Patents by Inventor Toshihiko Nagase
Toshihiko Nagase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120163070Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer with a perpendicular and variable magnetization, a second magnetic layer with a perpendicular and invariable magnetization, and a first nonmagnetic layer between the first and second magnetic layer. The first magnetic layer has a laminated structure of first and second ferromagnetic materials. A magnetization direction of the first magnetic layer is changed by a current which pass through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer. A perpendicular magnetic anisotropy of the second ferromagnetic material is smaller than that of the first ferromagnetic material. A film thickness of the first ferromagnetic material is thinner than that of the second ferromagnetic material.Type: ApplicationFiled: February 28, 2012Publication date: June 28, 2012Inventors: Toshihiko Nagase, Tadashi Kai, Katsuya Nishiyama, Eiji Kitagawa, Tadaomi Daibou, Masahiko Nakayama, Makoto Nagamine, Shigeto Fukatsu, Masatoshi Yoshikawa, Hiroaki Yoda
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Patent number: 8208292Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.Type: GrantFiled: January 3, 2012Date of Patent: June 26, 2012Assignees: Kabushiki Kaisha Toshiba, National Institute of Advanced Industrial Science and TechnologyInventors: Tadashi Kai, Katsuya Nishiyama, Toshihiko Nagase, Masatoshi Yoshikawa, Eiji Kitagawa, Tadaomi Daibou, Makoto Nagamine, Masahiko Nakayama, Naoharu Shimomura, Hiroaki Yoda, Kei Yakushiji, Shinji Yuasa, Hitoshi Kubota, Taro Nagahama, Akio Fukushima, Koji Ando
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Publication number: 20120099369Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.Type: ApplicationFiled: January 3, 2012Publication date: April 26, 2012Inventors: Tadashi KAI, Katsuya Nishiyama, Toshihiko Nagase, Masatoshi Yoshikawa, Eiji Kitagawa, Tadaomi Daibou, Makoto Nagamine, Masahiko Nakayama, Naoharu Shimomura, Hiroaki Yoda, Kei Yakushiji, Shinji Yuasa, Hitoshi Kubota, Taro Nagahama, Akio Fukushima, Koji Ando
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Publication number: 20120094990Abstract: A compound represented by formula (I), wherein R1 represents a hydrogen atom, etc., R2 and R3 each independently represents a hydrogen atom, optionally oxidized C1-4 alkyl group or optionally protected hydroxyl group, or R2 and R3 taken together represent optionally oxidized C2-5 alkylene group, R4 represents an optionally oxidized C1-6 alkyl group, etc., R5 represents an optionally oxidized C1-6 alkyl group, etc., R6 represents an optionally oxidized C1-6 alkyl group, etc., m represents 0 or an integer from 1 to 3, n represents 0 or an integer from 1 to 4, and i represents 0 or an integer from 1 to 7.Type: ApplicationFiled: August 11, 2008Publication date: April 19, 2012Inventors: Atsushi Naganawa, Toshihiko Nagase
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Publication number: 20120088125Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.Type: ApplicationFiled: September 19, 2011Publication date: April 12, 2012Applicants: NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY, KABUSHIKI KAISHA TOSHIBAInventors: Katsuya NISHIYAMA, Wu Feng, Chunlan Feng, Shigemi Mizukami, Terunobu Miyazaki, Hiroaki Yoda, Tadashi Kai, Tatsuya Kishi, Daisuke Watanabe, Mikihiko Oogane, Yasuo Ando, Masatoshi Yoshikawa, Toshihiko Nagase, Eiji Kitagawa, Tadaomi Daibou, Makoto Nagamine
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Patent number: 8154915Abstract: The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.Type: GrantFiled: May 20, 2011Date of Patent: April 10, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Masatoshi Yoshikawa, Eiji Kitagawa, Tadaomi Daibou, Toshihiko Nagase, Tatsuya Kishi, Hiroaki Yoda
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Patent number: 8143684Abstract: A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.Type: GrantFiled: January 25, 2011Date of Patent: March 27, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Makoto Nagamine, Toshihiko Nagase, Sumio Ikegawa, Katsuya Nishiyama, Masatoshi Yoshikawa
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Publication number: 20120069640Abstract: A magnetoresistive element according to an embodiment includes: a first and second magnetic layers having an easy axis of magnetization in a direction perpendicular to a film plane; and a first nonmagnetic layer interposed between the first and second magnetic layers, at least one of the first and second magnetic layers including a structure formed by stacking a first and second magnetic films, the second magnetic film being located closer to the first nonmagnetic layer, the second magnetic film including a structure formed by repeating stacking of a magnetic material layer and a nonmagnetic material layer at least twice, the nonmagnetic material layers of the second magnetic film containing at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V, and Cr, one of the first and second magnetic layers having a magnetization direction that is changed by applying a current.Type: ApplicationFiled: September 14, 2011Publication date: March 22, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Toshihiko Nagase, Tadashi Kai, Makoto Nagamine, Katsuya Nishiyama, Eiji Kitagawa, Tadaomi Daibou, Koji Ueda, Hiroaki Yoda, Kay Yakushiji, Shinji Yuasa, Hitoshi Kubota, Taro Nagahama, Akio Fukushima, Koji Ando
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Publication number: 20120070695Abstract: According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.Type: ApplicationFiled: September 16, 2011Publication date: March 22, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Eiji Kitagawa, Tadaomi Daibou, Tadashi Kai, Toshihiko Nagase, Kenji Noma, Hiroaki Yoda
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Publication number: 20120068285Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more.Type: ApplicationFiled: September 16, 2011Publication date: March 22, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Eiji KITAGAWA, Tadaomi Daibou, Yutaka Hashimoto, Masaru Tokou, Tadashi Kai, Makoto Nagamine, Toshihiko Nagase, Katsuya Nishiyama, Koji Ueda, Hiroaki Yoda, Kay Yakushiji, Shinji Yuasa, Hitoshi Kubota, Taro Nagahama, Akio Fukushima, Koji Ando
