Abstract: A composite charged particle beams apparatus of the present invention allows a sample (5)'s cross-section or edge plane to be observed by using an electron beam (2b), the sample (5)'s cross-section or edge plane being fabricated by using an ion beam (1b). The radiation device includes a detector (7) which is capable of detecting low-loss back-scattered electrons (12) including elastically-scattered electrons (11), these electrons (12, 11) being induced by the electron beam (2b) with which the sample (5)'s cross-section or edge plane is irradiated. Moreover, it is desirable that the detector (7) be set up in a space outside an electron-beam column (2a). The above-described configuration has allowed implementation of the high-resolving-power and low-damage SEM observation of the surface information about material and composition of the sample's FIB-fabricated cross-section or edge plane.

Abstract: An object of the present invention is related to detecting of a detection signal at an optimum position in such a case that a sample plane is inclined with respect to a charged particle beam. The present invention is related to a charged particle beam apparatus for irradiating a charged particle beam to a sample, in which a detector is moved to a plurality of desirable positions around the sample so as to optimize positions of the detector. In accordance with the present invention, since it is possible to obtain an optimum detection signal in response to an attitude and a shape of the sample, a highly accurate sample observation, for instance, an SEM observation, an STEM observation, and an FIB observation can be carried out. Moreover, in an FIB-SEM apparatus, it is possible to highly accurately detect an end point of an FIB process.

Abstract: A charged particle beam apparatus facilitating adjusting a beam center axis of a charged particle beam in a case where optical conditions are modified or in a case where the beam center axis of the charged particle beam is moved due to state variation of the apparatus. When the beam center axis of a primary charged particle beam is adjusted with a deflector (aligner), a first processing step for measuring the sensitivity of the aligner and a second processing step for detecting the deviation between the center of the primary charged particle beam and the center of the objective aperture are provided. The charged particle beam apparatus determines the aligner set values, using the aligner sensitivity measured in the first processing step and the amount of deviation detected in the second processing step, such that the primary charged particle beam passes through the center of the objective aperture and controls the aligner using the aligner set values.

Abstract: In a defect inspection apparatus which combines a plurality of probes for measuring electric properties of a specimen including a fine circuit line pattern with a charged particle beam apparatus, the charged particle beam apparatus reduces a degradation in resolution even with an image-shift of ±75 ?m or more. The defect inspection apparatus has a CAD navigation function associated with an image-shift function. The CAD navigation function uses coordinates for converting an image-shift moving amount to a DUT stage moving amount in communications between an image processing unit for processing charged particle beam images and a memory for storing information on circuit line patterns. The defect inspection provides the user with significantly improved usability.

Abstract: In a defect inspection apparatus which combines a plurality of probes for measuring electric properties of a specimen including a fine circuit line pattern with a charged particle beam apparatus, the charged particle beam apparatus reduces a degradation in resolution even with an image-shift of ±75 ?m or more. The defect inspection apparatus has a CAD navigation function associated with an image-shift function. The CAD navigation function uses coordinates for converting an image-shift moving amount to a DUT stage moving amount in communications between an image processing unit for processing charged particle beam images and a memory for storing information on circuit line patterns. The defect inspection provides the user with significantly improved usability.

Abstract: There is provided a compact charged particle beam apparatus with a non-evaporable getter pump which maintains high vacuum even during emission of an electron beam without generating foreign particles. The apparatus comprises: a charged particle source; a charged particle optics which focuses a charged particle beam emitted from the charged particle source on a sample and performs scanning; and means of vacuum pumping which evacuates the charged particle optics. The means of vacuum pumping has a differential pumping structure with two or more vacuum chambers connected through an opening in series. A pump made of non-evaporable getter alloy is placed in an upstream vacuum chamber with a high degree of vacuum, and a gas absorbing surface of the non-evaporable getter alloy is fixed without contact with another part.

Abstract: A small-sized charged particle beam apparatus capable of maintaining high vacuum even during emission of an electron beam is provided. A nonevaporative getter pump is placed upstream of differential pumping of an electron optical system of the charged particle beam apparatus, and a minimum number of ion pumps are placed downstream, so that both the pumps are used in combination. Further, by mounting a detachable coil on an electron gun part, the inside of a column can be maintained under high vacuum with a degree of vacuum in the order of 10?8 Pa.

Abstract: An electron beam device includes an electron gun section having an internal space kept at an ultrahigh vacuum level for generating a primary electron beam, a mirror section having an internal space kept at a vacuum level lower than that of the electron gun section for scanning a specimen with an electron probe of the primary electron beam generated in the electron gun section and focused on the specimen, a differential exhaust diaphragm for providing communication in internal space between the electron gun section and the mirror section and passing the primary electron beam, and a control section for controlling respective constituent elements in the electron beam device. A diaphragm mechanism having a plurality of different diaphragm aperture diameters is provided between a second anode and a first condenser lens.

