target; a first exhaust system that is configured to exhaust the sample chamber; a second exhaust system that is configured to exhaust the target chamber; and an orifice that is disposed between the target chamber and the sample chamber.

Abstract: Signal electrons with high energy that pass near an optical axis, for example, backscattered electrons or secondary electrons in a booster optical system, can be detected. Therefore, there is provided a charged particle beam device including: a charged particle beam source configured to generate a charged particle beam; an objective lens configured to focus the charged particle beam to a sample; and a first charged particle detecting element disposed between the charged particle beam source and the objective lens and configured to detect charged particles generated by an interaction between the charged particle beam and the sample, in which a detection surface of the first charged particle detecting element is disposed on a center axis of the objective lens.

Abstract: To provide an electron microscope capable of performing the switching-over between normal illumination and annular illumination, wide-area irradiation, an interference pattern as desired or normal illumination in an expeditious and readily manner or achieving a better S/N ratio, the electron microscope comprises a photocathode 101 with negative electron affinity in use; an excitation optical system to excite the photocathode; and an electron optics system to irradiate an electron beam 13 generated from the photocathode by excitation light 12 irradiated through the excitation optical system onto a sample, the excitation optical system including a light source device 107 for the excitation light; and an optical modulation means 108 which is disposed in an optical path of the excitation light to perform spatial phase modulation to the excitation light.

Abstract: A measuring apparatus that irradiates a sample with a charged particle beam to observe the sample includes a particle source that outputs the charged particle beam, a lens that collects the charged particle beam, a detector that detects a signal of emitted electrons emitted from the sample which is irradiated with the charged particle beam, and a control device that controls the output of the charged particle beam and the detection of the signal of the emitted electrons in accordance with an observation condition, in which the control device sets, as the observation condition, a first parameter for controlling an irradiation cycle of the charged particle beam, a second parameter for controlling a pulse width of the pulsed charged particle beam, and a third parameter for controlling detection timing of the signal of the emitted electron within the irradiation time of the pulsed charged particle beam, and the third parameter is determined in accordance with a difference in intensity of signals of the plurality

Abstract: A spin polarimeter includes: a particle beam source or a photon beam source that is a probe for a sample; a sample chamber in which the sample is accommodated; a spin detector that includes a target to be irradiated with an electron generated from the sample by a particle beam or a photon beam from the probe, and a target chamber in which the target is accommodated, and is configured to detect a spin of the sample by detecting an electron scattered on the target; a first exhaust system that is configured to exhaust the sample chamber; a second exhaust system that is configured to exhaust the target chamber; and an orifice that is disposed between the target chamber and the sample chamber.

Abstract: A charged particle beam device includes: a charged particle source that emits a charged particle beam; a boosting electrode disposed between the charged particle source and a sample to form a path of the charged particle beam and to accelerate and decelerate the charged particle beam; a first pole piece that covers the boosting electrode; a second pole piece that covers the first pole piece; a first lens coil disposed outside the first pole piece and inside the second pole piece to form a first lens; a second lens coil disposed outside the second pole piece to form a second lens; and a control electrode formed between a distal end portion of the first pole piece and a distal end portion of the second pole piece to control an electric field formed between the sample and the distal end portion of the second pole piece.

Abstract: In a charged particle beam apparatus is provided with an optical image capturing apparatus having an angle different from that of a column, a sample may collide with other components when the sample is faced toward the optical image capturing apparatus. The charged particle beam apparatus includes a stage configured to place a sample thereon and to move the sample inside a sample chamber; a column configured to observe the sample by irradiating a charged particle beam on the sample; a first image capturing apparatus configured to observe a surface of the sample irradiated with the charged particle beam from an angle different from that of the column; and a control unit configured to, when observing the sample via the first image capturing apparatus, separate the sample from the column and to tilt the sample through the stage to face toward the first image capturing apparatus.

Abstract: To provide an electron microscope capable of performing the switching-over between normal illumination and annular illumination, wide-area irradiation, an interference pattern as desired or normal illumination in an expeditious and readily manner or achieving a better S/N ratio, the electron microscope comprises a photocathode 101 with negative electron affinity in use; an excitation optical system to excite the photocathode; and an electron optics system to irradiate an electron beam 13 generated from the photocathode by excitation light 12 irradiated through the excitation optical system onto a sample, the excitation optical system including a light source device 107 for the excitation light; and an optical modulation means 108 which is disposed in an optical path of the excitation light to perform spatial phase modulation to the excitation light.

Abstract: A charged particle beam apparatus includes: an electromagnetic wave generation source 16 that generates an electromagnetic wave with which a sample is irradiated; a charged particle optical system that includes a pulsing mechanism 3 and irradiates the sample with a focused charged particle beam; a detector 10 that detects an emitted electron emitted by an interaction between the charged particle beam and the sample; a first irradiation control unit 15 that controls the electromagnetic wave generation source and irradiates the sample with a pulsed electromagnetic wave to generate an excited carrier; a second irradiation control unit 14 that controls the pulsing mechanism and irradiates an electromagnetic wave irradiation region of the sample with a pulsed charged particle beam; and a timing control unit 13.

Abstract: Provided is a scanning electron microscope provided with an energy selection and detection function for a SE1 generated on a sample while suppressing the detection amount of a SE3 excited due to a BSE in the scanning electron microscope that does not apply a deceleration method.

Abstract: Signal electrons with high energy that pass near an optical axis, for example, backscattered electrons or secondary electrons in a booster optical system, can be detected. Therefore, there is provided a charged particle beam device including: a charged particle beam source configured to generate a charged particle beam; an objective lens configured to focus the charged particle beam to a sample; and a first charged particle detecting element disposed between the charged particle beam source and the objective lens and configured to detect charged particles generated by an interaction between the charged particle beam and the sample, in which a detection surface of the first charged particle detecting element is disposed on a center axis of the objective lens.