Abstract: To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.

Abstract: The present disclosure relates, in general, to materials and methods for antibodies specific for transforming growth factor beta (TGF?), including TGF?1, TGF?2 and TGF?3, and uses of these antibodies in the treatment of subjects having cancer, an eye disease, condition or disorder, fibrosis, including ophthalmic fibrosis or fibrosis of the eye, and other conditions or disorders related to TGF? expression.

Abstract: The present disclosure relates, in general, human antibodies against human parathyroid hormone receptor 1 (PTH1R) and methods of use of such antibodies in the treatment of cancer, Humoral Hypercalcemia of Malignancy (HHM), or Primary Hyperparathyroidism (PHPT) and Secondary Hyperparathyroidism (SHPT) and cachexia.

Abstract: A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. Oxygen is introduced into a surface of an insulating film, and then, an oxide semiconductor, a layer which is capable of blocking oxygen, a gate insulating film, and other films which composes a transistor are formed. For at least one of the first gate insulating film and the insulating film, three signals in Electron Spin Resonance Measurement are each observed in a certain range of g-factor. Reducing the sum of the spin densities of the signals will improve reliability of the semiconductor device.

Abstract: To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.

Abstract: A minute current measurement method is provided. In the current measurement method, a first potential is applied to a first terminal of a transistor under test, a second potential is applied to a first terminal of a first transistor, the first transistor is turned on to accumulate a predetermined charge in a node electrically connecting a second terminal of the transistor under test with a second terminal of the first transistor, a third potential of an output terminal of a read circuit electrically connected to the node is measured, the first transistor is turned off, a fourth potential of the output terminal of the read circuit electrically connected to the node is measured, the amount of the charge held by the node is estimated from the amount of change in the potential of the output terminal of the read circuit (e.g.

Abstract: A manufacturing method of a semiconductor device in which the threshold voltage is adjusted is provided. The semiconductor device includes a first semiconductor, an electrode electrically connected to the first semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the first semiconductor. By performing heat treatment at higher than or equal to 125 ° C. and lower than or equal to 450 ° C. and, at the same time, keeping a potential of the gate electrode higher than a potential of the electrode for 1 second or more, the threshold voltage is increased.

Abstract: A bicycle component fixing structure has a fixing nut that is configured to be coupled to a handlebar clamp and a fixing bolt. The fixing nut includes a threaded bore with an entrance opening and an exit opening. The threaded bore has a first axial length between the entrance and exit openings. The fixing nut defines a bolt shaft receiving space that is disposed adjacent the bolt exit opening. The fixing bolt includes a head and a shaft. The shaft has a non-threaded portion disposed between first and second threaded portions. The first threaded portion is disposed closer to the head of the fixing bolt than the second threaded portion. The first and second threaded portions threadedly engage the threaded bore of the fixing nut. The non-threaded portion has a second axial length that is greater than the first axial length of the threaded bore of the fixing nut.

Abstract: Novel materials and methods useful for expressing heterologous proteins in prokaryotic cells are provided, including prokaryotic cells expressing FkpA and/or Skp.

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. Oxygen is introduced into a surface of an insulating film, and then, an oxide semiconductor, a layer which is capable of blocking oxygen, a gate insulating film, and other films which composes a transistor are formed. For at least one of the first gate insulating film and the insulating film, three signals in Electron Spin Resonance Measurement are each observed in a certain range of g-factor. Reducing the sum of the spin densities of the signals will improve reliability of the semiconductor device.

Abstract: The present disclosure relates, in general, to materials and methods for antibodies specific for transforming growth factor beta (TGF?), including TGF?1, TGF?2 and TGF?3, and uses of these antibodies in the treatment of subjects having cancer, an eye disease, condition or disorder, fibrosis, including ophthalmic fibrosis or fibrosis of the eye, and other conditions or disorders related to TGF? expression.

Abstract: A semiconductor device includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, a source electrode in contact with the second oxide semiconductor film, a drain electrode in contact with the second oxide semiconductor film, a metal oxide film over the second oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the metal oxide film, and a gate electrode over the gate insulating film. The metal oxide film contains M (M represents Ti, Ga, Y, Zr, La, Ce, Nd, or Hf) and Zn. The metal oxide film includes a portion where x/(x+y) is greater than 0.67 and less than or equal to 0.99 when a target has an atomic ratio of M:Zn=x:y.

Abstract: A manufacturing method of a semiconductor device in which the threshold voltage is adjusted is provided. The semiconductor device includes a first semiconductor, an electrode electrically connected to the first semiconductor, a gate electrode, and an electron trap layer between the gate electrode and the first semiconductor. By performing heat treatment at higher than or equal to 125° C. and lower than or equal to 450° C. and, at the same time, keeping a potential of the gate electrode higher than a potential of the electrode for 1 second or more, the threshold voltage is increased.

Abstract: Stable electrical characteristics and high reliability are provided for a miniaturized semiconductor device including an oxide semiconductor, and the semiconductor device is manufactured. The semiconductor device includes a base insulating layer; an oxide stack which is over the base insulating layer and includes an oxide semiconductor layer; a source electrode layer and a drain electrode layer over the oxide stack; a gate insulating layer over the oxide stack, the source electrode layer, and the drain electrode layer; a gate electrode layer over the gate insulating layer; and an interlayer insulating layer over the gate electrode layer. In the semiconductor device, the defect density in the oxide semiconductor layer is reduced.

Abstract: To provide a power storage device having excellent charge/discharge cycle characteristics and a high charge/discharge capacity. The following electrode is used as an electrode of a power storage device: an electrode including a current collector and an active material layer provided over the current collector. The active material layer includes a plurality of whisker-like active material bodies. Each of the plurality of whisker-like active material bodies includes at least a core and an outer shell provided to cover the core. The outer shell is amorphous, and a portion between the current collector and the core of the active material bodies is amorphous. Note that a metal layer may be provided instead of the current collector, the active material bodies do not necessarily have to include the core, and a mixed layer may be provided between the current collector and the active material layer.

Abstract: A bicycle operating device comprises a mounting clamp and an adapter member. The mounting clamp is configured to be mounted to a bicycle tube member and comprises a first radius portion, a second radius portion, and a clamp opening. The first radius portion defines a first inner radius. The second radius portion defines a second inner radius different from the first inner radius. The bicycle tube member is to extend through the clamp opening. The clamp opening is defined by the first radius portion and the second radius portion. The adapter member is configured to be provided between the second radius portion and the bicycle tube member in a state where the mounting clamp is mounted to the bicycle tube member.

Abstract: The present disclosure relates, in general, to methods of treating or preventing hypoglycemia using a negative modulator antibody fragment that binds to the insulin receptor and modulates the action of insulin at the insulin receptor.

Abstract: A bicycle handlebar clamp assembly has a handlebar clamp, a fixing nut, and a fixing bolt. The fixing nut includes a threaded bore having a bolt entrance opening and a bolt exit opening. The fixing nut defines a bolt shaft receiving space disposed adjacent the bolt exit opening. The fixing bolt includes a head and a shaft extending from the head. The shaft has a non-threaded portion disposed between two threaded portions. One of threaded portions is disposed closer to the head of the fixing bolt than the other threaded portion. The threaded portions are dimensioned to threadedly engage the threaded bore of the fixing nut. The non-threaded portion has a axial length that is greater than the axial length of the threaded bore of the fixing nut.

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film. In the antioxidant film, a width of a region overlapping with the pair of electrodes is longer than a width of a region not overlapping with the pair of electrodes.