Patents by Inventor Toshihiko Nagase
Toshihiko Nagase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8009465Abstract: A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.Type: GrantFiled: February 2, 2009Date of Patent: August 30, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Masahiko Nakayama, Tadashi Kai, Tatsuya Kishi, Yoshiaki Fukuzumi, Toshihiko Nagase, Sumio Ikegawa, Hiroaki Yoda
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Patent number: 7957184Abstract: The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.Type: GrantFiled: May 28, 2010Date of Patent: June 7, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Masatoshi Yoshikawa, Eiji Kitagawa, Tadaomi Daibou, Toshihiko Nagase, Tatsuya Kishi, Hiroaki Yoda
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Publication number: 20110116305Abstract: A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.Type: ApplicationFiled: January 25, 2011Publication date: May 19, 2011Inventors: Makoto NAGAMINE, Toshihiko Nagase, Sumio Ikegawa, Katsuya Nishiyama, Masatoshi Yoshikawa
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Patent number: 7932513Abstract: A magnetic random access memory includes a bit line running in a first direction, a first word line running in a second direction different from the first direction, and a memory element having a magnetoresistive effect element including a fixed layer having a fixed magnetization direction, a recording layer having a reversible magnetization direction, and a nonmagnetic layer formed between the fixed layer and the recording layer, the magnetization directions in the fixed layer and the recording layer being perpendicular to a film surface, and a heater layer in contact with the magnetoresistive effect element, the memory element being connected to the bit line, and formed to oppose a side surface of the first word line such that the memory element is insulated from the first word line.Type: GrantFiled: March 6, 2008Date of Patent: April 26, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Keiji Hosotani, Yoshiaki Asao, Toshihiko Nagase
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Patent number: 7924607Abstract: A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.Type: GrantFiled: March 13, 2008Date of Patent: April 12, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Masatoshi Yoshikawa, Eiji Kitagawa, Tadashi Kai, Toshihiko Nagase, Tatsuya Kishi, Hiroaki Yoda
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Patent number: 7920361Abstract: It is made possible to provide a magnetoresistive effect element that can reverse magnetization direction with a low current, having low areal resistance (RA) and a high TMR ratio. A magnetoresistive effect element includes: a film stack that includes a magnetization free layer including a magnetic layer in which magnetization direction is changeable, a magnetization pinned layer including a magnetic layer in which magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, the intermediate layer being an oxide containing boron (B) and an element selected from the group consisting of Ca, Mg, Sr, Ba, Ti, and Sc. Current is applied bidirectionally between the magnetization pinned layer and the magnetization free layer through the intermediate layer, so that the magnetization of the magnetization free layer is reversible.Type: GrantFiled: August 23, 2007Date of Patent: April 5, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Masatoshi Yoshikawa, Tadashi Kai, Toshihiko Nagase, Eiji Kitagawa, Tatsuya Kishi, Hiroaki Yoda
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Publication number: 20110073970Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.Type: ApplicationFiled: September 10, 2010Publication date: March 31, 2011Inventors: Tadashi Kai, Katsuya Nishiyama, Toshihiko Nagase, Masatoshi Yoshikawa, Eiji Kitagawa, Tadaomi Daibou, Makoto Nagamine, Masahiko Nakayama, Naoharu Shimomura, Hiroaki Yoda, Kei Yakushiji, Shinji Yuasa, Hitoshi Kubota, Taro Nagahama, Akio Fukushima, Koji Ando
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Patent number: 7898846Abstract: A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.Type: GrantFiled: May 22, 2009Date of Patent: March 1, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Makoto Nagamine, Toshihiko Nagase, Sumio Ikegawa, Katsuya Nishiyama, Masatoshi Yoshikawa
