Patents by Inventor Toshihiko Takeuchi
Toshihiko Takeuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11967649Abstract: The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.Type: GrantFiled: August 25, 2022Date of Patent: April 23, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshihiko Takeuchi, Naoto Yamade, Yutaka Okazaki, Sachiaki Tezuka, Shunpei Yamazaki
-
Patent number: 11964569Abstract: In a case of a normal operation, a battery controller (22) assumes a normal operation mode and permits charging and discharging of a battery module (21). Upon receiving a discharge command from a vehicle body controller (17) for completely discharging the battery module (21), the battery controller (22) assumes a discharge mode to discharge the battery module (21) to reach a safe voltage level and store discharge information. Upon reading out the discharge information, the battery controller (22) assumes a discharge prohibition mode to prohibit charging and discharging of the battery module (21).Type: GrantFiled: July 4, 2019Date of Patent: April 23, 2024Assignee: Hitachi Construction Machinery Co., Ltd.Inventors: Toshihiko Watanabe, Seiji Ishida, Ken Takeuchi
-
Patent number: 11955538Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.Type: GrantFiled: April 18, 2023Date of Patent: April 9, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toshihiko Takeuchi, Naoto Yamade, Hiroshi Fujiki, Tomoaki Moriwaka, Shunsuke Kimura
-
Publication number: 20240097013Abstract: Provided is a semiconductor device capable of reducing switching loss at turn-off while suppressing conduction loss. An emitter p? layer 11, a collector p layer 23, a drift layer 10, an emitter electrode 18, a collector electrode 28, an emitter-side gate electrode 17, an emitter n layer 12, a collector p? layer 23a, a collector-side gate electrode 27, and a collector n layer 22 configure a semiconductor device 1, and a total length of a first facing region of the emitter-side gate electrode 17 in a gate width direction facing an emitter layer p? 11 via a gate insulating film 15 is longer than the total length in the gate width direction of a second facing region of a collector-side gate electrode 27 facing an impurity layer 23a via a collector-side gate insulating film 25.Type: ApplicationFiled: November 16, 2021Publication date: March 21, 2024Inventors: Toshiro Hiramoto, Takuya Saraya, Kiyoshi Takeuchi, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Katsumi Satoh, Tomoko Matsudai
-
Publication number: 20240088232Abstract: A semiconductor device that can be scaled down or highly integrated is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor.Type: ApplicationFiled: November 22, 2023Publication date: March 14, 2024Inventors: Kosei NEI, Tsutomu MURAKAWA, Toshihiko TAKEUCHI, Kentaro SUGAYA
-
Publication number: 20240066095Abstract: The disclosure relates to therapeutic proteins and pharmaceutical compositions comprising said proteins, which have utility in treating various human diseases. In particular aspects, the disclosed therapeutic proteins are useful for treating human gastrointestinal inflammatory diseases and gastrointestinal conditions associated with decreased epithelial cell barrier function or integrity. Further, the disclosed therapeutic proteins are useful for treating human inflammatory bowel disease, including inter alia, Crohn's disease and ulcerative colitis.Type: ApplicationFiled: April 24, 2023Publication date: February 29, 2024Inventors: Andrew Wonhee Han, Andrew Whitman Goodyear, Tarunmeet Gujral, Todd Zachary DeSantis, Karim Dabbagh, Toshihiko Takeuchi, Ye Jin, Michi Izumi Willcoxon, Stefanie Banas
-
Publication number: 20240055299Abstract: A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided. The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.Type: ApplicationFiled: October 24, 2023Publication date: February 15, 2024Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Toshihiko TAKEUCHI, Tsutomu MURAKAWA, Hiroki KOMAGATA, Daisuke MATSUBAYASHI, Noritaka ISHIHARA, Yusuke NONAKA
-
Patent number: 11898261Abstract: To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.Type: GrantFiled: January 6, 2022Date of Patent: February 13, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Teppei Oguni, Takeshi Osada, Toshihiko Takeuchi
-
Patent number: 11881513Abstract: A semiconductor device that can be scaled down or highly integrated is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor.Type: GrantFiled: April 16, 2019Date of Patent: January 23, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kosei Nei, Tsutomu Murakawa, Toshihiko Takeuchi, Kentaro Sugaya
-
Publication number: 20240006539Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a conductor, a first insulator in contact with a side surface of the conductor, a second insulator in contact with a top surface of the conductor and a top surface of the first insulator, and an oxide over the second insulator. The oxide includes a region that overlaps with the conductor with the second insulator interposed therebetween. The maximum height of a roughness curve (Rz) of the top surface of the conductor is 6.0 nm or smaller. The region includes crystals, and c-axes of the crystals are aligned in the normal direction of the top surface of the conductor.Type: ApplicationFiled: September 15, 2023Publication date: January 4, 2024Inventors: Shunpei YAMAZAKI, Hiromi SAWAI, Ryo TOKUMARU, Toshihiko TAKEUCHI, Tsutomu MURAKAWA, Sho NAGAMATSU, Tomoaki MORIWAKA
-
Publication number: 20230352687Abstract: Graphene is formed with a practically uniform thickness on an uneven object. The object is immersed in a graphene oxide solution, and then taken out of the solution and dried; alternatively, the object and an electrode are immersed therein and voltage is applied between the electrode and the object used as an anode. Graphene oxide is negatively charged, and thus is drawn to and deposited on a surface of the object, with a practically uniform thickness. After that, the object is heated in vacuum or a reducing atmosphere, so that the graphene oxide is reduced to be graphene. In this manner, a graphene layer with a practically uniform thickness can be formed even on a surface of the uneven object.Type: ApplicationFiled: July 10, 2023Publication date: November 2, 2023Inventors: Teppei OGUNI, Takeshi OSADA, Toshihiko TAKEUCHI, Kuniharu NOMOTO
