Abstract: A magnetoresistance effect device includes a magnetized free layer formed of a ferromagnetic material, a magnetized fixing layer formed of a ferromagnetic material and having a crystal grain boundary, a nonmagnetic layer provided between the magnetized free layer and the magnetized fixing layer, and an antiferromagnetic layer provided on one surface of the magnetized fixing layer, which is opposed to a surface of the nonmagnetic layer. The magnetized fixing layer has an element which is segregated into the crystal grain boundary to prevent a material of the antiferromagnetic layer from diffusing.

Abstract: The pharmaceutical composition comprising the compound of the invention having 8-azaprostaglandin skeleton represented by formula (I) (wherein, all the symbols have the same meanings as that of the specification.) a salt thereof, a solvate thereof or a cyclodextrin clathrate thereof, or a prodrug thereof and them as active ingredient have EP4 agonistic action and thus are considered useful for the prevention and/or treatment of immunological diseases, asthma, neuronal cell death, arthritis, lung failure, pulmonary fibrosis, pulmonary emphysema, bronchitis, chronic obstructive pulmonary disease, liver damage, acute hepatitis, nephritis, renal insufficiency, hypertension, myocardial ischemia, systemic inflammatory response syndrome, sepsis, hemophagous syndrome, macrophage activation syndrome, Still's disease, Kawasaki disease, burn, systemic granulomatosis, ulcerative colitis, Crohn's disease, hypercytokinemia at dialysis, multiple organ failure, shock and glaucoma, etc.

Abstract: A ferromagnetic film according to the present invention includes ferromagnetic element and nonmagnetic element and has a first portion and a second portion. Concentration of the nonmagnetic element in the first portion is lower than an average concentration of the nonmagnetic element in the ferromagnetic film. On the other hand, concentration of the nonmagnetic element in the second portion is higher than the average concentration of the nonmagnetic element in the ferromagnetic film. The nonmagnetic element includes at least one element selected from the group consisting of Zr, Ti, Nb, Ta, Hf, Mo and W. The ferromagnetic film is applied to a magnetic free layer of a magneto-resistance element in an MRAM.

Abstract: A magnetic memory device includes a magnetization fixed layer provided above a semiconductor substrate surface and having a fixed magnetization direction. A first magnetization free layer is provided above the magnetization fixed layer, has variable magnetization direction, and has an easy magnetization axis extending along a plane intersecting the substrate surface and along a direction neither parallel nor perpendicular to the substrate surface. A second magnetization free layer is provided above the first magnetization free layer, has a magnetization that antiferromagnetically couples with the first magnetization free layer. A first write line is placed above and electrically connected to the second magnetization free layer, and extends in a direction that pierces the plane. A second write line faces the first and/or second magnetization free layer, and extends along the substrate surface and the plane and in a direction perpendicular to the first write line.

Abstract: A magnetoresistive includes a first magnetic reference layer having a fixed magnetization direction, a magnetic free layer having a magnetization direction which is changeable by being supplied with spin polarized electrons, a second magnetic reference layer having a fixed magnetization direction, a first intermediate layer provided between the first magnetic reference layer and the magnetic free layer, and a second intermediate layer provided between the magnetic free layer and the second magnetic reference layer. The magnetic free layer and the first magnetic reference layer have directions of easy magnetization perpendicular or parallel to an in-plane direction. The first magnetic reference layer and the second magnetic reference layer have directions of easy magnetization perpendicular to each other.

Abstract: A magnetoresistance effect device includes a magnetized free layer formed of a ferromagnetic material, a magnetized fixing layer formed of a ferromagnetic material and having a crystal grain boundary, a nonmagnetic layer provided between the magnetized free layer and the magnetized fixing layer, and an antiferromagnetic layer provided on one surface of the magnetized fixing layer, which is opposed to a surface of the nonmagnetic layer. The magnetized fixing layer has an element which is segregated into the crystal grain boundary to prevent a material of the antiferromagnetic layer from diffusing.

Abstract: A tool attachable to a spindle of a machine tool in the same way as an ordinary tool, capable of being driven without connecting with an external power supply etc., giving a higher rotational speed than that of the spindle of the machine tool without supplying electric power from the outside, and able to be changed automatically, provided with a machining tool for machining a workpiece, a motor for driving the machining tool, a generator for generating electric power to drive the motor by the rotation of the spindle, and a breaker for breaking a supply line of electric current from the generator to the motor when electric current over a predetermined value flows in the supply line.

Abstract: The pharmaceutical composition comprising the compound of the invention having 8-azaprostaglandin skeleton represented by formula (I) (wherein, all the symbols have the same meanings as that of the specification) a salt thereof, a solvate thereof or a cyclodextrin clathrate thereof, or a prodrug thereof and them as active ingredient have EP4 agonistic action and thus are considered useful for the prevention and/or treatment of immunological diseases, asthma, neuronal cell death, arthritis, lung failure, pulmonary fibrosis, pulmonary emphysema, bronchitis, chronic obstructive pulmonary disease, liver damage, acute hepatitis, nephritis, renal insufficiency, hypertension, myocardial ischemia, systemic inflammatory response syndrome, sepsis, hemophagous syndrome, macrophage activation syndrome, Still's disease, Kawasaki disease, burn, systemic granulomatosis, ulcerative colitis, Crohn's disease, hypercytokinemia at dialysis, multiple organ failure, shock and glaucoma, etc.