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Patent number: 7858650Abstract: A medicinal composition for inhalation containing a continuous-release type prodrug of an EP2 agonist topically exhibits a prolonged bronchodilating and antiinflammatory effects. Namely, the medicinal composition for inhalation containing a continuous-release type prodrug of an EP2 agonist is useful as a safe preventive and/or a remedy for respiratory diseases (for example, asthma, pulmonary injury, pulmonary fibrosis, pulmonary emphysema, bronchitis, chronic obstructive pulmonary disease, adult respiratory distress syndrome, cystic fibrosis, pulmonary hypertension or the like) without causing any systemic effect such as lowering blood pressure. Thus, a safe and useful remedy for respiratory diseases is provided.Type: GrantFiled: October 21, 2005Date of Patent: December 28, 2010Assignee: Ono Pharmaceutical Co., Ltd.Inventors: Shigeki Yamamoto, Tsutomu Shiroya, Michiaki Kadode, Toru Maruyama, Kousuke Tani, Toshihiko Nagase
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Patent number: 7848059Abstract: A magnetoresistive effect element includes a magnetization fixed layer having substantially fixed magnetization direction. A magnetization variable layer has a variable magnetization direction, consists of a magnetic alloy that has a BCC structure and is expressed by Fe1-x-yCoxNiy (0?x+y?1, 0?x?1, 0?y?1), and contains at least one additive element of V, Cr, and Mn in a range of 0<a?20 at % (a is a content). An intermediate layer is disposed between the magnetization fixed layer and the magnetization variable layer and consists of a nonmagnetic material. The magnetization direction of the magnetization variable layer is switched by a bidirectional current passing through the magnetization fixed layer, the intermediate layer, and the magnetization variable layer.Type: GrantFiled: September 20, 2007Date of Patent: December 7, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Masatoshi Yoshikawa, Tadashi Kai, Toshihiko Nagase, Eiji Kitagawa, Tatsuya Kishi, Hiroaki Yoda
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Publication number: 20100244163Abstract: A magnetoresistive element includes a stabilization layer, a nonmagnetic layer, a spin-polarization layer provided between the stabilization layer and the nonmagnetic layer, the spin-polarization layer having magnetic anisotropy in a perpendicular direction, and a magnetic layer provided on a side of the nonmagnetic layer opposite to a side on which the spin-polarization layer is provided. The stabilization layer has a lattice constant smaller than that of the spin-polarization layer in an in-plane direction. The spin-polarization layer contains at least one element selected from a group consisting of cobalt (Co) and iron (Fe), has a body-centered tetragonal (BCT) structure, and has a lattice constant ratio c/a of 1.10 (inclusive) to 1.35 (inclusive) when a perpendicular direction is a c-axis and an in-plane direction is an a-axis.Type: ApplicationFiled: March 3, 2010Publication date: September 30, 2010Inventors: Tadaomi Daibou, Toshihiko Nagase, Eiji Kitagawa, Masatoshi Yoshikawa, Katsuya Nishiyama, Makoto Nagamine, Tatsuya Kishi, Hiroaki Yoda
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Publication number: 20100230770Abstract: The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.Type: ApplicationFiled: May 28, 2010Publication date: September 16, 2010Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masatoshi Yoshikawa, Eiji Kitagawa, Tadaomi Daibou, Toshihiko Nagase, Tatsuya Kishi, Hiroaki Yoda
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Patent number: 7768824Abstract: The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.Type: GrantFiled: September 16, 2008Date of Patent: August 3, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Masatoshi Yoshikawa, Eiji Kitagawa, Tadaomi Daibou, Toshihiko Nagase, Tatsuya Kishi, Hiroaki Yoda
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Publication number: 20100118600Abstract: A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0?Ms<?{square root over ( )}{Jw/(6?At)}. Jw is a write current density, t is a thickness of the free layer, A is a constant.Type: ApplicationFiled: January 12, 2010Publication date: May 13, 2010Inventors: Toshihiko NAGASE, Masatoshi Yoshikawa, Eiji Kitagawa, Masahiko Nakayama, Tadashi Kai, Tatsuya Kishi, Hiroaki Yoda
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Patent number: 7663197Abstract: A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0?Ms<?{square root over ( )}{Jw/(6?At)}. Jw is a write current density, t is a thickness of the free layer, A is a constant.Type: GrantFiled: September 22, 2006Date of Patent: February 16, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Toshihiko Nagase, Masatoshi Yoshikawa, Eiji Kitagawa, Masahiko Nakayama, Tadashi Kai, Tatsuya Kishi, Hiroaki Yoda