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Publication number: 20120069642Abstract: According to one embodiment, a magnetoresistive element includes an electrode layer, a first magnetic layer, a second magnetic layer and a nonmagnetic layer. The electrode layer includes a metal layer including at least one of Mo, Nb, and W. The first magnetic layer is disposed on the metal layer to be in contact with the metal layer and has a magnetization easy axis in a direction perpendicular to a film plane and is variable in magnetization direction. The second magnetic layer is disposed on the first magnetic layer and has a magnetization easy axis in the direction perpendicular to the film plane and is invariable in magnetization direction. The nonmagnetic layer is provided between the first and second magnetic layers. The magnetization direction of the first magnetic layer is varied by a current that runs through the first magnetic layer, the nonmagnetic layer, and the second magnetic layer.Type: ApplicationFiled: September 19, 2011Publication date: March 22, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Koji Ueda, Tadashi Kai, Toshihiko Nagase, Katsuya Nishiyama, Eiji Kitagawa, Tadaomi Daibou, Makoto Nagamine, Hiroaki Yoda
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Publication number: 20120068139Abstract: A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.Type: ApplicationFiled: March 8, 2011Publication date: March 22, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tadaomi Daibou, Eiji Kitagawa, Yutaka Hashimoto, Masaru Tokou, Toshihiko Nagase, Katsuya Nishiyama, Koji Ueda, Makoto Nagamine, Tadashi Kai, Hiroaki Yoda
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Publication number: 20120068284Abstract: According to one embodiment, a magnetoresistive effect element includes a recording layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and a variable orientation of magnetization, a reference layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and an invariable orientation of magnetization, a nonmagnetic layer between the recording layer and the reference layer, a first underlayer on a side of the recoding layer opposite to a side on which the nonmagnetic layer is provided, and a second underlayer between the recording layer and the first underlayer. The second underlayer is a Pd film including a concentration of 3×1015 atms/cm2.Type: ApplicationFiled: September 15, 2011Publication date: March 22, 2012Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Eiji Kitagawa, Tadaomi Daibou, Tadashi Kai, Toshihiko Nagase, Katsuya Nishiyama, Koji Ueda, Hiroaki Yoda
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Patent number: 8139405Abstract: The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.Type: GrantFiled: May 5, 2011Date of Patent: March 20, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Masatoshi Yoshikawa, Eiji Kitagawa, Tadaomi Daibou, Toshihiko Nagase, Tatsuya Kishi, Hiroaki Yoda
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Patent number: 8107281Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.Type: GrantFiled: September 10, 2010Date of Patent: January 31, 2012Assignees: Kabushiki Kaisha Toshiba, National Institute of Advanced Industrial Science and TechnologyInventors: Tadashi Kai, Katsuya Nishiyama, Toshihiko Nagase, Masatoshi Yoshikawa, Eiji Kitagawa, Tadaomi Daibou, Makoto Nagamine, Masahiko Nakayama, Naoharu Shimomura, Hiroaki Yoda, Kei Yakushiji, Shinji Yuasa, Hitoshi Kubota, Taro Nagahama, Akio Fukushima, Koji Ando
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Patent number: 8098514Abstract: A magnetoresistive element includes a first reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization, a recording layer having a stacked structure formed by alternately stacking magnetic layers and nonmagnetic layers, magnetic anisotropy perpendicular to a film surface, and a variable magnetization, and an intermediate layer provided between the first reference layer and the recording layer, and containing a nonmagnetic material. The magnetic layers include a first magnetic layer being in contact with the intermediate layer and a second magnetic layer being not in contact with the intermediate layer. The first magnetic layer contains an alloy containing cobalt (Co) and iron (Fe), and has a film thickness larger than that of the second magnetic layer.Type: GrantFiled: September 18, 2008Date of Patent: January 17, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Toshihiko Nagase, Katsuya Nishiyama, Tadashi Kai, Masahiko Nakayama, Makoto Nagamine, Minoru Amano, Masatoshi Yoshikawa, Tatsuya Kishi, Hiroaki Yoda
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Publication number: 20120008381Abstract: A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0?Ms<?{square root over ( )}{Jw/(6?At)}. Jw is a write current density, t is a thickness of the free layer, A is a constant.Type: ApplicationFiled: September 15, 2011Publication date: January 12, 2012Inventors: Toshihiko NAGASE, Masatoshi Yoshikawa, Eiji Kitagawa, Masahiko Nakayama, Tadashi Kai, Tatsuya Kishi, Hiroaki Yoda
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Patent number: 8036025Abstract: A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0?Ms<?{square root over ( )}{Jw/(6?At)}. Jw is a write current density, t is a thickness of the free layer, A is a constant.Type: GrantFiled: January 12, 2010Date of Patent: October 11, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Toshihiko Nagase, Masatoshi Yoshkawa, Eiji Kitagawa, Masahiko Nakayama, Tadashi Kai, Tatsuya Kishi, Hiroaki Yoda
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Publication number: 20110222335Abstract: The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.Type: ApplicationFiled: May 20, 2011Publication date: September 15, 2011Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masatoshi YOSHIKAWA, Eiji Kitagawa, Tadaomi Daibou, Toshihiko Nagase, Tatsuya Kishi, Hiroaki Yoda
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Publication number: 20110211389Abstract: The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.Type: ApplicationFiled: May 5, 2011Publication date: September 1, 2011Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masatoshi YOSHIKAWA, Eiji Kitagawa, Tadaomi Daibou, Toshihiko Nagase, Tatsuya Kishi, Hiroaki Yoda