Abstract: The present invention relates to a carboxylic acid compound of formula (I): wherein R1 is H, alkyl; m is 2, 3; n is 0-2; R2 is phenyl, naphthyl, benzofuran, benzothiophene; Q is —CH2—O-Cyc1, —CH2-Cyc2, -L-Cyc3; R3a and R3b each independently is hydrogen, alkyl or taken together form tetrahydro-2H-pyran; a pharmaceutically acceptable salt thereof, a method for producing a process of the preparation thereof and a pharmaceutical agent comprising the same as an active ingredient. The compound of formula (I) have an antagonizing activity against PGE2 receptor, specifically EP3 receptor which is subtype thereof, and are useful for the prevention and/or treatment of itching, pain, urinary disturbance or stress disease.

Abstract: A magnetoresistive element includes a magnetic recording layer which records information as a magnetization direction changes upon supplying a bidirectional current in an out-of-plane direction, a magnetic reference layer which has a fixed magnetization direction, and a nonmagnetic layer which is provided between the magnetic recording layer and the magnetic reference layer. The magnetic recording layer includes an interface magnetic layer which is provided in contact with the nonmagnetic layer and has a first magnetic anisotropy energy, and a magnetic stabilizing layer which has a second magnetic anisotropy energy higher than the first magnetic anisotropy energy.

Abstract: A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0?Ms<?{square root over ( )}{Jw/(6nAt)}. Jw is a write current density, t is a thickness of the free layer, A is a constant.

Abstract: A magnetoresistive effect device includes a first ferromagnetic layer having a fixed magnetization direction and having magnetic moment ml per unit area. A nonmagnetic layer contacts with the first ferromagnetic layer and has an amplitude hi of roughness of an interface between the nonmagnetic layer and the first ferromagnetic layer. A second ferromagnetic layer contacts with the nonmagnetic layer, has a fixed magnetization direction, has magnetic moment m2 per unit area which is smaller than the magnetic moment m1, and has an amplitude h2 of roughness of an interface between the second ferromagnetic layer and the nonmagnetic layer. A barrier layer contacts with the second ferromagnetic layer, and has an amplitude h3, which is smaller than the amplitudes h1 and h2, of roughness of an interface between the barrier layer and the second ferromagnetic layer. A third ferromagnetic layer contacts with the barrier layer and has a variable magnetization direction.

Abstract: An MTJ element has two magnetic layers and a nonmagnetic layer. The resistance of the MTJ element, which varies depending on whether the two magnetic layers are magnetized parallel or antiparallel. In an MRAM adapted to write data into the MTJ element by causing a write wiring to generate induced magnetic flux and consequently changing the direction of magnetization of the recording layer, the MTJ element is a perpendicular MTJ element in which each of the two magnetic layers is magnetized in a direction perpendicular to its plane. The write wiring is placed in a direction perpendicular to the direction of the thickness of the MTJ element and applies a generated magnetic field to the magnetic layers of the MTJ element in the direction in which they are magnetized. Magnetic yokes hold the MTJ element in the direction of its thickness.

Abstract: A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.

Abstract: A magnetic random access memory described in embodiments of the present invention comprises a conductive line, a soft magnetic material which surrounds the conductive line, a gap disposed in a part of the soft magnetic material, and a magneto-resistive element in which a part of a vertical magnetization film as a magnetic free layer is positioned in the gap and in which a vertical magnetization film as a magnetic pinned layer is positioned outside the gap.

Abstract: A phase change recording medium comprising an as-deposited first recording layer configured to undergo a reversible phase change between an amorphous state and a crystalline state due to light irradiation and thereby change an optical characteristic. The as-deposited first recording layer includes a plurality of fine nuclei having an average size of 0.5 nm to 4 nm in the amorphous state.

Abstract: An optical disk from which recorded data are read out by means of light irradiation has a substrate having recording pits as data on a surface thereof, and stacked films formed on the substrate. The stacked films contain a super-resolution film of a polymer matrix and semiconductor particles having an organic group covalently bonded thereto, and a reflective film reflecting light. The super-resolution film and the reflective film are provided in this order from a light incident side.

Abstract: A magnetic random access memory in which a plurality of magnetoresistive elements are laid out in an array, the magnetoresistive element includes a lower ferromagnetic layer, an upper ferromagnetic layer which has a planar shape smaller than a planar shape of the lower ferromagnetic layer, a first nonmagnetic insulating layer which is formed between the lower ferromagnetic layer and the upper ferromagnetic layer, and a first nonmagnetic metal layer which is formed between the first nonmagnetic insulating layer and the upper ferromagnetic layer.

Abstract: A magnetoresistive effect device includes a first ferromagnetic layer having a fixed magnetization direction and having magnetic moment ml per unit area. A nonmagnetic layer contacts with the first ferromagnetic layer and has an amplitude hi of roughness of an interface between the nonmagnetic layer and the first ferromagnetic layer. A second ferromagnetic layer contacts with the nonmagnetic layer, has a fixed magnetization direction, has magnetic moment m2 per unit area which is smaller than the magnetic moment m1, and has an amplitude h2 of roughness of an interface between the second ferromagnetic layer and the nonmagnetic layer. A barrier layer contacts with the second ferromagnetic layer, and has an amplitude h3, which is smaller than the amplitudes h1 and h2, of roughness of an interface between the barrier layer and the second ferromagnetic layer. A third ferromagnetic layer contacts with the barrier layer and has a variable magnetization direction.

Abstract: A magnetoresistance effect device includes a magnetized free layer formed of a ferromagnetic material, a magnetized fixing layer formed of a ferromagnetic material and having a crystal grain boundary, a nonmagnetic layer provided between the magnetized free layer and the magnetized fixing layer, and an antiferromagnetic layer provided on one surface of the magnetized fixing layer, which is opposed to a surface of the nonmagnetic layer. The magnetized fixing layer has an element which is segregated into the crystal grain boundary to prevent a material of the antiferromagnetic layer from diffusing.