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Publication number: 20090243008Abstract: A magnetoresistive element includes an underlying layer having a cubic or tetragonal crystal structure oriented in a (001) plane, a first magnetic layer provided on the underlying layer, having perpendicular magnetic anisotropy, and having an fct structure oriented in a (001) plane, a non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the non-magnetic layer, and having perpendicular magnetic anisotropy. An in-plane lattice constant a1 of the underlying layer and an in-plane lattice constant a2 of the first magnetic layer satisfy the following equation in which b is a magnitude of Burgers vector of the first magnetic layer, ? is an elastic modulus of the first magnetic layer, and hc is a thickness of the first magnetic layer.Type: ApplicationFiled: March 24, 2009Publication date: October 1, 2009Inventors: Eiji Kitagawa, Masatoshi Yoshikawa, Toshihiko Nagase, Tadaomi Daibou, Makoto Nagamine, Katsuya Nishiyama, Tatsuya Kishi, Hiroaki Yoda
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Patent number: 7596015Abstract: A magnetoresistive element includes a free layer which contains a magnetic material and has an fct crystal structure with a (001) plane oriented, the free layer having a magnetization which is perpendicular to a film plane and has a direction to be changeable by spin-polarized electrons, a first nonmagnetic layer and a second nonmagnetic layer which sandwich the free layer and have one of a tetragonal crystal structure and a cubic crystal structure, and a fixed layer which is provided on only one side of the free layer and on a surface of the first nonmagnetic layer opposite to a surface with the free layer and contains a magnetic material, the fixed layer having a magnetization which is perpendicular to a film plane and has a fixed direction.Type: GrantFiled: August 1, 2007Date of Patent: September 29, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Eiji Kitagawa, Toshihiko Nagase, Masatoshi Yoshikawa, Katsuya Nishiyama, Tatsuya Kishi, Hiroaki Yoda
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Publication number: 20090224342Abstract: A magnetoresistive effect element includes a reference layer, a recording layer, and a nonmagnetic layer. The reference layer is made of a magnetic material, has an invariable magnetization which is perpendicular to a film surface. The recording layer is made of a magnetic material, has a variable magnetization which is perpendicular to the film surface. The nonmagnetic layer is arranged between the reference layer and the recording layer. A critical diameter which is determined by magnetic anisotropy, saturation magnetization, and switched connection of the recording layer and has a single-domain state as a unique stable state or a critical diameter which has a single-domain state as a unique stable state and is inverted while keeping the single-domain state in an inverting process is larger than an element diameter of the magnetoresistive effect element.Type: ApplicationFiled: October 9, 2008Publication date: September 10, 2009Inventors: Masahiko NAKAYAMA, Kay Yakushiji, Sumio Ikegawa, Shinji Yuasa, Tadashi Kai, Toshihiko Nagase, Minoru Amano, Hisanori Aikawa, Tatsuya Kishi, Hiroaki Yoda
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Publication number: 20090225587Abstract: A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.Type: ApplicationFiled: May 22, 2009Publication date: September 10, 2009Inventors: Makoto Nagamine, Toshihiko Nagase, Sumio Ikegawa, Katsuya Nishiyama, Masatoshi Yoshikawa
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Patent number: 7576129Abstract: The present invention relates to a carboxylic acid compound of formula (I): wherein R1 is H, alkyl; m is 2, 3; n is 0-2; R2 is phenyl, naphthyl, benzofuran, benzothiophene; Q is —CH2—O-Cyc1, —CH2-Cyc2, -L-Cyc3; R3a and R3b each independently is hydrogen, alkyl or taken together form tetrahydro-2H-pyran; a pharmaceutically acceptable salt thereof, a method for producing a process of the preparation thereof and a pharmaceutical agent comprising the same as an active ingredient. The compound of formula (I) have an antagonizing activity against PGE2 receptor, specifically EP3 receptor which is subtype thereof, and are useful for the prevention and/or treatment of itching, pain, urinary disturbance or stress disease.Type: GrantFiled: February 6, 2004Date of Patent: August 18, 2009Assignee: Ono Pharmaceutical Co., Ltd.Inventors: Masaki Asada, Kaoru Kobayashi, Masami Narita, Kazutoyo Sato, Atsushi Kinoshita, Toshihiko Nagase, Ken Yoshikawa