-
Patent number: 11804407Abstract: A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided. The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.Type: GrantFiled: November 4, 2021Date of Patent: October 31, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toshihiko Takeuchi, Tsutomu Murakawa, Hiroki Komagata, Daisuke Matsubayashi, Noritaka Ishihara, Yusuke Nonaka
-
Patent number: 11787876Abstract: The present disclosure relates, in general, human antibodies against human parathyroid hormone receptor 1 (PTH1R) and methods of use of such antibodies in the treatment of cancer, Humoral Hypercalcemia of Malignancy (HHM), or Primary Hyperparathyroidism (PHPT) and Secondary Hyperparathyroidism (SHPT) and cachexia.Type: GrantFiled: November 26, 2019Date of Patent: October 17, 2023Assignee: XOMA (US) LLCInventors: Raphael D. Levy, Hassan Issafras, Agnes Choppin Holmes, Kirk W. Johnson, Amer M. Mirza, Daniel H. Bedinger, Rachel A. Hunt, Toshihiko Takeuchi, Kiranjit Kaur Ahluwalia, Robyn Cotter
-
Patent number: 11784259Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a conductor, a first insulator in contact with a side surface of the conductor, a second insulator in contact with a top surface of the conductor and a top surface of the first insulator, and an oxide over the second insulator. The oxide includes a region that overlaps with the conductor with the second insulator interposed therebetween. The maximum height of a roughness curve (Rz) of the top surface of the conductor is 6.0 nm or smaller. The region includes crystals, and c-axes of the crystals are aligned in the normal direction of the top surface of the conductor.Type: GrantFiled: March 17, 2022Date of Patent: October 10, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Hiromi Sawai, Ryo Tokumaru, Toshihiko Takeuchi, Tsutomu Murakawa, Sho Nagamatsu, Tomoaki Moriwaka
-
Publication number: 20230299183Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.Type: ApplicationFiled: April 18, 2023Publication date: September 21, 2023Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei YAMAZAKI, Toshihiko TAKEUCHI, Naoto YAMADE, Hiroshi FUJIKI, Tomoaki MORIWAKA, Shunsuke KIMURA
-
Publication number: 20230272016Abstract: The disclosure provides peptides and pharmaceutical compositions thereof. Such peptides can be useful, for example, in treating various human diseases such as immunological diseases. In some embodiments, the peptides are useful as immunotherapeutics for modulating regulatory and effector molecules of the mammalian immune system.Type: ApplicationFiled: June 4, 2021Publication date: August 31, 2023Inventors: Bum-Yeol Hwang, Michi Izumi Willcoxon, Helena Kiefel, Toshihiko Takeuchi, Dhwani Haria, Michelle Lin, Roberta L. Hannibal, Joanna Catherine Ceolane Dreux, Jayamary Divya Ravichandar
-
Patent number: 11699790Abstract: Graphene is formed with a practically uniform thickness on an uneven object. The object is immersed in a graphene oxide solution, and then taken out of the solution and dried; alternatively, the object and an electrode are immersed therein and voltage is applied between the electrode and the object used as an anode. Graphene oxide is negatively charged, and thus is drawn to and deposited on a surface of the object, with a practically uniform thickness. After that, the object is heated in vacuum or a reducing atmosphere, so that the graphene oxide is reduced to be graphene. In this manner, a graphene layer with a practically uniform thickness can be formed even on a surface of the uneven object.Type: GrantFiled: March 29, 2022Date of Patent: July 11, 2023Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Teppei Oguni, Takeshi Osada, Toshihiko Takeuchi, Kuniharu Nomoto
-
Patent number: 11674240Abstract: Universal antibody libraries are described which are synthetic and derived from expressed human antibody sequences selected accordingly to certain criteria, for example, that the sequences are derived from naturally-occurring antibodies expressed in response to a certain antigen class (e.g., small molecule, polysaccharide, peptide, or protein) and having CDR regions engineered for optimal diversity. Methods for making and screening such libraries for isolating therapeutics suitable for treating disease are also disclosed.Type: GrantFiled: July 6, 2005Date of Patent: June 13, 2023Assignee: Pfizer Inc.Inventors: Roberto Crea, Arvind Rajpal, Guido Cappuccilli, Randy Shen, Toshihiko Takeuchi
-
Patent number: 11670705Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.Type: GrantFiled: February 16, 2021Date of Patent: June 6, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toshihiko Takeuchi, Naoto Yamade, Hiroshi Fujiki, Tomoaki Moriwaka, Shunsuke Kimura
-
Patent number: 11666627Abstract: The disclosure relates to therapeutic proteins and pharmaceutical compositions comprising said proteins, which have utility in treating various human diseases. In particular aspects, the disclosed therapeutic proteins are useful for treating human gastrointestinal inflammatory diseases and gastrointestinal conditions associated with decreased epithelial cell barrier function or integrity. Further, the disclosed therapeutic proteins are useful for treating human inflammatory bowel disease, including inter alia, Crohn's disease and ulcerative colitis.Type: GrantFiled: January 28, 2019Date of Patent: June 6, 2023Assignee: Second Genome, Inc.Inventors: Andrew Wonhee Han, Andrew Whitman Goodyear, Tarunmeet Gujral, Todd Zachary Desantis, Karim Dabbagh, Toshihiko Takeuchi, Ye Jin, Michi Izumi Willcoxon, Stefanie Banas