Abstract: In a defect inspection apparatus which combines a plurality of probes for measuring electric properties of a specimen including a fine circuit line pattern with a charged particle beam apparatus, the charged particle beam apparatus reduces a degradation in resolution even with an image-shift of ±75 ?m or more. The defect inspection apparatus has a CAD navigation function associated with an image-shift function. The CAD navigation function uses coordinates for converting an image-shift moving amount to a DUT stage moving amount in communications between an image processing unit for processing charged particle beam images and a memory for storing information on circuit line patterns. The defect inspection provides the user with significantly improved usability.

Abstract: In a defect inspection apparatus which combines a plurality of probes for measuring electric properties of a specimen including a fine circuit line pattern with a charged particle beam apparatus, the charged particle beam apparatus reduces a degradation in resolution even with an image-shift of ±75 ?m or more. The defect inspection apparatus has a CAD navigation function associated with an image-shift function. The CAD navigation function uses coordinates for converting an image-shift moving amount to a DUT stage moving amount in communications between an image processing unit for processing charged particle beam images and a memory for storing information on circuit line patterns. The defect inspection provides the user with significantly improved usability.

Abstract: A charged particle beam apparatus facilitating adjusting the beam center axis of a charged particle beam in a case where optical conditions are modified or in a case where the beam center axis of the charged particle beam is moved due to state variation of the apparatus. When the beam center axis of a primary charged particle beam is adjusted with a deflector (aligner), a processing step (1) for measuring the sensitivity of the aligner and a processing step (2) for detecting the deviation between the center of the primary charged particle beam and the center of the objective aperture are provided. The charged particle beam apparatus has means for determining the aligner set values, using the aligner sensitivity measured in the processing step (1) and the amount of deviation detected in the processing step (2), such that the primary charged particle beam passes through the center of the objective aperture and controlling the aligner using the aligner set values.

Abstract: There is provided a compact charged particle beam apparatus with a non-evaporable getter pump which maintains high vacuum even during emission of an electron beam without generating foreign particles. The apparatus comprises: a charged particle source; a charged particle optics which focuses a charged particle beam emitted from the charged particle source on a sample and performs scanning; and means of vacuum pumping which evacuates the charged particle optics. The means of vacuum pumping has a differential pumping structure with two or more vacuum chambers connected through an opening in series. A pump made of non-evaporable getter alloy is placed in an upstream vacuum chamber with a high degree of vacuum, and a gas absorbing surface of the non-evaporable getter alloy is fixed without contact with another part.

Abstract: An electron beam device includes an electron gun section having an internal space kept at an ultrahigh vacuum level for generating a primary electron beam, a mirror section having an internal space kept at a vacuum level lower than that of the electron gun section for scanning a specimen with an electron probe of the primary electron beam generated in the electron gun section and focused on the specimen, a differential exhaust diaphragm for providing communication in internal space between the electron gun section and the mirror section and passing the primary electron beam, and a control section for controlling respective constituent elements in the electron beam device. A diaphragm mechanism having a plurality of different diaphragm aperture diameters is provided between a second anode and a first condenser lens.

Abstract: In a defect inspection apparatus which combines a plurality of probes for measuring electric properties of a specimen including a fine circuit line pattern with a charged particle beam apparatus, the charged particle beam apparatus reduces a degradation in resolution even with an image-shift of ±75 ?m or more. The defect inspection apparatus has a CAD navigation function associated with an image-shift function. The CAD navigation function uses coordinates for converting an image-shift moving amount to a DUT stage moving amount in communications between an image processing unit for processing charged particle beam images and a memory for storing information on circuit line patterns. The defect inspection provides the user with significantly improved usability.

Abstract: A small-sized charged particle beam apparatus capable of maintaining high vacuum even during emission of an electron beam is provided. A nonevaporative getter pump is placed upstream of differential pumping of an electron optical system of the charged particle beam apparatus, and a minimum number of ion pumps are placed downstream, so that both the pumps are used in combination. Further, by mounting a detachable coil on an electron gun part, the inside of a column can be maintained under high vacuum with a degree of vacuum in the order of 10?8 Pa.

Abstract: In a defect inspection apparatus which combines a plurality of probes for measuring electric properties of a specimen including a fine circuit line pattern with a charged particle beam apparatus, the charged particle beam apparatus reduces a degradation in resolution even with an image-shift of ±75 ?m or more. The defect inspection apparatus has a CAD navigation function associated with an image-shift function. The CAD navigation function uses coordinates for converting an image-shift moving amount to a DUT stage moving amount in communications between an image processing unit for processing charged particle beam images and a memory for storing information on circuit line patterns. The defect inspection provides the user with significantly improved usability.

Abstract: In a defect inspection apparatus which combines a plurality of probes for measuring electric properties of a specimen including a fine circuit line pattern with a charged particle beam apparatus, the charged particle beam apparatus reduces a degradation in resolution even with an image-shift of ±75 ?m or more. The defect inspection apparatus has a CAD navigation function associated with an image-shift function. The CAD navigation function uses coordinates for converting an image-shift moving amount to a DUT stage moving amount in communications between an image processing unit for processing charged particle beam images and a memory for storing information on circuit line patterns. The defect inspection provides the user with significantly improved usability.